Patent Application
20130038175
The present invention relates to a vibration power generation device, obtained by the MEMS (micro electro mechanical systems) technology, for converting a vibration energy into an electric energy.
There has been known a power generating device as a kind of MEMS device configured to convert a vibration energy, derived from vibration such as movement of a car or a human, into an electric energy. Such power generating devices have been studied (refer to Patent Literature 1).
As a power generating device, Patent Literature 1 discloses a piezoelectric power generating device includes: a substrate 1; a weight section 2 provided on the substrate 1; a phosphor copper bronze sheet 3 which is joined between the substrate 1 and the weight section 2, and is configured to bend in response to a displacement of the weight section 2; and a piezoelectric power generation section 6 which is composed of laminates, each of which being composed of a piezoelectric ceramic plate 4 and electrodes 5, provided on respective surfaces of the phosphor copper bronze sheet 3, and which is configured to generate an alternating-current voltage in response to an oscillation of the weight section 2, as is shown in
PATENT LITERATURE 1:JAPANESE PATENT APPLICATION PUBLICATION No. H7-107752A.
However, when considering of applying to an apparatus, the conventional piezoelectric power generating device has a problem that the resonance frequency thereof is not designed in accordance with the frequency of environmental vibration of the apparatus.
The present invention is developed in view of the above background art, and an object is to provide a vibration power generation device which can easily adjust the resonance frequency in accordance with specific frequency of each apparatuses.
In order to achieve above object, a vibration power generation device of the present invention comprising: a frame section; a weight section provided inside the frame section; a flexure section which is joined between the frame section and the weight section, said flexure section being configured to bend in response to a vibration of the weight section; and a power generation section composed of a laminate on one surface of the flexure section, said laminate having a lower electrode, a piezoelectric layer and an upper electrode which are laminated in this order from the bottom, said power generation section being configured to generate an alternating-current voltage in response to an oscillation of the weight section, wherein a resonance frequency adjustment means is provided between the frame section and the weight section.
In this vibration power generation device, it is preferable that the resonance frequency adjustment means is composed of a support beam section which is joined between the frame section and the weight section, said support beam section being provided separately from the flexure section, and that the resonance frequency is adjusted by the variation of initial shape of the support beam section.
In this vibration power generation device, it is preferable that, in the resonance frequency adjustment means, the support beam section is formed symmetrically as to a plane containing an aligned direction of the frame section, the flexure section and the weight section and a thickness direction of the flexure section and the weight section.
In this vibration power generation device, it is preferable that the support beam section has a plurality of folded portions between the frame section and the weight section so as to form a spring structure.
In this vibration power generation device, it is preferable that, in the spring structure, the folded portion has a curvature.
In this vibration power generation device, it is preferable that, in the resonance frequency adjustment means, the resonance frequency is adjusted at a predetermined value by the variation of the length of a piece of the support beam section.
In this vibration power generation device, it is preferable that, in the resonance frequency adjustment means, the resonance frequency is adjusted at a predetermined value by the variation of the width of a piece of the support beam section.
The frame section has a length. The frame section has a first support portion at one end in the longitudinal direction thereof, and has a second support portion at the other end in the longitudinal direction thereof. It is preferable that the flexure section is placed to the first support portion. It is preferable that the flexure section supports the weight section so that the weight section is located inside the frame section.
It is preferable that the resonance frequency adjustment means is composed of a support beam section. The support beam section is formed so as to join between the frame section and the weight section.
It is preferable that the weight section has a length. The weight section has a first end at one end in the longitudinal direction thereof, and has a second end at the other end in the longitudinal direction thereof. The first end of the weight section is joined to the first support portion through the flexure section. The support beam section joins between the frame section and the second end of the weight section.
It is preferable that the support beam section has a band piece and a joining piece. The band piece extends from the second end of the weight section toward the first support portion of the frame section. The band piece has a connecting portion. The connecting portion is located between the second end of the weight section and the first support portion of the frame section. Two band pieces are formed so as to join between the connecting portion and the frame section.
