1. Technical Field
The present invention relates to crystal laser material, and more particularly, to lasers operating in blue-green wavelengths.
2. Related Technology
Bulk solid-state lasers have found wide utility in applications requiring compact, frequency-agile sources.
However, many of these lasers operate at wavelengths that are quickly absorbed by water.
For these reasons, lasers that operate at wavelengths that are not as quickly absorbed in water have been sought for undersea communications and other military and commercial applications. Some previously developed solid state blue lasers are based on nonlinear frequency conversion of near infrared lasers such as Neodynium yttrium aluminum garnet (Nd:YAG or Nd:Y3Al5O12) or Titanium Sapphire (Ti:Al2O3).
Another approach to generating blue-solid state lasers is based on multi-photon pumped gain medium. These lasers absorb two or more near-infrared photons to generate a single blue photon. Usually based on excited state absorption or non-radiative upconversion, these lasers often rely on cryogenic operation or very intense pump sources to enhance the multiple excitation process. An example of multi-photon pumping in Thulium ZBLAN is described in C. P. Wyss et al., “Excitation of the thulium 1G4 level in various crystal hosts”, Journal of Luminiscence, Vol. 82, pp. 137-144, 1999. These approaches have limited efficiency and can also be somewhat complex. J. Limpert et al., “Laser oscillation in yellow and blue spectral range in Dy3+ ZBLAN”, Electronics Letters, Vol. 36. No. 16, pp. 1386-87, (August 2000) discloses a laser with ZBLAN glass fiber doped with 1000 ppm by weight Dy3+.
S. Nakamura et al., “First laser diodes fabricated from III-V nitride based materials”, Mat. Sci. & Engineering B, Vol. 43, (1997), pp. 258-264, describes current-injected InGaN multiple quantum well structure laser diodes with strong stimulated emissions at 406 nm.
In Applied Physics Letters, Vol. 94, pp. 071105 (2009), K. Okamoto et al., discloses nonpolar m-plane InGaN multiple quantum well laser diodes with lasing wavelengths of about 489.4 to 492.8 nm and about 490.5 to 499.8 nm.
In “Crystal Field in Dysprosium Garnets”, Phys. Rev., Vol. 184, No. 2, pp. 285-293, (1969), Grunberg et al. measured the infrared spectrum of dysprosium garnet, including yttrium aluminum garnet. From these measurements, Grunberg predicted the Stark energy levels of the lower lying manifolds, but did not examine the visible transitions.
U.S. Pat. No. 7,616,668 to Anh et al. discloses an optical fiber laser having host glass formed of fluoride-based glass, sulfide-based glass, or selenium-based glass doped with Dysprosium. A Dysprosium-doped fluoride fiber laser with stimulated emission in the infrared is described in S. J. Jackson, “Continuous wave 2.9 um dysprosium-doped fluoride fiber laser”, Applied Physics Letters, Vol. 83, No. 7, pp. 1316-1318, August 2003.
A Dysprosium-doped crystal laser material containing lead, gallium, and sulfur is described in U.S. Pat. No. 7,558,304 to Valer'evich Badikov et al.
A laser system includes a gain medium including a dysprosium-doped crystalline host material, and reflectors arranged on both ends of the gain medium to form a resonant cavity. The gain medium is operable to receive pump light at a wavelength that excites electrons of the Dysprosium from a ground energy level to a 4 f energy level, resulting in stimulated emission between the 4 F9/2 energy level and a 6 H energy level and an output of pulsed laser light having a wavelength of at least 480 nm.
The laser system can have a wavelength of 497 nm, 660 nm, or 570 nm. The gain medium can emit photons between the 4 F9/2 energy level and the 6 H15/2 energy level, the 4 F9/2 energy level and the 6 H13/2 energy level, or the 4 F9/2 energy level and the 6 H11/2 energy level.
The pump light can have a wavelength of between 300 and 450 nanometers. A suitable pump wavelength is 447 nm.
The host material can be Yttrium aluminum garnet or Yttrium lithium fluoride. The dysprosium dopant concentration can be at least one percent with the host material being Yttrium aluminum garnet. The dysprosium dopant concentration can be between one percent and two percent with the host material being Yttrium aluminum garnet. The dysprosium dopant concentration can be between one percent and five percent with the host material being Yttrium lithium fluoride.
