Patent Application
20250233299
The present application relates to the technical field of displays, and more particularly, to a transparent antenna and a method for fabricating the same, an electronic device and a method for driving the same.
With the continuous development of mobile communication technology, as an indispensable component in mobile communication device, antennas are more widely used. In addition to the requirements for higher electrical performance of antennas, the requirements for transparency and aesthetics of antennas are also increasing. However, current antennas often have problems that transmittance is inversely proportional to radiation efficiency, and the aesthetics is low, etc.
Therefore, it is urgent to design a new antenna to solve the above problems.
Embodiments of the present application adopt the following technical solutions.
On the one hand, the embodiments of the present disclosure provide a method for fabricating a transparent antenna, and the method includes:
Alternatively, the forming the defining layer on the first substrate includes:
Alternatively, after the processing the dielectric layer to have the third groove and before the forming the electrode layer in the second groove of the mask layer and in the third groove of the dielectric layer, the method further includes:
Alternatively, the processing the defining layer to have the first groove includes:
Alternatively, a material of the dielectric layer includes a flexible material.
Alternatively, after the forming the electrode layer in the fourth groove of the filling layer, the method further includes:
Alternatively, a material of the mask layer includes a non-metallic material.
Alternatively, after the forming the mask layer on the dielectric layer and before the processing the dielectric layer to have the third groove, the method further includes:
Alternatively, a material of the mask layer includes a metal material.
Alternatively, after the forming the mask layer on the dielectric layer and before the processing the dielectric layer to have the third groove, the method further includes:
Alternatively, after the forming the mask layer on the dielectric layer and before the processing the dielectric layer to have the third groove, the method further includes:
Alternatively, the filling layer includes a first sub-filling layer, a second sub-filling layer and a third sub-filling layer, the first sub-filling layer is connected to the third sub-filling layer through the second sub-filling layer, the second sub-filling layer is provided close to the first substrate, the first sub-filling layer and the third sub-filling layer are provided away from the first substrate, the first sub-filling layer and the third sub-filling layer cover the surface of the mask layer, the first sub-filling layer and the third sub-filling layer are symmetrical about a central axis of the second sub-filling layer and have a groove, and the central axis is perpendicular to the first substrate; and
Alternatively, the first sub-filling layer includes a first filling portion and a second filling portion, the third sub-filling layer includes a third filling portion and a fourth filling portion, the first filling portion is connected to the second sub-filling layer through the second filling portion, the third filling portion is connected to the second sub-filling layer through the fourth filling portion, the first filling portion and the third filling portion are symmetrical about the center axis of the second sub-filling layer and have a groove, and the second filling portion and the fourth filling portion are symmetrical about the center axis of the second sub-filling layer and have a groove; and
Alternatively, a cross-sectional shape of the first filling portion close to the third filling portion along the direction perpendicular to the first substrate includes an arc; and
Alternatively, after the forming the filling layer on the surface of the mask layer on the side away from the first substrate, in the second groove of the mask layer and in the third groove of the dielectric layer, and before the forming the electrode layer in the fourth groove of the filling layer, the method further includes:
Alternatively, the forming the leveling layer at least in the fourth groove of the filling layer includes:
Alternatively, after the processing the leveling layer to be located between the first filling portion and the first substrate, and between the third filling portion and the first substrate, and have the fifth groove, and before the forming the electrode layer in the groove between the first filling portion and the third filling portion and in the fifth groove, the method further includes:
Alternatively, after the processing the leveling layer to be located between the first filling portion and the first substrate, and between the third filling portion and the first substrate, and have the fifth groove, and before the forming the electrode layer in the groove between the first filling portion and the third filling portion and in the fifth groove, the method further includes:
Alternatively, after the processing the leveling layer to be located between the first filling portion and the first substrate, and between the third filling portion and the first substrate, and have the fifth groove, and before the forming the electrode layer in the groove between the first filling portion and the third filling portion and in the fifth groove, the method further includes:
Alternatively, the forming the leveling layer at least in the fourth groove of the filling layer includes:
Alternatively, after the processing the leveling layer to fully fill the groove between the second filling portion and the fourth filling portion, and before the forming the electrode layer in the groove between the first filling portion and the third filling portion, the method further includes:
In another aspect, the embodiments of the present disclosure provides a transparent antenna fabricated by the above method, the transparent antenna includes:
Alternatively, the defining layer includes a mask layer and a dielectric layer, and the dielectric layer is located between the mask layer and the first substrate; and
Alternatively, the defining layer further includes a filling layer, the filling layer is located on a surface of the mask layer on a side away from the first substrate, in the second groove of the mask layer and in the third groove of the dielectric layer, the filling layer has a fourth groove, and the electrode layer is located in the fourth groove.
In a further aspect, the embodiments of the present disclosure provide an electronic device including the above transparent antenna.
Alternatively, the electronic device includes a display device including a display panel, the display panel includes a display substrate and the above transparent antenna, and the transparent antenna is provided on a light-emitting side of the display substrate.
Alternatively, the display panel further includes a touch control layer, a first polarization unit and a cover plate;
Alternatively, the display device further includes a first controller and a second controller, and the first controller is electrically connected to and configured to control the display substrate; and
In a further aspect, the embodiments of the present disclosure provide a method for driving the above electronic device, and the method includes:
The above description is only an overview of the technical solution of the present application. In order to have a clearer understanding of the technical means of the present application, it can be implemented according to the content of the specification. In order to make the above and other purposes, features, and advantages of the present application more obvious and easier to understand, the specific implementations of the present application are listed below.
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the figures that are required to describe the embodiments of the present application will be briefly described below. Apparently, the figures that are described below are merely a part of the embodiments of the present application, and a person skilled in the art can obtain other figures according to these figures without paying creative work.
The technical solutions according to the embodiments of the present application will be clearly and completely described below with reference to the drawings according to the embodiments of the present application. Apparently, the described embodiments are merely part of the embodiments of the present application, rather than all of the embodiments. All of the other embodiments that a person skilled in the art obtains on the basis of the embodiments of the present application without paying creative work fall within the protection scope of the present application.
In the drawings, in order for clarity, the thicknesses of the areas and the layers might be exaggerated. In the drawings, the same reference numbers represent the same or similar components, and therefore the detailed description on them are omitted. Moreover, the drawings are merely schematic illustrations of the present disclosure, and are not necessarily drawn to scale.
In the embodiments of the present application, unless stated otherwise, the meaning of “plurality of” is “two or more”. The terms that indicate orientation or position relations, such as “upper”, are based on the orientation or position relations shown in the drawings, and are merely for conveniently describing the present application and simplifying the description, rather than indicating or implying that the component or element must have the specific orientation and be constructed and operated according to the specific orientation. Therefore, they should not be construed as a limitation on the present application.
Unless stated otherwise in the context, throughout the description and the claims, the term “comprise” is interpreted as the meaning of opened containing, i.e., “including but not limited to”. In the description of the present disclosure, the terms “one embodiment”, “some embodiments”, “exemplary embodiments”, “example”, “specific example” or “some examples” are intended to indicate that specific features, structures, materials or characteristics related to the embodiment or example are comprised in at least one embodiment or example of the present application. The illustrative indication of the above terms does not necessarily refer to the same one embodiment or example. Moreover, the specific features, structures, materials or characteristics may be comprised in any one or more embodiments or examples in any suitable manner.
In the embodiments of the present application, terms such as “first”, “second’, “third” and “fourth” are used to distinguish identical items or similar items that have substantially the same functions and effects, merely in order to clearly describe the technical solutions of the embodiments of the present application, and should not be construed as indicating or implying the degrees of importance or implicitly indicating the quantity of the specified technical features.