It is preferable that the joining piece is formed so as to join between the connecting portion and the second support portion of the frame section.
The weight section has a width. One end in the width direction of the weight section is defined as a width directional first end. The width directional first end is separated from the frame section by a clearance. It is preferable that the band piece and the joining piece are located in the clearance.
The band piece has a first end and a second end. The second end is located at opposite side to the first end when viewed from the band piece. It is preferable that the second end of the band piece is connected to the second end of the weight section. It is preferable that one end of the joining piece is connected to the first end of the band piece, and the other end of the joining piece is connected to the second support portion of the frame section.
The weight section has a width. One end in the width direction of the weight section is defined as a width directional first end, and the other end in the width direction of the weight section is defined as a width directional second end. It is preferable that the width directional first end is separated from the frame section by a first clearance. The width directional first end is separated from the frame section by a second clearance. The support beam section is composed of a plurality of support beam sections. One of the plurality of support beam sections is located in the first clearance, and another one of the plurality of support beam sections is located in the second clearance.
The vibration power generation device of the present invention includes the resonance frequency adjustment means between the frame section and the weight section. With this configuration, the present invention can form the vibration power generation device whose resonance frequency is adjusted at a predetermined value.
A substrate 25 of this vibration power generation device is formed of an SOI substrate. The SOI substrate has a support layer 26, an insulation layer 27 and an active layer 28 in this order from the bottom. Each of the frame section 11 and the weight section 12 is mainly composed of the support layer 26, the insulation layer 27 and the active layer 28. Each of the flexure section 13 and the support beam section 20 is mainly composed of the insulation layer 27 and the active layer 28.
In the vibration power generation device, as shown in
Hereinafter, the vibration power generation device of the present embodiment is described in detail.
As shown in
As shown in
The flexure section 13 is placed with respect to the first support portion 111. In other words, the flexure section 13 is supported by the first support portion 111. The flexure section 13 supports the weight section 12 so that the weight section 12 is located on the inside of the frame section 11.
In detail, the weight section 12 has a length and a width. The length of the weight section 12 is formed along the longitudinal direction of the frame section 11. The width of the weight section 12 is formed along a direction intersecting with the longitudinal direction of the frame section 11. The weight section 12 has a first end 121 at one end in the longitudinal direction thereof, and has a second end 122 at the other end in the longitudinal direction thereof. The first end 121 of the weight section 12 is joined to the first support portion 111 through the flexure section 13. The support beam section 20 is configured to join between the frame section 11 and the second end 122 of the weight section 12.
The weight section 12 has a width directional first end 123 at one end in the width direction thereof, and has a width directional second end 124 at the other end in the width direction thereof. When viewed from the weight section 12, the width directional first end 123 of the weight section 12 is located at the same side with the width directional first end 113 of the frame section 11. When viewed from the weight section 12, the width directional second end 124 of the weight section 12 is located at the same side with the width directional second end 114 of the frame section 11. The width directional first end 123 of the weight section 12 is separated from the width directional first end 113 of the frame section 11 by a first clearance 101. The width directional second end 124 of the weight section 12 is separated from the width directional second end 114 of the frame section 11 by a second clearance 102.
The vibration power generation device includes the power generation section 18 on the abovementioned one surface of the flexure section 13. The lower electrode 15, the piezoelectric layer 16 and the upper electrode 17 are laminated in this order from the abovementioned one surface side of the flexure section 13, in the power generation section 18. Connecting wirings 31a, 31c, each composed of a metal wiring, are formed on the abovementioned one surface side of the flexure section 13. The connection wirings 31a, 31c are connected to the lower electrode 15 and the upper electrode 17, respectively. A lower electrode pad 32a and an upper electrode pad 32c electrically connected through the connection wirings 31a, 31c are formed on the abovementioned one surface side of the flexure section 13.
