Claims
- 1. A method of depositing a metal layer on the surface of a semiconductor substrate having a periphery in a physical vapor deposition chamber comprisinga) positioning a shield adjacent to the periphery of a substrate, b) depositing a metal from a target therefor onto said substrate at a first relatively high pressure sufficient to avoid arcing between said substrate and said shield, c) reducing the chamber pressure to a second, lower pressure so that good quality metal layers are deposited, and d) continuing to deposit said metal layer at said second pressure until a desired thickness is obtained.
- 2. A method according to claim 1 wherein the deposition of step b) is continued until a conductive bridge is formed between said shield and said substrate.
- 3. A method according to claim 1 wherein said metal is W or TiW.
- 4. A method according to claim 1 wherein said first pressure is over 11 millitorr.
- 5. A method according to claim 4 wherein said second pressure is below 11 millitorr.
- 6. A method of depositing a metal layer on the surface of a semiconductor wafer having a periphery in a physical vapor deposition chamber comprisinga) positioning a shield adjacent to the periphery of a wafer, b) depositing said metal at a first pressure of over 11 millitorr for a time sufficient to form a conductive bridge between said shield and said wafer, c) reducing the pressure to a pressure below 11 millitorr, and d) continuing to deposit said metal at the pressure of step c) until a desired layer thickness is obtained.
- 7. A method according to claim 6 wherein the deposition step of step b) is continued for about 5-20 seconds.
- 8. A method according to claim 6 wherein the deposition step of step d) is continued for at least about 10 seconds.
- 9. A method according to claim 6 wherein said metal is W or TiW.
- 10. A method of avoiding arcing during physical vapor deposition of a metal from a target therefor onto a wafer having a periphery surrounded by a shield therefor, said shield having a lip that shadows the periphery of said wafer during said sputter deposition which comprisesa) sputter depositing said metal at a first pressure so as to form a conductive bridge between said wafer and said shield, b) reducing the pressure to a second pressure that will deposit high quality metal layers, and c) continuing to deposit said metal at said second pressure until a desired layer thickness is obtained.
- 11. A method according to claim 10 wherein said metal is W or TiW.
- 12. A method according to claim 10 wherein said conductive bridge is formed below said lip.
- 13. A method according to claim 10 wherein said first pressure is above about 11 millitorr.
- 14. A method according to claim 13 wherein said second pressure is below about 11 millitorr.
- 15. A method according to claim 10 wherein said conductive bridge is formed between the edge of said wafer and said shield.
Parent Case Info
This is a continuation of application Ser. No. 08/119,764 filed on Sep. 9, 1993, now abandoned.
US Referenced Citations (5)
Foreign Referenced Citations (2)
Number |
Date |
Country |
0145672 |
Aug 1985 |
JP |
0183961 |
Aug 1986 |
JP |
Non-Patent Literature Citations (1)
Entry |
Ku et al., “Use in X-ray Masks”, J. Vac. Sci Technol. B6(6), Nov./Dec. 1988, p. 2174-2177. |
Continuations (1)
|
Number |
Date |
Country |
Parent |
08/119764 |
Sep 1993 |
US |
Child |
08/372701 |
|
US |