Claims
- 1. A method for selectively gating the appropriate semiconductor device in a multi-phase rectifier system of type including a plurality of selectively gateable semi-conductive devices coupled between a multi-phase power source and a D.C. load and arranged to couple D.C. voltage across the load comprising the steps of:
- (a) producing a first signal having unique values representative of respective power line phase angles;
- (b) producing a command signal indicative of the ignition phase angle at which gating is desired;
- (c) comparing the first signal and command signal;
- (d) sequencing a multi-state circuit having a plurality of sequentially occuring output states to the sequentially next state when the first command signals are substantially equal; and
- (e) coupling uniquely respective semi-conductive devices to a source of gating pulses in accordance with the output state and the ignition pattern associated with the multiphase source.
- 2. The method of claim 1 including the steps of producing, as the first signal, a cyclical first ramp-like signal in phase-synchronization with the power source.
- 3. The method claim 2 including the step of compounding the magnitude of the command signal with the instantaneous magnitude of the ramp-like signal.
- 4. The method of claim 1 or 3 including the step of using a multi-state circuit which cyclically sequences through a finite number of output states.
- 5. The method of claim 2 or 3 including the additional steps of cyclically producing a second ramp-like signal which is offset in phase from the first ramp-like signal, and
- substituting the second ramp-like signal for the first ramp-like signal in the comparison step during periods of discontinuity in the latter signal.
- 6. The method of claim 5 including the steps of modifying the command signal in accordance with the magnitude of the second ramp-like signal at the ignition angle; and
- comparing the modified command signal with the second ramp-like signal during discontinuities in the first ramp-like signal.
- 7. The method of claim 6 wherein the modified command signal is compared with the second ramp-like signal during a cyclically occurring phase angle range which commences with the ignition of a selected semiconductive device which is not susceptible to gating during the discontinuity and which terminates upon the gating of the last semi-conductive device which is susceptible to gating during the discontinuity.
- 8. The method of claim 5 including the steps of producing as the first ramp-like signal a multibit digital signal, and
- producing the second ramp-like signal by modifying at least a portion of the bits.
- 9. The method of claim 8 including the step of modifying the three most significant bits.
- 10. The method of claim 9 including the step of modifying the three most significant bits according to
- B.sub.8 =Q.sub.8
- B.sub.9 =Q.sub.9 .multidot.(Q.sub.8 .sym.Q.sub.10)
- B.sub.10 =Q.sub.10 .multidot.(Q.sub.8 .sym.Q.sub.9)
- where:
- Q.sub.8, Q.sub.9, Q.sub.10 are respectively the 3rd, 2nd, and first MSB of the first ramp-like signal;
- B.sub.8, B.sub.9, B.sub.10 are respectively the 3rd, 2nd, and first MSB of the second ramp-like signal; and
- Q means "not Q"
- .sym. means "exclusive or".
REFERENCE TO RELATED APPLICATION
This is a division of application Ser. No. 234,064, filed Feb. 12, 1981, now U.S. Pat. No. 4,348,718.
US Referenced Citations (1)
Number |
Name |
Date |
Kind |
3704408 |
Schroeder |
Nov 1972 |
|
Foreign Referenced Citations (1)
Number |
Date |
Country |
2700872 |
Jul 1978 |
DEX |
Divisions (1)
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Number |
Date |
Country |
Parent |
234064 |
Feb 1981 |
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