The power generation section 18 is designed so that the lower electrode 15 has the largest planar dimension, the piezoelectric layer 16 has a second largest planar dimension, and the upper electrode 17 has the smallest planar dimension. In the present embodiment, in a planar view, the piezoelectric layer 16 is located inside a peripheral line of the lower electrode 15, and the upper electrode 17 is located inside a peripheral line of the piezoelectric layer 16.
In the resonance frequency adjustment means of the present embodiment, the support beam section 20 includes symmetrically-located two support beam sections 20 at the abovementioned tip side of the weight section 12 in the initial shape. As shown in
As mentioned above, the support beam section 20 has the spring structure. In the following, the structure is explained from another view point. That is, the support beam section 20 has a band piece 21 and a joining piece 22. As shown in
In further detail, the band piece 21 has a first end 211 and a second end 212. The second end 212 of the band piece 21 is located at opposite side to the first end 211 of the band piece 21. The second end 212 of the band piece 21 is connected to the second end 122 of the weight section 12.
The joining piece 22 is formed so as to join between the connecting portion and the frame section 11. In detail, the joining piece 22 is formed so as to join between the connecting portion and the second support portion 112 of the frame section 11. In further detail, one end of the joining piece 22 is connected to the first end 211 of the band piece 21, and the other end of the joining piece 22 is connected to the second support portion 112 of the frame section 11.
The joining piece 22 and the band piece 21 are located in a clearance between the width directional first end 123 and the frame section 11. In detail, the joining piece 22 and the band piece 21 are arranged in the clearance 101 between the width directional first end 113 of the frame section 11 and the width directional first end 123, and the joining piece 22 and the band piece 21 are arranged in the clearance 102 between the width directional second end 114 of the frame section 11 and the width directional second end 124. As shown in
In this configuration, the insulation section 35 is formed of a silicon dioxide film, but is not limited to the silicon dioxide film. The insulation section 35 may be formed of a silicon nitride film. A seed layer of MgO layer (not shown in figure) is formed between the substrate 25 and the lower electrode 15. Silicon dioxide films 36, 37 are formed on the abovementioned one surface side and the abovementioned the other surface side of the silicon substrate 25, respectively.
When defining a substrate 25 side-surface of the first cover substrate 29 as a “one surface” of the first cover substrate 29, the first cover substrate 29 is formed at the abovementioned one surface side thereof with a first recess 38 as a displacement space for a moving portion which is composed of the weight section 12 and the flexure section 13.
The first cover substrate 29 is provided with output electrodes 40, 40 at a “the other surface” side of the first cover substrate 29. The output electrode 40 is adapted to supply an alternating-current voltage generated in the power generation section 18 toward outside. Connection electrodes 41, 41 are formed on the abovementioned one surface side of the first cover substrate 29. Through-hole wirings 42, 42 are penetratingly provided through the first cover substrate 29 along the thickness direction. The output electrodes 40, 40 are electrically connected to the connection electrodes 41, 41 through the through-hole wirings 42, 42, respectively. In the first cover substrate 29, the connection electrodes 41, 41 are bonded to be electrically connected to the lower electrode pad 32a and the upper electrode pad 32c of the substrate 25, respectively. In this configuration, each of the output electrodes 40, 40 and the connection electrodes 41, 41 is formed of a laminated film of a Ti film and an Au film. However, the materials and the layer structure are not particularly limited thereto. In this configuration, Cu is employed for the material of the through-hole wirings 42, 42, but it is not limited thereto. For example, Ni, Al or the like can be employed.
In case of employing a silicon-based substrate as the first cover substrate 29 in the present embodiment, the first cover substrate 29 is provided with an insulation film 43 of a silicon dioxide film in order to prevent short-circuit between the two output electrodes 40, 40. Herein, the insulation film 43 is formed across the abovementioned one surface side of the first cover substrate 29, the abovementioned the other surface side of the first cover substrate 29, and inner peripheral surfaces of through-holes 44, 44 inside which the through-hole wirings 42, 42 are formed. Note that, in case of employing an insulating substrate such as a glass-based substrate as the first cover substrate 29, such an insulating film 43 can be omitted.