A lens can focus the pump light source into the gain medium. The laser system can also include a pump light source for generating said pump light, with the pump light source being at least one laser diode or a plurality of laser diodes. The at least one laser diode can be a gallium nitride laser diode. A laser system can also include a Q switch disposed along an optical path in the resonant cavity between the gain medium and one of the reflectors. The laser system can also include a multimode fiber arranged between the pump light source and the resonant cavity to transmit the pump light to the resonant cavity.
The laser system can operate at room temperature without a cooling system, or can include a cooling system.
A method for generating laser pulses uses a gain medium including a dysprosium-doped crystalline host material and reflectors arranged at both ends of the gain medium to form a resonant cavity. The method includes exciting said gain medium with a pump light at a wavelength that excites electrons of the Dysprosium from a ground energy level to a 4 f energy level, and emitting pulsed laser light having a wavelength of at least 480 nm as the electrons transition from a 4 F9/2 to a 6 h energy level.
The pulsed laser light can have a wavelength of 497 nm, 660 nm, or 570 nm. The gain medium can emit photons between the 4 F9/2 energy level and the 6 H15/2 energy level, the 4 F9/2 energy level and the 6 H13/2 energy level, or the 4 F9/2 energy level and the 6 H11/2 energy level. The pump light can have a wavelength of between 300 and 450 nanometers. A suitable pump wavelength is 447 nm.
The host material can be Yttrium Aluminum Garnet or Yttrium lithium fluoride. The dysprosium dopant concentration can be at least one percent with the host material being Yttrium aluminum garnet. The dysprosium dopant concentration can be at least between one percent and two percent, with the host material being Yttrium aluminum garnet. The dysprosium dopant concentration can be between one percent and five percent, with the host material being Yttrium lithium fluoride.
The method can also include focusing the pump light source into the gain medium. A pump light source can be at least one laser diode, a plurality of laser diodes, and a suitable laser diode is a gallium nitride laser diode. Q-switching within the resonant cavity can produce short laser pulses.
A method for communications includes generating a series of laser pulses, encoding a communication signal on the laser pulses, and transmitting the encoded laser pulses from a source to a receiver. The laser pulses are generated with a gain medium including a dysprosium-doped crystalline host material and reflectors arranged at both ends of the gain medium to form a resonant cavity, and includes exciting said gain medium with a pump light at a wavelength that excites electrons of the Dysprosium from a ground energy level to a 4 f energy level, and emitting pulsed laser light having a wavelength of at least 480 nm as the electrons transition from a 4 F9/2 to a 6 H energy level. One or both of the source and the receiver can be underwater.
A method for determining a range to a object includes generating laser pulses, transmitting the pulses toward the object, receiving reflected pulses from the object, and determining the range based on the time interval between transmitting the pulses and receiving the reflected pulses. The laser pulses are generated with a gain medium including a dysprosium-doped crystalline host material and reflectors arranged at both ends of the gain medium to form a resonant cavity, and includes exciting said gain medium with a pump light at a wavelength that excites electrons of the Dysprosium from a ground energy level to a 4 f energy level, and emitting pulsed laser light having a wavelength of at least 480 nm as the electrons transition from a 4 F9/2 to a 6 H energy level. The object can be underwater.
Additional details will be apparent from the following detailed description of embodiments of the invention.
Embodiments of the invention are directed to a compact and practical laser source suitable for use in underwater applications operating in the 450 to 500 nm primary transmission window of water.
An embodiment of the invention is a laser system that includes a gain medium of a nonlinear crystal doped with trivalent Dysprosium (Dy3+).
The gain medium can be Dy3+ doped Yttrium aluminum garnet (YAG or Y3Al5O12) or Yttrium lithium fluoride (YLF or LiYF4). The Dy:YAG or Dy:YLF gain medium can be pumped by a laser diode in the blue-ultraviolet (UV) wavelengths.
