Claims
- 1. The mehtod of forming a high performance PN semiconductor device comprising:
- introducing a P-type impurity into a silicon semi-conductor body so as to provide a surface concentration level of greater than about 10.sup.19 atoms per cm.sup.3 ;
- diffusing arsenic within said P-type region so as to provide a surface concentration level of arsenic of greater than about 10.sup.20 per cm.sup.3 ;
- continuing said diffusion step until said arsenic forms a substantially square impurity distribution.
- 2. The method of forming a semiconductor device of claim 1 wherein said P-type impurity is boron.
- 3. The method as in claim 1 wherein said diffusion step comprises:
- placing said devices into a diffusion furnace heated to around 1000.degree. C. to 1200.degree. C.; and
- providing an arsenic capsule source, having an impurity of around 10.sup.21 atoms/cm.sup.3 available in said capsule, in said furnace.
- 4. The method as in claim 3 wherein said diffusing step continues for at least 1 hour.
Parent Case Info
This is a Continuation-in-Part of copending application Ser. No. 142,820, filed May 12, 1971 now abandoned which is a continuation of application Ser. No. 765,327, filed Oct. 7, 1968, abandoned.
US Referenced Citations (9)
Non-Patent Literature Citations (1)
Entry |
Magdo et al., "Ultra High Speed Transistor" I.B.M. Tech. Discl. Bull., vol. 13, No. 6, Nov. 1970, pp. 1423-1424. |
Continuations (1)
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Number |
Date |
Country |
Parent |
765327 |
Oct 1968 |
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Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
142820 |
May 1971 |
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