This application claims the benefit of People's Republic of China application Serial No. 201710063726.3, filed Feb. 3, 2017, the subject matter of which is incorporated herein by reference.
The disclosure relates in general to a touch panel and applications thereof; and more particularly to a touch panel having a multi-layer structure and applications thereof.
A conductive thin film that has optical characteristics of transparency can be applied to serve as a sensor layer of a touch panel. A conventional sensor layer of a touch panel is typically formed by depositing a conductive material layer on a substrate with a deposition process, such as a chemical vapor deposition (CVD) or a physical vapor deposition (PVD); and the conductive material layer is then patterned to form a plurality of sensing electrodes. In order to satisfy the low resistance requirement of the sensing electrodes, currently a sensing electrode with a metal mesh structure has been applied in the touch panel.
According to one embodiment of the present disclosure, a touch panel is disclosed, wherein the touch panel includes a substrate, a conductive layer and a cover layer. The conductive layer is disposed on the substrate. The cover layer is disposed on the conductive layer, and includes a nonmetal element dispersed therein, wherein the cover layer has a thickness of T. The nonmetal element at a first location of the cover layer where spaced from the conductive layer for a distance of 1/12T has a first concentration, and the nonmetal element at a second location of the cover layer where spaced from the conductive layer for a distance of 7/12T has a second concentration, wherein the first concentration is less than the second concentration.
According to another embodiment of the present disclosure, a touch display device is disclosed, wherein the touch display device includes a touch panel and a display unit. The touch display device disposed on one side of the display unit, wherein the touch panel includes a substrate, a conductive layer and a cover layer. The conductive layer is disposed on the substrate. The cover layer is disposed on the conductive layer, and includes a nonmetal element dispersed therein, wherein the cover layer has a thickness of T. The nonmetal element at a first location of the cover layer where spaced from the conductive layer for a distance of 1/12T has a first concentration; and the nonmetal element at a second location of the cover layer where spaced from the conductive layer for a distance of 7/12T has a second concentration; wherein the first concentration is less than the second concentration.
The disclosure can be more fully understood by reading the subsequent detailed description and examples with references made to the accompanying drawings, wherein:
According to the present disclosure, a touch panel and a touch display device applying the same. A number of embodiments of the present disclosure are disclosed below with reference to accompanying drawings.
However, the structure and content disclosed in the embodiments are for exemplary and explanatory purposes only, and the scope of protection of the present disclosure is not limited to the embodiments. Designations common to the accompanying drawings and embodiments are used to indicate identical or similar elements. It should be noted that the present disclosure does not illustrate all possible embodiments, and anyone skilled in the technology field of the invention will be able to make suitable modifications or changes based on the specification disclosed below to meet actual needs without breaching the spirit of the invention. The present disclosure is applicable to other implementations not disclosed in the specification. In addition, the drawings are simplified such that the content of the embodiments can be dearly described, and the shapes, sizes and scales of elements are schematically shown in the drawings for explanatory and exemplary purposes only, not for limiting the scope of protection of the present disclosure.
It should be appreciated that when a description expresses that a first feature is disposed on second feature, it includes the situation that the first feature is directly contacting to the second feature and the situation that there is another feature inserted between the first feature and the second feature, so as to make the first feature not directly in contacting to the second feature.
In some embodiments of the present disclosure, the cover layer includes a nonmetal element, such as metal nitride or metal oxide dispersed therein which can absorb incident light come from the circumstance. The color of the cover layer is not limited and can vary depending upon the composition of the metal nitride or metal oxide dispersed therein.
In the present embodiment, the concentration of the nonmetal element dispersed in the cover layer can be measured by (but not limited to) an energy dispersive X-ray spectrometer (EDX), which can determine the concentration distributions of the nonmetal element along depth direction (the direction parallel to the Z axis) of the cover layer. The concentration of the nonmetal element can be the atomic percentage (at %) or the weight percentage (wt %) of the nonmetal element. In addition, since different portions of the cover layer processing different concentrations of the nonmetal element may have different etching rate against a predetermined etchant, thus the fact that there exists a concentration gradient distribution of the nonmetal element in the cover layer can be confirmed by an etching test using the predetermined etchant.
