Cross reference is made to commonly assigned U.S. patent application Ser. No. 09/999,475 filed Dec. 3, 2001 and entitled “Bipolar Class AB Folded Cascode Operational Amplifier for High-Speed Applications” the teachings of which are incorporated herein by reference.
The present invention is related to operational amplifiers, and more particularly to high slew rate operational amplifiers with extremely low distortion.
High speed operational amplifiers (op amps) are required to have high slew rates so that the full power bandwidth is higher and as a consequence lower distortion is achieved at higher frequencies and/or higher signal amplitudes. Unfortunately, current solutions increase full power bandwidth by sacrificing noise performance in the amplifier thus limiting the resolution of the output signal.
An example of such a solution is the widely known class AB input stage shown at 10 in
An alternative solution is shown in
This limitation calls for a new dynamically biased circuit that does not suffer from saturation during high slew signals and yet maintains low noise operation without trading off power.
The present invention achieves technical advantages as an operational amplifier having both a high slew rate and a full power bandwidth with low distortion by providing resistors in place of active loads of a differential pair of transistors in a folded cascode input stage. By utilizing passive resistors instead of active loads, no saturation occurs during high slew rate signals. The present invention achieves technical advantages of higher slew rate and lower noise without sacrificing power consumption. While more transistors are required for the operational amplifier of the present invention when compared to other architectures, there is no significant sacrifice in power consumption. This is due to the fact that dynamic bias circuit feeding the input stage does not have to be large to lower the noise at the input stage. The noise contribution of the dynamic bias stage is completely negligible with respect to the rest of the amplifier because it does not have gain from the input to the output of the operational amplifier.
An operational amplifier that does not suffer from saturation during high slew rate signals and maintains low noise operation without trading off power is shown at 30 in
The circuit 30 in
To appreciate the advantages of the present invention, the embodiment of
It is customary to introduce a resistor between the emitters of Q3, Q4, Q7 and Q8 to reduce the GM of the gain stage, and as a consequence, less capacitance is required to compensate the amplifier which results in higher slew rate. This makes the resistor a design knob for slew rate in the Class AB amplifier 10. Unfortunately, noise increases with the addition of this resistor. A similar effect can be obtained in circuit 30 by adding resistors at the emitters of Q22, Q23, Q24 and Q25. The addition of these resistors also introduces local feedback on the transistors which helps to reduce the distortion of the overall amplifier. Circuit 30 does not include these degeneration resistors because the design is targeted to low noise.
Where SR is the slew rate, Vn is the voltage noise and I is the quiescent current. It is noted these simulation results were carried in a second generation complementary bipolar process, using the same current densities for all of the transistors in the signal chain.
Table 1 depicts the performance of the various circuits in relation to circuit 30.
Advantageously, circuit 30 feedback amplifiers is introduced with the advantage of having high slew rate and low noise without sacrificing power consumption.
Though the invention has been described with respect to a specific preferred embodiment, many variations and modifications will become apparent to those skilled in the art upon reading the present application. It is therefore the intention that the appended claims be interpreted as broadly as possible in view of the prior art to include all such variations and modifications.
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5323121 | Butler | Jun 1994 | A |
5512859 | Moraveji | Apr 1996 | A |
6542032 | Escobar-Bowser et al. | Apr 2003 | B1 |
6710654 | Parkhurst et al. | Mar 2004 | B1 |
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Number | Date | Country | |
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20050128000 A1 | Jun 2005 | US |