Embodiments of the present application provide a method for fabricating a transparent antenna, as shown in
In S1, a first substrate 1 is provided.
The first substrate includes a variety of types, which can be selected and set according to actual needs. Exemplarily, the first substrate may be a rigid substrate, and a material of the rigid substrate may include glass, etc. Alternatively, the first substrate may be a flexible substrate, and a material of the flexible substrate may include PI (Polyimide), etc.
The structure of the first substrate is not specifically limited. Exemplarily, other film layers may be formed directly on the first substrate. Alternatively, the first substrate may include a substrate on which other film layers may be formed directly, depending on the actual application.
In S2, a defining layer is formed on the first substrate 1.
The structure of the defining layer is not specifically limited. Exemplarily, the defining layer may include two layers. For example, the defining layer shown in panel g of
The fabricating process and material of the defining layer are not specifically limited, which may be determined based on the structure of the defining layer.
In S3, the defining layer is processed to have a first groove k1.
As shown in
The process for processing the defining layer is not specifically limited, which may be determined based on the structure of the defining layer. Exemplarily, as shown in panel d of
The number, shape, depth, etc. of the first groove of the defining layer are not specifically limited. Exemplarily, the first groove of the defining layer may be one as shown in
The first distance R1 and the second distance R2 are not specifically limited, as long as the first distance R1 is greater than the second distance R2. Exemplarily, as shown in
Exemplarily, as shown in
It should be noted that, as shown in
As shown in
The groove shown in
In S4, an electrode layer 10 is formed in the first groove k1 of the defining layer.
The electrode layer includes a radiation pattern and a feed line, both of which include a grid linear structure.
The material of the electrode layer is not specifically limited. Exemplarily, the material of the electrode layer may be metal material, such as copper, titanium, magnesium, etc. Alternatively, it may also be glass fiber with a metal coating. Alternatively, it may also be resin coated with conductive carbon material. The conductive carbon material includes graphene, a carbon fiber, and a carbon nanotube. When the material of the electrode layer is metal, the electrode layer is also metal wire.
The process for forming the electrode layer is not specifically limited. Exemplarily, the electrode layer may be formed by a process such as electroplating, deposition, etc. The advantage of the electroplating process is illustrated with the material of the electrode layer as metal. Since the deposition efficiency of sputter is low, in order to achieve thick metal with thin line width and high depth-to-width ratio, it is necessary to electroplate metal for rapid growth. Since the defining layer, etc., has already defined the electroplated area, i.e., the previously patterned area, the electroplating metal may only grow in the through hole, rather than on the surface of the defining layer, etc.
The number of feed lines is not specifically limited, which may be determined based on the type and specific situation of the transparent antenna. Exemplarily, in the case where the type of the transparent antenna is a dual-polarized antenna, the number of feed lines is two. Alternatively, in the case where the type of the transparent antenna is a non-dual-polarized antenna, the number of feed lines may be one. Of course, the number of feed lines may also be three or more, depending on the actual application.
Both the radiation pattern and the feed line both include a grid linear structure, which may be a metal grid structure. The line widths of the metal grid lines of the radiation pattern and the feeder line are not specifically limited. Exemplarily, the line widths of the grid lines of the radiation pattern and the feeder line may be 0.5-2 μm, specifically, 0.5 μm, 0.8 μm, 1 μm, 1.5 μm, 1.7 μm, or 2 μm, etc.
The thickness of the grid linear structure is not specifically limited, which may be controlled by a thickness of the defining layer. The thickness range of the grid linear structure is explained with the material of the electrode layer as metal. Considering unevenness of the electroplating metal, the thickness of the electroplating metal, for example, may be 80-90% of the thickness of the defining layer. This is because thin metal will affect the radiation efficiency, while thick metal will seriously affect the transmittance. Exemplarily, a ratio of the thickness of the grid linear structure along the direction perpendicular to the first substrate to the line width of the grid linear structure may be greater than or equal to 2. For example, a depth-to-width ratio of the grid linear structure may be 2, 3, 4, 5, 6, or 7, etc.
The spacing between adjacent grid lines in the grid linear structure is not specifically limited. Exemplarily, the spacing between adjacent grid lines in the grid linear structure may be 20-250 μm, preferably 50-200 μm, specifically 50 μm, 100 μm, or 200 μm, etc.
The transmittance of the grid linear structure is not specifically limited. Exemplarily, the transmittance of the grid linear structure may be greater than 80%, for example, the transmittance range is 86-92%, specifically 86%, 87%, 88%, 89%, 90%, 91%, or 92%, etc.
The line width of grid lines of the radiation pattern may be set to be less than a spacing between adjacent grid lines of the radiation pattern, and the thickness of the radiation pattern along the direction perpendicular to the first substrate may be set to be greater than the line width of grid lines of the radiation pattern. The line width of grid lines of the feed line may be set to be less than the spacing between adjacent grid lines of the radiation pattern, and the thickness of the feed line along the direction perpendicular to the first substrate may be set to be greater than the line width of grid lines of the radiation pattern.
On the one hand, the electrode layer with better light transmittance may be obtained by setting the radiation pattern and the feed line as grid linear structures and combining with the light-transmissive first substrate; on the other hand, the electrode layer with a high depth-to-width ratio may be obtained by adjusting the line widths and thicknesses of the grid linear structures, so as to ensure the radiation of the antenna and further improve the light transmittance of the electrode layer without affecting the electrical performance of each radiation pattern, thereby improving the light transmission performance of the transparent antenna and making it more suitable for use in the display region of the electronic device.
It should be noted that the line width of grid lines of the radiation pattern and the feed line, the spacing between adjacent grid lines, and their respective thicknesses along the direction perpendicular to the first substrate may be the same or different.
The method for fabricating the transparent antenna provided in the embodiments of the present application includes: providing a first substrate; forming a defining layer on the first substrate; processing the defining layer to have a first groove; where an opening width in a first direction of the first groove at a first distance between the first groove and the first substrate along a direction perpendicular to the first substrate is less than an opening width in the first direction of the first groove at a second distance between the first groove and the first substrate, the first distance is greater than the second distance, and the first direction is parallel to the first substrate; forming an electrode layer in the first groove of the defining layer; where the electrode layer includes a radiation pattern and a feed line which include a grid linear structure.
Thus, on the one hand, since the electrode layer is provided in the first groove of the defining layer, the electrode layer with a high depth-to-width ratio, that is, a metal wire with a high depth-to-width ratio, may be obtained by controlling the thickness of the electrode layer in the direction perpendicular to the first substrate by the thickness of the first groove of the defining layer along the direction perpendicular to the first substrate, and controlling the width of the electrode layer along the direction parallel to the first substrate by the width of the first groove of the defining layer along the direction parallel to the first substrate. Since the first groove of the defining layer is along the direction perpendicular to the first substrate, the opening width in the first direction of the first groove at the first distance between the first groove and the first substrate is less than the opening width in the first direction of the first groove at the second distance between the first groove and the first substrate, and the first distance is greater than the second distance, so that the electrode layer may be further narrowed along a direction away from the first substrate, and the electrode layer which is thinner along the first direction may be obtained, i.e., the radiation pattern and the feed line in the transparent antenna have a higher depth-to-width ratio, the transparent antenna may radiate efficiently, and when the transparent antenna with extremely thin line width of metal wire is applied to the electronic device, such as integrated in the display device, the influence on the display function of the display device may be greatly reduced or even eliminated. On the other hand, the light transmittance of the electrode layer may be effectively improved by setting the radiation pattern and the feed line as grid linear structures, so that the transparent antenna as a whole has a transparent effect with excellent light transmittance, and the range of light transmittance may reach 86-92%, which is more conductive to application in the display device.
