The embodiments described herein are generally related to capacitive switches and, more particularly, to capacitive micro switches and methods to design capacitive micro switches using contact micro structures to control capacitance level.
To fabricate traditional micro-electro-mechanical capacitance switches for lower power (less than 1 W) radio frequency applications, the area and the thickness of the dielectric film in the Metal-Insulator-Metal (MIM) configuration are varied to control the capacitance values. Changing the dielectric thickness apparently has benefit in manufacturing uniformity. However, in applications with radio frequency power much higher than 1 W, the dielectric material has strict thickness requirements in order to prevent breakdown failure during switching and the “on” state. Another option is to vary the area of both contact plates. For high capacitance values, it is difficult to maintain a homogeneous contact with relatively large contact surface area (over 10 mm2) during mass production. For low to medium capacitance, variable surface areas require manufacturing of contact plates at assorted sizes, which brings extra design and fabrication constraints for high power radio frequency applications.
The embodiments provided herein introduce methods of design and manufacture of micro structures for micro capacitive switches of different capacitance with the same plate size for high power application. The embodiments also provide micro-structured plates for precision capacitance control of micro mechanical capacitive switches. The capacitance value can be changed by varying the number and the contact structures, such as micro posts and micro periodic structures.
Micro-structures patterned on a rigid plate can easily manipulate the resulting capacitance across a large range, which is a unique feature for mass production of capacitor switches at different nominal capacitance. Continuous, periodic micro-structures can significantly increase the maximum capacitance value within limited real estate on the contact plates. Discrete micro posts with variable geometries can prevent unwanted coupling and aid heat dissipation during high power operation.
Micro structures of different cross-sectional shapes can be fabricated uniformly above the contact surfaces of both capacitor plates. The geometric properties, including but not limited to, height, cross-section and gap, of the micro structures are varied to adjust capacitance value and optimize capacitor switch performance for low to high radio frequency electric power. The overall contact area of the micro structures determines the capacitance at the contact of both plates.
The embodiments provided herein have utility in the area of the telecommunication, radar and satellite systems, such as phase shifters, diversity antennas, resonators, line switches, attenuators, isolators, and tuning circuits. On average, tens to hundreds of capacitive switches are needed to accomplish programmable radio frequency circuits. Micro switches with uniform footprint are best suitable for integration on radio frequency boards. These embodiments are also applicable to radio frequency phase shifters, antenna switches and power amplifiers that are critical components for the telecommunication industry.
Other systems, methods, features and advantages of the invention will be or will become apparent to one with skill in the art upon examination of the following figures and detailed description.
The details of the invention, including fabrication, structure and operation, may be gleaned in part by study of the accompanying figures, in which like reference numerals refer to like parts. The components in the figures are not necessarily to scale, emphasis instead being placed upon illustrating the principles of the invention. Moreover, all illustrations are intended to convey concepts, where relative sizes, shapes and other detailed attributes may be illustrated schematically rather than literally or precisely.
The embodiments provided herein are directed to micro capacitive switches and a method of manufacturing micro capacitive switches at variable nominal capacitance value using micro-structures on the contact plates of the same dimension. Micro-structures patterned on a rigid plate can easily manipulate the resulting capacitance across a large range, which is a unique feature for mass production of capacitor switches at different nominal capacitance. Continuous, periodic micro-structures can significantly increase the maximum capacitance value within limited real estate on the contact plates. Discrete micro posts with variable geometries can prevent unwanted coupling and aid heat dissipation during high power operation.
Micro structures of different cross-sectional shapes can be fabricated uniformly above the contact surfaces of both capacitor plates. The geometric properties, including but not limited to, height, cross-section and gap, of the micro structures are varied to adjust capacitance value and optimize capacitor switch performance for low to high radio frequency electric power. The overall contact area of the micro structures determines the capacitance at contact of both plates.
In the preferred embodiment, a separately manufactured contact plate can be mounted to a movable magnet in order to be actuated to an “on” and an “off” state of the capacitive switch. Depending on the contact plate's surface condition, variable contact capacitance at the “on” state can be precisely specified by geometrical properties of the micro-structures on the surface, such as the density, size and depth.
Turning in detail to the figures,
While the invention is susceptible to various modifications, and alternative forms, specific examples thereof have been shown in the drawings and are herein described in detail. It should be understood, however, that the invention is not to be limited to the particular forms or methods disclosed, but to the contrary, the invention is to cover all modifications, equivalents and alternatives falling within the spirit and scope of the appended claims.
In the foregoing specification, the invention has been described with reference to specific embodiments thereof. It will, however, be evident that various modifications and changes may be made thereto without departing from the broader spirit and scope of the invention. For example, the reader is to understand that the specific ordering and combination of process actions described herein is merely illustrative, unless otherwise stated, and the invention can be performed using different or additional process actions or a different combination or ordering of process actions. As another example, each feature of one embodiment can be mixed and matched with other features shown in other embodiments. Features and processes known to those of ordinary skill may similarly be incorporated as desired. Additionally and obviously, features may be added or subtracted as desired. Accordingly, the invention is not to be restricted except in light of the attached claims and their equivalents.
This application claims the benefit of U.S. Provisional Application No. 61/473,976, filed Apr. 11, 2011, which application is incorporated herein by reference.
Number | Name | Date | Kind |
---|---|---|---|
6100477 | Randall et al. | Aug 2000 | A |
6608268 | Goldsmith | Aug 2003 | B1 |
6621387 | Hopcroft | Sep 2003 | B1 |
6717496 | Feng et al. | Apr 2004 | B2 |
6777765 | Chen et al. | Aug 2004 | B2 |
6919784 | Feng et al. | Jul 2005 | B2 |
6960971 | Park et al. | Nov 2005 | B2 |
6985058 | D'Amico et al. | Jan 2006 | B2 |
7015780 | Bernstein et al. | Mar 2006 | B2 |
7126495 | Netzer | Oct 2006 | B2 |
7142076 | Feng et al. | Nov 2006 | B2 |
7256670 | Jahnes et al. | Aug 2007 | B2 |
7381583 | Ebel et al. | Jun 2008 | B1 |
7834722 | Millet | Nov 2010 | B2 |
7858423 | Siamak | Dec 2010 | B2 |
8115577 | Nakatsuka et al. | Feb 2012 | B2 |
8203402 | Steeneken et al. | Jun 2012 | B2 |
20030146079 | Goldsmith | Aug 2003 | A1 |
20040113727 | Kawai | Jun 2004 | A1 |
20060091983 | Robert | May 2006 | A1 |
20070256917 | Oberhammer et al. | Nov 2007 | A1 |
20080297980 | Bourcier | Dec 2008 | A1 |
20090050356 | Hsu | Feb 2009 | A1 |
20090211885 | Steeneken et al. | Aug 2009 | A1 |
20090296307 | Siamak | Dec 2009 | A1 |
20120073940 | Masunishi et al. | Mar 2012 | A1 |
20120103768 | Bachman et al. | May 2012 | A1 |
Number | Date | Country | |
---|---|---|---|
20120279845 A1 | Nov 2012 | US |
Number | Date | Country | |
---|---|---|---|
61473976 | Apr 2011 | US |