1. Field of the Invention
The present invention pertains to amplifiers and, more particularly, to a transistor amplifying stage having a wide input volume range.
2. Description of the Related Art
Transistor amplifiers are generally known, and an amplifier of this type is shown in
A known amplifier circuit that has a greater input dynamic is shown in
In view of the state of the technique described, the disclosed embodiments of the present invention provide an amplifier that presents a wide input volume range.
In accordance with the present invention, an amplifying stage is provided that includes a first circuit part and a second circuit part, the first circuit part positioned between a first and a second reference voltage, the first circuit part including at least a first transistor having a first non-drivable terminal connected with a current supply and at least a second transistor having a first non-drivable terminal connected with a second non-drivable terminal of the at least first transistor. The current supply is connected to the first reference voltage, the second circuit part is connected through the circuit to the first circuit part and is powered by a current proportional to the current supplied by the current supply. The second circuit part has at least one input terminal and is connected to a load. The first circuit part further includes connection of the first non-drivable terminal of the at least one first transistor with the drivable terminal of the at least a second transistor, the connection being suitable for causing the current passing through the at least a second transistor to be equal to the current supplied by the current supply, and a voltage between the first non-drivable terminal of the at least a first transistor and ground to be greater than a saturation voltage between the non-drivable terminals of the at least first transistor, and further that the same at least one input signal is applied on a drivable terminal of the at least a first transistor and to an input terminal of the second circuit part.
In accordance with another embodiment of the invention, an amplifying stage is provided that includes a first transistor configured to receive an input signal and to convey a supply current to a second transistor in response to the input signal, the second transistor coupled to a reference voltage, a third transistor configured to receive the input signal and coupled between a load and a fourth transistor having a control terminal coupled to a control terminal of the second transistor and the fourth transistor coupled to the reference voltage, and a connection between a first terminal of the first transistor and the control terminal of the second transistor.
In accordance with yet another embodiment of the invention, an amplifying stage is provided that includes a differential pair of transistors formed of first and second transistors configured to receive an input signal and to convey a supply current to a third transistor in response to the input signal, the third transistor coupled to a reference voltage, a second differential pair of transistors formed of fourth and fifth transistors configured to receive the input signal and coupled between a load and a sixth transistor having a control terminal coupled to a control terminal of the third transistor and coupled to a reference voltage, and a connection between a first node coupling a first and second transistor of the first differential pair to the control terminal of the third transistor.
In accordance with still yet another embodiment of the invention, an amplifying stage is provided that has a first transistor configured to receive an input signal and to convey a supply current to a second transistor in response to the input signal, the second transistor coupled to a reference voltage, a first differential pair of transistors comprising a third transistor and a fourth transistor coupled between a load and a fifth transistor, the differential pair configured to receive the input signal, the fifth transistor having a control terminal coupled to a control terminal of the second transistor and coupled to the reference voltage, and a connection between a first terminal of the first transistor and the control terminal of the second transistor.
The characteristics and the advantages of the disclosed embodiments of the present invention will appear evident from the following detailed description of an embodiment thereof, illustrated as non-limiting example in the enclosed drawings, in which:
With reference to
The second circuit part or slave 2 includes at least a third transistor Mt2 having a drivable terminal, in this case a gate terminal, connected with the drivable terminal (that is the gate terminal) of the second transistor Mt1 and at least a fourth transistor Mb1 having a non-drivable terminal, the source terminal, connected with a non-drivable terminal, the drain terminal, of the at least a third transistor Mt2 and another non-drivable terminal, the drain terminal, connected to a load LOAD. Preferably the at least a fourth transistor includes a plurality of transistors Mb1 through Mbn having the source and drain terminals in common. The gate terminals of the transistors Ma1 . . . Man and of the transistors Mb . . . . Mbn are connected to respective input signals Vin1 through Vinn.
The first circuit part 1 has a connection 3 of the drain terminal of the plurality of transistors Ma1 . . . Man with the gate terminal of the transistor Mt1. The connection 3 can consist of a simple electrical connection line or it can also include an amplifier A with high input impedance or with negligible input current. The connection is suitable for making the current It1 that passes through the transistor Mt1 the same as current supplied by the current generator Ibias. In fact the negative feedback, in the case in which the two currents are not equal and therefore the voltage on a node P tends to positive or negative supply, reacts by means of the connection 3 on the gate of the transistor Mt1 to restore the condition of equilibrium.
The connection A is suitable for making sure that the voltage between the drain terminal in common with the transistors Ma1 through Man and ground is greater than a saturation voltage Vds between the drain and the source terminals of the same transistors Ma1 . . . Man of at least a hundred-odd millivolts.
The first circuit part 1 presents three operating regions upon variation of the input voltage Vini in which one of the voltages from Vin1 to Vinn is indicated with Vini.
In the first operating region there is Vgs−ai<Vini<Va, where Vgs−ai is the voltage between the gate and source of the generic transistor Mai with i=1 . . . n and Va=Vgs−ai+Vds−sat-t1 where Vds−sat−t1, is the saturation voltage of the transistor Mt1. In the first region the transistor Mai operates in the saturation region and the transistor Mt1 operates in a triode region.
In the second operating region Va<Vini<Vb, where Vb indicates a voltage that depends on the circuit typology of the amplifier A. In the case in which the amplifier has a unitary gain or the drain terminal of the transistor Mai is directly connected to the gate terminal of the transistor Mt1, then Vb=Vgst1+Vth, where Vgst1 is the voltage between the gate terminals and the source of the transistor Mt1, and Vth is the threshold voltage of the generic MOS transistor. In the second operating region both the transistors Mai and Mt1 operate in saturation region.
In the third operating region Vini>Vb; in these conditions the transistor Mai operates in the triode region while the transistor Mt1 operates in the saturation region.
The second circuit part 2 is made in such a way that it is a scaled copy of the first circuit part 1 by means of a form factor γ that is the ratio between the form factors W/L of the transistor Mbi and of the transistor Mai (that is equal to the ratio between the form factors W/L of the transistor Mt2 and of the transistor Mt1). Therefore It2=γ*lbias where It2 is the drain current of the transistor Mt2. Therefore, the first circuit part 1 is made in such a way that it sets the input current to the second circuit part 2 and the latter represents the amplifying device of the whole circuit of
The operation of the amplifier A is to raise the static precision. In fact the loop gain T of the first circuit part 1 is T=gt1×r×G where gt1 is the transconductance of the transistor Mt1, r is the overall dynamic resistance seen at the node P and G is the linear gain of the amplifier A.
An alternative to the use of only MOS transistors is that bipolar transistors can be used for the transistors Ma1 . . . Man and Mb1 . . . Mbn; and the transistors Mt1 and Mt2 remain MOS transistors.
The amplifying stage of
In
Number | Date | Country | Kind |
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04425383.9 | May 2004 | EP | regional |