The present invention relates to the field of UV emitting luminescent compounds e.g. for use in UV lamps.
Fluorescent lamps which comprise an UV emitting phosphor are widely used for many applications, including disinfection and purification, skin tanning, medical treatments of the skin, polymer hardening, and semiconductor wafer processing.
Conventionally, UV radiation sources are based on low- or medium-pressure mercury (Hg) discharge (also referred to as mercury-vapor lamps). The emission line spectrum of a low-pressure Hg discharge is dominated by the 185 nm and 245 nm lines. Increasing the pressure results in line broadening, increasing emission in the visible spectrum at the cost of UV emission. Hence, medium-pressure Hg discharge are less efficient as UV emitters. The efficiency of Hg discharge lamps is strongly dependent on temperature due to the change in Hg vapor pressure. Moreover, the spectrum changes with lamp drive conditions and temperature, which is undesirable.
In recent years, dielectric barrier excimer discharge has drawn attention as an alternative discharge source for UV emitting discharge lamps. An excimer discharge lamp is a discharge lamp in which at least one component of the discharge-maintaining gas filling forms an excimer during operation of the lamp. Xenon (Xe) excimer discharge emits light mainly of 172 nm, and dielectric barrier driven quartz lamp comprising Xe as a filling gas shows a wall plug efficiency of more than 50%. Besides Xe as the excimer-forming gas filling component there are other well known excimer-forming filling components like Ne.
Xe excimer discharge lamps using a fluorescent compound for conversion of discharge emission into visible light or into UV light have been described, e.g. in US 2008/02588601. However, presently known UV emitting wavelength converting materials, also referred to as UV-emitting luminescent materials or UV-emitting phosphors, suffer from a number of drawbacks, such as undesirably low conversion efficiency, low photochemical and/or chemical stability, Lewis alkalinity, undesirable chemical interaction with the discharge resulting in degradation of the UV-emitting luminescent material, and undesirably low disinfection efficiency due to spectral mismatch with the germicidal action curve. For example, the chemical instability of the luminescent materials of US 2008/02588601 in the presence of the excimer discharge may require a protective coating e.g. of alumina, which reduces the conversion efficiency.
Hence, there remains a need in the art for improved UV emitting lamps and materials used therein.
It is an object of the present invention to at least partly overcome the drawbacks of the prior art, and to provide a UV emitting light source which has improved efficiency and/or which is particularly useful for UV sterilization.
According to a first aspect of the invention, this and other objects are achieved by a wavelength converting material comprising a compound of the formula:
(Y1-w-x-y-zScwLaxGdyLuz)2-a(SO4)3:Mea
wherein Me represents a trivalent cation or a mixture of trivalent cations capable of emitting UV-C radiation, and wherein each of w, x, y and z is in the range of from 0.0 to 1.0 and w+x+y+z≦1.0, and wherein 0.0005≦a≦0.2. The wavelength converting material provides intense and efficient conversion of UV light of the wavelength range of 100 to 200 nm into light of the wavelength range of 200 to 300 nm. The wavelength converting material thus has high quantum efficiency. Furthermore, the UV emission from the present wavelength converting material has a high degree of overlap with the germicidal action curve (GAC), for example an integral overlap of at least 70%. The present wavelength converting material is also temperature stable and thus tolerates the high operating temperature of an excimer lamp. Additionally, the rare earth metal sulphates are easy to produce.
In embodiments of the invention, Me is at least one of trivalent praseodymium ions (Pr3+), neodymium ions (Nd3+) and bismuth ions (Bi3+). The 4f-5d transitions of Pr3+ and Nd3+ provide fast luminescence, having a large absorption cross-section (high probability of an absorption process), and result in efficient wavelength converting materials. This is also true for the 6s-6p transition of Bi3+.
In embodiments of the invention, a is in the range of 0.002 to 0.1, and typically is in the range of 0.01 of 0.04 (corresponding to an Me content of 0.5 to 2 at. %). Such contents of the dopant (Me) provides particularly good absorption and avoids or reduces concentration quenching.
In embodiments of the invention, Me comprises at least one of Pr3+, Nd3+ and Bi3+ and additionally at least one further trivalent cation. By using such a co-dopant, the emission spectrum of the wavelength converting material can be adjusted to even better suit the intended application.