Optionally, as shown in
In S21, a dielectric layer 2 is formed on the first substrate 1.
The material of the dielectric layer is not specifically limited. Exemplarily, the material of the dielectric layer may include organic adhesive material, flexible material, etc.
The process for fabricating the dielectric layer is not specifically limited. Exemplarily, the organic adhesive material may be coated on the first substrate by a coating process and cured to form the dielectric layer, so that the thickness of the dielectric layer along the direction perpendicular to the first substrate is large and it is easy to fabricate.
In S22, a mask layer 3 is formed on the dielectric layer 2.
The material of the mask layer is not specifically limited. Exemplarily, the material of the mask layer may include metal, such as ITO (Indium Tin Oxides), molybdenum (Mo), molybdenum/aluminum/molybdenum (Mo/Al/Mo), titanium/aluminum/titanium (Ti/Al/Ti), etc. Alternatively, the material of the mask layer may include non-metal, such as silicon nitride (SiN), silicon oxide (SiO), silicon oxynitride (SiON), etc.
The process for fabricating the mask layer is not specifically limited. Exemplarily, PECVD (Plasma Enhanced Chemical Vapor Deposition), TFE (Thin Film Encapsulation), CVD (Chemical Vapor Deposition), etc., may be used to fabricate the mask layer.
The thickness of the mask layer is not specifically limited. Exemplarily, the thickness range of the mask layer along the direction perpendicular to the first substrate may include 90-110 nm. Specifically, the thickness of the mask layer along the direction perpendicular to the first substrate may be 90 nm, 100 nm, or 110 nm, etc.
S3: processing the defining layer to have the first groove k1 includes S31-S32.
In S31, the mask layer 3 is processed to have a second groove k2.
The process for fabricating the second groove is not specifically limited. Exemplarily, a photoresist may be coated on the mask layer by a coating process, and the photoresist may be etched by an etching process to form the second groove.
In S32, the dielectric layer 2 is processed to have a third groove k3.
The process for fabricating the third groove is not specifically limited. Exemplarily, the dielectric layer may be etched by an ICP (Inductively Coupled Plasma Etching) process, and the third groove may be obtained by controlling gas flow rate, etching time, etc. The width of the third groove along the OA direction is greater than that of the second groove along the OA direction. The gas flow rate, etching time, etc., may be determined based on the device.
An opening width D1 of at least part of the second groove k2 in the first direction (the OA direction shown in the figure) is less than an opening width D2 of the third groove k3 in the first direction (the OA direction shown in the figure).
The opening width of at least part of the second groove in the OA direction is less than the opening width of the third groove in the OA direction, which means that the opening width of part of the second groove in the OA direction is less than the opening width of the third groove in the OA direction; or the opening width of all of the second groove in the OA direction is less than the opening width of the third groove in the OA direction. As shown in
In S4, forming the electrode layer 10 in the first groove k1 of the defining layer includes:
S41: forming the electrode layer 10 in the second groove k2 of the mask layer 3 and in the third groove k3 of the dielectric layer 2.
The process for forming the electrode layer in the second groove of the mask layer and in the third groove of the dielectric layer is not specifically limited. Exemplarily, an electroplating process may be used to form the electrode layer in the second groove of the mask layer and in the third groove of the dielectric layer.
In the method for fabricating the transparent antenna provided in the embodiments of the present application, the electrode layer with a high depth-to-width ratio, i.e., a metal wire with a high depth-to-width ratio may be obtained by providing the electrode layer in the second groove of the mask layer and the third groove of the dielectric layer, controlling the thickness of the electrode layer along the direction perpendicular to the first substrate by the thicknesses of the second groove of the mask layer and the third groove of the dielectric layer in the direction perpendicular to the first substrate, and controlling the width of the electrode layer along the direction parallel to the first substrate by controlling the thicknesses of the second groove of the mask layer and the third groove of the dielectric layer along the direction parallel to the first substrate direction. Since the opening width of at least part of the second groove in the first direction is less than the opening width of the third groove in the first direction, the electrode layer may be further narrowed along the direction away from the first substrate by the second groove of the mask layer, the electrode layer electrode layer which is thinner in the first direction may be obtained, i.e., the radiation pattern and the feed line in the transparent antenna have a higher depth-to-width ratio, the transparent antenna may radiate efficiently; and when the transparent antenna with extremely thin line width of metal wire is applied to the electronic device, such as integrated in the display device, the influence on the display function of the display device may be greatly reduced or even eliminated; on the other hand, the light transmittance of the electrode layer may be effectively improved by setting the radiation pattern and the feed line as grid linear structures, so that the transparent antenna as a whole has a transparent effect with excellent light transmittance, and the range of light transmittance may reach 86-92%, which is more conducive to application in the display device.
Optionally, as shown in
S5: forming a filling layer 5 at least in the second groove of the mask layer 3 and in the third groove of the dielectric layer 2.
The filling layer 5 has a fourth groove k4.
Forming the filling layer at least in the second groove of the mask layer and the third groove of the dielectric layer refers to forming the filling layer only in the second groove of the mask layer and in the third groove of the dielectric layer; or, in addition to forming the filling layer in the second groove of the mask layer and the third groove of the dielectric layer, forming the filling layer on other structures, for example, forming the filling layer 5 on the surface of the mask layer 3 on the side away from the first substrate 1, in the second groove and in the third groove, as shown in
The material of the filling layer is not specifically limited. Exemplarily, the material of the filling layer may include silicon oxynitride (SiON), etc. It should be noted that the material of the filling layer may be the same as the material of the mask layer, so that interfacial effects may be avoided. Of course, the material of the filling layer may also be different from the material of the mask layer, which is not specifically limited.
The process for fabricating the filling layer is not specifically limited. Exemplarily, the filling layer may be formed by the deposition process.
S41: forming the electrode layer in the second groove of the mask layer and in the third groove of the dielectric layer includes:
S411: forming an electrode layer 10 in the fourth groove k4 of the filling layer 5.
In the method for fabricating the transparent antenna provided in the embodiments of the present application, the electrode layer with a higher depth-to-width ratio, i.e., a metal wire with a high depth-to-width ratio may be obtained by providing the electrode layer in the fourth groove of the filling layer, controlling the thickness of the electrode layer along the direction perpendicular to the first substrate by the thickness of the fourth groove of the filling layer along the direction perpendicular to the first substrate, and controlling the width of the electrode layer along the direction parallel to the first substrate by the width of the fourth groove of the filling layer along the direction parallel to the first substrate. Since the opening width of the fourth groove of the filling layer in the first direction is less than the opening width of the second groove in the first direction and the opening width of the third groove in the first direction, respectively, the electrode layer may further narrowed along the direction away from the first substrate by the fourth groove of the filling layer, and the electrode layer which is very thin in the first direction may be obtained, i.e., the radiation pattern and the feed line in the transparent antenna have a higher depth-to-width ratio, the transparent antenna may radiate efficiently, and when the transparent antenna with extremely thin line width of metal wire is applied to the electronic device, such as integrated in the display device, the influence on the display function of the display device may be greatly reduced or even eliminated. On the other hand, the light transmittance of the electrode layer may be effectively improved by setting the radiation pattern and the feed line as grid linear structures, so that the transparent antenna as a whole has a transparent effect with excellent light transmittance, and the range of light transmittance may reach 86-92%, which is more conducive to application in the display device.
