The present invention relates to the transducers used in data storage systems. More specifically, the present relates to a transducer for use with a ferroelectric storage medium.
Increased storage capacity in magnetic recording has traditionally been addressed through improvements in the ability to store information on a particular storage disc with an increased areal density, e.g., decreasing the size of the inductive write element and read back sensor in a magnetic recording system. Until recently, these prior art approaches have been adequate for increasing the storage capacity of magnetic recording discs.
Typically in magnetic recording, the magnetic vectors of ferromagnetic domains in a storage medium are arranged in a coherent manner to store data. For example, if the vector direction between adjacent domains is reversed, a binary “1” can be stored.
The areal density in magnetic recording technologies has now reached 60 to 70 Gbit/in2 in certain magnetic storage medium, and is increasing at a rate of between 60% and 100% per year. Further, data rates are increasing at a rate of approximately 30% to 40% per year. However, one limitation of magnetic storage technologies is due to the ferromagnetic domains themselves. As the size of the ferromagnetic domains are reduced in the storage medium in order to achieve higher packing densities, the anisotropy energy of the magnetic domain decreases. Below what is known as the “superparamagnetic” limit, the thermal energy can overcome the magnetic anisotropy such that it is not possible to record data.
Ferroelectric materials also have domains. However, with ferroelectric materials, the domains are formed by charged regions rather than magnetic vectors. Ferroelectric domains can be formed much smaller than magnetic domains and are capable of yielding much higher storage densities than magnetic storage mediums.
Various techniques can be used for reading back data stored on a ferroelectric storage medium. One technique which can be used to readback data uses the piezoelectric properties of the storage medium. However, this technique cannot operate at the high frequency necessary for high data rates, for example above 1 MHz. Another technique uses a scanning nonlinear dielectric microscope (SNDM) in which a lock-in amplifier is used to measure the nonlinear dielectric properties of the storage media. However, this technique also suffers from limited data rates because the lock-in sampling rate must be approximately ten times the data rate.
A transducer for use with a ferroelectric storage medium includes a read electrode configured to carry an electrical charge of a first charge polarity proximate a ferroelectric domain of the ferroelectric medium having a second charge polarity. During readback, if the first and second polarities have the same orientation, the polarity of the medium will not change. However, if the polarities have opposite orientations, the ferroelectric domain will change polarity and an electrical current will flow in the read electrode. If desired, a subsequent write operation can be performed to write back information following a read operation. The write operation can be to the same domain, or to a different domain. In one aspect, a slider is provided which includes the transducer. A disc storage system is also provided which includes such a slider.
Other features and benefits that characterize embodiments of the present invention will be apparent upon reading the following detailed description and review of the associated drawings.
In general, permanent storage devices in present use rely on magnetic hysteresis effects. For example, the magnetic vectors of magnetic material carried on a disc surface can be oriented in different directions to encode data. The data is read back by sensing the orientation of the magnetic field and decoding this measurement to recreate the stored information. There is an ongoing drive to reduction in bit sizes to achieve greater storage density. However, the size of the domains used in the magnetic storage medium are approaching to the minimum achievable size which is limited by thermal stability. In other words, as information density increases, the magnetic orientation becomes unstable. One alternative media that can be used to achieve higher storage density is a ferroelectric storage medium. Such a media may provide storage densities which are greater than 1 Tb/in2.
One problem associated with ferroelectric storage medium is the method used to recover stored information. One solution is to use a transducer 10 having a small read electrode 12 as shown in
During operation, read circuitry 24 polarizes read electrode 12 by placing a charge on electrode 12. When the electric field from the medium 20 proximate read electrode 12 has the same orientation as that of the read electrode 12, there is no change in the orientation of the ferroelectric medium and no current flows. However, when the polarities are opposite, the polarity of the medium 20 will be flipped. This causes a small current to be emitted from the read electrode 12. Read circuitry 24 detects this current and provides a signal to controller 28. The controller 28 actuates write circuitry 26 to polarize write electrode 14 as write electrode moves over the domain of the medium 20 that read electrode “flipped”. This causes the write electrode 14 to re-write the data onto the medium 20 that was destroyed by the read operation. Thus, the data on the surface of medium 20 is recovered by directing the direction of the electric field from medium 20. If the electric field is oriented in the same direction as that from read electrode 12, the polarity is the same as that of read electrode 12 and no current is sensed. If, on the other hand, a current is detected, the electric field of medium from the domain proximate read electrode 12 is in the opposite direction of that from read electrode 12. Data is recovered by monitoring the presence or absence of current.
The current detected by readback circuitry 24 when the orientation of the electric field and ferroelectric medium 20 is flipped is relatively small. For example, if the bit spacing in medium 20 is 10 nm by 10 nm, only about 500 electrons will be emitted which is a charge of 8×10−17 coulombs. Thus, even a small amount of noise can seriously degrade the readback signal. Various techniques can be used to reduce noise in the readback signal. For example,
In
The various electrodes and shields illustrated in
The transducer 10 illustrated in FIGS. 4 and 6-8 can be used in the disc drive 100 shown in
In view of the above advantages of the ferroelectric transducer 10 of the invention, it can be seen that the distance requirements between the transducer 10 and the medium 20 is significantly relaxed in comparison to magnetic transducers. In one aspect, the present invention includes a slider which allows for a certain amount of wear to occur at the head during normal operation.
