Truly Uncoupled Spin Valve Materials

Information

• NSF Award
• 9360587

Owner

• Nonvolatile Electronics, Incorporated

• Award Id

  9360587

• Award Effective Date

  4/1/1994 - 30 years ago

• Award Expiration Date

  12/31/1994 - 30 years ago

• Award Amount

  $ 64,975.00

• Award Instrument

  Standard Grant

9360587 Daughton Spin valve materials have great application potential in Magnetoresistive Random Access Memory (MRAM), tape or disk read heads and magnetic field sensors. However, positive coupling between the two magnetic layers is always present in so-called "uncoupled" spin valve materials today and presents a roadblock for the widespread use of those materials. this coupling reduces the effective anisotropy field for MRAM memory cells, reduces field sensitivity for sensors and may prevent "single domain" behavior in spin valve devices. Positive coupling is believed to be caused by correlated roughness of the interfaces of the magnetic layers through a dipole-to-dipole coupling effect. To obtain truly uncoupled spin valve materials, MER proposes a number of approaches o the spin valve materials using industry-standard equipment. Some of the proposed approaches may also induce a beneficial antiferromagnetic exchange coupling.

• Program Officer

  Darryl G. Gorman

• Min Amd Letter Date

  4/1/1994 - 30 years ago

• Max Amd Letter Date

  4/1/1994 - 30 years ago

• ARRA Amount

• Name

  Nonvolatile Electronics Inc

• City

  Eden Prairie

• State

  MN

• Country

  United States

• Address

  11409 Valley View Road

• Postal Code

  553443617

• Phone Number

  6129961608

• First Name

  James

• Last Name

  Daughton

• Email Address

  daughton@nve.com

• Start Date

  4/1/1994 12:00:00 AM

• Name

  Materials NEC

• Code

  18