Optionally, as shown in
The opening width D1 of the second groove in the first direction (the OA direction shown in the figure) is less than the opening width D2 of the third groove in the first direction (the OA direction shown in the figure).
In the method for fabricating the transparent antenna provided in the embodiments of the present application, the electrode layer with a high depth-to-width ratio, i.e., a metal wire with a high depth-to-width ratio may be obtained by providing the electrode layer in the second groove of the mask layer and the third groove of the dielectric layer, controlling the thickness of the electrode layer along the direction perpendicular to the first substrate by the thicknesses of the second groove of the mask layer and the third groove of the dielectric layer along the direction perpendicular to the first substrate, and controlling the width of the electrode layer along the direction parallel to the first substrate by the widths of the second groove of the mask layer and the third groove of the dielectric layer along the direction parallel to the first substrate. Since the opening width of the second groove in the first direction is less than the opening width of the third groove in the first direction, the electrode layer may further narrowed along the direction away from the first substrate by the second groove of the mask layer, and the electrode layer which is thinner in the first direction may be obtained, i.e., the radiation pattern and the feed line in the transparent antenna have a higher depth-to-width ratio, the transparent antenna may radiate efficiently, and when the transparent antenna with extremely thin line widths of metal wires is applied to the electronic device, such as integrated in the display device, the influence on the display function of the display device may be greatly reduced or even eliminated. On the other hand, the light transmittance of the electrode layer may be effectively improved by setting the radiation pattern and the feed line as grid linear structures, so that the transparent antenna as a whole has a transparent effect with excellent light transmittance, and the range of light transmittance may reach 86-92%, which is more conductive to application in the display device.
Optionally, the material of the dielectric layer includes flexible material, so that a flexible transparent antenna may be obtained.
The flexible material is not specifically limited. Exemplarily, the flexible material may include COP (Copolymers of Cycloolefin), PI, PET (Polyethylene Terephthalate), etc.
Optionally, as shown in
The above process for removing the first substrate the filling layer 5 is not specifically limited. Exemplarily, the first substrate may be removed by mechanical or laser sintering, etc.
In the method for fabricating the transparent antenna provided in the embodiments of the present application, the flexible material may be directly attached to the first substrate to form a dielectric layer, and a third groove may be directly etched on the flexible dielectric layer without the organic adhesive layer, and finally the flexible dielectric layer may be conveniently removed from the first substrate by Lami process, which is easy to separate.
Optionally, the material of the mask layer includes a non-metallic material.
The non-metallic material is not specifically limited. Exemplarily, the non-metallic material may be silicon nitride (SiN), silicon oxide (SiO), silicon oxynitride (SiON), etc.
Optionally, as shown in
In S7, a first photoresist 4 is formed on the mask layer 3.
In S8, the first photoresist 4 is processed, so that the mask layer 3 has a second groove k2.
The process for fabricating the second groove is not specifically limited. Exemplarily, the first photoresist may be patterned, the mask layer may be processed by dry etching, so that the mask layer has the second groove.
In S9, the dielectric layer 2 is processed to have a third groove k3.
The process for fabricating the third groove is not specifically limited. Exemplarily, the dielectric layer may be etched by an ICP (Inductively Coupled Plasma Etching) process, and the gas flow rate, etching time, etc., may be controlled, so as to obtain the third groove. The width of the third groove along the OA direction is greater than the width of the second groove along the OA direction. The gas flow rate, etching time, etc., may be determined according to the device.
In S10, the first photoresist 4 is removed.
In the method for fabricating the transparent antenna provided in the embodiments of the present application, the mask layer may be processed by dry etching, and the dielectric layer may be processed by ICP, which is simple and easy to realize.
Optionally, the material of the mask layer includes a metal material. The dielectric layer may be patterned by using a metal hard mask as a mask plate, and then the electrode layer is electroplated, which is simple and easy to realize.
The metal material is not specifically limited. Exemplarily, the metal material may include ITO (Indium Tin Oxides), molybdenum (Mo), aluminum (Al), etc.
The above process for fabricating the mask layer is not specifically limited. Exemplarily, the metal mask layer may be patterned by dry etching. Alternatively, the metal mask layer may be patterned by wet etching.
Optionally, as shown in
In S11, the first photoresist 4 is formed on the mask layer 3.
In S12, the first photoresist 4 is processed, so that the mask layer 3 has the second groove.
The above process for processing the first photoresist is not specifically limited. Exemplarily, the first photoresist and the mask layer may be processed by dry etching and wet etching, so that the mask layer has the second groove. Specifically, the first photoresist may be dry etched first, and then the mask layer may be wet etched, so that the mask layer has the second groove.
In S13, the first photoresist 4 is removed.
In S14, a second photoresist 6 is formed on the mask layer.
In S15, the dielectric layer 2 is processed to have a third groove.
The above process for processing the dielectric layer is not specifically limited. Exemplarily, the second photoresist and the dielectric layer may be processed by RIE (Reactive Ion Etching), so that the dielectric layer has the third groove.
In S16, the second photoresist 6 is removed.
In the method for fabricating the transparent antenna provided in the embodiments of the present application, the material of the mask layer is metal material, and the mask layer may be correspondingly etched by wet etching. On the one hand, since the thermal tolerance temperature of organic adhesive material is not high, the deposition device for inorganic oxides such as SiON is limited. The low temperature TFECVD deposition is generally used, while the deposition temperature of depositing metal by sputter is generally low, which is much lower than that of organic adhesive material, so that the selection range of the material is enlarged. On the other hand, the second groove of the dielectric layer obtained by the fabricating method of the embodiments of the present application has a smaller angle (slope angle) between the second groove of the dielectric layer and the first substrate, compared to the second groove of the dielectric layer obtained only by dry etching, ICP, etc., so that the protection area of the fourth groove of the filling layer for vertical etching may be expanded after forming the fourth groove of the filling layer.
Optionally, as shown in
In S17, the first photoresist 4 is formed on the mask layer 3.
In S18, the first photoresist 4 is processed, so that the mask layer 3 has the second groove.
In S19, the dielectric layer 2 is processed to have the third groove.
In S20, the first photoresist 4 is removed.
In the method for fabricating the transparent antenna provided in the embodiments of the present application, the step of removing the first photoresist 4 in panel g of
Optionally, as shown in
The structure of the above first sub-filling layer is not specifically limited. Exemplarily, the first sub-filling layer may be an overall structure; alternatively, the first sub-filling layer may include a plurality of filling portions.
The structure of the above second sub-filling layer is not specifically limited. Exemplarily, the second sub-filling layer may be an overall structure; alternatively, the second sub-filling layer may include a plurality of filling portions.
The structure of the above third sub-filling layer is not specifically limited. Exemplarily, the third sub-filling layer may be an overall structure; or, the third sub-filling layer may include a plurality of filling portions.
The shape of the groove between the first sub-filling layer and the third sub-filling layer along the direction perpendicular to the first substrate is not specifically limited. Exemplarily, the shape of the groove between the first sub-filling layer and the third sub-filling layer along the direction perpendicular to the first substrate may be a rectangle, an irregular shape, etc.
In the method for fabricating the transparent antenna provided in the embodiments of the present application, the opening width of the groove between the first sub-filling layer and the third sub-filling layer in the OA direction is set to be less than the opening width of the second groove of the mask layer in the OA direction, so that the electrode layer may be further narrowed along the direction away from the first substrate by the filling layer, the electrode layer which is thinner along the first direction may be obtained, i.e., the radiation pattern and the feed line in the transparent antenna have a higher depth-to-width ratio, the transparent antenna may radiate efficiently; and when the transparent antenna with extremely thin line widths of metal wires is applied to the electronic device, such as integrated in the display device, the influence on the display function of the display device may be greatly reduced or even eliminated.
