Claims
- 1. A process for preparing a crystalline oxide material comprising forming a crystallization mixture comprising a source of one or more oxides capable of being tetrahedrally coordinated, said crystallization mixture further comprising a poly-nuclear oxometalate, said crystallization mixture further comprising water and a water immissible organic solvent, whereby said crystallization mixture has two-distinct liquid phases, one of said liquid phases being an organic phase and the other of said liquid phases being an aqueous phase, said process further comprising maintaining said crystallization mixture under conditions sufficient to form crystals of said crystalline oxide material, wherein, at the start of the crystallization, either a source of said oxide which is capable of being tetrahedrally coordinated or said poly-nuclear oxometalate is dissolved in said organic phase, said crystalline oxide material having a composition comprising oxides from said source of one or more oxides and oxides from said poly-nuclear oxometalate.
- 2. A process according to claim 1, wherein said source of one or more oxides capable of being tetrahedrally coordinated is a source of an oxide of Si, Al, P, B, Ge, Ga or mixtures thereof.
- 3. A process according to claim 1, wherein said poly-nuclear oxometalate is composed of at least 3 edge or corner-sharing metal-oxygen tetrahedra, octahedra or mixtures thereof.
- 4. A process according to claim 1, wherein said poly-nuclear oxometalate is selected from the group consisting of PW.sub.12 O.sub.40.sup.3-, W.sub.6 O.sub.19.sup.2- and Al.sub.13 O.sub.4 (OH).sub.24 (H.sub.2 O).sub.12.sup.7+.
- 5. A process according to claim 1, wherein said crystallization mixture comprises H.sub.3 PO.sub.4, Al.sub.2 O.sub.3, NaOH, H.sub.3 PW.sub.12 O.sub.40, Si(OC.sub.2 H.sub.5).sub.4 and 1-hexanol, whereby the crystalline oxide material which is obtained has the X-ray diffraction pattern set forth in Table 1.
- 6. A process according to claim 1, wherein said crystallization mixture comprises NH.sub.4 H.sub.2 PO.sub.4, tetraethylammonium hydroxide, NH.sub.4 OH, H.sub.3 PW.sub.12 O.sub.40, Si(OC.sub.2 H.sub.5).sub.4, and 1-hexanol, whereby the crystalline oxide material which is obtained has the X-ray diffraction pattern set forth in Table 2.
CROSS-REFERENCE TO RELATED APPLICATIONS
This application is a continuation-in-part of copending U.S. Application Ser. No. 008,060, filed Jan. 14, 1987, now abandoned, which is a continuation of U.S. Application Ser. No. 816,089, filed Jan. 3, 1986, now abandoned.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
4647442 |
Derouane et al. |
Mar 1987 |
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4744970 |
Lok et al. |
May 1988 |
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Continuations (1)
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Number |
Date |
Country |
Parent |
816089 |
Jan 1986 |
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Continuation in Parts (1)
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Number |
Date |
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Parent |
8060 |
Jan 1987 |
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