Patent Application
20090212916
The present invention generally relates to an RFID transponder. More particularly, the present invention relates to an RFID transponder with back scatter modulation.
RFID transponder circuits are widely used in many different applications and are becoming ever more reduced in size, due to finding popular applications in tagging and “electronic passports”. The received antenna voltage of an RFID transponder has to be limited in order to avoid damage due to electrical overstress. The threshold for the limitation is determined by the capabilities of the integrated circuit used in the transponder. Modern deep sub micron processes with a minimum gate length of, e.g. 130 nm or less, are needed for transponder design to integrate more functionality such as larger memories and higher digital gate densities. A disadvantage of these deep sub micron processes is that the voltage resistivity of the devices used in such processes is dramatically reduced. A consequence of the reduced performance in terms of supply voltage in current technologies is that the antenna voltage has to be limited to 3V or below, which results in a reduced operating voltage range for the whole analog front end and digital circuits. A further reduction of the analog front end supply exists due to the voltage drop of the rectifier circuits in such transponders. The rectifier generates the supply of the whole transponder by rectifying the antenna voltage. The voltage drop over the rectifier, together with the reduced limiter threshold of 3V, results in a supply voltage of only about 2.5V, whereas former designs with a limiter threshold of 7V were able to operate at 6V, for a minimum distance between the transponder and read write R/W unit.
In former transponder designs, uplink back scatter modulation was achieved by switching a resistive load in parallel to the antenna and, for strong fields, the antenna limiter threshold was additionally reduced. However, this method of modulating back scatter is not possible for up-to-date transponder designs, since, although acceptable for the high antenna and supply voltage ranges previously used, it tends to induce additional voltage drops to the antenna voltage and can draw the supply voltage out of the limited ranges of current RFID transponders.
It is a general object of the present invention to provide an RFID transponder in which a precise modulation of the back scatter load can be achieved.
This and other objects and features are provided, in accordance with an aspect of the present invention provides an RFID transponder including an antenna and modulation circuitry for back scatter modulation at a local voltage rail connected to the antenna such that a voltage of the antenna is maintained within a predetermined range. The modulation circuitry includes a voltage regulation loop including a rectifier connected between the antenna and the local voltage rail for rectifying a voltage from the antenna so as to load the local voltage rail with the rectified voltage from the antenna. There is an error amplifier for comparing a voltage at the local voltage rail with a modulation voltage and producing an output signal. A switch is provided for switching the modulation voltage between a first reference voltage level and a second reference voltage level. A regulated load is coupled between the output of the error amplifier and the antenna, which is varied in response to the error amplifier output signal. Basically, this provides a regulated load to the antenna, which is controlled on the basis of a data stream to be transmitted using, for example, amplitude shift keying (ASK). The error amplifier compares the antenna voltage with the modulation voltage level, which is derived either from the first reference voltage level or the second reference voltage level. The resultant output voltage of the amplifier is used to control the voltage at the local voltage rail so that it complies with the modulation voltage. In order to obtain the required modulation depth, the first and second reference voltage levels can be adjusted. If the second reference voltage is greater than the first reference voltage level and the second reference voltage is connected to the error amplifier via the switch, then only minor or no additional damping occurs. If the first reference level is used as modulation voltage, the antenna voltage will be pulled down with the regulated load until the local voltage rail is equal to the reference voltage level. The back scatter modulation circuitry is therefore able to work with a dramatically reduced antenna limiter threshold and the modulation depth is controlled by a voltage regulation loop so that a precise and constant modulation depth is achieved independently of the field strength. Since a precise regulation of the antenna voltage can be obtained even at low antenna and supply voltages, the modulation circuitry of the present invention can easily be implemented in a deep sub-micron process.
In an advantageous implementation, the second reference voltage level can be the supply voltage level. Then the local voltage level can have a value fitting to the chip supply. The rectifier is an additional second, rather simple rectifier with respect to the main rectifier used for rectifying the limited antenna voltage, in order to provide an internal supply voltage for the transponder. As such, the rectifier preferably comprises first and second diodes connected in parallel with each other in a forward bias direction from the antenna to the local voltage rail. The voltage drop across each of the diodes may then advantageously correspond to the voltage drop the supply voltage undergoes in the main rectifier, so that the voltage at the local voltage rail is practically equal to the supply voltage level. Therefore, no additional load must be coupled to the antenna if the supply voltage level is used as modulation voltage.