Next, a conductive layer 102 is disposed on the top surface 101b of the substrate 101 along a direction parallel to the Z axis. In an embodiment of the present disclosure, the conductive layer 102 may be a metal film formed by a deposition process, such as a sputtering process, a CVD process, a PVD process or any other suitable method, on the top surface 101b of the substrate 101. The metal film may include a metal material selected from a group consisting of gold (Au), silver (Ag), titanium (Ti), tungsten (W), indium (In), zinc (Zn), aluminum (Al), neodymium (Nd), copper (Cu) and the arbitrary combinations thereof. The conductive layer 102 has a thickness substantially ranging from 3000 angstrom (A) to 6000 Å, or more particularly from 4000 Å to 5000 Å. However, the thickness of the conductive layer 102 may not be limited to these regards, the thickness of the conductive layer 102 can be varied depending upon the resistance of the metal material for composing the same. For example, the conductive layer 102 can be thinner, when the metal material for composing the same has less resistance. In one embodiment of the present disclosure, the conductive layer 102 can be an aluminum alloy layer with a thickness of 4500 Å.
A cover layer 103 is then disposed on the top surface 102a of the conductive layer 102 along the direction parallel to the Z axis. The cover layer 103 includes a kind of the nonmetal element dispersed therein, and the nonmetal element has different concentrations in different locations of the cover layer 103, wherein the concentration of the nonmetal element at a location spaced more from the conductive layer 102 may be greater than that of the nonmetal element at the location getting closer the conductive layer 102. In one embodiment of the present disclosure, the cover layer 103 can be a metal nitride layer. The cover layer 103 has a thickness T; the nonmetal element at a location of the cover layer 103 where spaced from the conductive layer 102 for a distance of 1/12T has a first concentration; and the nonmetal element at a location of the cover layer 103 where spaced from the conductive layer 102 for a distance of 7/12T has a second concentration, wherein the first concentration is less than the second concentration.
In one embodiment of the present disclosure, the nonmetal element disposed in the cover layer 103 have a concentration gradient, wherein the cover layer 103 can be a metal nitride layer; and the nonmetal element can be a nitrogen element (N). The concentration, such as at % or wt %, of the nitrogen element (N) dispersed in the cover layer 103 may be increased along the direction away from the conductive layer 102. In the embodiment where the cover layer 103 have a concentration gradient, the nonmetal element dispersed in the cover layer 103 has a concentration gradually increased along the direction away from the conductive layer 102.
In one embodiment of the present disclosure, the cover layer can be an aluminum-containing alloy nitride (Al—X—N) layer. The cover layer 103 has a thickness T; the nonmetal element (in the present embodiment may be the nitrogen element (N)) at a location of the cover layer 103 where spaced from the conductive layer 102 for a distance of 1/12T has a first concentration; and the nonmetal element (nitrogen element (N)) at a location of the cover layer 103 where spaced from the conductive layer 102 for a distance of 7/12T has a second concentration, wherein the first concentration is less than the second concentration. For example, the first concentration can be greater than or equal to 2 at % and less than or equal to 30 at %; and the second concentration can be greater than or equal to 30 at % and less than or equal to 80 at %. In one embodiment of the present disclosure, the first concentration can be about 20 at % and the second concentration can be about 40 at %. Of note that the first concentration and the second concentration may not be limited to these regards. The concentration of the nonmetal element can be measured by energy-dispersive X-ray spectroscopy (EDX) or secondary ion mass spectrometry (SIMS). For example, in one embodiment of the present disclosure, the concentration of the nonmetal element can be determined by analyzing the energy spectrum of the electronic bean passing at the predetermined test areas (the locations of the cover layer 103 where spaced from the conductive layer 102 for a distance of 1/12T and 7/12T respectively). In some other embodiments, the concentration of the nonmetal element can be determined by transmission electron microscopy(TEM)-EDX or scanning electron microscopy(SEM)-EDX using a scanning line to scan the predetermined test areas. However, it should be appreciated that the method for determine the concentration of the nonmetal element may not be limited to these regards, and in some embodiments, the nonmetal element may be the oxygen element (O).