Optionally, as shown in
The structures of the first filling portion and the second filling portion are not specifically limited. Exemplarily, the structures of the first filling portion and the second filling portion may be the same; alternatively, the structures of the first filling portion and the second filling portion may be different.
The structures of the third filling portion and the fourth filling portion are not specifically limited. Exemplarily, the structures of the third filling portion and the fourth filling portion may be the same; alternatively, the structures of the third filling portion and the fourth filling portion may be different.
In the method for fabricating the transparent antenna provided in the embodiments of the present application, the opening width of the groove between the first filling portion and the third filling portion in the OA direction is set to be less than the opening width of the groove between the second filling portion and the fourth filling portion in the OA direction, so that the electrode layer may be further narrowed in the direction far away from the first substrate through the first filling portion and the third filling portion, and the electrode layer which is thinner along the first direction may be obtained, i.e., the radiation pattern and the feed line in the transparent antenna have a higher depth-to-width ratio, the transparent antenna may radiate efficiently; and when the transparent antenna with extremely thin line width of metal wire is applied to the electronic device, such as integrated in the display device, the influence on the display function of the display device may be greatly reduced or even eliminated.
Optionally, as shown in
As shown in
d1 satisfies the requirement of d1<L1/1.4; otherwise, the opening of the groove will be sealed. Even if the line width may reach up to 5 μm after photolithography and etching, L3 may be narrowed to less than 2 μm by only depositing SiON in a thickness of about 2 μm.
It should be noted that not etching to the bottom of the dielectric layer has the advantage that the depth of the groove is not affected by the thickness of the dielectric layer and the process window is larger, but has the disadvantage that the etching quality at the bottom of the groove will decrease. The actual processing effect is shown in
In the process for fabricating the transparent antenna provided in the embodiments of the present application, the butterfly shaped groove is formed in the filling layer by the current semiconductor process, which not only effectively protects the material in the groove from being etched in the vertical etching process, but also facilitate the fabrication of the thin metal wires. In addition, the butterfly shaped groove does not require high accuracy of the device exposure and etching, for example, an initial exposure line width is 5 μm. In the butterfly shaped groove, the line width at the opening of the groove may be narrowed to less than 2 μm, and the line width of the metal wire in the electrode layer depends on the line width at the opening of the groove. In this way, metal wires with thin line width and large thickness may be obtained, which exceeds the accuracy of the device exposure and etching, i.e., the butterfly shaped groove may break through the process limits of the device. That is, the present application provides a process for preparing thin metal wires by the butterfly shaped groove, which may effectively improve the existing processing accuracy and obtain a metal grid conductive film with better optical transparency.
It should be noted that this solution is not limited to the preparation of thin metal wires of 2 μm, and may be used to prepare patterns exceeding the device accuracy.
Optionally, as shown in
In S01, a leveling layer 7 is formed at least in the fourth groove k4 of the filling layer 5.
The above forming the leveling layer at least in the fourth groove of the filling layer refers to forming the leveling layer only in the fourth groove of the filling layer; alternatively, in addition to forming the leveling layer in the fourth groove of the filling layer, forming the leveling layer in other structures.
A material of the leveling layer is not specifically limited. Exemplarily, the material of the leveling layer may include organic material with a lower viscosity and a weaker deformation. Optionally, the material of the leveling layer may be organic adhesive material with high light transmittance.
In S02, the leveling layer 7 is processed to at least partially fill the groove between the second filling portion 512 and the fourth filling portion 532.
The above processing the leveling layer to at least partially fill the groove between the second filling portion and the fourth filling portion refers to: processing the leveling layer to partially fill the groove between the second filling portion and the fourth filling portion; alternatively, processing the leveling layer to fully fill the groove between the second filling portion and the fourth filling portion. Panel c of
S411: forming the electrode layer 10 in the fourth groove k4 of the filling layer 5 includes:
S03: forming the electrode layer 10 at least in the groove between the first filling portion 511 and the third filling portion 531.
The above forming the electrode layer at least in the groove between the first filling portion and the third filling portion refers to: forming the electrode layer only in the groove between the first filling portion and the third filling portion; alternatively, in addition to forming the electrode layer in the groove between the first filling portion and the third filling portion, forming the electrode layer at other positions which is not specifically limited.
In the method for fabricating the transparent antenna provided in the embodiments of the present application, a leveling effect can be achieved by forming the leveling layer on the electrode layer. Due to the unevenness of metal for electroplating the electrode layer, part of the groove is not filled, and the metal surface morphology of the electroplated electrode layer is uneven. Thus, it is necessary to use the leveling layer for flattening to avoid the metal surface morphology of the electrode layer from affecting the transmittance.
Optionally, as shown in
S011: forming the leveling layer 7 on the surface of the filling layer 5 on the side away from the first substrate 1, and in the fourth groove k4 of the filling layer 5.
S02: processing the leveling layer 7 to at least partially fill the groove between the second filling portion 512 and the fourth filling portion 532 includes:
S021: processing the leveling layer 7 to be located between the first filling portion 511 and the first substrate 1, between the third filling portion 531 and the first substrate 1, and have a fifth groove k5.
S03: forming the electrode layer 10 at least in the groove between the first filling portion 511 and the third filling portion 531 includes:
S031: forming the electrode layer 10 in the groove between the first filling portion 511 and the third filling portion 531 and in the fifth groove k5.
In the method for fabricating the transparent antenna provided in the embodiments of the present application, the line width of the metal wire may be determined by the line width at the opening of the groove, so that a metal wire with thin line width and large thickness may be obtained, which exceeds the limitations of device exposure accuracy, etching accuracy, etc., and has a wide range of application.
Optionally, as shown in
In S04, a seed layer 8 is formed in part of the fifth groove k5, and on a side of the first filling portion 511 and the third filling portion 531 away from the first substrate 1.
The seed layer 8 in the fifth groove k5 is in contact with the second sub-filling layer 52; and the seed layer 8 on the side of the first filling portion 511 and the third filling portion 531 away from the first substrate 1 has a sixth groove k6.
A material of the above seed layer is not specifically limited. Exemplarily, the material of the above seed layer may include metals or metal alloys or metal oxides such as copper (Cu), silver (Ag), molybdenum and copper alloy (Mo/Cu), indium tin oxide and silver alloy (ITO/Ag), etc. Optionally, the material of the seed layer may be copper or silver.
The above process for fabricating the seed layer is not specifically limited. Exemplarily, the seed layer may be formed by sputter. It should be noted the seed layer may be not provided, but the process for fabricating the electrode layer may be changed.
In S05, a third photoresist 9 is formed in the fifth groove k5, in the groove between the first filling portion 511 and the third filling portion 531, in the sixth groove k6, and on the surface of the seed layer 8 on the side away from the first substrate 1.
The above process for fabricating the third photoresist is not specifically limited. Exemplarily, the third photoresist may be spin-coated, exposed and developed for patterning. The size of the exposed pattern is larger than that of the exposed pattern before etching, so as to reduce the difficulty of photolithography alignment.
In S06, the seed layer 8 on the side of the first filling portion 511 and the third filling portion 531 away from the first substrate 1 is processed to be located between the third photoresist 9 and the first filling portion 511 and the third filling portion 531.
Exemplarily, the seed layer which is not protected by the third photoresist may be removed by wet etching.
