Patent Application
20150101657
The present invention relates to a solar cell and, particularly, to a solar cell design incorporating multiple quantum wells.
Semiconductor solar cells, such as indium gallium nitride (InGaN) cells, have the potential to improve the efficiency of existing solar capture technology. InGaN, in particular, shows great promise as a solar cell semiconductor material due to its tuneable direct bandgap which can vary from about 0.67 eV to about 3.4 eV as the indium content in the InxGa1-xN layer changes from 0.0 to 1.0 and thereby demonstrates absorption across almost the entire solar spectrum. InGaN possesses further useful properties such as a high carrier mobility, high saturation velocity and reasonable resistance to high temperatures and radiation.
Typically, in forming such solar cells, GaN layers will be employed as the base or underlying epitaxial layer on which, relatively high indium content InGaN layers are grown to enable the desired absorption efficiency to be achieved. One problem with this approach is the high strain which develops due to the large lattice mismatch between InxGa1-xN and GaN which can lead to undesirable consequences such as phase separation and misfit dislocations. This makes the growth of relatively thick InGaN layers, which would be useful for increasing absorption of solar energy, a difficult approach in practice.
One solution which has been proposed is the use of multiple quantum wells (MQW) within the structure. Each quantum well (QW) is a very thin layer of semiconductor material which demonstrates a low bandgap and is sandwiched between two barrier layers of higher bandgap. The use of multiple quantum wells is a viable, approach when dealing with semiconductor materials, such as InGaN, which have high optical absorption coefficients and therefore very thin layers of the material may provide a sufficient level of absorption.
The use of these low dimensional multiple quantum wells of, for example, InGaN, enables high quality crystalline layers to be formed by comparison to thicker InGaN layers and so interlayer strain and phase separation are greatly reduced while providing the further benefit of quantized energy levels.
However, to date, prior art examples of the use of multiple quantum wells in solar cells have suffered from less than optimal light absorption as well as significant polarization-related charges thereby resulting in relatively low energy conversion of sunlight to electrical energy.
U.S. patent publication no. 2011/0220190 proposes the use of a graded buffer layer in a solar cell, which can comprise InGaAs, GaAs, AlGaAs, InGaP, AlGaInP and AlGaInAs. These materials are used for group III-V (multi-junction) solar cells, in which the group V elements are As and/or P.
U.S. patent publication no. 2011/0197956 describes the use of layers comprising an amorphous SiGe layer, or a mixed layer of a-Si and μc-Si, or a mixed layer of a-Si and poly-Si as a transition layer or a tunnelling junction between a large bandgap light absorption layer, such as a-Si, and a small bandgap light absorption layer, such as c-Si. It contemplates that the transition layer may have a gradually varying bandgap achieved, for example, by continuously changing the hydrogen content in a process gas during film formation to thereby change the crystallinity of the Si layer. For example, a layer with a-Si (crystallinity=0%) gradually varied into μc-Si (crystallinity=60 to 100%).
US2009/0255580 describes the use of quantum dots of different size in quantum dot solar cells. Quantum dot solar cells and quantum well solar cells are treated separately in the industry due to the differing structure meaning the drawing of comparisons is unreliable. Thus, for non-quantum dot solar cells this document offers little assistance.
WO 2000/077861 describes a device comprising a number of different wavelength-selective active layers arranged in a vertical stack with monotonically decreasing bandgaps. Within each layer, the bandgap remains the same, while in the subsequent layer underneath the bandgap decreases. The contacts are made separately on the lateral sides of each layer. The document mentions the use of these thin film layer structures for possible solar cell applications but with the primary emphasis on imagery applications. It mentions that the use of quantum wells with ultra-wide bandgap semiconductors or insulators would not enable the necessary ohmic contacts across the layers in the stack. This document therefore does not provide a satisfactory solution to the problems discussed above.
There is a need for a solar cell which can harness the advantages of multiple quantum wells while improving light absorption and therefore overall efficiency.
In one broad form, the present invention resides in a solar cell comprising a multiple quantum well active region wherein the composition of each quantum well layer differs from that of neighbouring or consecutive quantum well layers.
In a first aspect, although it need not be the only or indeed the broadest form, the invention resides in a solar cell comprising:
wherein, consecutive quantum well layers have different bandgap values due to variations in the thickness of the layers and/or their having differing compositions of at least one of their constituent elements.