In another aspect, the present invention relates to a wavelength converting screen or a wavelength converting coating, comprising a wavelength converting material as defined above. Such a screen or coating is typically used in an excimer discharge lamp, in which it is arranged to receive UV light resulting from the discharge.
Hence, in another aspect, the invention provides an illumination device comprising a source of UV light to be converted, i.e. a source of unconverted light, and a wavelength converting material or a wavelength converting screen or coating as described above, for converting the UV light from said source. Typically, the illumination device may be a discharge lamp comprising a discharge vessel containing a gas comprising one or more of Ar, Kr, Xe, F2, Cl2, Br2, and I2, and means for creating an electrical discharge, and wherein at least part of a wall of the discharge vessel is provided with a wavelength converting material as described above, e.g. in the form of a coating.
In embodiments of the invention, the illumination device may be or form part of a medical device or a cosmetic treatment device.
In another aspect, the invention provides a cosmetic treatment device comprising a wavelength converting composition as defined above, a wavelength converting screen or coating as defined above, and/or an illumination device as defined above.
In a further aspect, the invention provides a medical device comprising a wavelength converting composition as defined above, a wavelength converting screen or coating as defined above, and/or an illumination device as defined above. For example, the medical device may be a phototherapy device.
The illumination device described above may form part of a system for UV illumination comprising e.g. optical components, such as lenses, waveguides etc, control circuitry and devices, cooling arrangements, mechanical support structures, etc. Such a system may be a system for sterilization, disinfection and/or purification by germicidal UV illumination. Alternatively, a system comprising said illumination device may be a medical device system. Alternatively, said system may be a chemical reactor, or a photoetching equipment.
In another aspect, the present invention relates to the use of a wavelength converting composition as defined above for sterilization, disinfection or purification.
In yet another aspect, the invention relates to the use of a wavelength converting composition as defined above in a cosmetic treatment method, typically tanning.
In a further aspect, the invention provides a method of producing a wavelength converting composition as defined above, comprising: reacting an oxide of Y, Lu, Sc La or Gd, with a sulphate or oxide of said trivalent cation in a sulphuric acid-containing medium; and removing said medium. These steps are typically followed by a step of disintegrating, e.g. milling, the reaction product, and then by annealing the disintegrated reaction product, to obtain a crystal lattice of rare earth metal orthosulphate containing a dopant dispersed therein.
It is noted that the invention relates to all possible combinations of features recited in the claims.
This and other aspects of the present invention will now be described in more detail, with reference to the appended drawings showing embodiment(s) of the invention.
a shows the XRD pattern of a wavelength converting compound according to an embodiment of the invention (Y2(SO4)3:Pr).
b shows the reflection, excitation and emission spectra of a wavelength converting compound according to an embodiment of the invention (Y2(SO4)3:Pr).
a-b show respectively the XRD pattern and the reflection (unbroken line), excitation (broken line) and emission (dotted line) spectra of another wavelength converting compound according to an embodiment of the invention (Lu2(SO4)3:Pr).
a-b show respectively the XRD pattern and the reflection (unbroken line), excitation (broken line) and emission (dotted line) spectra of another wavelength converting compound according to an embodiment of the invention (La2(SO4)3:Pr).
a-b show respectively the XRD pattern and the reflection, excitation and emission spectra of another wavelength converting compound according to an embodiment of the invention (Y2(SO4)3:Nd).
a-c show respectively the XRD pattern and the reflection (Fig. b) and emission (
a-b show respectively the XRD pattern and the reflection, excitation and emission spectra of another wavelength converting compound according to an embodiment of the invention (Lu2(SO4)3:Nd).
The present inventors have found that certain rare earth metal oxide sulfates doped with Pr3+, Nd3+ or Bi3+ have excellent properties for use as VUV to UV-C converting compounds e.g. for use in excimer discharge lamps.
The wavelength converting compounds according to the invention have the general formula Ln2(SO4)3:Me, or more specifically Ln2-a(SO4)3:Mea (which may also be written Ln2-aMea(SO4)3), in which Ln is one or more of yttrium (Y), scandium (Sc), lanthanum (La), gadolinium (Ga) and lutetium (Lu), and Me is a trivalent cation, a being in the range from 0.0005 to 0.2. In particular, the wavelength converting compound has the formula
(Y1-w-x-y-zScwLaxGdyLuz)2-a(SO4)3:Mea,
wherein each of w, x, y and z is in the range from 0.0 to 1.0 and w+x+y+z≦1.0, and wherein Me and a respectively are as defined above.
