This application claims priority from Indian patent application No. 1041/Del/2004, filed Jun. 4, 2004, which is incorporated herein by reference.
Embodiments of the present invention generally relate to Voltage Controlled Oscillators (VCO) and in particular relate to a VCO buffer circuit having low supply noise sensitivity for providing a stabilized output.
A VCO-buffer circuit is mainly used as interface between a Voltage Controlled Oscillator (VCO) and counters in a PLL (Phase Locked Loop). The purpose of the VCO-buffer circuit is to shift the level of the VCO output voltage to a level suitable for the counters operation so as to adjust the duty cycle of the counters. Here the VCO-buffer circuit for Ring VCO (hereinafter referred to as RING/VCO) is used as an interface.
One conventional VCO provides a VCO buffer cell that comprises a differential pair of transistors and a current mirror circuit. The differential pair of transistors receives input terminals and generates a differential voltage swing in response to the input signals. The current mirror circuit is operably coupled to the pair of transistors and is configured to receive a first external reference current and provide a mirrored current to an active one of the transistors. The VCO circuit provides high-speed consistent output but uses additive circuitry for the purpose and therefore causes an increase in the overall device area, which is undesirable in area specific Voltage Controlled Oscillators.
Schematics of conventional VCO and VCO buffer circuits are shown in
The following symbols are used hereafter for the analysis of the VCO buffer circuit:
The nodes of the RING are loaded by a stage as shown in
Case (1) when VIN=0; Vo1h=DVDD−Vthp 1.1
Case (2) when VIN=Vm;
Vo1l=(DVDD−Vthp)+((2*βs1n1)/βs1p1)*(Vm−Vthn)−((2*βs1n1)/βs1p1)*(Vm−Vthn)*sqrt(1+(βs1n1*(Vm−Vthn))/(βs1p1*(DVDD−Vthp))) 1.2
where, βs1n1=Kn*(W/L)s1n1
andβs1p1=Kp*(W/L)s1p1.
If the digital supply changes by a small amount ΔDVDD, then the corresponding change in Vo1l is given by:
ΔVo1l=ΔDVDD(1−1/sqrt((1+(βs1p1*(DVDD−Vthp))/(βs1n1*(Vm−Vthn))) 1.3
If the digital supply changes by a small amount ΔDVDD, then the corresponding change in Vo1h is given by:
ΔVo1h=ΔDVDD 1.4
For the circuit shown in
Case (1) when VIN=0; Vo2h=DVDD 1.5
Case (2) when VIN=Vm; Vo2l=0 1.6
If the digital supply changes by a small amount ΔDVDD, then there is no change in Vo2l. The change in Vo2h is given by:
ΔVo2h=ΔDVDD 1.7
Case 1: When IN1=0, IN2=Vm;
Case 2: When IN1=Vm, IN2=0;
Case 3:When IN1=Vm, IN2=Vm;
Case 4:When IN1=0, IN1=0.
Case (1): In this case the voltage at node VBUF_MIR_OLD is Vo1h (equation 1.1) that causes PMOS MP2 to be switched off. Further, since IN2=Vm, the node VBUF_OLD discharges to zero volt.
Case (2) In this case the voltage at node VBUF_MIR_OLD is Vo1l (equation 1.2) that causes PMOS MP2 to be switched on. Further, since IN2=0 volt, the node VBUF_OLD charges to DVDD.
Case (3) In this case the voltage at VBUF_MIR_OLD node is Vo1l (equation 1.2) that causes both the PMOS MP2 and NMOS MN2 to be switched on and the voltage at VBUF_MIR_OLD is determined by the relative sizes of the transistors MP2 and MN2.
Case (4) In this case both PMOS MP2 and NMOS MN2 are switched off. The voltage at node VBUF_MIR_OLD is determined by the value of VBUF_MIR_OLD, before IN1 and IN2 both become zero volt.
As shown in
The capacitances by which these nodes are being loaded (by the buffer only) are the gate to source capacitance (Cgs) and the gate to drain capacitance (Cgd) of the transistors MN1, MN2 and MN3. During each oscillation cycle IN1 or IN2 or IN3 oscillate from zero volt to Vm and then again to zero volt (Loads are being charged and discharged). Here, charging and discharging of the Gate to Drain Capacitances of transistors MN1, MN2 and MN3 are discussed, because the amount of charge on these capacitors depends upon the value of DVDD.
Assuming the digital supply to be at DVDD, the VCO-buffer circuit operates for the following input-output parameters:
When IN1=Vm and node VBUF_MIR_OLD at Vo1l (equation 1.2) charge on drain to gate capacitor of MN1 is given by:
Qfcgd=Cgd*(Vo1l−Vm) 1.9
If the oscillation frequency is fo then the average current per cycle used to charge this capacitor is given by:
The direction of this current is through drain to gate capacitor of transistor MN1into the RING. Further, the current directly adds to the current going into the RING and depending on the amount of current going into the RING the oscillation frequency of the VCO is fixed.
Assuming that the digital supply changes from DVDD to DVDD+ΔDVDD, then it is observed that the average current by which the capacitor is being charged each cycle changes from (fo/2)*Cgd(Vo1l−Vm−Vo1h+0) to (fo/2)*Cgd(Vo1l+ΔVo1l−Vm−Vo1h−ΔVo1h+0). The change in average charging current lavch1 is given by:
Δlavch1=(fo/2)*Cgd(ΔVo1l−ΔVo1h) 1.11
Applying similar analysis to charging of drain to gate capacitor of transistor MN2, which is driven by node IN2 we can say that average current by which this capacitor is being charged each cycle changes from (fo/2)*Cgd(Vo2l−Vm−Vo2h+0) to (fo/2)*Cgd(Vo2l−Vm−Vo2h−ΔVo2h+0).The change in average charging current lavch2 is given by:
Δlavch2=(fo/2)*Cgd(−ΔVo1h) 1.12
From equations 1.11 and 1.12 we note that |Δlavch2|>>Δlavch1.
