Claims
- 1. A method of forming a diode comprising:forming an area of a thin dielectric film over a conductive silicon surface of one conductivity type in a region of a thick dielectric film over the conductive silicon surface of one conductivity type; forming a conductive silicon film of a second conductivity type over the thin dielectric region; causing at least one region of the second conductivity type in the conductive silicon surface; and causing at least one conductive path through the thin dielectric film.
- 2. The method of claim 1, wherein said thick dielectric film is silicon dioxide.
- 3. The method of claim 1, wherein said thin dielectric film is comprised of a material selected from the group consisting of silicon dioxide, silicon oxynitride, silicon nitride, and any combination thereof.
- 4. The method of claim 1, wherein said thin dielectric film is a plurality of films selected from the group consisting of silicon dioxide, silicon oxynitride, silicon nitride, and any combination thereof.
- 5. The method of claim 1, wherein said conductive silicon film is comprised of a material selected from the group consisting of: doped polysilicon, undoped polysilicon, epitaxial silicon, and any combination thereof.
- 6. The method of claim 1, wherein said causing consists of applying a voltage.
- 7. The method of claim 1, wherein said causing consists of applying a current.
- 8. A method of forming a diode comprising:forming region of a thick dielectric film over a conductive silicon surface of one conductivity type; forming an area of a thin dielectric film over said conductive silicon surface of one conductivity type in said region of said thick dielectric film; forming a first conductive path from the conductive silicon surface to an operating circuit; forming a conductive silicon film of a second conductivity type over the thin dielectric region; forming a second conductive path from the conductive silicon film to the operating circuit; and causing at least one region of the second conductivity type in the conductive silicon surface and at least one third conductive path through the thin dielectric film by applying a voltage difference across the first conductive path and the second conductive path.
- 9. The method of claim 8, wherein said thick dielectric film is silicon dioxide.
- 10. The method of claim 8, wherein said thin dielectric film is comprised of a material selected from the group consisting of silicon dioxide, silicon oxynitride, silicon nitride, and any combination thereof.
- 11. The method of claim 8, wherein said thin dielectric film is a plurality of films selected from the group consisting of silicon dioxide, silicon oxynitride, silicon nitride, and any combination thereof.
- 12. The method of claim 8, wherein said first conductive path is comprised of a material selected from the group consisting of doped polysilicon, aluminium, copper, titanium, tungsten, titanium nitride, and any combination thereof.
- 13. The method of claim 8, wherein said conductive silicon film is comprised of a material selected from the group consisting of: doped polysilicon, undoped polysilicon, epitaxial silicon, and any combination thereof.
- 14. The method of claim 8, wherein said second conductive path is comprised of a material selected from the group consisting of doped polysilicon, aluminum, copper, titanium, tungsten, titanium nitride, and any combination thereof.
- 15. The method of claim 8, wherein said causing consists of flowing an electric current through the first conductive path and the second conductive path.
- 16. The method of claim 8, wherein said causing consists of flowing an electric current through the thin dielectric film.
Parent Case Info
This application claims priority under 35 USC § 119(e)(1) of provisional U.S. application Ser. No. 60/107,180 filed Nov. 5 1998.
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Provisional Applications (1)
|
Number |
Date |
Country |
|
60/107180 |
Nov 1998 |
US |