In embodiments of the invention, a may be in the range from 0.001 to 0.1, typically from 0.002 to 0.1, or from 0.01 to 0.04.
In the wavelength converting compounds of the present invention, the sulfate of Sc, Y, La, Gd and/or Lu provides a host lattice which is activated by small amounts of Me as an activator, also referred to as a dopant. Me represents a trivalent cation, typically ions of bismuth (Bi3+), praseodymium (Pr3+) or neodymium (Nd3+). The activator Me is capable of emitting UV light in the range of 200-300 nm.
As used herein, a wavelength converting compound refers to a compound which is capable of absorbing electromagnetic radiation of a particular wavelength or wavelength range and of emitting electromagnetic radiation of a different wavelength or wavelength range, typically of a longer wavelength.
As used herein, a wavelength converting material refers to a material having the same capability of absorption and emission as a wavelength converting compound. A wavelength converting material may be composed of a single type of wavelength converting compound or of a mixture of different types of wavelength converting compounds.
As used herein, the term “activator” or “dopant” refers to an impurity present in a host lattice, in particular trivalent ions, which is capable of emitting UV radiation upon excitation.
Wavelength converting compounds according to the invention have been found to have intense and efficient emission of UV radiation in the wavelength range of 200-300 nm, for example 200-280 nm or 220-300 nm.
Advantageously, the emission spectrum of the wavelength converting compounds according to the invention have a large overlap with the germicidal action curve (GAC), which shows the germicidal effect of UV light on E. coli. This effect is mainly achieved by radiation of 200-300 nm. As can be seen in
Because of its spectral characteristics, the wavelength converting compounds of the invention are useful as converters of very short wavelength UV radiation (typically VUV, having a wavelength of 100-200 nm) into UV light of 200-300 nm, for example 200-280 nm (representing part of the UV-C spectrum) or 220-300 nm, or 220-280 nm. The wavelength converting compounds of the invention may have strong absorption in the range of 100-200 nm, in particular 150-180 nm.
UV emission from the wavelength converting compounds according to embodiments of the invention may be useful in various applications. For example, due to large overlap with the germicidal action curve, the wavelength converting compounds may be particularly useful for ultraviolet germicidal irradiation to achieve sterilization, disinfection and/or purification, e.g. of food, air or water, such as drinking water, waste water, pool or pond water and the like, of objects such as laboratory or medical equipment, keyboards, personal care appliances such as tooth brushes and shavers, cosmetic tools, etc.
However, the wavelength converting compounds of the invention may also be useful for UV irradiation for purposes other than sterilization, disinfection and/or purification. For example, the UV emission of the present wavelength converting compounds may be used for medical or cosmetic treatment of humans or animals, e.g. cosmetic or medical treatment of the skin. Examples of cosmetic treatment by UV irradiation include tanning Examples of medical treatment by UV irradiation include treatment of skin conditions and diseases, such as psoriasis, vitiligo, acne, and treatment of vitamin D deficiency.
Furthermore, UV irradiation with the emission wavelengths of the present wavelength converting compounds may be useful to achieve chemical reactions such as crosslinking, photopolymerization, photooxidation, photoreduction, and photocatalysis, and other photochemical applications.
Furthermore, UV irradiation with the emission wavelengths of the present wavelength converting compounds may be useful in the processing of semiconductor wafers, in particular for photoetching.
Hence, the wavelength converting compounds of the invention may be applied in UV emitting illumination devices for a wide range of applications. For example, a wavelength converting compound according to the invention may be applied in a UV emitting discharge lamp. Typically, the inner wall of the discharge vessel of a discharge lamp may be provided with a wavelength converting coating containing the wavelength converting compound.
A discharge lamp according to embodiments of the invention is shown in cross-section in
Preferably, in embodiments of the invention, the discharge lamp is an excimer discharge lamp, such as a xenon (Xe) excimer discharge lamp, a neon (Ne) excimer discharge lamo, or a xenon/neon excimer discharge lamp.