The regulated load can comprise a first damping transistor connected between a first antenna terminal and ground and a second damping transistor connected between a second antenna terminal and ground. Gate terminals of the first and second transistors are then connected to the output of the amplifier, so that they are operable to receive an output signal from the amplifier. The amplifier output signal (the difference between the voltage at the local voltage rail and the modulation voltage) then controls the transistors to provide a load to the antenna so that the voltage at the local voltage rail is lowered until it is the same as the reference voltage. When the supply voltage level is used as the modulation voltage, the damping transistors may basically remain idle, so that no additional current is drawn from the antenna.
An aspect of the present invention also provides a method of modulating backscatter in an RFID transponder. A rectified voltage level of an antenna at a local voltage rail is monitored and a difference of the rectified voltage level with a modulation voltage level is determined. Then the modulation voltage level is varied between a first reference voltage level and a second reference voltage level in accordance with data to be transmitted. Finally, a load coupled to the antenna is controlled, in a way so as to increase or decrease the load based on the determined difference between the modulation voltage level and the rectified antenna voltage until the rectified voltage level is equal to the modulation voltage level. The method according to the invention achieves regulation of the voltage at the antenna and thus modulates the backscatter at the antenna. The method of back scatter modulation of the present invention is able to work with a dramatically reduced antenna limiter threshold and controls the modulation depth by a voltage regulation loop so that a precise and constant modulation depth is achieved independently of the field strength. The modulation depth can be adjusted by adjusting the reference voltage levels. A precise regulation of the antenna voltage can be obtained even at low antenna and supply voltages, which provides the advantage that the method of the present invention can easily be used in a deep sub-micron process. If one of the reference voltage levels is the internal supply voltage, the regulated load can basically be turned off.
Further advantages and characteristics of the invention ensue from the description below of a preferred embodiment, with reference to the accompanying drawing, in which:
A reference voltage generator Vref can be connected via a switch S1 to the negative terminal of the amplifier A1. The supply voltage rail Vcc is also connected to the negative terminal of the amplifier A1 via the switch S1. Both the reference voltage generator Vref and the supply voltage Vcc can be connected via switch S1 to the negative terminal Vmod of the amplifier A1. The switch S1 can then be switched between the reference voltage generator Vref and the supply voltage Vcc using the output signal TX modulation of the data control unit 7 shown in
The output terminal Vout of the amplifier A1 is connected to gate terminals of two NMOS transistors MN1 and MN2. The transistors MN1, MN2 provide a regulated load to the antenna Antenna that establishes the back scatter modulation. The transistor MN1 also has its drain terminal connected to the terminal T1 and its source terminal connected to ground, and the transistor MN2 has its drain terminal connected to the terminal T2 and its source terminal connected to ground. The modulating stage MOD includes the diodes D1 and D2, the regulated load transistors MN1 and MN2, the capacitor-resistor arrangement C1 and R1, the amplifier A1 and the reference voltage generator Vref, connected as described above, as well as the switch S1 for switching between the voltage generator Vref and the supply voltage Vcc.
The voltage at the terminals T1 and T2 is rectified by the diodes D1 and D2, which loads the local voltage rail Vlocal with a rectified voltage, buffered by the resistor-capacitor arrangement C1 and R1. The amplifier A1 compares the voltage at Vlocal with the modulation voltage Vmod. The output of the amplifier A1 is then applied to the gates of the transistors MN1 and MN2, which provide a regulated load to the antenna; i.e., to the terminals T1 and T2, in response to the modulation sequence TX modulation. The voltage at the local voltage rail Vlocal is then controlled until it is equal to the either reference voltage level Vref or the supply voltage level Vcc dependent on the state of the switch S1.
Since the antenna Antenna is damped with the regulated load, the modulation depth of the circuit remains constant. The modulation index is determined by the antenna limiter threshold and the reference voltage, where
m=(limiter threshold−reference voltage)/(limiter threshold+reference voltage).
The capacitor C1 and resistor R1 smooth the voltage at the voltage rail Vlocal, with the time constant of the smoothing circuitry being chosen such that the voltage at the voltage rail Vlocal follows the antenna voltage envelope quickly enough.
Although the present invention has been described with reference to a particular embodiment, it is not limited to this embodiment and no doubt further alternatives will occur to the skilled person that lie within the scope of the invention as claimed.
| Number | Date | Country | Kind |
|---|---|---|---|
| 10 2007 040 855.4 | Aug 2007 | DE | national |
This application claims the benefit of application Ser. No. 60/016,764 filed on Dec. 26, 2003 which is incorporated in it's entirety by reference.
| Number | Date | Country | |
|---|---|---|---|
| 61016764 | Dec 2007 | US |
