Referring in detail to the drawings where similar parts are identified by like reference numerals, and, more particularly to
A differential gain cell 20 comprises two nominally identical circuit halves 20A, 20B. When biased, with a DC potential, from, for example, a DC current source 24, and stimulated with a differential mode signal, comprising even and odd mode components of equal amplitude and opposite phase (Si+1 and Si−1) 30, 32, a virtual ground is established at the symmetrical axis 26 of the two circuit halves. At the virtual ground, the potential at the operating frequency does not change with time regardless of the amplitude of the stimulating signal. The quality of the virtual ground of a balanced device is independent of the physical ground path and, therefore, balanced or differential circuits can tolerate poor RF grounding better than circuits operated with single ended (ground referenced) signals. Differential devices can also typically operate with lower signal power and at higher data rates than single ended devices and have good immunity to noise, including noise at even-harmonic frequencies, from external sources such as adjacent conductors.
However, the response of integrated circuits, including differential amplifiers, to high frequency signals is typically frequency dependent. Integrated circuits are fabricated by depositing layers of conductive, semi-conductive and insulating materials on a semi-conductive substrate and inherent frequency dependent connections commonly exist between various elements of the circuit components and between the various elements of the circuit components and the substrate on which the circuit's components are fabricated. One such inherent frequency dependent connection comprises a capacitive connection of the gates and drains of MOS transistors and the bases and collectors of bipolar junction (BJT) transistors. For example, an intrinsic parasitic capacitance (Cgd) 42 interconnects the gate and the drain of a typical MOS transistor because the drain dopant diffuses under the oxide comprising the transistor's gate. As the frequency of the stimulating signal increases, the impedance of the interconnection of the gate and the drain of the transistor and, therefore, the input impedance of the differential gain cell changes. Moreover, due to the gain of the transistor, any change in voltage at the gate of the transistor is amplified at the drain of the transistor causing the parasitic capacitance (Cgd) to appear to be a much larger capacitor; a phenomenon known as the Miller effect.
The parasitic gate-to-drain capacitance is only one source of frequency dependent variability in the operation of a differential amplifier. As a result of the fabrication of closely spaced circuit components on a semi-conductive substrate, parasitic capacitance (Cds) 42 connects the source terminals to the drain terminals of MOS transistors (collector and emitters of BJTs); parasitic capacitance Cgg 44 connects the gate terminals of the two transistors, the input terminals of the amplifier; and Cdd 46 connects the drain terminals of the transistors, the amplifier's outputs. These inherent capacitive parasitic interconnections in the integrated circuit contribute additional frequency dependent variability to the output signal of the amplifier. The inventors recognized that the respective input signals and the respective output signals of the differential amplifier comprise mirror image signal components of substantially equal amplitude and opposite phase. The inventors concluded that the effect of the parasitic capacitance connecting the terminals of the transistors of a differential amplifier could be substantially reduced or eliminated by connecting each conductor of an amplifier input signal component to the respective conductor of the output signal component of opposite phase.
Referring to
Inherent in the structure of the transistors 20A, 20B is parasitic capacitance (Cgd) 40, 41 interconnecting the respective gate 30 and drain 32 of each transistor. The gates and drains of the two transistors comprise, respectively, the input terminals and the output terminals of the amplifier. Due the gain (A) of the transistor, a change in voltage (dV) at the gate of a transistor is amplified at the drain (A*dV) causing the opposing sides of the parasitic capacitance to experience differing voltage. As a result of a phenomenon known as the Miller effect, the parasitic capacitance (Cgd) has the effect of a larger capacitor causing the input impedance of the differential amplifier to vary substantially with frequency and producing substantial frequency dependent variability in the output signal of the amplifier.
In addition, inherent parasitic capacitance, (Cds) 42, 43 connects the respective sources and drains of the two transistors, producing a frequency variable conductive path between the amplifier's outputs and the conductor through which the transistors are biased. Likewise, parasitic capacitance (Cgg) 44 connects the gate terminals, the amplifier's inputs; and parasitic capacitance, Cdd, 46 connects drain terminals of the transistors, the differential amplifier's outputs. These capacitive parasitic interconnections of the terminals of the transistors produce additional frequency dependent variability in the impedance of the differential amplifier and, therefore, additional frequency dependent variability in the amplifier's performance.
To reduce or eliminate the effect of the inherent parasitic capacitance in the transistors of the differential amplifier and provide a more stable amplifier with a more linear response, compensating capacitors 52 and 54 are connected from the gate of each transistor, for example the gate of transistor 20A, to the drain of the second transistor of the differential gain cell, for example the drain of transistor 20B, connecting each conductor of an input signal component to the respective conductor of the output signal component of opposite phase. Since the transistors of the differential gain cell are matched and the phase of the differential input signal component Si+1 is displaced 180° from the phase of the differential output signal component So−1, the change in voltage at the drain of a transistor due to the parasitic capacitance, is offset by the voltage at the respective compensating capacitor 52, 54 and the input impedance of the test structure remains more constant with frequency. The Miller effect produces substantial variability in the output of the amplifier and can be countered with compensating capacitors having capacitances substantially equal to the parasitic input to output (source to drain) capacitance (Cgd). The effects of input signal frequency on amplifier output can be further reduced by providing compensating capacitance substantially equaling the capacitance of the parasitic input to output (source to drain) capacitance (Cgd) and the capacitance, Cds, Cgg or Cdd, of one more of the parasitic interconnections of the terminals of the transistors. The compensating capacitors preferably have values equal to the combined parasitic capacitances, Cgd, Cds, Cgg and Cdd to offset the Miller effect and the effects of the parasitic capacitances connecting the terminals of the transistors of the differential amplifier.
Since the magnitude of the capacitance of the parasitic interconnections in the transistors may not be known with precision, the capacitance of the compensating capacitors may be adjustable. Adjustment may be accomplished mechanically or electronically, through a varactor or otherwise, or by trimming a fixed capacitor in the integrated circuit.
Integrated circuit-based amplifiers constructed with other types of transistors also experience input signal frequency dependent instability and non-linearity. Referring to
The linearity and stability of a differential amplifier is improved by interconnecting each input of the amplifier to the respective output conducting the output signal of opposite phase with compensating capacitors having a capacitance substantially equal to the parasitic capacitances of the transistors of the amplifier.
The detailed description, above, sets forth numerous specific details to provide a thorough understanding of the present invention. However, those skilled in the art will appreciate that the present invention may be practiced without these specific details. In other instances, well known methods, procedures, components, and circuitry have not been described in detail to avoid obscuring the present invention.
All the references cited herein are incorporated by reference.
The terms and expressions that have been employed in the foregoing specification are used as terms of description and not of limitation, and there is no intention, in the use of such terms and expressions, of excluding equivalents of the features shown and described or portions thereof, it being recognized that the scope of the invention is defined and limited only by the claims that follow.
This application claims the benefit of U.S. Provisional Application No. 60/830,877, filed Jul. 14, 2006.
Number | Date | Country | |
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60830877 | Jul 2006 | US |