Understanding electronic transport and dynamics of quantum-dot-doped-semiconductor solids for infrared optoelectronics

Information

  • NSF Award
  • 2415101
Owner
  • Award Id
    2415101
  • Award Effective Date
    8/15/2024 - 6 months ago
  • Award Expiration Date
    7/31/2027 - 2 years from now
  • Award Amount
    $ 134,955.00
  • Award Instrument
    Continuing Grant

Understanding electronic transport and dynamics of quantum-dot-doped-semiconductor solids for infrared optoelectronics

Nontechnical Description<br/><br/>Quantum dots (QDs) are nanocrystals with optical properties that depend on their size and composition. This makes it possible to tune their absorption and emission spectra from the visible to the infrared region for desired applications. For example, quantum dots emitting precise colored light have been used as emissive layers in displays with high definition and saturated colors. However, their implementation in electronic devices is limited by poor charge transport properties. This research focuses on developing and understanding a novel hybrid system that integrates QDs into high-mobility crystalline semiconductor matrices to take advantage of their properties and create new structures with new properties for optoelectronic applications. The research team investigates the structure-property relationship of the hybrid structure to gain insight into how the two distinct components interact and what governs the spatial distribution and flow of charge carriers. Building on these insights, the goal is to develop strategies for efficient light-emitting structures in the short-wave infrared spectrum. Additionally, the project trains graduate and undergraduate students and actively engages students from underrepresented groups in STEM, offering research opportunities through the New Haven Promise Program and the Yale STARS Summer Research Program.<br/> <br/>Technical Description<br/><br/>Optical light sources in the short-wave infrared region are essential for bioimaging, medical diagnosis, machine vision, and communication. However, their integration into portable and wearable electronics is currently limited due to the complex fabrication processes required for epitaxially grown semiconductors. This study explores the potential of a novel solution-processed heterostructure—by exploiting QDs as substitutional dopants for bulk crystalline semiconductors—to manipulate the dynamics and transport of energy carriers and thereby modify the electronic and optical properties of the host material. A variety of techniques, including photoemission spectroscopy, pump-probe optical spectroscopy, and synchrotron X-ray scattering, are employed to characterize the judiciously chosen material compositions. The project aims to extend the structural versatility of the hybrid structure, elucidate the mechanisms and efficiency of carrier transfer between localized and delocalized states, and correlate the fundamental physics with the structural properties. This understanding is expected to establish the knowledge base needed for using these materials as both non-coherent and coherent light sources.<br/><br/>This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

  • Program Officer
    Paul Laneplane@nsf.gov7032922453
  • Min Amd Letter Date
    7/8/2024 - 7 months ago
  • Max Amd Letter Date
    7/8/2024 - 7 months ago
  • ARRA Amount

Institutions

  • Name
    Yale University
  • City
    NEW HAVEN
  • State
    CT
  • Country
    United States
  • Address
    150 MUNSON ST
  • Postal Code
    065113572
  • Phone Number
    2037854689

Investigators

  • First Name
    Mengxia
  • Last Name
    Liu
  • Email Address
    mengxia.liu@yale.edu
  • Start Date
    7/8/2024 12:00:00 AM

Program Element

  • Text
    ELECTRONIC/PHOTONIC MATERIALS
  • Code
    177500

Program Reference

  • Text
    Microelectronics and Semiconductors
  • Text
    Clean Energy Technology
  • Code
    8396
  • Text
    Solar Energy Capture&Conver
  • Code
    8607