1. Field of the Invention
The present invention relates to technical field of touch panel and, more particularly, to a touch sensing unit and a liquid crystal display panel with the same.
2. Description of Related Art
The touch sensing device 100 is provided to generate a finger capacitor Cf between finger and the detection electrode 120 by a finger touching a glass surface or approaching the touch sensing device 100. Instead of being a real capacitance, the finger capacitor Cf is a sensitive capacitance existed between the finger and the detection electrode 120.
The pre-charge transistor 110 and the amplifier transistor 130 are turned off so as to generate a pulse with an amplitude Va when proceeding with sensing. Due to the pre-charge transistor 110 and the amplifier transistor 130 both being turned off and the coupling effect of the coupling capacitor 150, a pulse with an amplitude Va is generated on the detection electrode 120. When no finger touches a glass surface or approaches the detection sensing device 100, the voltage on the detection electrode 120 is close to the voltage on the coupling pulse line 170. Simultaneously, the voltage Va on the detection electrode 120 is (Vgh−Vgl)*{(Cc+Cs2)/(Cc+Cs1+Cs2)}+Vpre, in which Vgh is a pulse with a high potential, Vgl is a pulse with a low potential, Vpre is a voltage level of the pre-charge voltage, Cc is a capacitance value of the coupling capacitor 150, Cf is a capacitance value of the finger capacitor, Cs1 is a capacitance value of the pre-charge transistor 110, and Cs2 is a capacitance value of the amplifier transistor 130.
When the finger touches a glass surface or approaches the detection sensing device 100, it generates a finger capacitor Cf between the finger and the detection electrode 120. Due to the presence of finger capacitor Cf, it discharges the voltage on the detection electrode 120. At the same time, the voltage Va′ on the detection electrode 120 is (Vgh−Vgl)*{(Cc+Cs2)/(Cc+Cs1+Cs2+Cf)}+Vpre.
Therefore, the voltage difference dVet between the sensed voltage without finger touching and the sensed voltage with finger touching is:
dVet=Va−Va′=(Vgh−Vgl)*{Cf*(Cc+Cs2)/[(Cc+Cs1+Cs2+Cf)*(Cc+Cs1+Cs2)]}. (1)
An object of the present invention is to provide a touch sensing unit and a liquid crystal display panel with the same for effectively improving sensing accuracy of touch position.
Another object of the present invention is to provide a touch sensing unit and a liquid crystal display panel with the same having a simple hardware architecture. An LCD panel integrated with the touch sensing unit of the present invention is provided with the advantages of better aperture ratio and quality.
In one aspect of the invention, there is provided a touch sensing unit, which comprises a detection electrode, a switch and a boosting and discharging unit. The detection electrode is used for detecting a touch from an external object. The switch is connected to the detection electrode for generating a detection voltage. The boosting and discharging unit is connected to the detection electrode and the switch for discharging the detection electrode or boosting voltage of the detection electrode.
In another aspect of the invention, there is provided a liquid crystal display panel with the touch sensing units, which comprises a plurality of scanning lines, a plurality of touch sensing scanning lines, a plurality of data lines, a plurality of pixels, a plurality of thin-film transistors and a plurality of touch sensing units. The plurality of scanning lines are arranged according to a first direction. The plurality of touch sensing scanning lines are arranged according to the first direction. The plurality of data lines are arranged according to a second direction. Each thin-film transistor of the plurality of thin-film transistors has a gate connected to a corresponding scanning line of the plurality of scanning lines, a source connected to a corresponding data line of the plurality of data lines, and a drain connected to a corresponding pixel of the plurality of pixels. Each touch sensing unit of the plurality of touch sensing units has one terminal connected to a corresponding touch sensing scanning line of the plurality of touch sensing scanning lines, and the other terminal connected to a corresponding data line of the plurality of data lines;
Other objects, advantages, and novel features of the invention will become more apparent from the following detailed description when taken in conjunction with the accompanying drawings.
The detection electrode 410 is provided for detecting a touch from an external object.
The switch 420 is connected to the detection electrode 410 for generating a detection voltage. The switch 420 is a first MOS transistor 420 having a gate connected to the detection electrode 410.
The boosting and discharging unit 430 is connected to the detection electrode 410 and the switch 420 for discharging the detection electrode 410 or boosting voltage of the detection electrode 410.
The sensing control signal source 440 is connected to the switch 420 for providing a discharging reference voltage or a sensing reference voltage, wherein the discharging reference voltage has a voltage level smaller than that of the sensing reference voltage.
As shown in
As shown in
As shown in
At time T2, when the sensing control signal (touch_scan) is the high potential, the sensing control signal (touch_scan) is deemed to be a sensing state. The sensing control signal (touch_scan) switches from the low potential Vgl to the high potential Vgh. The capacitors related to the node n1 include a capacitor Cgd1 between the gate and drain of the second MOS transistor 430, a capacitor Cgd2 between the gate and drain of the first MOS transistor 420, and a finger capacitor Cf generated when the finger touches the glass surface. Therefore, the voltage of the node n1 can be represented as:
(Vgh−Vgl)*[(Cgd1+Cgd2)/(Cgd1+Cgd2+Cf)]+Vgl+Vt(diode).
When there is no finger touching, the finger capacitor is 0 and therefore the voltage of the node n1 at this time can be represented as Vgh+Vt(diode).