The absorption spectra can be studied using a Cary 550 spectrophotometer and a Nicolet 760 FTIR spectrometer, with the fluorescence spectra being acquired using a 0.25 nm resolution Ocean HR 4000 spectrometer. Steady state excitation is generated using a filtered mercury vapor lamp. Pulsed excitation of the samples is accomplished either with a GaN light emitting diode (LED) array or an Ocean PX2 flashlamp. Fluorescent decay waveforms are measured with a narrowband filtered silicon detector and recorded on a Techtronic 714 oscilloscope.
Results of these studies are shown in
The Dy:YLF plot 41 shows that the Dy:YLF absorption cross section varies between 0 and about 1.1×10−21 cm2 over the wavelength range of 300 to 500 nm. The Dy:YAG plot 43 shows that the absorption cross section varies between 0 and about 10×10−21 cm2. Both crystals have broad absorption bands between 300 nm and 400 nm. Note that the absorption cross sections of the Dy:YAG are generally larger than the absorption cross sections of the Dy:YLF.
The strength of the near-UV absorption depends on the dysprosium host material. Dy:YAG exhibits stronger absorption per ion than Dy:YLF in the 370 nm-400 nm band where the laser can be pumped. For modest doping densities of approximately 1020 ions per cm3, near-UV absorption lengths will be centimeter scale in Dy:YAG.
The spectral measurements show that the Dy3+6 H15/2 ground state manifold in Dy:YAG have a Stark splitting of 743 cm−1. This result is significantly higher than the value reported by Azamatov, but consisted with the early near-IR work of Grunberg. As a result, the population inversion of the 497 nm transition requires less than 2% Dy3+ excitation at room temperature. Dysprosium laser action on the 4 F9/2 to 6 H15/2 transition can proceed in a quasi-three level laser configuration. (The invention disclosure says Stark splitting occurs at 743 cm−1, the slides say 739 cm−1, and the
Note that the higher Dy3+ dopant concentration in the Dy:YLF crystal is intended to offset the weaker UV absorption cross section of the Dy:YLF apparent in
The near UV beam emitted by the GaN diode 75 is captured and focused by a fast lens 64 into the Dysprosium-doped crystal gain medium 71 within the resonant cavity 70. The near-UV beam will be absorbed into the Dysprosium-doped crystal. Gain generated in the crystal results in stimulated emission within the cavity defined by the reflectors 72 and 73. Blue dysprosium laser emission 66 couples out through the partially reflective mirror 73.
The reflectors 72 and 73 arranged at either end of the Dy:YAG crystal 71 are reflective in the wavelengths at which the gain medium lases. The reflector 73 can be partially reflective in these wavelengths to allow the stimulated emission to exit the resonator cavity. The output of the laser cavity 70 will be laser pulses at the blue lasing wavelength of 490 nm. Alternatively, both reflectors 72 and 73 can be highly reflective and a beamsplitter (not shown) can be arranged in the optical path between the reflectors.
The reflectors can be separate elements spaced apart from the ends of the crystal, or can be reflective coatings on the ends of the crystal.
For systems in which the reflectors are not coatings on the faces of the crystal gain medium, antireflective coatings can be provided on the crystal to minimize back-reflections.
The cavity length, mirror curvature, and crystal rod position can be adjusted to match the pump spot to the TEM00 mode.
The gain medium is pumped in the wavelength range in which the doped crystal is absorptive. The pump energy can provided by a laser diode 75 operating in the near ultraviolet wavelengths, and preferably between about 320 nm and 450 nm in wavelength. In this example, the GaN laser diode operates at 387 nm, which corresponds to a peak in the crystal's absorption cross section. This pump wavelength can provide good single pass pump coupling.
There are some important differences between optical pumping with GaN laser diodes and pumping with near-IR sources. The shorter wavelengths of the GaN laser diodes lead to higher intrinsic brightness. The larger bandgaps result in higher operating voltages, e.g., 5-6 Volts, as well as weaker temperature tuning rates, e.g., 50-60 pm/deg C. The GaN laser diodes also have impressive wavelength agility over the range of 320-500 nm.