When defining a substrate 25 side-surface of the second cover substrate 30 as a “one surface” of the second cover substrate 30, the second cover substrate 30 is formed at the abovementioned one surface side thereof with a second recess 39 as a displacement space for the moving portion composed of the weight section 12 and the flexure section 13. Note that, the second cover substrate 30 is preferably formed of an insulating substrate such as a glass substrate.
The substrate 25 is provided with a first connection metal layer 46 for bonded to the first cover substrate 29 at the abovementioned one surface side of the substrate 25. The first cover substrate 29 is provided with a second connection metal layer (not shown in figure) for bonded to the first connection metal layer 46. The first connection metal layer 46 is formed of the same material with the lower electrode pad 32a and the upper electrode pad 32c. The first connection metal layer 46 is formed on the abovementioned one surface of the substrate 25 so as to have the same thickness with the lower electrode pad 32a and the upper electrode pad 32c.
In this configuration, the substrate 25, the first cover substrate 29, and the second cover substrate 30 are bonded through a room-temperature bonding method, but the bonding method is not limited to the room-temperature bonding method. For example, they may be bonded through an anodic bonding method or a resin bonding method using an epoxy resin etc. Note that, the vibration power generation device of the present embodiment is produced using manufacturing technique of MEMS device and the like.
In the above described vibration power generation device of the present embodiment, the power generation section 18 is composed of the lower electrode 15, the piezoelectric layer 16, and the upper electrode 17. In this configuration, when the flexure section 13 vibrates, the piezoelectric layer 16 is subjected to a stress. Then, it generates a deviation in electric charge in the lower electrode 15 and the upper electrode 17. Thereby, an alternating-current voltage generates in the power generation section 18. At this time, the support beam section 20 restricts an excess vibration of the weight section 12.
In this instance, a power generation efficiency increases with an increase of a power generation index P which meets a relation of P∝e312/ε, where ε is a relative permittivity of a piezoelectric material used for the piezoelectric layer 16 of the vibration power generation device. In consideration of general values of a piezoelectric constant e31 and a relative permittivity c of each of PZT and AlN which are typical piezoelectric materials used for the vibration power generation device, the power generation index P can be more increased by employing PZT, because PZT has a larger piezoelectric constant e31 which contributes to the power generation index P at a square. In the vibration power generation device of the present embodiment, PZT which is a kind of lead-based piezoelectric material is used for the piezoelectric material of the piezoelectric layer 16. However, the lead-based piezoelectric material is not limited to PZT. For example, PZT-PMN(:Pb(Mn,Nb)O3) or PZT dope with other impurities may be employed. Note that, the piezoelectric material of the piezoelectric layer 16 is not limited to the lead-based piezoelectric material, and other piezoelectric material may be employed.
