ULTRA-FAST, SEMICONDUCTOR-BASED GENE SEQUENCING STUDY

Information

  • Research Project
  • 6388340
  • ApplicationId
    6388340
  • Core Project Number
    R21HG002167
  • Full Project Number
    5R21HG002167-02
  • Serial Number
    2167
  • FOA Number
    PA-97-45
  • Sub Project Id
  • Project Start Date
    8/1/2000 - 24 years ago
  • Project End Date
    7/31/2002 - 22 years ago
  • Program Officer Name
    SCHLOSS, JEFFERY
  • Budget Start Date
    8/1/2001 - 23 years ago
  • Budget End Date
    7/31/2002 - 22 years ago
  • Fiscal Year
    2001
  • Support Year
    2
  • Suffix
  • Award Notice Date
    7/23/2001 - 23 years ago

ULTRA-FAST, SEMICONDUCTOR-BASED GENE SEQUENCING STUDY

DESCRIPTION (Adapted from the Investigator's Abstract): The ultimate objective of this project is to exploit the emerging capabilities of deep sub-micron semiconductor technology to engineer ultra-fast, inexpensive, single molecule DNA sequencing. The basic concept was invented by Branton and Deamer in 1993 and first published in 1996. The initial implementation used a biological pore, alpha-hemolysin toxin from S. aureus in a membrane. Ions in solution were pulled through the pore of a protein channel by a voltage gradient. The ion flux (current) through the channel was measured using standard single-channel recording methods. Also in solution, and occasionally also traversing the pore but largely blocking the ionic current, were unfolded single-stranded RNA polymers. In a series of proof-of principle experiments, the strand lengths were shown to be proportional to the time the current was partially blocked. Long sequences of the same bases were shown to impede current by amounts differing with the largest and smallest bases. However, the noise and time response are such that individual bases cannot be detected with the present pore and electrode geometry. This proposal will study how capabilities just becoming possible in nanoscale semiconductor technology should make more optimized hole geometries possible. An additional advantage is that low noise detectors with greater than 10 MHz bandwidth and high gain can be placed right at the hole periphery maximizing charge and current sensitivity. The proposed device consists of a thin silicon membrane with a nanometer-sized hole. Charge passing through the hole is measured by a vertical transistor positioned along the wall of the hole via image charges in the transistor. The hole is made by standard techniques followed by narrowing via thermal or anodic oxidation. The vertical FET is built starting from a silicon-on-insulator wafer after several steps. The potential is for orders of magnitude improvements in speed, cost, and minimal pre-and post-measurement procedures compared to current sequencing techniques. The basic measurement process is at MHz rates. Even if degraded to a few 10s of thousands of bases per second, an individual's genome could be sequenced in days instead of years. If the study and initial prototyping are promising, the intent is to develop a commercial system as rapidly as funding allows.

IC Name
NATIONAL HUMAN GENOME RESEARCH INSTITUTE
  • Activity
    R21
  • Administering IC
    HG
  • Application Type
    5
  • Direct Cost Amount
  • Indirect Cost Amount
  • Total Cost
    100000
  • Sub Project Total Cost
  • ARRA Funded
  • CFDA Code
    172
  • Ed Inst. Type
  • Funding ICs
    NHGRI:100000\
  • Funding Mechanism
  • Study Section
    GNM
  • Study Section Name
    Genome Study Section
  • Organization Name
    EAGLE RESEARCH AND DEVELOPMENT, LLC
  • Organization Department
  • Organization DUNS
    025919841
  • Organization City
    BOULDER
  • Organization State
    CO
  • Organization Country
    UNITED STATES
  • Organization Zip Code
    80301
  • Organization District
    UNITED STATES