A discharge lamp, in particular an Xe, Ne or Xe/Ne excimer discharge lamp may be applied in a medical device for phototherapy, in particular phototherapy of the skin; a cosmetic device for cosmetic treatment, in particular of the skins; a system for sterilization, disinfection and/or purification; a chemical reactor; and a system for processing, in particular photoetching, of semiconductor wafers.
The wavelength converting compounds of the present invention may be produced by reacting an oxide of Y, Lu, Sc La or Gd, respectively, with a sulphate or oxide of the trivalent cation intended as activator (in particular Bi3+, Pr3+ or Nd3+) in an acid medium, typically containing sulphuric acid. The reaction product is then disintegrated, e.g. by milling or grinding, and annealed at high temperature, for example at a temperature in the range of from 500° C. to 900° C., to obtain the host lattice and to distribute the activator therein by diffusion. For example, said reacting can be achieved by dissolving said oxide of Y, Lu, Sc La or Gd, together with said sulphate or oxide in sulphuric acid, and heating the resulting solution to a temperature in the range of about 600° C. to about 800° C. for a time period of from 1 to 8 hours, such as from 2 to 6 hours, and typically about 4 hours, and removing said sulphuric acid medium e.g. by allowing it to evaporate.
4.4936 g of Y2O3 and 0.06781 g of Pr2(SO4)3*6H2O as reagents were dissolved in 20 ml concentrated sulphuric acid and subsequently cooked until the acid was completely removed. The remaining powder was milled, filled into an alumina crucible, and annealed at 600° C. under nitrogen for 4 hours. The XRD pattern of the resulting compound, Y1.99(SO4):Pr0.01 (also written Y1.99Pr0.01(SO4)3) is shown in
7.9188 g of Lu2O3 and 0.06781 g of Pr2(SO4)3*6H2O as reagents were dissolved in 20 ml concentrated sulphuric acid and subsequently cooked until the acid was completely removed. The remaining powder was milled, filled into an alumina crucible, and annealed at 800° C. under nitrogen for 4 hours. The XRD pattern of the resulting compound, Lu1.99Pr0.01(SO4)3, is shown in
6.4836 g of La2O3 and 0.06781 g of Pr2(SO4)3*6H2O as reagents were dissolved in 20 ml concentrated sulphuric acid and subsequently cooked until the acid was completely removed. The remaining powder was milled, filled into an alumina crucible, and annealed at 800° C. under nitrogen for 4 hours. The XRD pattern of the resulting compound, La1.98Pr0.02(SO4)3, is shown in
4.4710 g of Y2O3 and 0.06729 g of Nd2O3 as reagents were dissolved in 20 ml concentrated sulphuric acid and subsequently cooked until the acid was completely removed. The remaining powder was milled, filled into an alumina crucible, and annealed at 600° C. under nitrogen for 4 hours. The XRD pattern of the resulting compound, Y1.98Nd0.02(SO4)3, is shown in
7.8991 g of Lu2O3 and 0.09319 g Bi2O3 as reagents were dissolved in 20 ml concentrated sulphuric acid and subsequently cooked until the acid was completely removed. The remaining powder was milled, filled into an alumina crucible, and annealed at 600° C. under nitrogen for 4 hours. The XRD pattern of the resulting compound, Lu1.98Bi0.02(SO4)3, is shown in
7.8991 g of Lu2O3 and 0.06729 g of Nd2O3 as reagents were dissolved in 20 ml concentrated sulphuric acid and subsequently cooked until the acid was completely removed. The remaining powder was milled, filled into an alumina crucible, and annealed at 600° C. under nitrogen for 4 hours. The XRD pattern of the resulting compound, Lu1.98Nd0.02(SO4)3, is shown in
The person skilled in the art realizes that the present invention by no means is limited to the preferred embodiments described above. On the contrary, many modifications and variations are possible within the scope of the appended claims.
Number | Date | Country | Kind |
---|---|---|---|
11150063.3 | Jan 2011 | EP | regional |
Filing Document | Filing Date | Country | Kind | 371c Date |
---|---|---|---|---|
PCT/IB11/55626 | 12/13/2011 | WO | 00 | 7/1/2013 |