Claims
- 1. A process for making a liquid crystal display monolithically formed on a metal insulator semiconductor integrated circuit comprising:
- forming a first insulating layer over said integrated circuit;
- forming a polycrystalline silicon layer over said first insulating layer;
- smoothing the top surface of said silicon layer;
- forming a second insulating layer over said silicon layer and thereafter defining openings in said second insulating layer over portions of said silicon layer which are to be removed;
- etching said silicon layer using said second insulating layer as a mask so as to form islands in said silicon layer and contact openings therethrough;
- forming a third insulating layer which covers at least those surfaces of said silicon layer which were exposed during said etching step;
- forming contact openings through said first and third insulating layers in registration with said contact openings through said silicon layer;
- forming pixel control electrodes over each of said silicon islands; and
- placing a liquid crystal layer over said electrodes.
- 2. A process for making a liquid crystal display, monolithically formed with an integrated circuit, comprising:
- placing a polycrystalline silicon layer over said integrated circuit, surface smoothing said polycrystalline silicon layer and dividing it into islands;
- insulating each of said silicon islands;
- placing pixel control electrodes over each of said silicon islands; and
- forming a liquid crystal layer over said electrodes.
- 3. The method of claim 2 further comprising providing conductive means between each of said electrodes and selected elements of said integrated circuit.
- 4. The method of claim 3 wherein said providing step comprises placing dopant impurities in said silicon layer.
- 5. The method of claim 4 wherein said placing step comprises:
- forming an insulating layer over said silicon layer;
- forming openings in said insulating layer to expose portions of said silicon layer which are in vertical registration with said integrated circuit elements to which connection is to be made; and
- injecting dopant impurities through said openings so that portions of said silicon layer underlying said openings are rendered conductive.
- 6. The method of claim 5 wherein said injecting step comprises ion implanting said dopant impurities.
Parent Case Info
This is a division of application Ser. No. 209,455, filed Nov. 24, 1980 now U.S. Pat. No. 4,382,658.
US Referenced Citations (4)
Divisions (1)
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Number |
Date |
Country |
Parent |
209455 |
Nov 1980 |
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