Preferably, the bandgap of consecutive quantum well layers decreases on moving away from a surface of the solar cell upon which, in use, sunlight will be incident.
Suitably, the constituent element may be at least two group II to group VI elements.
When the constituent element is a group II element it may be selected from the group consisting of zinc, magnesium, beryllium and cadmium.
When the constituent element is a group III element it may be selected from the group consisting of boron, aluminium; gallium and indium.
When the constituent element is a group IV element it may be selected from the group consisting of carbon, silicon, germanium and titanium.
When the constituent element is a group V element it may be selected from the group consisting of nitrogen, phosphorus, arsenic and antimony.
When the constituent element is a group VI element it may be selected from the group consisting of oxygen, tellurium, selenium and sulphur.
The adjacent quantum well layers may present differing quantized energy levels.
Preferably, the content of at least one group II to VI element in consecutive quantum well layers increases on moving further away from an extent of the solar cell upon which, in use, sunlight is incident.
It will be appreciated that while the content of one group II to VI element in consecutive quantum well layers increases on moving further away from an extent of the solar cell upon which, in use, sunlight is incident, another group II to VI element content may decrease. For example, if the quantum well layers were comprised of InGaN then the indium content may increase and the gallium content decrease on moving further away from an extent of the solar cell upon which, in use, sunlight is Incident. Thus the overall balance of group II to VI elements is maintained.
Alternatively or in combination, the thickness of consecutive quantum well layers decreases on moving further away from an extent of the solar cell upon which, in use, sunlight is incident.
In one embodiment, the composition of individual quantum well layers is substantially constant throughout their extent.
In an alternative embodiment, the composition of individual quantum well layers may vary in a continuous fashion on proceeding through the quantum well layer from a region contacting one adjacent barrier layer to a region contacting the other adjacent barrier layer.
There may be overlap between the elemental composition of portions of consecutive quantum well layers but it will be understood that the general trend is that the relative content of the at least one constituent element will increase, and the relative content of an associated or companion element will decrease, in consecutive quantum well layers on moving away from that quantum well layer closest, in use, to the incident sunlight in such a way that the bangaps of the quantum well layers decrease as they move further away from the sun facing layer.
Suitably, the quantum well layers comprise two or more constituent elements and it is the relative content of at least two of these elements which changes between different layers.
Preferably, the at least one constituent element which is differing in content between quantum well layers is a group III element selected from the group consisting of indium, aluminium and gallium.
More preferably, the group III element which is differing in content between quantum well layers is indium.
The material forming the quantum well layers is preferably a group II to VI nitride, arsenide or phosphide.
Preferably, the material forming the quantum well layers is a group III nitride, arsenide or phosphide.
More preferably, the material forming the quantum well layers is selected from the group consisting of indium gallium nitride, aluminium indium gallium nitride, indium aluminium nitride, aluminium gallium nitride, indium gallium arsenide, indium gallium arsenide nitride, aluminium indium gallium arsenide nitride indium gallium phosphide, indium gallium arsenide phosphide, indium arsenide phosphide, indium aluminium arsenide and indium aluminium gallium arsenide.
Even more preferably; the material forming the quantum well layers is indium gallium nitride.
In a preferred embodiment wherein the quantum well layers are formed from indium gallium nitride, the quantum well layer having the highest bandgap and being located at the end of the solar cell closest to the surface adapted to receive sunlight will be the quantum well layer with the lowest indium content.
Suitably, each quantum well layer is less than 15 nm, preferably less than 10 nm, more preferably less than 7 nm thick.
Preferably, each quantum well layer is between 1 to 5 nm thick, more preferably about 3 nm thick.
The barrier layers may be formed from the same or different materials to the quantum well layers.
Preferably, the barrier layers comprise material selected from the group consisting of gallium nitride, aluminium nitride, indium gallium nitride, indium aluminium nitride and aluminium indium gallium nitride such that the bandgaps of the barrier layers are higher than the bandgap of the sandwiched quantum well layer.
In one embodiment the solar cell further comprises one or more blocking layers.
Preferably, the one or more blocking layers will have a, higher bandgap than the quantum well or barrier layers.
Suitably, for a p-i-n InGaN/GaN solar cell a p-AlGaN layer is present before the p-GaN layer and an n-AlGaN layer after the n-GaN layer.
Preferably, the solar cell is grown on a substrate selected from the group consisting of sapphire, zinc, glass and other silicon based substrates. Patterned sapphire substrates are particularly preferred.
