Claims
- 1. A method for forming bonds between a semiconductor die having at least one bond pad on a first surface thereof and an interconnect having at least one contact member on a connection surface thereof, said at least one contact member for penetrating a layer of material on an outer surface of said at least one bond pad for connecting said at least one contact member to said at least one bond pad of said semiconductor die, said method comprising:
aligning said semiconductor die and said interconnect; bringing together said first surface of said interconnect having said at least one contact member aligned proximate said at least one bond pad on said first surface of said semiconductor die; providing a force to at least one of said semiconductor die and said interconnect; engaging said semiconductor die and said interconnect using said force; and substantially ultrasonically vibrating one of said semiconductor die and said interconnect using vibrational energy having said at least one contact member of said interconnect penetrating a portion of said at least one bond pad of said semiconductor die forming an electrical connection.
- 2. The method of claim 1, whereby said engaging and said ultrasonic vibration are continued having said at least one contact member penetrating said portion of said at least one bond pad to a predetermined depth.
- 3. The method of claim 2, wherein said predetermined depth comprises a range of about 0.3-0.8 of a thickness of said at least one bond pad.
- 4. The method of claim 2, wherein said ultrasonic vibration is conducted to achieve a vibrational amplitude in the range of about 5 to about 30 percent of said predetermined depth.
- 5. The method of claim 1, wherein said ultrasonic vibration is conducted in the range of about 5 to about 200 milliseconds.
- 6. The method of claim 2, further comprising:
detecting penetration of said at least one bond pad to said predetermined depth by detection/feedback apparatus.
- 7. A method for forming bonds between a semiconductor die having at least one bond pad on a first surface thereof and an interconnect having at least one contact member on a connection surface thereof, said at least one contact member for penetrating a layer of material on an outer surface of said at least one bond pad for connecting said at least one contact member to said at least one bond pad of said semiconductor die, said method comprising:
aligning said semiconductor die and said interconnect; bringing together said first surface of said semiconductor die and said connection surface of said interconnect having said at least one contact member aligned proximate said at least one bond pad on said first surface of said semiconductor die; providing a force to at least one of said semiconductor die and said interconnect; engaging said semiconductor die and said interconnect using said force; substantially ultrasonically vibrating one of said semiconductor die and said interconnect using vibrational energy having said at least one contact member of said interconnect penetrating a portion of said at least one bond pad of said semiconductor die forming an electrical connection, said ultrasonic vibration continuing to have said at lest one contact member penetrating said portion of said at least one bond pad to a predetermined depth; detecting penetration of said at least one bond pad to said predetermined depth by detection/feedback apparatus; and terminating said penetration of said at least one bond pad to said predetermined depth by said detection/feedback apparatus.
- 8. The method of claim 1, wherein said electrical connection comprises a nonpermanent electrical connection between said at least one bond pad and said at least one contact member.
- 9. The method of claim 1, wherein said electrical connection comprises a permanent electrical connection between said at least one bond pad and said at least one contact member.
- 10. The method of claim 1, further comprising:
retracting said semiconductor die and said interconnect from each other during application of a linear axial ultrasonic vibrational force to one of said semiconductor die and said interconnect, said retracting for disconnecting said semiconductor die from said interconnect.
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a continuation of application Ser. No. 09/921,621, filed Aug. 3, 2001, pending, which is a continuation of application Ser. No. 09/416,248, filed Oct. 12, 1999, now U.S. Pat. No. 6,296,171 B1, issued Oct. 2, 2001, which is a continuation of application Ser. No. 09/027,690, filed Feb. 23, 1998 , now U.S. Pat. No. 6,045,026, issued Apr. 4, 2000.
Continuations (3)
|
Number |
Date |
Country |
Parent |
09921621 |
Aug 2001 |
US |
Child |
10196666 |
Jul 2002 |
US |
Parent |
09416248 |
Oct 1999 |
US |
Child |
09921621 |
Aug 2001 |
US |
Parent |
09027690 |
Feb 1998 |
US |
Child |
09416248 |
Oct 1999 |
US |