Variable attenuator

Abstract

A variable attenuator is an attenuator which is formed by coupling two transmission lines having an electrical length of λ/4 corresponding to a wavelength λ of an input signal, has one end of one transmission line as an input terminal, has the other end of the one transmission line as a through terminal, has one end of the other transmission line as a coupling terminal and has the other end of the other transmission line as an output terminal, wherein the variable attenuator has a resistor pair having the same impedance at both the through terminal and the coupling terminal, and has a resistor pair having the same impedance at both the input terminal and the output terminal.

Description

TECHNICAL FIELD

An aspect of the present invention relates to a variable attenuator for an RF signal.

BACKGROUND

A configuration in which field effect transistors (FETs) 161 and 162 and 50Ω resistors 151 and 152 are connected in parallel to a through terminal and a couple terminal of a 90° coupler is known as a variable attenuator of an RF signal (refer to Patent Document 1: Japanese Unexamined Patent Publication No. 2000-507751). In this circuit, when the FETs 161 and 162 are turned off, a signal transmitted to an input terminal is absorbed by the 50Ω resistors 151 and 152, and an attenuation amount of a signal output from an output terminal (an isolation terminal) is maximized, and when the FETs 161 and 162 are turned on, most of the signal is reflected to the output terminal, and the attenuation amount of the signal output from the output terminal is reduced.

In the circuit described in Patent Document 1, when a resistance value of a variable resistor matches a characteristic impedance of a transmission line constituting a quadrature phase hybrid circuit, an attenuation amount of an output signal becomes maximum. However, the maximum value of the attenuation amount may be insufficient depending on the application. Therefore, a variable attenuation circuit with a sufficiently large attenuation amount is desired.

SUMMARY

A variable attenuator according to an aspect of the present invention is a variable attenuator which is formed by coupling a first transmission line and a second transmission line having an electrical length of λ/4 corresponding to a wavelength λ of an input signal, has one end of the first transmission line as an input terminal, has the other end of the first transmission line as a through terminal, has one end of the second transmission line as a coupling terminal and has the other end of the second transmission line as an output terminal, wherein the variable attenuator has two first resistance elements having the same impedance at both the through terminal and the coupling terminal, and has two second resistance elements having the same impedance at both the input terminal and the output terminal.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a circuit diagram of a variable attenuator according to an embodiment.

FIG. 2 is a circuit diagram showing a detailed configuration of the variable attenuator of FIG. 1.

FIG. 3A is a plan view showing a configuration of transmission lines L1 and L2 formed on a circuit board.

FIG. 3B is a cross-sectional view of the circuit board shown in FIG. 3A along line IIIB-IIIB.

FIG. 4 is a graph showing measurement results of an S parameter (S41) in the embodiment.

FIG. 5A is a view showing measurement results of input/output impedance in the embodiment.

FIG. 5B is a view showing the measurement results of the input/output impedance in the embodiment.

FIG. 5C is a view showing the measurement results of the input/output impedance in the embodiment.

FIG. 5D is a view showing the measurement results of the input/output impedance in the embodiment.

FIG. 6 is a graph showing the measurement results of the S parameter (S41) in the embodiment.

FIG. 7A is a view showing the measurement results of the input impedance in the embodiment.

FIG. 7B is a graph showing measurement results of an S parameter (S11) in the embodiment.

FIG. 8A is a view showing the measurement results of the output impedance in the embodiment.

FIG. 8B is a graph showing measurement results of an S parameter (S44) in the embodiment.

FIG. 9 is a circuit diagram showing another configuration example of a resistor 5a of FIG. 1.

DETAILED DESCRIPTION

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the description of the drawings, the same elements will be designated by the same reference symbols, and redundant description will be omitted.

Configuration of Variable Attenuator

FIG. 1 is a circuit diagram of a variable attenuator according to an embodiment. The variable attenuator 1 shown in FIG. 1 is a circuit which attenuates and outputs an input signal (for example, a high frequency signal of 15 to 25 GHz) in an RF band. The variable attenuator 1 includes two transmission lines L1 and L2 coupled to each other, a resistor pair 3 including two resistance elements 3a and 3b, and a resistor pair 5 including two resistance elements 5a and 5b.

Each of the two transmission lines L1 and L2 is configured with a linear pattern and has an electrical length of λ/4 corresponding to a wavelength λ of an input signal. The two transmission lines L1 and L2 are coupled to each other over a portion of the electrical length λ/4. One end of the transmission line L1 is electrically connected to an input terminal RF_IN, and the other end is electrically connected to a through terminal RF_TH. Additionally, one end of the transmission line L2 coupled to the transmission line L1 is electrically connected to a coupling terminal RF_CP, and the other end of the transmission line L2 is electrically connected to an output terminal RF_OUT. The output terminal RF_OUT may be called an isolation terminal. In such a configuration, an input signal input from the input terminal RF_IN is transmitted from the transmission line L1 side to the transmission line L2 side, and an output signal is generated at the output terminal RF_OUT.