In one embodiment of the present disclosure, the nonmetal element (in the present embodiment may be the nitrogen element (N)) dispersed in the region of the cover layer 103 from the top surface 102a of the conductive layer 102 to the locations spaced from the top surface 102a for a distance of ⅙T has a first average concentration; and the nonmetal element (in the present embodiment may be the nitrogen element (N)) dispersed in the region of the cover layer 103 from the ⅙T locations to the locations (that composing the top surface 103c of the cover layer 103) spaced from the top surface 102a for a distance of T has a second average concentration; wherein the first average concentration is less than the second average concentration. In one embodiment of the present disclosure, the first average concentration can be about 20 at %; and the second average concentration can be about 40 at %. In one embodiment of the present disclosure, the concentrations of the nonmetal element at different locations distributed all over the cover layer 103 can be firstly determined by using TEM-EDX or SEM-EDX technology, and the first average concentration and the second average concentration can be thus obtained by calculation (using a mathematic module such as integral, or any other calculating module built in the apparatus for analyzing the TEM-EDX or SEM-EDX). However, it should be appreciated that the first average concentration and the second average concentration as well as the method for determine the same may not be limited to these regards, and in some embodiments, the nonmetal element may be the oxygen element (O).
In one embodiment of the present disclosure, the cover layer 103 may be formed by a sputtering process within a nitrogen-containing atmosphere, in which a high energy plasma is formed by argon or other inert gas to bombard an aluminum alloy target, whereby an Al—X—N layer is then formed on the top surface 102a of the conductive layer 102. The aluminum alloy target can be made of aluminum and at least one metal elements other than aluminum, such as Nd, Cu, Au, Ag, Ti, W, In, Zn and the arbitrary combinations thereof. The thickness T of the cover layer 103 may range from (but not be limited to) 300 Å to 1000 Å (300 Å≤T≤1000 Å). During the process for forming the cover layer 103, the concentration of the nitrogen element (N) dispersed in the cover layer 103 can be manipulated by tuning the nitrogen concentration within nitrogen-containing atmosphere, so as to form at least one low nitrogen-containing portion 103a and at least one high nitrogen-containing portion 103b in the cover layer 103. For example, during the process for forming the cover layer 103, the low nitrogen-containing portion 103a can be firstly formed in the nitrogen-containing atmosphere with less nitrogen gas, and the high nitrogen-containing portion 103b is then formed by increasing the concentration of nitrogen gas in the nitrogen-containing atmosphere. The thicknesses of the low nitrogen-containing portion 103a and high nitrogen-containing portion 103b can be manipulated by controlling the deposition time implemented within different nitrogen-containing atmospheres. For example, the low nitrogen-containing portion 103a can be formed in the nitrogen-containing atmosphere with less nitrogen gas for a first-time interval; and then the high nitrogen-containing portion 103b can be formed in the nitrogen-containing atmosphere with more nitrogen gas for a second-time interval. If the first-time interval is less than the second-time interval, the low nitrogen-containing portion 103a can be thus thinner than the high nitrogen-containing portion 103b. In one embodiment of the present disclosure, the low nitrogen-containing portion 103a can be the region of the cover layer 103 from the top surface 102a of the conductive layer 102 to the locations spaced from the top surface 102a for a distance of 1/T; and the high nitrogen-containing portion 103b can be the region of the cover layer 103 from the ⅙T locations to the top surface 103c of the cover layer 103 (the locations spaced from the top surface 102a for a distance of T). However, it should be appreciated that the aforementioned embodiments are just illustrative, the same results may be obtained by applying different processing parameters. In some embodiments of the present disclosure, the nonmetal element may be the oxygen element (O); and similarly, the concentration of the oxygen element (O) dispersed in the cover layer 103 can be manipulated by tuning the oxygen concentration within oxygen-containing atmosphere.
In some embodiments of the present disclosure, the high nitrogen-containing portion 103b of the cover layer 103 may have a thickness ⅚T greater than a thickness ⅙T of the low nitrogen-containing portion 103a, wherein the thickness of the low nitrogen-containing portion 103a may range from 50 Å to 350 Å; and the thickness of the high nitrogen-containing portion 103b may range from 250 Å to 650 Å. In another embodiment of the present disclosure, the high nitrogen-containing portion 103b of the cover layer 103 may have a thickness less than that of the low nitrogen-containing portion 103a.