This implies that the current that is going into the RING for a particular control voltage increases by Δlavch1+Δlavch2. Since both the quantities Δlavch1 and Δlavch2 are negative we can also say that the current that is going into the RING for a particular control voltage reduces by |Δlavch1|+|Δlavch2|. As a result the oscillation frequency reduces and when there is negative jump on the digital supply it can be proved by a similar argument that the oscillation frequency increases. A similar analysis can be done for the discharging current of the gate to drain capacitances of the transistors loading the RING.
The noise on the digital supply causes the oscillation frequency of the RING to vary which is mainly due to the changes in the charging and discharging currents of the gate to drain capacitances of the transistors loading the RING, which is undesirable for the operation of the VCO and VCO-buffer interface.
Thus, a need is felt for VCO buffer circuit that reduces the variation in oscillation frequency of the ring oscillator.
According to one embodiment of the present invention, an improved VCO buffer reduces supply noise sensitivity of frequency of oscillations of the VCO.
Other embodiments of the present invention are directed to improving the phase noise performance of the VCO.
According to one embodiment of the instant invention, a VCO buffer circuit comprises:
Further, according to another embodiment of the present invention a method providing a VCO buffer circuit comprises steps of:
Thus, embodiments of the instant invention provide an improved VCO buffer with low supply noise sensitivity to thereby provide improved phase noise performance of the VCO.
Embodiments of the invention will now be described with reference to the accompanying drawings.
The following discussion is presented to enable a person skilled in the art to make and use the invention. Various modifications to the embodiments will be readily apparent to those skilled in the art, and the generic principles herein may be applied to other embodiments and applications without departing from the spirit and scope of the present invention. Thus, the present invention is not intended to be limited to the embodiments shown, but is to be accorded the widest scope consistent with the principles and features disclosed herein.
The VCO buffer of the instant invention comprises of a symmetrical current mirror structure that is formed by connecting two current mirror circuits to the first current mirror circuit, as shown in
The first current mirror circuit is formed by MP11 and M1 transistors, that generate a first voltage at the node VBUF_PMIR1_NEW. The first current mirror configuration is coupled to the first input node IN1 through NMOS MN11. A second current mirror circuit is formed by NMOS transistors M0 and M2 and is coupled to the output of the first current mirror circuit for generating a second voltage at node VBUF_NMIR_NEW, which is further connected to a third current mirror circuit formed by the PMOS transistors M3 and MP21 to thus form a symmetrical current mirror circuit configuration. This configuration of current mirrors generates a third voltage at the node VBUF_PMIR2_NEW. It can be clearly observed therefore that the supply sensitivity is minimized because the nodes IN1 and IN2 of the ring are now loaded by two identical current mirror stages. Finally, the cumulative output of the three current mirror stages is produced at the node VBUF_NEW.
A transistorized inverter circuit (MP44 & MN44) receives the common output of the three current mirror stages. Another inverter circuit (MP55 & MN55) is connected to the output of the inverter circuit formed by (MP44 & MN44) for buffering the output of the current mirror stages to thereby adjust the duty cycle of the Voltage Controlled Oscillator. The VCO buffer circuit is powered by DVDD and is connected to the ground at DGND.
If the oscillation frequency of the VCO is fo then the average current per cycle used to charge the drain to gate capacitors of transistors MN11 and MN22 which are driven by nodes IN1 and IN2 of the RING respectively is given by:
Assuming that the digital supply changes from DVDD to DVDD+ΔDVDD, then the change in average charging current lavch11 and lavch22 is given by:
Δlavch11=Δlavch11=(fo/2)*Cgd(ΔVo1l−ΔVo1h) 1.14
This implies that the current that is going into the RING for a particular control voltage increases by 2*Δlavch11. The value of Δlavch11 is negative, thus it can be concluded that the current that is going into the RING for a particular control voltage reduces by 2*|Δlavch11|.
Further, since |Δlavch2|>>Δlavch1, 2*|Δlavch1|<<|Δlavch1|+|Δlavch2|, the change in the current going into the RING (due to change in digital supply) for the VCO-buffer of the instant invention is much less than that for the VCO-buffer shown in
The conventional VCO buffer circuit of
It can be clearly seen from the Table 1 that the VCO buffer circuit of the instant invention reduces the supply noise sensitivity by reducing the amount of change in the charging and discharging currents of the gate to drain capacitances of the transistors loading the VCO. Thus, the VCO buffer circuit of the instant invention leads to less supply sensitivity by loading the nodes IN1 and IN2 by two identical stages to form a symmetrical current mirror configuration.
A VCO buffer as described with reference to the embodiment of
From the foregoing it will be appreciated that, although specific embodiments of the invention have been described herein for purposes of illustration, various modifications may be made without deviating from the spirit and scope of the invention.
Number | Date | Country | Kind |
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1041/DEL/2004 | Jun 2004 | IN | national |
Number | Name | Date | Kind |
---|---|---|---|
6683505 | West | Jan 2004 | B2 |
6703890 | Fukui | Mar 2004 | B2 |
7053722 | Rein et al. | May 2006 | B2 |
20030038685 | West | Feb 2003 | A1 |
Number | Date | Country | |
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20050270110 A1 | Dec 2005 | US |