The resistance elements 3a and 3b have the same resistance value and are provided between the through terminal RF_TH and the coupling terminal RF_CP and a ground GND. The resistance elements 5a and 5b have the same resistance value and are provided between the input terminal RF_IN and the output terminal RF_OUT and the ground GND.

FIG. 2 shows a specific circuit configuration of the resistor pairs 3 and 5. As shown in FIG. 2, each of the resistor pairs 3 and 5 is configured by transistors.

Specifically, the resistance element 3a includes an FET 7a and a resistor 9a. A drain which is one terminal of the FET 7a is connected to the through terminal RF_TH, a source which is the other terminal of the FET 7a is connected to the ground GND, and a gate which is a control terminal of the FET 7a is connected to a control terminal Vg2 via the resistor 9a. Thus, the gate of the FET 7a receives a control signal supplied to the control terminal Vg2.

Similarly, the resistance element 3b includes an FET 7b and a resistor 9b. A drain which is one terminal of the FET 7b is connected to the coupling terminal RF_CP, a source which is the other terminal of the FET 7b is connected to the ground GND, and a gate which is a control terminal of the FET 7b is connected to the control terminal Vg2 via the resistor 9b. Thus, as in the FET 7a, the gate of the FET 7b receives a control signal supplied to the control terminal Vg2.

The FETs 7a and 7b constituting the resistor pair 3 have substantially the same electrical characteristics. Therefore, the resistance values of the resistance elements 3a and 3b can be changed while maintaining the same value by adjusting the control signal supplied to the control terminal Vg2.

The resistance element 5a includes an FET 13a and a resistor 15a. A drain which is one terminal of the FET 13a is connected to the input terminal RF_IN, a source which is the other terminal of the FET 13a is connected to the ground GND, and a gate which is a control terminal of the FET 13a is connected to a control terminal Vg1 via the resistor 15a. Thus, the gate of the FET 13a receives the control signal supplied to the control terminal Vg1.

Similarly, the resistance element 5b is configured to include an FET 13b and a resistor 15b. A drain which is one terminal of the FET 13b is connected to the output terminal RF_OUT, a source which is the other terminal of the FET 13b is connected to the ground GND, and a gate which is a control terminal of the FET 13b is connected to the control terminal Vg1 via the resistor 15b. Thus, the gate of the FET 13b receives the control signal supplied to the control terminal Vg1.

The FETs 13a and 13b constituting the resistor pair 5 have substantially the same electrical characteristics. Therefore, the resistance values of the resistance elements 5a and 5b can be changed while being set to the same value by adjusting the control signal supplied to the control terminal Vg1.

Here, the resistor pairs 3 and 5 may be set to have the same resistance value by setting the electric characteristics of the FETs 7a and 7b and the electric characteristics of the FETs 13a and 13b to be the same, setting the resistance values of the resistors 9a and 9b and the resistance values of the resistors 15a and 15b to be the same and making the control signals supplied to the control terminal Vg1 and the control terminal Vg2 the same. On the other hand, the resistance values of the resistor pair 3 and the resistor pair 5 may be set to be different from each other by making the control signals supplied to the control terminal Vg1 and the control terminal Vg2 different from each other.

A configuration example of the transmission lines L1 and L2 will be described with reference to FIGS. 3A and 3B. FIG. 3A is a plan view of the transmission lines L1 and L2 formed on the circuit board, and FIG. 3B is a cross-sectional view taken along line IIIB-IIIB shown in FIG. 3A.

As shown in FIGS. 3A and 3B, the transmission lines L1 and L2 are formed inside, for example, an insulating layer 23 formed of polyimide or the like and formed on a semiconductor substrate 21 such as a GaAs substrate having a predetermined thickness (for example, 250 μm). For example, the transmission line L2 is formed of a metal (gold or the like) and formed linearly along the semiconductor substrate 21 to have a thickness of 1 μm and a width of 12 μm on the semiconductor substrate 21 side in the insulating layer 23. The transmission line L1 is formed of a metal and formed linearly to have a thickness of 1 μm and a width of 9 μm on the opposite side of the transmission line L2 with respect to the semiconductor substrate 21 in the insulating layer 23. The transmission line L1 and the transmission line L2 form a combining portion (a coupling portion) overlapping each other in parallel with a length of λ/4.

