Claims
- 1. A process for preparing a substantially transparent, high density polycrystalline yttria-based body comprising the steps of:
- admixing alumina or a precursor thereof convertible by sintering to alumina, with yttria or a precursor thereof convertible by sintering to yttria to form a mixture, the alumina or precursor thereof being present in the mixture in an amount to provide between about 0.01 and 5 wt. % alumina upon subsequent sintering;
- drying the resulting powder;
- calcining the dried powder at 1000.degree. C. in air;
- pressing the calcined powder into a given shape; and sintering the shaped powder for about 1/4 to six hours above the eutectic temperature in an atmosphere sufficiently low in oxygen to prevent oxidative contamination.
- 2. A process as defined in claim 1 wherein the alumina precursors are Al(NO.sub.3).sub.3 or Al(OH).sub.3.
- 3. A process as defined in claim 1 wherein the yttria precursors are Y.sub.2 (CO.sub.3).sub.3 or Y.sub.2 (C.sub.2 O.sub.4).sub.3.
- 4. A process as defined in claim 1 wherein the powders are dried at 110.degree. C.
- 5. A process as defined in claim 1 wherein the dried powder is calcined for about 1 hour at 1000.degree. C. in air.
- 6. A process as defined in claim 1 wherein sintering is effected for 1/4 to six hours at about 2100.degree. C.
- 7. A process as defined in claim 1 wherein sintering is effected at an oxygen pressure of about 2.times.10.sup.-10 atmospheres.
- 8. A process as defined in claim 1 wherein sintering is effected at an oxygen pressure significantly lower than 10.sup.-10 atmospheres and the resulting black product is thereafter oxidized for about 5 hours at 1500.degree. C. in air to obtain a substantially transparent, high density polycrystalline yttria-based body.
- 9. A process for preparing a substantially transparent, high density polycrystalline yttria-based body comprising the steps of:
- admixing alumina or a precursor thereof convertible by sintering to alumina, with yttria or a precursor thereof convertible by sintering to yttria to form a mixture, the alumina or precursor thereof being present in the mixture in an amount to provide between about 0.01 and 5 wt. % alumina upon subsequent sintering;
- drying the resulting powder;
- calcining the dried powder at 1000.degree. C. in air;
- pressing the calcined powder into a given shape; and
- sintering the shaped powder for from about 1 to 8 hours below 1920.degree. C., about 1/4 to 6 hours above 1920.degree. C. and about 1 to 2 hours at or about 1925.degree. C. in an atmosphere sufficiently low in oxygen to prevent oxidative contamination.
- 10. A process as defined in claim 9 wherein the alumina precursors are Al(NO.sub.3).sub.3 or Al(OH).sub.3.
- 11. A process as defined in claim 9 wherein the yttria precursors are Y.sub.2 (CO.sub.3).sub.3 or Y.sub.2 (C.sub.2 O.sub.4).sub.3.
- 12. A process as defined in claim 9 wherein the powders are dried at 110.degree. C.
- 13. A process as defined in claim 9 wherein the dried powder is calcined for about 1 hour at 1000.degree. C. in air.
- 14. A process as defined in claim 9 wherein sintering is effected for from about 1 to 8 hours at a temperature of from about 1700.degree. C. to 1850.degree. C., for from about 1/4 to six hours at a temperature from about 2000.degree. C. to 2400.degree. C. and then for about 1 to 2 hours at about 1875.degree. C. to 1975.degree. C.
- 15. A process as defined in claim 9 wherein sintering is effected below 1920.degree. C. at an oxygen pressure less than or equal to 10.sup.-10 atmospheres, above 1920.degree. C. at an oxygen pressure of about 2.times.10.sup.-10 atmospheres and at or about 1920.degree. C. at an oxygen pressure of about 1.times.10.sup.-10 atmospheres.
- 16. A process as defined in claim 9 wherein sintering is effected at an oxygen pressure significantly lower than 10.sup.-10 atmospheres and the resulting black product is thereafter oxidized for about 5 hours at 1500.degree. C. in air to obtain a substantially transparent, high density polycrystalline yttria-based body.
Parent Case Info
This is a division of application Ser. No. 814,342, filed July 11, 1977 now U.S. Pat. No. 4,098,612.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
3545987 |
Anderson |
Dec 1970 |
|
3588573 |
Chen et al. |
Jun 1971 |
|
Non-Patent Literature Citations (1)
Entry |
Evons, An Introduction to Crystal Chemistry, pp. 38, 39 (1966). |
Divisions (1)
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Number |
Date |
Country |
Parent |
814342 |
Jul 1977 |
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