Subsequently, an optical matching layer 104 is disposed on the top surface 103c of the cover layer 103, meanwhile the process for forming the touch panel 100 as depicted in
The optical matching layer 104 may be made of one of the materials including indium zinc oxide (IZO), indium tin oxide (ITO), indium gallium zinc oxide (IGZO), niobium oxide (Nb2O5), silicon nitride (SiNx), silicon oxide (SiOx), zinc oxide (ZnO), silicon aluminum oxynitride (SiAlON), aluminum and tin co-doped zinc oxide (ATZO), antimony doped tin oxide (ATO), indium oxide (In2O3), tin oxide (SnO2), fluorine-doped tin oxide (FTO), copper aluminum oxide (CuAlO2), (TiVCrZrTa)xO1-x, (TiVCrZrTa)xNyO1-x-y, aluminum-doped zinc oxide (AZO), cadmium oxide (CdO), gallium-doped zinc oxide (GZO), zinc indium oxide (Zn2In2O5), indium molybdenum oxide (IMO), zinc tin oxide (Zn2SnO4), cadmium tin oxide (Cd2SnO4), cadmium indium oxide (Cd2InO4), In2O3—ZnO, chromium nitride (CrN), chromium oxide (CrO), titanium nitride (TiN), fluorine-doped tin oxice (SnO2:F), copper oxide (Cu2O), ferrous oxide (FeO), copper gallium oxide (CuGaO2), ternary copper oxide (SrCu2O2), titanium oxide (TiO2), nickel oxide (NiO), tantalum oxide (Ta2O5) and the arbitrary combinations thereof. In one embodiment of the present disclosure, the optical matching layer 104 can be an IZO layer having a thickness about 600 Å.
The barrier layers 305 and 405 may be made of one of the materials including organic photo-resist material, SiNx, IGZO, Nb2O5, SiOx, ZnO, SiAlO, TZO, ATO, In2O3, SnO2, FTO, CuAlO2, (TiVCrZrTa)xO1-x, (TiVCrZrTa)xNO1-x-y, AZO, CdO, GZO, Zn2In2O5, IMO, Zn2SnO4, Cd2SnO4, Cd2InO4, In2O3—ZnO, CrN, CrO, TiN, SnO2:F, Cu2O, FeO, CuGaO2, SrCu2O2, TiO2, NiO, Ta2O5 and other transparent material that can resist the corrosion of salt water.
The results in comparison the sheet resistance of touch panels 300 having a not patterned sensing electrode and provided by the aforementioned embodiments with that of a touch panels provided by a comparative embodiment are described in
According to the result of
The touch panel 300 provided by the embodiment of
After serious downstream processes, such as metal layer patterning, wiring, assembling, bounding and the like, are carried out, a touch control module 71 is formed; and the touch control module 71 is then assembled with a display unit 72 to form a touch display device 70 with a touch control function. In one embodiment of the present disclosure, the display unit 72 includes a backlight module 73 and a display panel 74, and the substrate 101 of the display panel 74 can also serve as the substrate for forming the touch control module 71. The display unit 72 includes a self-illuminating display panel 74, such as a quantum dots (QD) panel, a light-emitting diode (LED) display panel or an organic light-emitting diode (OLED) display panel. In the present embodiment of
In detailed, the display panel 74 includes the substrate 101, a color filter 711, a display medium layer 712 (e.g. the liquid crystal layer), a thin-film transistor (TFT) circuit board 713, a bottom polarizer 714 and a top polarizer 715. The backlight module 73 is disposed adjacent to the bottom polarizer 714 of the display panel 74, the touch panel 300 is disposed between the color filter 711 and the top polarizer 715. In another embodiment of the present disclosure, the display panel 74 may further include a quantum dot enhancement film (QDEF), and the color filter 711 can be substituted by a colored photoresist layer or a transparent photoresist layer doped with quantum dots.
In according to the aforementioned embodiments, a touch panel and a touch display device applying the same are disclosed. A cover layer having the nonmetal element disperse therein with various concentrations is formed on a conductive layer used to make the sensing electrodes of the touch panel. The cover layer having the nonmetal element disperse therein with various concentrations may not trigger target poisoning during the continuous sputtering process for forming the same. In addition, the cover layer can prevent the sensing electrode of the touch panel from being damaged by external pollutants, such as salt spray, without deteriorate the display quality of the touch display device. Such that the reliability of the touch display device can be improved.
It should be appreciated that the features respectively described in different embodiments of the present disclosure can be combined with each other, under the premise in the absence of mutual exclusion, to form another embodiment without deviating the scope of the present invention.
While the invention has been described by way of example and in terms of the preferred embodiment (s), it is to be understood that the invention is not limited thereto. On the contrary, it is intended to cover various modifications and similar arrangements and procedures, and the scope of the appended claims therefore should be accorded the broadest interpretation so as to encompass all such modifications and similar arrangements and procedures.
Number | Date | Country | Kind |
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201710063726.3 | Feb 2017 | CN | national |