Although a single laser diode is shown in the example of
One source for a GaN laser diode operating in the 395-450 nm wavelength range is Nichia Chemical Industries, headquartered in Tokushima, Japan. Other manufacturers of GaN laser diodes include Sony, Sharp, and Sanyo. Nichia manufactures a suitable GaN laser diode that produces 0.6 Watts at 403 nm, and a laser diode that produces about one Watt at 447 nm, which correspond to a strong absorption band Dy:YAG and Dy:YLF. A Q-switch can be arranged in the resonant cavity between one of the reflectors and the crystal. The Q-switch can be, for example, an acousto-optic modulator or an electro-optic modulator. Because of the relatively long energy storage of Dy:YAG and Dy:YLF, Q-switching can produce high power short pulses with lengths in the nanosecond or shorter range.
The absorption coefficient of the crystal is 0.99 cm−1. The laser wavelength is 497 nm. The mode volume is 0.04×2 cm. The cavity length, mirror curvature, and rod position are adjusted to match the pump spot to the TEM00 mode. The resonator length is 90 cm. The minor curvature is 70 cm. The Dy3+ density is 2.76×1020 cm3. The storage lifetime is 870 microseconds. The Dy3+ 6 H15/2 levels are 0 cm−1, 65 cm−1, 100 cm−1, 177 cm−1, 232 cm−1, 456 cm−1, 662 cm−1, and 739 cm−1. The Dy3+ 4 H9/2 levels are 20868 cm−1, 20899 cm−1, 20960 cm−1, and 21128 cm−1.
As shown in
The spectral data described above is incorporated into a model for a diode pumped blue laser. Simulation of a model of this system uses several assumptions. First, a Dy:YAG crystal is selected based on its stronger blue emission and higher Stark splitting. The system is operated at room temperature of 293 K. The cavity losses are assumed to be dominated by a transmission output coupler (e.g., the partially reflective minor 72 of
Multiple laser diodes are focused with a 400 micron diameter spot size into a single end-pumped 2% Dy:YAG rod that is 2 cm in length. The model assumes cw pumping with high repetition rate Q-switching.
For a pump laser with 100 W of pump power, and with pump coupling assumed to be 86%, the optimal average power is predicted to be 25 W with a 2 kHz repetition rate. The signal gain is 0.38 cm−1. Optical efficiency is projected at 25% with a significant threshold power of 17 W. Thus, assuming a 50 ns Q-switched laser pulse, the laser can support a megawatt peak power application.
The Dy3+:YAG and Dy3+:YLF laser systems described herein can operate at room temperature, however, cooling the gain medium can improve its performance. For example, thermal occupation of the terminal level of the 497 nm laser in Dy:YAG is estimated to be 1.9% at room temperature. This leads to a requirement for high power pumping. However, if the laser material is cooled to 200K, the terminal level occupation drops to 0.3%, allowing construction of efficient systems with 10 W of pump power. Alternatively, the Dy+ host can be a different material having higher field splitting.
Other host materials than YAG and YLF crystals can be used to host the active Dysprosium ions. The concentration and host will determine the frequency of the laser's emission peak.
Other geometries for the laser include ribs, disks, slabs, and fibers. This system can also be operable with single or tunable frequencies, steady-state or pulsed operation with stable or unstable resonators.
The lasers described herein can also be configured as oscillators or amplifiers.
The laser system can be used for communication. In operation, the laser generates a series of laser pulses with a wavelength of 490 nm, a signal is encoded on the laser pulses, and the encoded laser pulses are transmitted from the source to a receiver. One or both of the source or receiver can also be underwater in fresh water or seawater.
The laser system can also be configured for rangefinding. The laser pulses are transmitted toward an object, and reflected pulses from the object are received at a receiver. The distance to the object can be determined based on the time interval between the time a pulse is transmitted and the time the reflected pulse is received.
The invention has been described with reference to certain preferred embodiments. It will be understood, however, that the invention is not limited to the preferred embodiments discussed above, and that modification and variations are possible within the scope of the appended claims.
This application is a continuation of U.S. application Ser. No. 12/964,599, filed on Dec. 9, 2010, which is a nonprovisional of provisional (35 USC 119(e)) application 61/267,863 filed on Dec. 9, 2009. The entire disclosure of each of these documents is incorporated herein by reference.
Number | Date | Country | |
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61267863 | Dec 2009 | US |
Number | Date | Country | |
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Parent | 12964599 | Dec 2010 | US |
Child | 14627938 | US |