Further, a ground layer 25 which is spaced apart from upper portions of the transmission lines L1 and L2, extends parallel to the transmission lines L1 and L2 and is formed of a metal (for example, gold) having a predetermined thickness (for example, 2 μm or more) is formed on the outermost surface of the insulating layer 23. The transmission lines L1 and L2 have a gap of 2 μm therebetween, and a degree of coupling between the transmission lines L1 and L2 is determined by the gap and a dielectric constant of the insulating layer filling the gap. The width of the transmission line L1 is made narrower than a width of the transmission line L2 in order to widen the width of the transmission line L2 (to narrow the width of the transmission line L1) and to equalize the degree of coupling of both the transmission lines L1 and L2 with the ground layer 25, and this is because a distance between the ground layer 25 and the transmission line L1 is narrow and thus the degree of coupling of the transmission line L1 with the ground becomes larger than that of the other transmission line L2. In addition, a region of the ground layer 25 overlapping the transmission lines L1 and L2 is also removed in order to equalize the degree of coupling of the transmission lines L1 and L2 with the ground layer 25 by providing the removal region without making the widths of the two transmission lines L1 and L2 largely different, and this is because, when the ground layer is provided on the entire surface without removing the region and the degree of coupling of the transmission line L1 and the transmission line L2 with the ground layer 25 is made equal, the width of the upper transmission line L1 becomes too narrow.

According to the variable attenuator 1 according to the embodiment, the impedance of the resistor pair 3 provided on the through terminal RF_TH and the coupling terminal RF_CP can be changed. Furthermore, the impedance of the resistor pair 5 provided on the input terminal RF_IN and the output terminal RF_OUT can be changed by changing. Specifically, when the resistance values (the impedances) of the resistor pairs 3 and 5 are matched to a characteristic impedance of one of the transmission lines L1 and L2 which is respectively connected thereto, reflection of signals is minimized. On the other hand, as the respective resistance values (the impedances) deviate from the characteristic impedance of the one of the transmission lines L1 and L2, the reflection of signals increases due to the impedance mismatch. As a result, the attenuation amount of the signal output from the output terminal RF_OUT can be changed.

In the embodiment, the attenuation amount can be increased by providing the resistor pair 5 in addition to the resistor pair 3. Further, since the resistance elements 5a and 5b constituting the resistor pair 5 are set to have the same resistance value, the attenuation operation of the attenuator 1 can be stabilized.

In particular, in the embodiment, control signals received at control terminals of a transistor pair included in the resistor pair 3 and a transistor pair included in the resistor pair 5 are set to be the same, and thus resistance values between terminals of transistors are matched to each other. Thus, the maximum attenuation amount can be increased. Furthermore, when the control signals received at the control terminals of the transistor pair included in the resistor pair 3 and the transistor pair included in the resistor pair 5 are set to match each other, the maximum attenuation amount can also be further increased.

Hereinafter, the measurement result of the characteristic of the variable attenuator 1 will be shown.

FIG. 4 shows an S parameter (S41, the attenuation amount) corresponding to a strength of a signal from the input terminal RF_IN to the output terminal RF_OUT when the control signals applied to the control terminal Vg1 and the control terminal Vg2 are independently changed. Here, a frequency is swept in a region of 15 to 25 GHz. When the control signal applied to the control terminal Vg2 is fixed at −0.7 V and the control signal applied to the control terminal Vg1 is changed in a range of −0.7 V to −0.2 V, the attenuation amount can be about −10 dB. Further, when the control signal given to control terminal Vg1 is fixed at −0.2 V which is an upper limit value and the control signal given to control terminal Vg2 is changed in the range of −0.7 V to −0.2 V, the attenuation amount can be further increased to −40 dB.

Further, FIGS. 5A to 5D show S parameters (S11 and S44) corresponding to an input impedance and an output impedance which correspond to the measurement results shown in FIG. 4. FIGS. 5A and 5B respectively show S11 and S44 when the control signal given to the control terminal Vg2 is fixed and the control signal given to the control terminal Vg1 is changed, and FIGS. 5C and 5D respectively show S11 and S44 when the control signal given to the control terminal Vg1 is fixed to the upper limit value and the control signal given to the control terminal Vg2 is changed. As described above, when the control signal supplied to the control terminal Vg1 is changed, the input impedance and the output impedance change slightly, but an amount of change is within an allowable range. On the other hand, when the control signal applied to the control terminal Vg2 is changed, the fluctuation of the input impedance and the output impedance is suppressed to a small value.

