This application is based upon and claims the benefit of priority of the prior Japanese Patent Application No. 2011-054681, filed on Mar. 11, 2011, the entire contents of which are incorporated herein by reference.
The present invention relates to a variable filter to be used for band pass of a high frequency signal, and a communication apparatus using this filter.
A market of mobile communication including portable phones is expanding, and high performance of its service is under progress. As frequency band used by mobile communication gradually shifts to a frequency band higher than giga hertz (GHz), there is a tendency for mobile communication to become multi-channel. A possibility of future introduction of software radio (SDR: software-defined-radio) is being studied vigorously. In order to realize software radio, a wider adjustment range of circuit characteristics is desired.
The frequency variable filter 100j has channel filters corresponding in number to the number of channels. A multi-channel increases the number of channel filters, complicates the structure, and increases the size and cost. A possibility of realizing SDR is small.
Attention has been paid recent years to a compact micro machine device using MEMS (micro electro mechanical systems). An MEMS device (micro machine device) using MEMS is able to have a high Q (quality factor) and be applied to a high frequency band variable filter (Patent Documents 1 and 2, Non-Patent Documents 1, 2, and 3). Since an MEMS device is compact and has a low loss, it is often used for a CPW (coplanar waveguide) distributed constant resonator.
Non-Patent Document 3 discloses a filter having the structure that a plurality of variable capacitors of MEMS devices ride over a three-stage distributed constant line. In this filter, a control voltage Vb is applied to a drive electrode of a MEMS device to displace a variable capacitor, change a gap to a distributed constant line, and change an electrostatic capacitance. Change in the electrostatic capacitance changes the pass band of the filter.
[Patent Document 1] JP-A-2008-278147
[Patent Document 2] JP-A-2010-220139
[Non-Patent Document 1] D. Peroulis et al, “Tunable Lumped Components with Applications Reconfigurable MEMS Filters”, 2001 IEEE MTT-S Digest, p 341-344
[Non-Patent Document 2] E. Fournet et al, “MEMS Switchable Interdigital Coplanar Filter”, IEEE Trans. Microwave Theory Tech., vol. 51, No. 1 p 320-324, January 2003
[Non-Patent Document 3] A. A. Tamijani et al, “Miniature and Tunable Filters Using MEMS Capatitors”, IEEE Trans. Microwave Theory Tech., vol. 51, No. 7, p 1878-1885, July 2003
Although a conventional filter is able to make variable the center frequency of a pass band, it is not able to change largely a pass band width.
According to one aspect, a variable filter includes:
a first resonator including a transmission line whose one end is connected to the input terminal;
a second resonator including a transmission line whose one end is connected to the output terminal;
a coupling portion including a transmission line whose one end is connected to other ends of the first and second resonators and whose another end is an open end, or a structure whose one end is connected to other ends of the first and second resonators, including a serial connection of a transmission line and a variable capacitor, another end of the variable capacitor being connected to the ground conductor; and
adjusting means capable of changing an electric length, in the first and second resonators and the coupling portion;
wherein a pass band width is able to be changed by changing a ratio of electric transmission length of the coupling portion to electric transmission lengths of transmission line including the coupling portion, and the first and second resonators.
The object and advantages of the invention will be realized and attained by means of the elements and combinations particularly pointed out in the claims.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and are not restrictive of the invention, as claimed.
The variable capacitors C1 and C2 are able to provide impedance matching with external. The inter-stage variable capacitor Cm forms attenuation poles on both sides of the pass band to make steep the shape of the pass band. The electric lengths of the first variable transmission line L1, second variable transmission line L2, and coupling portion variable transmission line LC1 are (λ/4)−x, (λ/4)−x, and (λ/4)+x, respectively. The variable filter passes a high frequency signal having a wave length of λ from the input terminal IN to output terminal OUT.