In S07, the third photoresist 9 is processed to be located in the fifth groove k5, and the groove between the first filling portion 511 and the third filling portion 531.
The above process for processing the third photoresist is not specifically limited. Exemplarily, the third photoresist may be processed by RIE.
In S08, the seed layer 8 on the side of the first filling portion 511 and the third filling portion 531 away from the first substrate 1 is removed.
The above process for removing the seed layer on the side of the first filling portion and the third filling portion away from the first substrate is not specifically limited. Exemplarily, the seed layer outside the groove may be removed by wet etching.
In S09, the third photoresist 9 is removed.
The process for removing the third photoresist is not specifically limited. Exemplarily, the third photoresist may be peeled off.
S031: forming the electrode layer 10 in the groove between the first filling portion 511 and the third filling portion 531 includes:
S0311: forming the electrode layer 10 on the seed layer 8.
The electrode layer 10 is located in the fifth groove k5, and in the groove between the first filling portion 511 and the third filling portion 531.
The above process for forming the electrode layer is not specifically limited. Exemplarily, the electrode layer may be formed by electroplating.
In the method for fabricating the transparent antenna provided in the embodiments of the present application, on the one hand, forming the seed layer before forming the electrode layer is favorable to the subsequent fabrication of the electrode layer, and especially favorable to the later electroplating the electrode layer with thicker metal; on the other hand, the remaining area of the third photoresist after photolithography is small, and in the case of a metal grid, for example, the remaining is generally not more than 5%.
Optionally, as shown in
In S04, the seed layer 8 is formed in part of the fifth groove k5, and on the side of the first filling portion 511 and the third filling portion 531 away from the first substrate 1.
The seed layer 8 in the fifth groove k5 is in contact with the second sub-filling layer 52; and the seed layer 8 on the side of the first filling portion 511 and the third filling portion 531 away from the first substrate 1 has the sixth groove k6.
In S10, the third photoresist 9 is formed in the fifth groove k5, in the groove between the first filling portion 511 and the third filling portion 531, in the sixth groove k6, and on the surface of the seed layer 8 on the side away from the first substrate 1.
In S11, the third photoresist 9 is processed to be located in the fifth groove k5, and in the groove between the first filling portion 511 and the third filling portion 531.
In S12, the seed layer 8 on the side of the first filling portion 511 and the third filling portion 531 away from the first substrate 1 is removed.
In S13, the third photoresist 9 is removed.
S031: forming the electrode layer 10 in the groove between the first filling portion 511 and the third filling portion 531 includes:
S0311: forming the electrode layer 10 on the seed layer 8.
The electrode layer 10 is located in the fifth groove k5, and in the groove between the first filling portion 511 and the third filling portion 531.
In the method for fabricating the transparent antenna provided in the embodiments of the present application, the photolithography step as shown in panel f of
Optionally, as shown in
In S04, the seed layer 8 is formed in part of the fifth groove k5, and on the side of the first filling portion 511 and the third filling portion 531 away from the first substrate 1.
The seed layer 8 in the fifth groove k5 is in contact with the second sub-filling layer 52; and the seed layer 8 on the side of the first filling portion 511 and the third filling portion 531 away from the first substrate 1 has the sixth groove k6.
In S014, the third photoresist 9 is formed in the fifth groove k5, and in the groove between the first filling portion 511 and the third filling portion 531.
In S015, the seed layer 8 on the side of the first filling portion 511 and the third filling portion 531 away from the first substrate is removed.
In S016, the third photoresist 9 is removed.
S031: forming the electrode layer 10 in the groove between the first filling portion 511 and the third filling portion 531 includes:
S0311: forming the electrode layer 10 on the seed layer 8.
The electrode layer 10 is located in the fifth groove k5, and in the groove between the first filling portion 511 and the third filling portion 531.
In the method for fabricating the transparent antenna provided in the embodiments of the present application, the etching of the seed layer outside the groove is directly accomplished by one photolithography, which may reduce the number of process steps, especially the number of dry etching (copper (Cu) etching), greatly save the cost, and reduce environmental pollution caused by copper etching solution.
Optionally, as shown in
S010: forming the leveling layer 7 on a side of the filling layer 5 away from the first substrate 1, and in the fourth groove k4 of the filling layer 5.
S017: processing the leveling layer 7 to at least partially fill the groove between the second filling portion 512 and the fourth filling portion 532 includes:
S018: processing the leveling layer 7 to fully fill the groove between the second filling portion 512 and the fourth filling portion 532.
S03: forming the electrode layer 10 at least in the groove between the first filling portion 511 and the third filling portion 531 includes:
S031: forming the electrode layer 10 in the groove between the first filling portion 511 and the third filling portion 531.
In the method for fabricating the transparent antenna provided in the embodiments of the present application, during etching the leveling material, the etching time may be controlled to etch to a lower edge of the butterfly shaped groove, so that lateral etching may be almost completely avoided, and the line width of metal wire may be further reduced.
Optionally, as shown in
In S019, the seed layer 8 is formed on the leveling layer 7, and the side of the first filling portion 511 and the third filling portion 531 away from the first substrate.
The seed layer 8 on the leveling layer 7 is partially located in the groove between the first filling portion 511 and the third filling portion 531, and the seed layer 8 on the side of the first filling portion 511 and the third filling portion 531 away from the first substrate 1 have the sixth groove k6.
In S020, the third photoresist 9 is formed in the groove between the first filling portion 511 and the third filling portion 531, in the sixth groove k6, and on part of the surface of the seed layer 8 on the side away from the first substrate 1.
In S021, the seed layer on the side of the first filling portion 511 and the third filling portion 531 away from the first substrate 1 is processed to retain the seed layer 8 between the third photoresist 9 and the first filling portion 511 and the third filling portion 531.
In S022, the third photoresist 9 is processed to be located in part of the groove between the first filling portion 511 and the third filling portion 531.
In S023, the seed layer 8 on the side of the first filling portion 511 and the third filling portion 531 away from the first substrate 1 is removed.
In S024, the third photoresist 9 is removed.
S031: forming the electrode layer 10 in the groove between the first filling portion 511 and the third filling portion 531 includes:
S0311: forming the electrode layer 10 on the seed layer 8.
The electrode layer 10 is located in the groove between the first filling portion 511 and the third filling portion 531.
In the method for fabricating the transparent antenna provided in the embodiments of the present application, during etching the leveling material, the etching time may be controlled to etch to a lower edge of the butterfly shaped opening, so that lateral etching may be completely avoided, and the line width of metal wire may be further reduced.
As shown in
In S0011, as shown in
In S0012, as shown in
In S0013, as shown in
In S0014, as shown in
In S0015, as shown in
In S0016, as shown in
In S0017, as shown in
In S0018, as shown in
As shown in
In S0021, as shown in
In S0022, as shown in
In S0023, as shown in
In S0024, as shown in
In S0025, as shown in
In S0026, as shown in
In S0027, as shown in
In S0028, as shown in
In S0029, as shown in
As shown in
In S0031, as shown in
In S0032, as shown in
In S0033, as shown in
In S0034, as shown in
In S0035, as shown in
In S0036, as shown in
In S0037, as shown in
In S0038, as shown in
In S0039, as shown in
As shown in
In S0041, as shown in
In S0042, as shown in
In S0043, as shown in
In S0044, as shown in
In S0045, as shown in
In S0046, as shown in
In S0047, as shown in
In S0048, as shown in
As shown in
In S0050, as shown in
In S0051, as shown in
In S0052, as shown in
In S0053, as shown in
In S0054, as shown in
In S0055, as shown in
In S0056, as shown in
In S0057, as shown in
In S0058, as shown in
In S0059, as shown in
It should be noted that the material of the seed layer and the material of the electrode layer may be the same or different, and are not specifically limited.