FIG. 6 shows S41 when the control signal applied to the control terminal Vg1 and the control signal applied to the control terminal Vg2 are simultaneously and similarly changed. As the figure shows, the attenuation amount can be set as large as −40 dB by changing the signals applied to the control terminals Vg1 and Vg2 similarly in the range of −0.7 V to −0.2 V.

Further, FIGS. 7A, 7B, 8A and 8B show results of evaluation of the input impedance (S11) and the output impedance (S44) of the attenuator 1 in the frequency range of 15 to 25 GHz using the control signals given to the control terminals Vg1 and Vg2 as parameters. In the present invention, a desired attenuation amount is obtained by inserting the resistor pair 5 into the input terminal RF_IN and the output terminal RF_OUT, and by changing an equivalent impedance thereof. As a result, when the input/output impedance largely deviates from the characteristic impedance, transmission characteristics of circuits connected to a front stage and a rear stage of the attenuator deteriorate. FIGS. 7A and 8A show S11 and S44 in a Smith chart, and FIGS. 7B and 8B show values of S11 and S44. As the figures shows, although the input impedance and the output impedance are affected by the signals applied to control terminals Vg1 and Vg2, that is, the presence of the resistor pair 5, the impedance matching between the input and the output does not greatly change because both impedances change similarly. In addition, the return is suppressed to about −10 dB in a wide range of 15 to 25 GHz of the frequency of the input signal.

While the principles of the present invention have been illustrated and described in the preferred embodiment, it will be appreciated by those skilled in the art that the present invention can be modified in arrangement and detail without departing from such principles. The present invention is not limited to the specific configuration disclosed in the embodiment. Therefore, all modifications and changes coining from the scope of claims and the scope of the spirit thereof will be claimed.

For example, the configurations of the resistor pairs 3 and 5 included in the variable attenuator 1 of the above-described embodiment can be variously changed. FIG. 9 shows another configuration example of the resistance element 5a. The same configuration can be adopted for the other resistance element 3a.

The resistance element 5a shown in FIG. 9 includes at least two FETs 31a and 33a connected in series between input terminal RF_IN and the ground GND and having the same electrical characteristics as each other. Additionally, in each of the two FETs 31a and 33a, the control signal is supplied from the control terminal Vg1 to the control terminal via the resistor 15a. The resistance element 5b also has the same configuration. According to such a modified example, when the strength of the input signal is high, the power applied to one stage of the transistors connected in series can be reduced. As the result, a breakdown of the transistor can be prevented and distortion of the signal line can be reduced by distributing the applied voltage.

Claims

1. A variable attenuator comprising: a first transmission line and a second transmission line having an electrical length of λ/4 corresponding to a wavelength λ of an input signal and coupled to each other;an input terminal provided at one end of the first transmission line;a through terminal provided at the other end of the first transmission line;a coupling terminal provided at one end of the second transmission line;an output terminal provided at the other end of the second transmission line;a first resistance element pair connected to each of the through terminal and the coupling terminal and having the same impedance as each other; anda second resistance element pair connected to each of the input terminal and the output terminal and having the same impedance as each other.

2. The variable attenuator according to claim 1, wherein the first resistance element pair includes a first transistor having terminals connected between the through terminal or the coupling terminal and the ground, andthe second resistance element pair includes a second transistor having terminals connected between the input terminal or the output terminal and the ground.

3. The variable attenuator according to claim 2, wherein a control terminal of the first transistor receives a first control signal, and a control terminal of the second transistor receives a second control signal.

4. The variable attenuator according to claim 3, wherein the first control signal and the second control signal are the same signal.

5. The variable attenuator according to claim 3, wherein the second transistor includes at least two transistors connected in series between the input terminal and the output terminal and the ground and having the same characteristics as each other, andthe two transistors are driven by the second control signal.

6. The variable attenuator according to claim 5, wherein the first transistor includes at least two transistors connected in series between the through terminal and the coupling terminal and the ground and having the same characteristics as each other, andthe two transistors are driven by the first control signal.

7. The variable attenuator according to claim 1, further comprising: a semiconductor substrate;an insulating layer formed on the semiconductor substrate; anda ground layer formed on the insulating layerwherein the first transmission line and the second transmission line are metal lines formed in parallel to overlap each other in the insulating layer.

8. The variable attenuator according to claim 7, wherein, among the first transmission line and the second transmission line, a width along the semiconductor substrate in one transmission line which is closer to the ground layer is smaller than a width along the semiconductor substrate in the other transmission line.

9. The variable attenuator according to claim 7, wherein the ground layer is formed in a region except a region which overlaps the first transmission line and the second transmission line.