Claims
- 1. An upconversion luminescence material of the general formula (X):(Y), wherein (X) is a host and (Y) is at least one dopant, wherein the at least one dopant is capable of increasing the luminescence intensity or quantum efficiency of the host.
- 2. The upconversion luminescence material of claim 1, wherein the host is selected from the group consisting of nanoparticles and bulk materials.
- 3. The upconversion luminescence material of claim 1, wherein the host is a nanoparticle.
- 4. The upconversion luminescence material of claim 3, wherein the nanoparticle is selected from the group consisting of semiconducting nanoparticles, insulating nanoparticles, conducting nanoparticles, and combinations thereof.
- 5. The upconversion luminescence material of claim 4, wherein the semiconductor nanoparticle is selected from the group consisting of sulfide, telluride, selenide, and oxide semiconductors and their nanoparticles.
- 6. The upconversion luminescence material of claim 5, wherein the semiconductor nanoparticle is selected from the group consisting of Zn1-xSy, Zn1-xSey, Zn1-xTey, Cd1-xSy, Cd1-xSey, Cd1-xTey, Pb1-xSy, Pb1-xSey, Pb1-xTey, Mg1-xSy, Ca1-xSy, Ba1-xSy and Sr1-xsy, wherein 0<x≦1, 0<y≦1.
- 7. The upconversion luminescence material of claim 6, wherein the semiconductor nanoparticle is ZnS.
- 8. The upconversion luminescence material of claim 5, wherein the semiconductor nanoparticle is represented by the general formula (M1-zNz)1-xA1-yBy, wherein M=Zn, Cd, Pb, Ca, Ba, Sr, Mg; N=Zn, Cd, Pb, Ca, Ba, Sr, Mg; A=S, Se, Te, O; B=S, Se, Te, O; 0<x≦1, 0<y≦1, 0<z≦1).
- 9. The upconversion luminescence material of claim 8, wherein the semiconductor nanoparticle is Zn0.4Cd0.4S.
- 10. The upconversion luminescence material of claim 8, wherein the semiconductor nanoparticle is Zn0.9S0.8Se0.2.
- 11. The upconversion luminescence material of claim 1, wherein the at least one dopant is a rare earth ion.
- 12. The upconversion luminescence material of claim 1, wherein the at least one dopant is selected from the group consisting of Eu3+, Tb3+, Ce3+, Er3+ and combinations thereof.
- 13. The upconversion luminescence material of claim 1, wherein the at least one dopant is Mn2+ or Cu+.
- 14. The upconversion luminescence material of claim 1, wherein the dopant is a transition metal ion.
- 15. The upconversion luminescence material of claim 14, wherein the transition metal ion is selected from the group consisting of Mn2+, Cu2+, Cu+, Ag+, Cr3+, and combinations thereof.
- 16. The upconversion luminescence material of claim 1, wherein the at least one dopant is selected from the group consisting of transition ions, rare earth ions, and combinations thereof.
- 17. The upconversion luminescence material of claim 1, wherein the upconversion luminescence material is selected from the group consisting of sulfide, telluride, selenide and oxide semiconductors, their nanoparticles, such as ZnS:Mn,Er; ZnSe:Mn,Er; MgS:Mn,ER; CaS:Mn,Er; ZnS:Mn,Yb; ZnSe:Mn,Yb; MgS:Mn,Yb; CaS:Mn,Yb etc., and their complex compounds: (M1-zNz)1-x(MnqR1-q)xA1-yBy, wherein M=Zn, Cd, Pb, Ca, Ba, Sr, Mg; N=Zn, Cd, Pb, Ca, Ba, Sr, Mg; A=S, Se, Te, O; B=S, Se, Te, O; R=at least one rare earth ion, 0<x≦1, 0<y≦1, 0<z1, 0<q≦1).
- 18. The upconversion luminescence material of claim 1, wherein the upconversion luminescence material is ZnS:Mn2+.
- 19. The upconversion luminescence material of claim 11 wherein the upconversion luminescence material is encapsulated into a zeolite.
- 20. The upconversion luminescence material of claim 19, wherein the zeolite is zeolite-USY.
- 21. The upconversion luminescence material of claim 20, wherein the upconversion luminescence material is ZnS:Mn2+/zeolite-USY.