In a second aspect the invention resides in a method of forming a solar cell comprising a multiple quantum well structure, the method including the steps of:
to thereby form a solar cell comprising a multiple quantum well structure.
In one preferred embodiment, the content of the at least one group II to VI element in consecutive quantum well layers increases on moving further away from an extent of the solar cell upon which, in use, sunlight is incident.
In one embodiment, the at least one group II to VI element content within individual quantum well layers is substantially constant.
In an alternative embodiment, the at least one group II to VI element content within individual quantum well layers may vary in a continuous fashion on proceeding through the quantum well layer from a region contacting one adjacent barrier layer to a region contacting the other adjacent barrier layer.
The method may further include the step of forming a junction layer on a substrate and subsequently forming the first barrier layer or quantum well layer upon the junction layer.
The method may further include the step of forming a further junction layer on top of the final quantum well layer to be formed.
In an alternative embodiment, the method may include the step of forming the multiple quantum well structure such that the content of the at least one group II to VI element in consecutive quantum well layers decreases on moving further away from an extent of the solar cell upon which, in use, sunlight is incident.
In this alternative embodiment, the method may further include the step of separating the multiple quantum well structure from an underlying substrate and reversing the structure such that the content of the at least one group II to VI element in consecutive quantum well layers increases on moving further away from an extent of the solar cell upon which, in use, sunlight is incident.
The solar cell of this alternative embodiment may be formed on a transparent substrate.
In a third aspect the invention resides in a solar cell formed by the method of the second aspect.
In a fourth aspect the invention resides in use of a solar cell of the third aspect.
Further features of the present invention will become apparent from the following detailed description.
Throughout this specification, unless the context requires otherwise, the words “comprise”, “comprises” and “comprising” will be understood to imply the inclusion of a stated integer or group of integers but not the exclusion of any other integer or group of integers.
In order that the invention may be readily understood and put into practical effect, preferred embodiments will now be described by way of example with reference to the accompanying figures wherein:
This invention is predicated on the finding that an improved multiple quantum well solar cell can be achieved by ensuring the bandgap of each quantum well thin layer is not uniform compared with other such layers. It has been found that a gradation of the bandgap by varying the content of at least one, and typically at least two, group II to VI elements, such as the indium and gallium relative contents within InGaN, within consecutively formed quantum wells provides advantages in at least an increase in absorption across a greater range of the available solar spectrum. The same advantages may be obtained by instead, or in combination, varying the thickness of consecutive quantum well layers.
The semiconductor materials which may be employed with the present solar cells, and hence the nature of the layers which can be formed, are not especially limited. Although the embodiments discussed herein generally employ InGaN as the QW material and GaN for the barrier and p- and n-junction layers, the utility of the present invention is not so limited.
In the embodiment shown, an i-InGaN semiconductor material forms the QW layers 40 and it will be noted that the composition of each layer 40 is different from that of an adjacent layer 40. A second junction layer 50 is a p-GaN layer and results in the active region being located between the first junction layer 20 and the second junction layer 50. Table 1 indicates that the p-GaN layer is approximately 150 nm thick with a doping concentration of 1e18 per cm3.
In the embodiment represented by
The thickness of each quantum well layer is less than 15 nm, preferably less than 10 nm, more preferably less than 7 nm thick.
Preferably, each quantum well layer is between 1 to 5 nm thick, more preferably about 3 nm thick.
Although not shown in
It is preferred that the QW layer 40 closest to the incoming sunlight, in the case of Table 1 this is layer number 31, should have a higher bandgap and therefore lower indium content than successive QW layers 40. The indium content of the QW layer closest to the incoming sunlight may be between 0% to 100%, preferably between 0.5% and 50%, more preferably between 1% to 40%. Successive QW layers may have an indium content which increases incrementally from this value up to a desired maximum.
The QW layers 40 may be formed from any suitable semiconductor material comprising two or more group II to VI elements. Preferably, at least one of the group II to VI elements is a group III element selected from the group consisting of indium, aluminium and gallium and another may be a group V element selected from the group consisting of nitrogen, phosphorus, arsenic and antimony.
The material forming the QW layers 40 is preferably a group III nitride, group III arsenide, group III arsenide nitride or group III arsenide-phosphide.