As shown in
In S0060, as shown in
In S0061, as shown in
In S0062, as shown in
In S0063, as shown in
In S0064, as shown in
In S0065, as shown in
In S0066, as shown in
In S0067, as shown in
In S0068, as shown in
In S0069, as shown in
As shown in
In S0070, as shown in
In S0071, as shown in
In S0072, as shown in
In S0073, as shown in
In S0074, as shown in
In S0075, as shown in
In S0076, as shown in
In S0077, as shown in
In S0078, as shown in
As shown in
In S0080, as shown in
In S0081, as shown in
In S0082, as shown in
In S0083, as shown in
In S0084, as shown in
In S0085, as shown in
In S0086, as shown in
In S0087, as shown in
The embodiments of the present application further provide a transparent antenna fabricated by the above method for fabricating the transparent antenna. As shown in
In the transparent antenna provided in the embodiments of the present application, on the one hand, the electrode layer with a high depth-to-width ratio, that is, a metal wire with a high depth-to-width ratio, may be obtained by controlling the thickness of the electrode layer in the direction perpendicular to the first substrate by the thickness of the first groove of the defining layer along the direction perpendicular to the first substrate, and controlling the width of the electrode layer along the direction parallel to the first substrate by the width of the first groove of the defining layer along the direction parallel to the first substrate. Since the first groove of the defining layer is along the direction perpendicular to the first substrate, the opening width of the first groove in the first direction where the spacing between the first groove and the first substrate is the first distance is less than the opening width of the first groove in the first direction where the spacing between the first groove and the first substrate is the second distance, and the first distance is greater than the second distance, so that the electrode layer may be further narrowed along a direction away from the first substrate, and the electrode layer which is thinner along the first direction may be obtained, i.e., the radiation pattern and the feed line in the transparent antenna have a higher depth-to-width ratio, the transparent antenna may radiate efficiently, and when the transparent antenna with extremely thin line widths of metal wires is applied to the electronic device, such as integrated in the display device, the influence on the display function of the display device may be greatly reduced or even eliminated. On the other hand, the light transmittance of the electrode layer may be effectively improved by setting the radiation pattern and the feed line as grid linear structures, so that the transparent antenna as a whole has a transparent effect with excellent light transmittance, and the range of light transmittance may reach 86-92%, which is more conductive to application in the display device.
Optionally, as shown in
In the transparent antenna provided in the embodiments of the present application, since the electrode layer is provided in the second groove of the mask layer and the third groove of the dielectric layer, the electrode layer with a high depth-to-width ratio, that is, a metal wire with a high depth-to-width ratio, may be obtained by controlling the thickness of the electrode layer in the direction perpendicular to the first substrate by the thicknesses of the second groove of the mask layer and the third groove of the dielectric layer along the direction perpendicular to the first substrate, and controlling the width of the electrode layer along the direction parallel to the first substrate by the widths of the second groove of the mask layer and the third groove of the dielectric layer along the direction parallel to the first substrate. Since the opening width of at least part of the second groove in the first direction is less than the opening width of the third groove in the first direction, so that the electrode layer may be further narrowed along a direction away from the first substrate by the second groove of the mask layer, and the electrode layer which is thinner along the first direction may be obtained, i.e., the radiation pattern and the feed line in the transparent antenna have a higher depth-to-width ratio, the transparent antenna may radiate efficiently, and when the transparent antenna with extremely thin line width of metal wire is applied to the electronic device, such as integrated in the display device, the influence on the display function of the display device may be greatly reduced or even eliminated. On the other hand, the light transmittance of the electrode layer may be effectively improved by setting the radiation pattern and the feed line as grid linear structures, so that the transparent antenna as a whole has a transparent effect with excellent light transmittance, and the range of light transmittance may reach 86-92%, which is more conductive to application in the display device.
Optionally, as shown in
In the transparent antenna provided in the embodiments of the present application, since the electrode layer is provided in the fourth groove of the filling layer, the electrode layer with a high depth-to-width ratio, that is, a metal wire with a high depth-to-width ratio, may be obtained by controlling the thickness of the electrode layer in the direction perpendicular to the first substrate by the thickness of the fourth groove of the filling layer along the direction perpendicular to the first substrate, and controlling the width of the electrode layer along the direction parallel to the first substrate by the width of the fourth groove of the filling layer along the direction parallel to the first substrate. Since the opening width of the fourth groove of the filling layer in the first direction is less than the opening width of the second groove in the first direction and the opening width of the third groove in the first direction, so that the electrode layer may be further narrowed along a direction away from the first substrate by the fourth groove of the filling layer, and the electrode layer which is thinner along the first direction may be obtained, i.e., the radiation pattern and the feed line in the transparent antenna have a higher depth-to-width ratio, the transparent antenna may radiate efficiently, and when the transparent antenna with extremely thin line widths of metal wires is applied to the electronic device, such as integrated in the display device, the influence on the display function of the display device may be greatly reduced or even eliminated. On the other hand, the light transmittance of the electrode layer may be effectively improved by setting the radiation pattern and the feed line as grid linear structures, so that the transparent antenna as a whole has a transparent effect with excellent light transmittance, and the range of light transmittance may reach 86-92%, which is more conductive to application in the display device.
Optionally, as shown in
The leveling layer in the transparent antenna provided in the embodiments of the present application may play a leveling role. Due to the unevenness of metal for electroplating the electrode layer, part of the groove is not filled, and the metal surface morphology of the electroplated electrode layer is uneven. Thus, it is necessary to use the leveling layer for flattening to avoid the metal surface morphology of the electrode layer from affecting the transmittance. In addition, forming the seed layer before forming the electrode layer is favorable for subsequent fabricating the electrode layer, especially for the later electroplating the electrode layer with thick metal.
Optionally, as shown in
The leveling layer in the transparent antenna provided in the embodiments of the present application may play a leveling role. Due to the unevenness of the electroplating metal of the electrode layer, part of the groove is not filled, and the metal surface morphology of the electroplated electrode layer is uneven. Thus, it is necessary to use the leveling layer for flattening to avoid the metal surface morphology of the electrode layer from affecting the transmittance. In addition, forming the seed layer before forming the electrode layer is favorable for subsequent fabricating the electrode layer, especially for the later electroplating the electrode layer with thick metal.
The various structures of the transparent antenna in the embodiments of the present application may be obtained by the above methods for fabricating the transparent antenna, and will not be repeated here.
The embodiments of the present application further provide an electronic device including the above transparent antenna.
The above electronic device may be applied to a variety of glass substrate-based circuit scenarios, and is not specifically limited. The above electronic device may include a terminal electronic device, a base station antenna electronic device, an indoor miniaturized relay device, an outdoor miniaturized relay device, a portable device for satellite communication, a mobile communication device, and any other products or components with a function of transmitting and/or receiving electromagnetic waves. The above electronic device may also be applied to related electronic devices in other communication scenarios, etc. Products which have been promoted or have good promotion prospects include a mobile phone, a tablet, Wi-Fi (Wireless Fidelity), radar, etc.