- 22. The upconversion luminescence material of claim 1, wherein the upconversion luminescence material has a form of at least one crystal.
- 23. The upconversion luminescence material of claim 1, wherein the upconversion luminescence material has a form of a powder.
- 24. The upconversion luminescence material of claim 1, wherein the upconversion luminescence material has a form of a nanoparticle.
- 25. The upconversion luminescence material of claim 1 wherein the upconversion luminescence material is a solid.
- 26. The upconversion luminescence material of claim 1 wherein the upconversion luminescence material is a powder.
- 27. The upconversion luminescence material of claim 1, wherein upconversion luminescence material is a film o r thin film .
- 28. The upconversion luminescence material of claim 1, wherein the upconversion luminescence material is a colloidal solution.
- 29. An upconversion luminescence material wherein the upconversion luminescence material has an excitation wavelength that is longer than the emission wavelength.
- 30. The upconversion luminescence material of claim 29, wherein the excitation wavelength is from 400 nm to 5000 nm and the emission wavelength is from about 200 nm to about 2000 nm.
- 31. An upconversion luminescence production assembly, comprising:
an electromagnetic source emitting an excitation having an excitation wavelength; a substrate positioned within the excitation emitted by the electromagnetic source; and a UCL material operably associated with at least a portion of the substrate such that the excitation emitted by the electromagnetic source is received by at least a portion of the UCL material, the UCL material producing an emission through upconversion luminescence having an emission wavelength shorter than the excitation wavelength of the excitation received by the UCL material.
- 32. The upconversion luminescence production assembly of claim 31, wherein the electromagnetic source is an infrared electromagnetic source.
- 33. The upconversion luminescence production assembly of claim 32, wherein the wavelength of the light produced by the UCL material is in a range between about 200 nm to about 2000 nanometers.
- 34. The upconversion luminescence production assembly of claim 31, wherein the UCL material is formed of semiconductor nanoparticles.
- 35. The upconversion luminescence production assembly of claim 34, wherein the semiconductor nanoparticles are doped with manganese.
- 36. The upconversion luminescence production assembly of claim 35, wherein the semiconductor nanoparticles are manganese and rare earth-ion co-doped semiconductors.
- 37. The upconversion luminescence production assembly of claim 31, wherein the light received by the UCL material has a power density less than 100 mJ/cm2.
- 38. The upconversion luminescence production assembly of claim 37, wherein the UCL material is constructed of a material capable of producing light detectable by a human eye when the light received by the UCL material has a power density of about 1 mJ/cm2.
- 39. The upconversion luminescence production assembly of claim 37, wherein the UCL material is constructed of a material capable of producing light when the light received by the UCL material has a power density of less than 1 mJ/cm2.
- 40. The upconversion luminescence production assembly of claim 39, wherein the UCL material is formed of semiconductor nanoparticles.
- 41. The upconversion luminescence production assembly of claim 40, wherein the semiconductor nanoparticles are doped with manganese.
- 42. The upconversion luminescence production assembly of claim 41, wherein the substrate is constructed of a material allowing passage of at least one of the excitation and the emission without substantial scattering.
- 43. The upconversion luminescence production assembly of claim 42, wherein the substrate is constructed of an optically transparent material selected from the group consisting of quartz, glass, natural or synthetic polymers, gaseous materials, and combinations thereof.
- 44. The upconversion luminescence production assembly of claim 42, wherein the substrate is positioned between the electromagnetic source and the UCL material such that the excitation passes through at least a portion of the substrate.
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application claims priority under 35 U.S.C. § 119(e) of U.S. Provisional Application Serial No. 60/296, 333 filed Jun. 6, 2001 and entitled “UPCONVERSION OF Mn-DOPED SEMICONDUCTOR NANOPARTICLES”, the contents of which are expressly incorporated herein by reference in their entirety.
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT
[0002] The government may own certain rights in and to this application pursuant to: (i) a grant from the National Science Foundation Grant No. DMI-0060254, and (ii) an Air Force Office of Scientific Research Contract No. F49620-00-C-0058.
Provisional Applications (1)
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Number |
Date |
Country |
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60296333 |
Jun 2001 |
US |