Preferably, the material forming the QW layers 40 is selected from the group consisting of indium gallium nitride, aluminium indium gallium nitride, indium aluminium nitride, aluminium gallium nitride, indium gallium arsenide, indium gallium arsenide nitride, aluminium indium gallium arsenide nitride indium gallium phosphide, indium gallium arsenide phosphide, indium arsenide phosphide, indium aluminium arsenide and indium aluminium gallium arsenide.
More preferably, the material forming the quantum well layers is indium gallium nitride. A discussed above, InGaN shows great promise as a solar cell semiconductor material due to its tuneable direct bandgap and absorption across almost the entire solar spectrum as well as demonstrating further useful properties such as a high carrier mobility, high saturation velocity and reasonable resistance to high temperatures and radiation.
Differing embodiments of the MQW solar cell structures may present a wide range in the actual number of quantum wells present. Any number of individual quantum wells between 2 to about 150 may be appropriate so long as the resulting structure is capable of appropriate absorption of sunlight. Preferably, between about 5 to about 100 quantum well layers may be present in the solar cell, more preferably, between about 5 to about 80.
Each barrier layer 30 may be formed from the same or different materials as the QW layers 40. For example, the barrier layers 30 may be formed from gallium nitride, aluminium nitride, indium gallium nitride, indium aluminium nitride or aluminium indium gallium nitride so that the bandgaps of the barrier layers are higher than the bandgap of the sandwiched quantum well layer. Preferably, the barrier layers are gallium nitride layers.
The barrier layers 30 may be between 3 nm to 0.100 nm thick, preferably between 7 nm to 50 nm thick, more preferably between 10 nm to 30 nm thick and yet more preferably between 10 to 20 nm thick.
The barrier layers 30 should have a higher bandgap than the QW layer 40 which is sandwiched in between them. This may be achieved by the choice of material and/or thickness of the barrier layers 30. Otherwise the nature of the barrier layers 30 is not particularly restricted.
Although, the embodiment of
The advantage offered by the design of
This problem can be avoided by growing the various layers of the solar cell 100 in the order indicated by
As was mentioned in relation to
In an alternative embodiment to those shown in
For example, the lowest indium content QW layer 40 of
There may be overlap between the group II to VI element content of portions of consecutive QW layers 40 but it will be understood that the general trend is that the overall content of the group II to VI element will increase in consecutive quantum well layers, in the manner shown in
This embodiment comprising graded QW layers will provide a solar cell with a useful range of absorption due to the variation in relative indium and gallium content achieved across the MQWs. The nature of the individual layers and the ability to swap junction layers etc is just as applicable to this embodiment as to those discussed in relation to
The variation in the bandgap of the individual quantum well layers, which is key to the present invention, may alternatively be achieved by forming consecutive quantum well layers of the same composition and varying the thickness of those layers. This can be achieved by control of growth conditions and times.
The variation in the bandgap of the individual quantum well layers may also be achieved by varying the composition as well as the thickness of consecutive quantum well layers.
Other variations within the embodiments discussed herein may be achieved. For example, the group II to VI element content within the barrier layers 30 or 130 does not necessarily need to remain constant throughout the solar cell 10 or 100. Thus, the barrier layers 30 and 130 of
In one embodiment, the indium content within each individual barrier layer 30 and 130 is constant but will increase, and hence the gallium relative content decrease, in a stepwise manner in subsequent barrier layers 30 and 130 on moving further away from the incident sunlight surface. The barrier layer 30 or 130 having the lowest indium content should be closest to the incident sunlight surface and overall their bandgaps should be higher than those of quantum well layers.
In an alternative embodiment, the indium content within each barrier layer 30 or 130 may vary across its extent in exactly the manner described for individual QW layers 40 and 140. The variation will likely be across a small range of about 0.5 to 2.0% and subsequent barrier layers 30 or 130 may demonstrate an overlap in indium content but the overall trend will be towards higher relative indium contents on moving to barrier layers 30 and 130 further from the sunlit surface. A variation in relative indium content across the barrier layers 30 or 130 may assist with improved absorption characteristics of the solar cell 10 or 100 and may aid in reducing problematic polarisation issues.
The only limitation in the variation of the relative indium content within barrier layers 30 and 130, both in a stepwise and a graded fashion, is that the bandgap of any barrier layer 30 or 130 should be higher than that of any of the QW layers 40 or 140. Thus, if the relative indium content of the QW layers 40 or 140 is varied from a minimum of 15% to a maximum of 30% then the relative indium content of the barrier layers 30 or 130 can only be varied from 0 to 14.99%.