The length of the trailing edge trim region 200 can be optimized to obtain the desired proximity between transducer 10 and medium 107. For example, the transducer 10 can be located near the step 204 that defines the trim region 200. The trailing edge trim region 200 can comprise a notch in the trailing edge of the slider 110, for example in an alumina encapsulation layer, and is used to minimize the interference between the slider 110 and the storage medium 20. For the ferroelectric transducer 10 of the present invention, it is preferable that the transducer 10 be placed close to the medium 20. Therefore, the trim region 200 is preferably close to the transducer 10 such that only a small amount of wear is needed to place the transducer 10 at the low point of the slider 110 closest to the disc 107. As wear occurs during operation of the storage system 100, the trailing edge trim region ensures that the transducer 10 remains at the lowest point of the slider 110. Further, the trailing edge trim region 200 can also provide a repository for wear debris. Any debris will collect the trim region 200 because it is recessed from the head/disc interface defined by the transducer 10 and is downstream from the transducer 10. The geometry of the trailing edge trim region 200 can be optimized for proximity recording using texturing or other techniques and by controlling how the contact area changes during the wear-in period.
The embodiment shown in
It is to be understood that even though numerous characteristics and advantages of various embodiments of the invention have been set forth in the foregoing description, together with details of the structure and function of various embodiments of the invention, this disclosure is illustrative only, and changes may be made in detail, especially in matters of structure and arrangement of parts within the principles of the present invention to the full extent indicated by the broad general meaning of the terms in which the appended claims are expressed. For example, the particular elements may vary depending on the particular application for the ferroelectric transducer while maintaining substantially the same functionality without departing from the scope and spirit of the present invention. In addition, although the preferred embodiment described herein is directed to a disc storage system, it will be appreciated by those skilled in the art that the teachings of the present invention can be applied to any storage system which utilizes ferroelectric techniques without departing from the scope and spirit of the present invention.
In one embodiment, an electrode depth of 20 nm is used. The depth is easily implemented using current fabrication techniques. Shallower depth can also be used, for example 5 nm. The transducer width can be determined by a lithographic process, for example, lithography 40 nm with an electron beam. The height of the transducer can be several microns, and is limited by lithography. Typical spacing from the medium ranges from 50 nm to 1 um. Thus, in one specific example, the read electrode may have a thickness of 5 and 20 nm and a height of several microns, for example. The write electrode may have a thickness of 20 to 40 nm and a height of several microns. Example spacing between the read and write electrons can be between 50 nm and 1 μm.
Number | Name | Date | Kind |
---|---|---|---|
3703328 | Glass et al. | Nov 1972 | A |
3806902 | Drees et al. | Apr 1974 | A |
3940750 | Voegeli | Feb 1976 | A |
4041477 | Drenckhan | Aug 1977 | A |
4099247 | Mikada et al. | Jul 1978 | A |
4103341 | Brody | Jul 1978 | A |
4153328 | Wang | May 1979 | A |
4187109 | Mageumi et al. | Feb 1980 | A |
4195355 | Rohrer | Mar 1980 | A |
4220395 | Wang et al. | Sep 1980 | A |
4319355 | Mollier | Mar 1982 | A |
4344155 | Mollier | Aug 1982 | A |
4551819 | Michl et al. | Nov 1985 | A |
4649519 | Sun et al. | Mar 1987 | A |
4731754 | Ogden et al. | Mar 1988 | A |
4794560 | Bell et al. | Dec 1988 | A |
4832456 | Yamazaki et al. | May 1989 | A |
4858040 | Hazebrouck | Aug 1989 | A |
4927220 | Hesselink et al. | May 1990 | A |
4954951 | Hyatt | Sep 1990 | A |
4956784 | Hadavi et al. | Sep 1990 | A |
4977540 | Goodwin et al. | Dec 1990 | A |
4988891 | Mashiko | Jan 1991 | A |
5004309 | Caulfield et al. | Apr 1991 | A |
5005927 | Cudney et al. | Apr 1991 | A |
5014235 | Morton | May 1991 | A |
5051950 | Evans, Jr. et al. | Sep 1991 | A |
5132811 | Iwaki et al. | Jul 1992 | A |
5132813 | Caulfield et al. | Jul 1992 | A |
5151822 | Hekker et al. | Sep 1992 | A |
5175775 | Iwaki et al. | Dec 1992 | A |
5179533 | Bullington et al. | Jan 1993 | A |
5216631 | Sliwa, Jr. | Jun 1993 | A |
5233554 | Conley et al. | Aug 1993 | A |
5239504 | Brady et al. | Aug 1993 | A |
5261055 | Moran et al. | Nov 1993 | A |
5291584 | Challa et al. | Mar 1994 | A |
5307311 | Sliwa, Jr. | Apr 1994 | A |
5343426 | Cassidy et al. | Aug 1994 | A |
5359565 | Takatori | Oct 1994 | A |
5359726 | Thomas | Oct 1994 | A |
5361238 | Owechko | Nov 1994 | A |
5372859 | Thakoor | Dec 1994 | A |
5379266 | Russell | Jan 1995 | A |
5388267 | Chan et al. | Feb 1995 | A |
5410680 | Challa et al. | Apr 1995 | A |
5423054 | Schmidt et al. | Jun 1995 | A |
5426075 | Perino et al. | Jun 1995 | A |
5426769 | Pawloski | Jun 1995 | A |
5428417 | Lichtenstein | Jun 1995 | A |
5432950 | Sibigtroth | Jul 1995 | A |
5886922 | Saito et al. | Mar 1999 | A |
6515957 | Newns et al. | Feb 2003 | B1 |
7221639 | Onoe et al. | May 2007 | B2 |
20020093883 | Chang et al. | Jul 2002 | A1 |
20020109947 | Khizroev et al. | Aug 2002 | A1 |
20050044695 | Fong et al. | Mar 2005 | A1 |
Number | Date | Country | |
---|---|---|---|
20050128616 A1 | Jun 2005 | US |