Claims
- 1. A transistor comprising
- a first electrode;
- a second electrode spaced apart from said first electrode;
- a body of semiconductor material between and in contact with said first electrode and said second electrode;
- an insulating substrate having thereon said first electrode, said second electrode and said body;
- a layer of liquid crystal material in contact with and on the semiconductor body; and
- a third electrode in contact with the layer of liquid crystal.
- 2. The transistor of claim 1 wherein said layer is between about 3 microns and about 30 microns in thickness.
- 3. The transistor of claim 1 further comprising
- a fourth electrode;
- said fourth electrode being between and in the same plane as said first electrode and said second electrode, in contact with said body and on said insulating substrate.
- 4. The transistor of claim 3 wherein said layer is between about 3 microns and about 30 microns in thickness.
- 5. An optologic device comprising
- a first electrode;
- a second electrode spaced apart from said first electrode;
- a body of semiconductor material between and in contact with said first electrode and said second electrode;
- an insulating substrate having thereon said first electrode, said second electrode and said body;
- a layer of liquid crystal material in contact with and on the semiconductor body; and
- a third electrode in contact with said layer, at least a portion of said third electrode overlapping said first electrode.
- 6. An optologic device in accordance with claim 5 further comprising
- a fourth electrode being between and in the same plane as said first electrode and said second electrode, in contact with said body and on said insulating substrate.
- 7. A transistor comprising
- a first electrode;
- a second electrode spaced apart from said first electrode;
- a body of semiconductor material between and in contact with said first electrode and said second electrode;
- an insulating substrate having thereon said first electrode, said second electrode and said body;
- a layer of liquid crystal material which is between about 3 microns and about 30 microns in thickness in contact with and on the semiconductor body which is between about 0.5 micron and about 10 microns in thickness; and
- a third electrode in contact with the layer of liquid crystal.
- 8. The transistor of claim 7 wherein said body is a material selected from the class consisting of ZnO, SnO.sub.2, ZnS and In.sub.2 O.sub.3.
- 9. The transistor of claim 7 further comprising
- a fourth electrode;
- said fourth electrode being between and in the same plane as said first electrode and said second electrode, in contact with said body and on said insulating substrate.
- 10. The transistor of claim 9 wherein said body is a material selected from the class consisting of ZnO, SnO.sub.2, ZnS and In.sub.2 O.sub.3.
- 11. An optologic device comprising
- a first electrode;
- a second electrode spaced apart from said first electrode;
- a body of semiconductor material between between and in contact with said first electrode and said second electrode;
- an insulating substrate having thereon said first electrode, said second electrode and said body;
- a layer of liquid crystal material in contact with and on the semiconductor body;
- a third electrode in contact with said layer, at least a portion of said third electrode overlapping said first electrode; and
- a fourth electrode in contact with said layer, spaced apart from said third electrode and at least a portion of said fourth electrode overlapping said body.
REFERENCE TO RELATED APPLICATIONS
This application is a continuation-in-part of copending application Ser. No. 733,446, filed Oct. 18, 1976, now abandoned.
US Referenced Citations (11)
Non-Patent Literature Citations (1)
Entry |
Maltese et al "Studio sperimentale del comportamento di strati di semiconduttore in contatto con strati di cristallo liquido" Alta _Frequenza vol. 44 (12/75) pp. 727-730. |
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
733446 |
Oct 1976 |
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