Hereinafter, a producing method of the vibration power generation device of the present embodiment is described with reference to
Firstly, an insulating film forming process is performed. In the insulating film forming process, silicon dioxide films 36, 37 are formed on one surface side and the other surface side of a silicon substrate 25 formed of silicon, respectively, through a thermal oxidation method or the like. Thereby, a structure shown in
Then, a metal layer forming process is performed. In the metal layer forming process, a metal layer 50 of a Pt layer is formed on the whole of the abovementioned one surface of the substrate 25 by a sputtering method, a CVD method or the like. Herein, the metal layer 50 becomes the basis of a lower electrode 15, a connection wiring 31a and a lower electrode pad 32a. Subsequently, a piezoelectric film forming process is performed. In the piezoelectric film forming process, a piezoelectric film 51 (such as a PZT film) of a piezoelectric material (such as PZT) is formed on the whole of the abovementioned one surface of the substrate 25 by a sputtering method, a CVD method, a sol-gel method or the like. Herein, the piezoelectric film 51 becomes the basis of a piezoelectric layer 16. Thereby, a structure shown in
After the piezoelectric film forming process, a piezoelectric film patterning process is performed. In the piezoelectric film patterning process, the piezoelectric film 51 is patterned through a photolithography technique and an etching technique to form the piezoelectric layer 16 formed of a part of the piezoelectric film 51. Thereby, a structure shown in
After then, a metal layer patterning process is performed. In the metal layer patterning process, the metal layer 50 is patterned through a photolithography technique and an etching technique to form the lower electrode 15, the connection wiring 31a and the lower electrode pad 32a each of which is formed of a part of the metal layer 50. Thereby, a structure shown in
After forming the lower electrode 15, the connection wiring 31a and the lower electrode pad 32a through the metal layer patterning process, an insulation section forming process is performed. In the insulation section forming process, an insulation section 35 is formed on the abovementioned one surface side of the substrate 25. Thereby, a structure shown in
After the insulation section forming process, an upper electrode forming process and a wiring forming process are simultaneously performed. In the upper electrode forming process, an upper electrode 17 is formed through a thin-film forming technique of an EB evaporation method, a sputtering method, a CVD method or the like, a photolithography technique and an etching technique. In the wiring forming process, a connection wiring 31c and an upper electrode pad 32c are formed through a thin-film forming technique of an EB evaporation method, a sputtering method, a CVD method or the like, a photolithography technique and an etching technique. Thereby, a structure shown in
After forming the upper electrode 17, the connection wiring 31c and the upper electrode pad 32c, a substrate treatment process is performed. In the substrate treatment process, a frame section 11, a weight section 12, a flexure section 13 and a support beam section 20 are formed through a photolithography technique, an etching technique and the like. Thereby, a structure shown in
In the front side groove forming process and the back side groove forming process in the substrate treatment process according to the present embodiment, the substrate 25 is etched through an inductively-coupled plasma (ICP) type etching equipment capable of vertical deep etching. Therefore, an angle between the back side of the flexure section 13 and an inner surface of the frame section 11 can be made about 90 degree. Note that, the front side groove forming process and the back side groove forming process in the substrate treatment process are not limited to dry etching through the ICP type dry-etching equipment. Another dry-etching equipment can be used, so long as it can perform a high anisotropic etching. In case that the abovementioned one surface of the substrate 25 is a (110) surface, wet etching (crystal anisotropic etching) using an alkaline solution such as a TMAH solution or a KOH solution may be used.
For obtaining the power generation device of the present embodiment, processes until finishing the substrate treatment process are performed in a wafer. After then, a dicing process is performed, thereby the units formed in the wafer is divided into an individual vibration power generation device.
Note that, the present embodiment includes a first cover substrate 29 and a second cover substrate 30. Therefore, after performing the abovementioned etching process in which the flexure section 13 is formed, a cover bonding process is performed. In the cover bonding process, the cover substrates 29, 30 are bonded. In this case, processes until finishing the cover bonding process are performed in the wafer, and a dicing process is further performed thereby the wafer is divided into an individual power generation device. Each of the cover substrates 29, 30 is preferably formed by arbitrarily employing a known process such as a photolithography process, an etching process, a thin-film forming process, a plating process and the like.
In the power generation section 18, the piezoelectric layer 16 is formed on the lower electrode 15. In this instance, the crystallinity of the piezoelectric layer 16 can be further improved by providing a buffer layer (not shown), which serves as a foundation when forming the piezoelectric layer 16, between the lower electrode 15 and the piezoelectric layer 16. A kind of conductive oxide material such as SrRuO3, (Pb,Ra)TiO3, PbTiO3 or the like may be employed as a material of the buffer layer.
As described above, the vibration power generation device of the present embodiment includes the resonance frequency adjustment means provided between the frame section 11 and the weight section 12. With this configuration, it is possible to form such a vibration power generation device in which the resonance frequency in the initial shape is adjusted at a predetermined value.