Therefore, regardless of the finger touching, the voltage difference of the node n1 can be represented as:
(Vgh−Vgl)*[Cf/(Cgd1+Cgd2+Cf)]. (2)
It is known from equation (2) that, for practical design, the desired voltage difference can be obtained by adjusting the proportion of Cf and Cgd1+Cgd2 in the invention. Furthermore, by measuring the difference of the current which flows through the first MOS transistor 420 before and after the finger touching, it is able to determine whether there is a finger touching or not. In addition, by comparing equation (1) and equation (2), it is known that the voltage difference dVet in prior circuit is:
dVet=ΔV*{Cf*(Cc+Cs2)/[(Cc+Cs1+Cs2+Cf)*(Cc+Cs1+Cs2)]},
where ΔV=(Vgh−Vgl). However, in the invention, the voltage difference dVet is:
dVet=ΔV*[Cf/(Cgd1+Cgd2+Cf)].
In practical application, the finger capacitor Cf is approximately 1 fF, and the capacitors Cgd1 and Cgd2 between the gate and drain of the MOS transistors 420, 430 are larger than the finger capacitor Cf by an order of magnitude, approximately tens of fF. Therefore, it will be understood by comparing equation (1) and equation (2) that the effect of the capacitor Cgd between the gate and drain of the transistor in prior circuit is larger than that of the present invention, and thus the sensitivity of the finger capacitor Cf in prior circuit is worse than that in the present invention.
The same simulation conditions of Vgh=10V, Vgl=−5V, Cgd1=0.02 pF, Cgd2=0.02 pF, and width/length ratio (W/L) of the transistor=20/10 are used for simulation by Spice.
When the sensing control signal (touch_scan) is the low potential, the diode 431 is turned on for discharging the detection electrode 410. When the sensing control signal (touch_scan) is the high potential, the diode 431 is turned off for boosting the voltage of the detection electrode 410 by a coupling effect of capacitor. The capacitor is deemed as depletion or junction capacitance of the diode 431 being turned off.
The boosting and discharging unit 430 further comprises a capacitor 432 having two terminals connected to the anode and the cathode of the diode 431 for increasing capacitance value between the detection electrode 410 and the sensing control signal (touch_scan) when the diode 431 is turned off. The operation of this embodiment is the same as that of
When the sensing control signal (touch_scan) is the low potential and the reset signal B enables the third MOS transistor 433, the third MOS transistor 433 is turned on for discharging the detection electrode 410 via the third MOS transistor 433 and the first MOS transistor 420. When the sensing control signal (touch_scan) is the high potential and the reset signal B disables the third MOS transistor 433, the third MOS transistor 433 is turned off so that the sensing control signal (touch_scan) boosts the voltage of the detection electrode 410 via the capacitor 434. The operation of this embodiment is the same as that of
It will be understood from
The plurality of scanning lines 1510 are arranged according to a first direction (X direction). The plurality of touch sensing scanning lines 1520 are arranged according to the first direction. The plurality of data lines are arranged according to a second direction (Y direction). The first direction is substantially vertical to the second direction.
The plurality of pixels 1540 are connected to the plurality of scanning lines 1510 and the plurality of data lines 1530.
Each of the plurality of touch sensing units 400 has one terminal connected to a corresponding touch sensing scanning line of the plurality of touch sensing scanning lines, and the other terminal is connected to a corresponding data line of the plurality of data lines.
Each of the plurality of touch sensing units 400 comprises a detection electrode 410, a switch 420, a boosting and discharging unit 430 and a sensing control signal source 440.
The detection electrode 410 is provided for detecting a touch from an external object. The switch 420 is a first MOS transistor having a gate connected to the detection electrode 410, a drain connected to the corresponding touch sensing scanning line of the plurality of touch sensing scanning lines, and a source electrode connected to the corresponding data line of the plurality of data lines.
The boosting and discharging unit 430 is connected to the detection electrode 410 and the corresponding touch sensing scanning line of the plurality of touch sensing scanning lines for discharging the detection electrode or boosting the voltage of the detection electrode. The sensing control signal source 440 is connected to the switch 420 for providing a discharging reference voltage or a sensing reference voltage, wherein the discharging reference voltage has a voltage level smaller than that of the sensing reference voltage.
By designing a sensor array based on the circuit of the present invention inside a display panel, it is able to detect the touch position of a finger via the circuit operation of the sensor array.
It can be understood from the above description that the present invention uses capacitances Cgd, Cgs of transistor as coupling capacitors to eliminate the need of designing additional coupling capacitor in the circuit, and further integrates the coupling capacitor 150 and read transistor 140 in prior circuit into the first transistor 420 and integrates the pre-charge transistor 110, pre-charge line 160 and pre-charge line 160 into the boosting and discharging unit 430. The architecture in prior circuit needs three transistors and a coupling capacitor, but the circuit architecture of the present invention only needs two transistors while no coupling capacitor is required. Thus, when the touch sensing units of the present invention are integrated into an LCD panel, the advantages of having better aperture ratio and quality can be provided.
Furthermore, when the capacitance value Cf of the finger capacitor in prior circuit is 10 fF, the voltage difference is only 90 mV. However, in the present invention, when the capacitance value Cf of the finger capacitor is 1 fF, a voltage difference of 900 mV can be achieved, so as to provide a better sensitivity than prior circuit.
Although the present invention has been explained in relation to its preferred embodiment, it is to be understood that many other possible modifications and variations can be made without departing from the spirit and scope of the invention as hereinafter claimed.
Number | Date | Country | Kind |
---|---|---|---|
101129332 | Aug 2012 | TW | national |