In a further embodiment, the first and second junction layers, i.e. the p- and n-layers which in
In yet a further embodiment, the solar cell structures described in any of the above embodiments may include some strain balancing QW layers, which will aid in reducing at least a portion of the accumulated strain in the structure. For example, the InGaN/GaN MQW solar cell structures may contain some AlGaN or AlN thin layers, which can present an opposite strain compared to that resulting from InGaN when grown on GaN. These AlGaN or AlN thin layers will therefore help decrease the overall strain of the structure and may improve the performance of the solar cells. The structures may also comprise other types of strain balancing thin or QW layers.
In one preferred embodiment, the solar cell structure may further comprise one or more blocking layers. The blocking layers may be formed before or after the junction layers.
Preferably, the blocking layers will have bandgaps higher than the QW layers and barrier layers and should be capable of reducing or blocking the flow of opposite/undesirable carriers to the p- or n-contacts. For example, one blocking layer may block or reduce the flow of electrons to a p-contact of a solar cell and another blocking layer may block or reduce the flow of holes to an n-contact of a solar cell.
The blocking layers may be made from AlGaN, InAlGaN, AlN and other similar materials which may optionally be suitably doped.
Suitably, for a p-i-n InGaN/GaN solar cell a p-AlGaN layer is present before the p-GaN layer, which blocks or reduces the flow of electrons to the p-GaN layer and an n-AlGaN layer which blocks or reduces the flow of holes to the n-GaN layer is present after the n-GaN layer.
It has been found that blocking layers can improve the efficiency of a solar cell, as is demonstrated in the results described herein. In an ideal solar cell, only holes will flow to a p-contact and electrons will flow to an n-contact. However, the reality is that some electrons will inevitably flow to the p-contact and some holes will flow to the n-contact which results in a loss of solar cell efficiency. The present inventor has found that, in a p-i-n InGaN/GaN based solat cell such as that described in
It has also been realized that, as the indium content within InGaN QW layers increases, the overall strain in the structure increases and hence the quality of the grown layers deteriorates leading to reduced efficiency of the solar cell. To mitigate this problem, in a further preferred embodiment, the present solar cells may be grown on a patterned sapphire substrate (PSS) instead of plain sapphire substrate, which were used in the generation of solar cells PV A and PV B. A new structure (PV C) containing exactly the same order and content of layers as in PV B (as described above) was grown on a PSS. The structure is represented in Table 3. It will be understood that the number of layers (N) shown in Tables 2 and 3 is not considered limiting and is simply by way of example. The number of layers in a cell may be more or less depending on a number of factors including manufacturing concerns, specific application etc. This would be understood by the skilled addressee who could ascertain, without undue experimentation, the preferred number of layers.
The substrate on which the solar cell structures are grown may be chosen from a range of available substrates including glass, silicon and sapphire all of which may be modified or un-modified. Modified substrates may be doped appropriately. A patterned sapphire substrate is particularly preferred.
Both structures PV B and PV C showed photovoltaic effects indicating that varying band gap solar cells are viable options to achieve high energy conversion efficiency and address or mitigate some of the issues that currently plague InGaN/GaN solar cells.
Thus, it has been found that a solar cell comprising InGaN quantum well layers having varying bandgaps is particularly and unexpectedly advantageous in terms of offering an increased absorption of light within the active layer, a reduced overall strain within the structure and reduced detrimental polarisation effects within p-i-n structures (Ga-faced GaN/InGaN structures) along with improved advantageous polarisation effects in n-i-p structures (Ga-faced GaN/InGaN structures).
Therefore, in one highly preferred embodiment a solar cell comprising:
wherein, consecutive quantum well layers have different bandgap values due to variations in their indium and gallium content and the indium content of consecutive quantum well layers increases on moving away from a surface of the solar cell upon which, in use, sunlight will be incident.
The comments made in regard to
In a second aspect the invention resides in a method of forming a solar cell comprising a multiple quantum well structure, the method including the steps of:
to thereby form a solar cell comprising a multiple quantum well structure.
In one preferred embodiment, the content of the at least one group II to VI element in consecutive quantum well layers increases on moving further away from an extent of the solar cell upon which, in use, sunlight is incident.
In one embodiment, the at least one group II to VI element content within individual quantum well layers is substantially constant.