In the vibration power generation device of the present embodiment, the resonance frequency adjustment means is composed of the support beam section 20 which is joined between the frame section 11 and the weight section 12 and which is provided separately from the flexure section 13, and the resonance frequency is adjusted by changing the shape of the support beam section 20. With this configuration, it is possible to form such a vibration power generation device in which the resonance frequency in the initial shape is adjusted at a predetermined value. In addition, this configuration can suppress a possibility of damaging the vibration power generation device caused by a sudden increase of displacement of the weight section 12 due to an application of an excess acceleration to the vibration power generation device.
In the vibration power generation device of the present embodiment, in the resonance frequency adjustment means, the support beam section 20 is formed symmetrically in the plane which containing the aligned direction of the frame section 11, the flexure section 13 and the weight section 12, and the thickness direction of the flexure section and the weight section. That is, the support beam section 20 is formed in a symmetrical supporting condition in the initial shape. With this configuration, the vibration property of the vibration power generation device is hardly affected, thereby this configuration can improve the stability of vibration state.
In the vibration power generation device of the present embodiment, the support beam section 20 has the spring structure having a plurality of the folded portions located between the frame section 11 and the weight section 12. This configuration makes it possible to restrict the amplitude of the weight section 12, wherein the weight section 12 is vibrated due to an acceleration applied to the vibration power generation device, thereby can suppress a possibility of damaging the vibration power generation device. In addition, the vibration power generation device can be formed to have a predetermined adjusted value of the resonance frequency in the initial shape by adjusting the number of the folded portions.
In the vibration power generation device of the present embodiment, the folded portion in the spring structure is formed with a curvature (R). With this configuration, the support beam section 20 can alleviate the concentration of stress, and can improve the acceleration resistant property.
In the vibration power generation device of the present embodiment, in the resonance frequency adjustment means, the resonance frequency is adjusted at a predetermined value by the change of the length of a side of the support beam section 20. With this configuration, the vibration power generation device can easily change the resonance frequency only by changing the length in the initial shape of the support beam section 20.
In the vibration power generation device of the present embodiment, in the resonance frequency adjustment means, the resonance frequency is adjusted at a predetermined value by the change of the width of a side of the support beam section 20. With this configuration, the vibration power generation device can easily change the resonance frequency only by changing the width in the initial shape of the support beam section 20.
Because including the support beam section 20, the vibration power generation device can suppress a possibility of damaging the flexure section 13 due to applying an excess load to the weak flexure section 13 during such as a dip process in wet-etching or removal of resist. Thereby, the support beam section 20 can suppress a possibility of damaging the flexure section 13. In addition, it can prevent the thinly formed flexure section 13 from distorting due only to an influence of a residual stress in the piezoelectric layer 16 of the power generation section 18 or an influence of a gravity of the weight section 12.
Besides, the frame section 11 has the length. The frame section 11 has the first support portion 111 at one end in the longitudinal direction, and has the second support portion 112 at the other end in the longitudinal direction. The flexure section 13 is supported by the first support portion 111. The flexure section 13 supports the weight section 12 so that the weight section 12 is located on the inside of the frame section 11.
The weight section 12 has the length. The weight section 12 has the first end 121 at one end in the longitudinal direction thereof, and has the second end 122 at the other end in the longitudinal direction thereof The first end 121 of the weight section 12 is joined to the first support portion 111 through the flexure section 13. The support beam section 20 joins between the frame section 11 and the second end 122 of the weight section 12.
The support beam section 20 has the band piece 21 and the joining piece 22. The band piece 21 extends from the second end 122 of the weight section 12 toward the first support portion 111 of the frame section 11. The band piece 21 has the connecting portion. The connecting portion is located between the second end 122 of the weight section 12 and the first support portion 111 of the frame section 11. The joining piece 22 is formed so as to join between the connecting portion and the frame section 11. When acceleration is applied to the vibration power generation device, the weight section 12 is vibrated. With this configuration, the amplitude of vibration of the weight section 12 caused by the acceleration can be restricted. In detail, the vibration, along with the thickness direction of the frame 11, of the weight section 12 caused by an acceleration applied to the vibration power generation device can be restricted. That is, the amplitude of the weight section 12 along the thickness direction of the frame section 11 is restricted. As a result, this configuration can suppress a possibility of damaging the vibration power generation device.