In the electronic device provided in the embodiments of the present application, on the one hand, since the electrode layer is provided in the first groove of the defining layer, the electrode layer with a high depth-to-width ratio, that is, a metal wire with a high depth-to-width ratio, may be obtained by controlling the thickness of the electrode layer in the direction perpendicular to the first substrate by the thickness of the first groove of the defining layer along the direction perpendicular to the first substrate, and controlling the width of the electrode layer along the direction parallel to the first substrate by the width of the first groove of the defining layer along the direction parallel to the first substrate. Since the first groove of the defining layer is along the direction perpendicular to the first substrate, the opening width in the first direction of the first groove at the first distance between the first groove and the first substrate is less than the opening width in the first direction of the first groove at the second distance between the first groove and the first substrate, and the first distance is greater than the second distance, so that the electrode layer may be further narrowed along a direction away from the first substrate, and the electrode layer which is thinner along the first direction may be obtained, i.e., the radiation pattern and the feed line in the transparent antenna have a higher depth-to-width ratio, the transparent antenna may radiate efficiently, and when the transparent antenna with extremely thin line width of metal wire is applied to the electronic device, such as integrated in the display device, the influence on the display function of the display device may be greatly reduced or even eliminated. On the other hand, the light transmittance of the electrode layer may be effectively improved by setting the radiation pattern and the feed line as grid linear structures, so that the transparent antenna as a whole has a transparent effect with excellent light transmittance, and the range of light transmittance may reach 86-92%, which is more conductive to application in the display device.
Optionally, as shown in
The above display substrate may include an LCD (Liquid Crystal Display) substrate or an OLED (Organic Light-Emitting Diode) display substrate, which is not specifically limited.
The above transparent antenna is provided on the light-emitting side of the display substrate, and does not affect the display of the display substrate due to its transparency.
In the electronic device provided in the embodiments of the present application, since the electrode layer is provided in the first groove of the defining layer, the electrode layer with a high depth-to-width ratio, that is, a metal wire with a high depth-to-width ratio, may be obtained by controlling the thickness of the electrode layer in the direction perpendicular to the first substrate by the thickness of the first groove of the defining layer along the direction perpendicular to the first substrate, and controlling the width of the electrode layer along the direction parallel to the first substrate by the width of the first groove of the defining layer along the direction parallel to the first substrate. Since the first groove of the defining layer is along the direction perpendicular to the first substrate, the opening width in the first direction of the first groove at the first distance between the first groove and the first substrate is less than the opening width in the first direction of the first groove at the second distance between the first groove and the first substrate, and the first distance is greater than the second distance, so that the electrode layer may be further narrowed along a direction away from the first substrate, and the electrode layer which is thinner along the first direction may be obtained, i.e., the radiation pattern and the feed line in the transparent antenna have a higher depth-to-width ratio, the transparent antenna may radiate efficiently, and when the transparent antenna with extremely thin line width of the metal wire is applied to the electronic device, such as integrated in the display device, the influence on the display function of the display device may be greatly reduced or even eliminated.
Optionally, as shown in
The touch control layer 202 is provided between the display substrate 201 and the transparent antenna TX; alternatively, the touch control layer 202 is provided on a side of the transparent antenna TX away from the display substrate 201.
The first polarization unit 203 is provided on the side of the transparent antenna TX away from the display substrate 201.
The cover plate 204 is provided on a side of the first polarization unit 203 away from the display substrate 201.
The structure of the above touch control layer is not limited. Exemplarily, the touch control layer may adopt a mutual-capacitance touch control structure or a self-capacitance touch control structure. The mutual-capacitance touch control structure or the self-capacitance touch control structure may be obtained according to relevant technology, and will not be described in detail here. Exemplarily, the structure of the touch control layer may include an FMLOC (Flexible Multi-Layer On Cell) touch control structure, which may reduce the thickness of the screen and facilitate folding. In addition, there is no bonding tolerance, so that the frame width may be reduced. The FMLOC structure may be obtained according to relevant technology, and will not be described in detail here.
The electronic device provided in the embodiments of the present application has a touch control layer which does not affect the normal operation of the antenna and may also realize the touch control function.
The material, type, etc. of the above first polarization unit are not specifically limited. Exemplarily, the material of the above first polarization unit may include PVA (polyvinyl alcohol) or PVC (polyvinyl chloride). Exemplarily, the type of the above first polarizing unit may include a line polarizer or a grating.
The material, structure, etc. of the above cover plate are not specifically limited. Exemplarily, the material of the above cover plate may include glass. Exemplarily, the above cover plate may include one layer; alternatively, it may also include multiple layers.
The electronic device provided in the embodiments of the present application has the first polarization unit, so that the polarization direction of light may be changed to achieve better display. In addition, because of the cover plate, the electronic device may protect the screen and prevent the screen from being scratched.
It should be noted that, as shown in
Moreover, the first polarization unit may also be used as a cover plate.
As shown in
As shown in
As shown in
As shown in
Only the content related to the innovation point is presented here, and the rest of the structure may be obtained by referring to relevant technology, and will not be described in detail here.
As shown in
As shown in
As shown in
As shown in
Optionally, as shown in
The display panel includes a display region and a frame region connected to the display region. The transparent antenna TX is provided in the display region and the frame region, and the transparent antenna TX in the display region is a grid linear structure. The second controller 42 is electrically connected to the transparent antenna TX in the frame region, and is configured to control the transparent antenna TX.
The types of the first controller and the second controller are not specifically limited. Exemplarily, the first controller and the second controller may include a chip, such as FPC (Flexible Printed Circuit), PCB (Printed Circuit Boards), etc.
The method in which the first controller is electrically connected to the display substrate is not specifically limited. Exemplarily, the first controller and the display substrate may be directly electrically connected; alternatively, the first controller and the display substrate may be electrically connected through other structures.
The method in which the second controller is electrically connected to the transparent antenna is not specifically limited. Exemplarily, the second controller and the transparent antenna may be directly electrically connected; alternatively, the second controller and the transparent antenna may be electrically connected through other structures.
In the display device provided in the embodiments of the present application, the first controller and the second controller may control operations of the display substrate and the transparent antenna respectively, so that the RF chip and the connection board of the antenna may be used separately without being integrated with the display chip (the process is incompatible), which is simple and easy to realize.
The above display region refers to a region where displaying is implemented, and the frame region is generally a region where a drive trace, a drive circuit such as a GOA (Gate Driver on Array) drive circuit is provided, or an in-screen camera, an earphone, or a loudspeaker, etc., is provided.
The method in which the first controller is bound to the display substrate in the frame region is not specifically limited. Exemplarily, the first controller and the display substrate in the frame region may be directly bound; alternatively, the first controller and the display substrate located in the frame region may be bound through other structures.
It should be noted that the transparent antenna in the display region is a highly transparent grid linear structure, and the transparent antenna in the frame region is not limited. Exemplarily, it may be a grid linear structure or a solid structure.
The embodiments of the present application further provide a method for driving the above electronic device.
The driving method includes:
In the method for driving the electronic device provided in the embodiments of the present application, the first controller and the second controller may control operations of the display substrate and the transparent antenna, respectively, so that an RF chip and a connection board of the antenna may be used separately without being integrated with the display chip (the process is not compatible), which is simple and easy to realize.
The description provided herein describes many concrete details. However, it may be understood that the embodiments of the present application may be implemented without those concrete details. In some of the embodiments, well-known processes, structures and techniques are not described in detail, so as not to affect the understanding of the description.
Finally, it should be noted that the above embodiments are merely intended to explain the technical solutions of the present application, and not to limit them. Although the present application is explained in detail with reference to the above embodiments, a person skilled in the art should understand that he can still modify the technical solutions set forth by the above embodiments, or make equivalent substitutions to part of the technical features of them. However, those modifications or substitutions do not make the essence of the corresponding technical solutions depart from the spirit and scope of the technical solutions of the embodiments of the present application.
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/CN2023/082061 | 3/17/2023 | WO |