In an alternative embodiment, the at least one group II to VI element content within individual quantum well layers may vary in a continuous fashion on proceeding through the quantum well layer from a region contacting one adjacent barrier layer to a region contacting the other adjacent barrier layer.
The method may further include the step of forming a junction layer on a substrate and subsequently forming the first barrier layer or quantum well layer upon the junction layer.
The method may further include the step of forming a further junction layer on top of the final quantum well layer to be formed.
In an alternative embodiment, the method may include the step of forming the multiple quantum well structure such that the content of the at least one group II to VI element in consecutive quantum well layers decreases on moving further away from an extent of the solar cell upon which, in use, sunlight is incident.
In this alternative embodiment, the method may further include the step of separating the multiple quantum well structure from an underlying substrate and reversing the structure such that the content of the at least one group II to VI element in consecutive quantum well layers increases on moving further away from an extent of the solar cell upon which, in use, sunlight is incident.
The solar cell of this alternative embodiment may be formed on a transparent substrate.
The method may further include the step of forming one or more blocking layers, as described herein.
The solar cells within the scope of the present invention may be formed using a number of standard deposition methods including but not necessarily limited to metal organic chemical vapour deposition (MOCVD), remote plasma chemical vapour deposition (RPCVD) and plasma-assisted molecular beam epitaxy (PAMBE). Key parameters in the control of indium content in successive quantum wells are the growth temperature, which should be lowered for layers with increasing indium content, and the indium flux or flow rate of trimethyl indium reagent and the gallium flux or flow rate of trimethyl gallium reagent.
In a highly preferred embodiment, the quantum well layers comprise InGaN. It may be preferable that the quantum well layer with the lowest indium content is grown first and consecutive quantum well layers are then grown with increasing indium content. This allows the use of higher temperatures for low indium content layers which are less likely to degrade in such temperatures. The use of higher temperatures reduces lattice mismatch and therefore strain in the solar cell.
In a third aspect the invention resides in a solar cell formed by the method of the second aspect.
As will be apparent from the results described herein, such solar cells provide distinct functional advantages over those of the prior art.
In a fourth aspect the invention resides in use of a solar cell of the third aspect.
It will be appreciated that the various features and embodiments of the present invention, referred to in individual sections above apply, as appropriate, to other sections, mutatis mutandis. Consequently features specified in one section may be combined with features specified in other sections, as appropriate.
A solar cell (PV A) was grown according to the structure described in Table 1 and represented in
This cell was then tested and shown to have an energy conversion efficiency (η) of about 1.4%, as is shown in
A photovoltaic simulation of this structure was also carried out using SCSim software developed by Semiconductor Technology Research Inc. (STR). The simulation results showed the theoretical fill factor (FF) for this structure to be about 72% which is higher than the FF of about 43% calculated for an MQW solar cell structure having quantum well layers which each have a fixed indium content of 15% but otherwise presenting the same cell structure as shown in
In a further example, a solar cell similar to that shown in
The variation in thickness of the quantum well layers may also be employed in combination with variations in the composition to achieve the required bandgap variation.
A solar cell (PV B) was grown on a sapphire substrate according to the structure described in Table 2. AlGaN blocking layers were laid down with a p-AlGaN layer grown before the p-GaN layer and an n-AlGaN layer grown after the n-GaN layer. A solar cell simulation was carried out for this structure and the results show that the energy conversion efficiency in this varying band gap solar cell structure is 22% improved when compared to a structure in which the indium percentage in the QW layers was constant at an average indium percentage of 17.5% while keeping all the other parameters the same.
A solar cell (PV C) was grown on a patterned sapphire substrate according to the structure set out in Table 3. The use of the patterned sapphire substrate was the only structural difference between PV B and PV C.
The I-V characteristics of samples PV B and PV C are shown in
Although not wishing to be bound by any particular theory, it is believed that the effect demonstrated experimentally, above, may be due, at least in part; to improved absorption across the solar spectrum and thereby the higher generation of electron-hole pairs as well as a reduced incidence of polarization-related issues due to the particular solar cell design.
Throughout the specification the aim has been to describe the preferred embodiments of the invention without limiting the invention to any one embodiment or specific collection of features. It will therefore be appreciated by those of skill in the art that, in light of the instant disclosure, various modifications and changes can be made in the particular embodiments exemplified without departing from the scope of the present invention.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2011903944 | Sep 2011 | AU | national |
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/AU2012/001152 | 9/21/2012 | WO | 00 |
