Claims
- 1. A method for forming bonds between a semiconductor die having at least one bond pad on a first surface thereof and an interconnect having at least one contact member on a connection surface thereof, said at least one contact member for penetrating a layer of material on an outer surface of said at least one bond pad for connecting said at least one contact member to said at least one bond pad of said semiconductor die, said method comprising: aligning said semiconductor die and said interconnect;
bringing together the first surface of the semiconductor die and the connection surface of the interconnect having said at least one contact member aligned proximate said at least one bond pad on said first surface of said semiconductor die; engaging said semiconductor die and said interconnect using a force; and substantially ultrasonically vibrating one of said semiconductor die and said interconnect using vibrational energy having said at least one contact member of said interconnect penetrating a portion of said at least one bond pad of said semiconductor die forming an electrical connection.
- 2. The method of claim 1, whereby said engaging and said ultrasonic vibration are continued having said at least one contact member penetrating said portion of said at least one bond pad to a predetermined depth.
- 3. The method of claim 2, wherein said predetermined depth comprises a range of about 0.3-0.8 of the thickness of said at least one bond pad.
- 4. The method of claim 1, wherein said ultrasonic vibration is conducted to achieve a vibrational amplitude of in the range of about 5 to about 30 percent of the predetermined depth.
- 5. The method of claim 1, wherein said ultrasonic vibration is conducted in the range of about 5 to about 200 milliseconds.
- 6. The method of claim 2, further comprising:
detecting penetration of said at least one bond pad to the predetermined depth by detection/feedback apparatus.
- 7. The method of claim 6, further comprising:
terminating the penetration of said at least one bond pad on said first surface of said semiconductor die by detecting the penetration of said at least one bond pad to the predetermined depth by said detection/feedback apparatus.
- 8. The method of claim 1, wherein said electrical connection comprises a nonpermanent electrical connection between said at least one bond pad and said at least one contact member.
- 9. The method of claim 1, wherein said electrical connection comprises a permanent electrical connection bond between said at least one bond pad and said at least one contact member.
- 10. The method of claim 1, further comprising:
retracting said semiconductor die and said interconnect from each other during the application of a linear axial ultrasonic vibrational force to one of said semiconductor die and said interconnect, said retracting for disconnecting said semiconductor die from said interconnect.
- 11. A method for forming bonds between a semiconductor die and an interconnect comprising:
providing a semiconductor die having at least one bond pad on a first surface thereof; providing an interconnect having at least one contact member on a connection surface thereof, said at least one contact member for penetrating a layer of material on an outer surface of said at least one bond pad for connecting said at least one contact member to said at least one bond pad of said semiconductor die; aligning said semiconductor die and said interconnect; bringing together the first surface of the semiconductor die and the connection surface of the interconnect having said at least one contact member aligned proximate said at least one bond pad on said first surface of said semiconductor die; engaging said semiconductor die and said interconnect using a force; and substantially ultrasonically vibrating one of said semiconductor die and said interconnect using vibrational energy having said at least one contact member of said interconnect penetrating a portion of said at least one bond pad of said semiconductor die forming an electrical connection.
- 12. The method of claim 11, whereby said engaging and said ultrasonic vibration are continued having said at least one contact member penetrating said portion of said at least one bond pad to a predetermined depth.
- 13. The method of claim 12, wherein said predetermined depth comprises a range of about 0.3-0.8 of the thickness of said at least one bond pad.
- 14. The method of claim 11, wherein said ultrasonic vibration is conducted to achieve a vibrational amplitude of in the range of about 5 to about 30 percent of the predetermined depth.
- 15. The method of claim 11, wherein said ultrasonic vibration is conducted in the range of about 5 to about 200 milliseconds.
- 16. The method of claim 12, further comprising:
detecting penetration of said at least one bond pad to the predetermined depth by detection/feedback apparatus.
- 17. The method of claim 16, further comprising:
terminating the penetration of said at least one bond pad on said first surface of said semiconductor die by detecting the penetration of said at least one bond pad to the predetermined depth by said detection/feedback apparatus.
- 18. The method of claim 11, wherein said electrical connection comprises a nonpermanent electrical connection between said at least one bond pad and said at least one contact member.
- 19. The method of claim 11, wherein said electrical connection comprises a permanent electrical connection bond between said at least one bond pad and said at least one contact member.
- 20. The method of claim 11, further comprising:
retracting said semiconductor die and said interconnect from each other during the application of a linear axial ultrasonic vibrational force to one of said semiconductor die and said interconnect, said retracting for disconnecting said semiconductor die from said interconnect.
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application is a divisional of application Ser. No. 09/416,248, filed Oct. 12, 1999, pending, which is a continuation of application Ser. No. 09/027,690, filed Feb. 23, 1998, now U.S. Pat. No. 6,045,026, issued Apr. 4, 2000.
Divisions (1)
|
Number |
Date |
Country |
Parent |
09416248 |
Oct 1999 |
US |
Child |
09921622 |
Aug 2001 |
US |
Continuations (1)
|
Number |
Date |
Country |
Parent |
09027690 |
Feb 1998 |
US |
Child |
09416248 |
Oct 1999 |
US |