A high frequency signal input from the input terminal IN passes through an impedance adjusting capacitor C1, thereafter propagates to the transmission line L1 of the first branch portion, and the transmission line LC1 of the coupling portion, and is reflected at the open end of the transmission line LC1. The reflected high frequency signal propagates the transmission line LC1 reversely, and reenters the transmission line L1 from the coupling portion. The reentered high frequency signal is reflected at the C1 side end of the first transmission line L1 to propagate the transmission line L1 reversely. Namely, the state similar to the initial state resumes. Similar operations are repeated thereafter. At least a portion of the high frequency signal propagates the transmission line LC1 reversely enters the second transmission line L2 of the second branch portion. If the transmission lines have the above-described electric lengths, almost all the high frequency signal having a wave length of λ is supplied to the second transmission line.
As illustrated in
The movable electrode ME is formed on a dielectric substrate 20, and is supported by a cantilever structure CL made of, e.g., copper. It may be considered that the top end portion of the cantilever CL constitutes the movable electrode ME. This structure may be formed by a plating process using a resist pattern with three dimensional structure, or by two plating processes using an opening for defining an external shape. A driving electrode DE is formed on the dielectric substrate 20 under the movable portion of the cantilever CL. The driving electrode may be formed at the same time when the extending portion of the transmission line is formed. The driving electrode may be formed of different metal material from the material of the transmission line in a different process. In this case, another process such as sputtering may be used.
The dielectric substrate 20 has such structure that a conductive metal layer 22 made of Ag or the like is formed on a ceramics layer 21 and another ceramics layer 23 is formed on the conductive metal layer 22. This structure may be formed by laminating a ceramics green sheet layer, a conductive layer (wiring layer), and a ceramics green layer in position alignment and sintering the lamination. The ceramics layer is further formed with metal vias for interlayer connection, and a high impedance resistor via for preventing leakage of a high frequency signal to a DC bias path. The dielectric constant of ceramics material may be selected in a range from about 3 to about 100. Via conductors are buried under the support portion of the cantilever CL, and under the drive electrodes DE. The cantilever CL is connected to the ground layer 22, and the drive electrode DE is connected to a terminal 26 formed on the bottom surface of the dielectric substrate 20 via a through via conductor 25. Pads for inputting and outputting an RF signal and a DC drive signal may be formed on the bottom surface of the dielectric substrate. These pads are connected to the structures on the substrate surface or wirings in the substrate via metal vias and high impedance resistor vias in the substrate.
In the structure illustrated in
The MEMS variable capacitor is not limited to a cantilever structure. A variety of structures are possible.
It is seen from these graphs that the center frequency and band width of the pass band are able to be controlled by changing the coupling capacitances of the transmission lines L1, L2, and LC1 of the circuit of
It is possible to adjust both the center frequency and pass band width of a pass band.
In the first embodiment, the electric length of the coupling portion transmission line LC1 is (λ/4)+x having a long physical length of the transmission line. It is preferable if a more compact structure is possible.
A glass epoxy substrate may be used in place of a ceramics substrate. All examples and conditional language recited herein are intended for pedagogical purposes to aid the reader in understanding the invention and the concepts constituted by the inventor to furthering the art, and are to be construed as being without limitation to such specifically recited examples and conditions, nor does the organization of such examples in the specification related to a showing of the superiority and inferiority of the invention. Although the embodiments of the present invention have been described in detail, it should be understood that the various changes, substitutions, and alterations could be made hereto without departing from the spirit and scope of the invention.
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www.wordsense.eu : Accessed on Apr. 4, 2014: Definition of the term “Inter-stage”. |
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D. Peroulis et al, “Tunable Lumped Components with Applications to Reconfigurable MEMS Filters”, 2001 IEEE MTT-S Digest, 2001, pp. 341-344. |
E. Fourn et al, “MEMS Switchable Interdigital Coplanar Filter”, IEEE Trans. Microwave Theory Tech., vol. 51, No. 1, Jan. 2003, pp. 320-324. |
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