Furthermore, the joining piece 22 is formed so as to join between the connecting portion and the second support portion 112 of the frame section 11. With this configuration, the amplitude of vibration of the weight section 12 caused by an acceleration applied to the vibration power generation device can be restricted. In detail, the vibration, along with the thickness direction of the frame 11, of the weight section 12 caused by an acceleration applied to the vibration power generation device can be restricted. That is, the amplitude of the weight section 12 along the thickness direction of the frame section 11 is restricted. As a result, this configuration can suppress a possibility of damaging the vibration power generation device.
The weight section 12 has the width. One end of the weight section 12 in the width direction is defined as the width directional first end 123. The width directional first end 123 is separated from the frame section 11 by the first clearance 101. The support beam section 20 is arranged in the first clearance 101. With this configuration, the support beam section 20 prevents the weight section 12 from vibrating in a direction along with the width direction of the weight section 12. As a result, this configuration can reduce such a force applied to the flexure section 13 along with the width direction of the weight section 12. Therefore, this configuration makes it possible to prevent the flexure section 13 from damaged.
The band piece 21 has the first end 211 and the second end 212. The second end 212 of the band piece 21 is located at opposite side to the first end 211 of the band piece 21. The second end 212 of the band piece 21 is connected to the second end 122 of the weight section 12. One end of the joining piece 22 is connected to the first end 211 of the band piece 21, and the other end of the joining piece 22 is connected to the second support portion 112 of the frame section 11. Therefore, the amplitude of the weight section 12 along the thickness direction of the frame section 11 is restricted. As a result, this configuration can suppress a possibility of damaging the vibration power generation device.
The support beam section 20 arranged in the first clearance 101 and the support beam section 20 arranged in the second clearance 102 are formed symmetrically with respect to the weight section 12. Therefore, the amplitude of the weight section 12 along the thickness direction of the frame section 11 is restricted. As a result, this configuration can suppress a possibility of damaging the vibration power generation device.
The frame section 11 has the width directional first end 113 at one end in the width direction, and has the width directional second end 114 at the other end in the width direction. The weight section 12 has the width directional first end 123 at one end in the width direction, and has the width directional second end 124 at the other end in the width direction. When viewed from the weight section 12, the width directional first end 113 of the frame section 11 is located at the same side with the width directional first end 123 of the weight section 12. When viewed from the weight section 12, the width directional second end 114 of the frame section 11 is located at the same side with the width directional second end 124 of the weight section 12. The width directional first end 123 of the weight section 12 is separated from the width directional first end 113 of the frame section 11 by the first clearance 101. The width directional second end 124 of the weight section 12 is separated from the width directional second end 114 of the frame section 11 by the second clearance 102. The support beam section 20 is composed of a plurality of support beam sections 20. One of the plurality of support beam sections 20 is arranged in the first clearance 101, and another one of the plurality of support beam sections 20 is arranged in the second clearance 102. Therefore, the amplitude of the weight section 12 along the thickness direction of the frame section 11 is restricted. As a result, this configuration can suppress a possibility of damaging the vibration power generation device.
In the present embodiment, the vibration power generation device has two of the support beam sections 20. However, the number of the support beam sections 20 is not limited thereto. For example, the number may be one or more than three. That is, the number of the support beam section 20 may be one or more.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2010-104227 | Apr 2010 | JP | national |
| Filing Document | Filing Date | Country | Kind | 371c Date |
|---|---|---|---|---|
| PCT/JP2011/060351 | 4/28/2011 | WO | 00 | 10/19/2012 |
