The present invention relates generally to circuits and methods for implementing VCO (voltage controlled oscillator) circuits for millimeter wave applications. More specifically, the invention relates to circuits and methods for constructing LC voltage controlled oscillators using variable capacitance degeneration to provide increased tuning ranges for millimeter wave applications.
In general, a VCO (voltage controlled oscillator) is an oscillator circuit that outputs an AC signal having a frequency that varies in response to an input control voltage. VCOs are fundamental components that are employed in a broad range of applications including radar and communications systems (e.g., wireline or wireless applications) for data transfer and recovery processes. By way of example, VCOs are utilized for PLL (phase Locked loop) circuits, DLL (delay locked loop) circuits, or injection locked oscillators. VCOs are further employed for applications such as frequency translation, data modulation, clock distribution and clock/data recovery.
As is known in the art, the first order oscillation frequency of the cross-coupled LC VCO circuit (10) may be determined as:
where the LC product is the resonant frequency of the VCO tank (12). The oscillator core (11) provides a “negative resistance” that is needed to compensate the losses of the tank circuit (12) in order to sustain oscillation. The tank circuit (12) includes a parallel parasitic resistance RP that represents the resistive losses of the tank inductor L and capacitor C (e.g., varactor losses). For oscillation to occur, the negative resistance (−1/gm) provided by the: cross-coupled transistors Q has to be larger (in absolute value) than the parallel parasitic resistance RP of the tank circuit (12):
R
P−(1/gm)≦0 (2).
In general, it is desirable to design VCOs having wide tuning ranges while minimizing phase noise. When designing a VCO, however, there is typically a tradeoff between tuning range and phase noise. For example, for the VCO circuit (10) of
Alternatively, the tuning range of a VCO having the conventional framework as depicted in
Other conventional LC VCO circuit topologies implement what is known as fixed capacitance emitter degeneration to provide increased oscillation frequency and tuning ranges. By way of example,
The oscillator core (21) comprises a pair of cross-coupled transistors Q (e.g., bipolar junction transistors), with emitter degeneration provided by fixed capacitors Ce and resistors Re connected to the emitters of the cross-coupled transistors Q. By using fixed capacitive degeneration, the oscillation frequency approaches:
The conventional VCO framework of
Furthermore, for the VCO (20) with fixed capacitance emitter degeneration, the following equations apply:
and where Cπ denotes the base-emitter capacitance, rb denotes the base resistance, and where gm denotes the conductance, such as described in the article by Zhan, et al., “Analysis of Emitter Degenerated LC Oscillators Using Bipolar Technologies”, Proceeding of IEEE International Symposium on Circuits and Systems, Bangkok, Thailand, May 25-28, 2003.
By employing fixed capacitive degeneration, the tuning range and oscillation frequency of an LC VCO can be increased, with less power required to sustain oscillation. Despite this advantage, however, the performance of a VCO with fixed capacitive degeneration can be degraded under different bias conditions due to changes (increase or decrease) in the parasitic resistance RP of the LC tank under such varying bias conditions. For instance, with the the conventional VCO framework of
In general, exemplary embodiments of the invention include voltage controlled oscillator circuits employing variable capacitance degeneration to provide increased tuning ranges and output amplitudes for VCOs for use in millimeter wave applications. Exemplary embodiments of the invention include methods for utilzing variable capacitance degeneration for tuning/controlling VCO gain and the parasitic behaviors of active devices of the oscillator core, to thereby provide increased tuning range and output power across the full bandwidth of the oscillator at mllimeter wave operating frequencies.
For example, in one exemplary embodiment, a voltage controlled oscillator circuit includes a resonant circuit and an oscillator core coupled to the resonant circuit The resonant circuit has a resonant frequency that is controlled by a first control voltage to set an oscillation frequency of the VCO. The oscillator core provides a negative impedance that compensates losses of the resonant circuit and sustains oscillation of the VCO, wherein the oscillator core implements variable capacitive degeneration to adjust an amount of negative impedance provided by the oscillator core based on a second control voltage.
These and other exemplary embodiments, features and advantages of the present invention will be described or become apparent from the following detailed description of exemplary embodiments, which is to be read in connection with the accompanying drawings.
The resonant circuit (32) may include parallel inductors L and variable capacitors C. The variable capacitors C are connected between the collector terminals of the transistors Q and commonly connected to a tuning voltage (Vtune1) input node N1. In one exemplary embodiment, the variable capacitors may be implemented using varactors (34) A varactor is a PN junction semiconductor, designed for microwave frequencies, in which the capacitance varies with the applied voltage.
Moreover, the oscillator core (31) comprises a degeneration network that includes a pair of variable capacitors Ce(var), which are connected between the emitter terminals of the transistors Q and commonly connected to a tuning voltage (Vtune2) input node N2. In one exemplary embodiment, the variable capacitors Ce(var) may be implemented using diode varactors (35). The degeneration network further comprises resistors Re connected to the emitters of the transistors Q. The resistors Re are connected in parallel with respective varactors (35), which serve to isolate the varactors (35).
In the exemplary embodiment of
In one exemplary embodiment of the invention, a common tuning voltage (e.g., Vtune1=Vtune2) can be commonly applied to both nodes N1 and N2. In another exemplary, embodiment, separate and distinct tuning control voltages (Vtune1, Vtune2) may be applied to respective tuning nodes N1 and N2, thereby allowing different variable tuning voltages to be applied to the resonant circuit (32) and the degeneration network in the oscillator core (31) for fine or coarse oscillation frequency tuning. For example, for reasonably sized varactors, the emitter varactors (35) will vary the oscillating frequency to a lesser extents than the collector varactors (34).
It is to be appreciated that the implementation of variable capacitive degeneration within the emitter degenerated oscillator core (31) provides for enhanced tuning ability and performance of the VCO (30) on various levels. For example, variable capacitor degeneration provides an additional mechanism for tuning the oscillation frequency of the VCO (30) by varying the parasitic capacitance seen by the negative resistance cell, i.e., oscillator core (31). In particular, the above Equation 3 can be modified by replacing the fixed degeneration capacitance Ce with a variable capacitance Ce(var) to yield:
Here, as compared to the tuning range of a VCO with fixed capacitor degeneration Ce (e.g.,
It is to be further appreciated that variable capacitance degeneration provides a mechanism for tuning the VCO gain. More specifically, variable capacitive degeneration enables the negative resistance of the cross-coupled pair (an effect of capacitive degeneration) to be adjusted for the purpose of tuning the oscillation amplitude of the VCO core (31) to account for variations in bias conditions of the collector-connected (tank) varactors (34) that cause increases or decreases in the parasitic resistance of the resonant circuit (32). The degree to which the parasitic resistance varies will depend on various factors such as the type of varactors (34)l that are employed, the polarity of the varactors (34), etc.
In accordance with exemplary embodiments of the invention, changes in bias conditions can be countered by varying the capacitive degeneration to increase/decrease the feedback gain of the cross-coupled pair and thereby appropriately adjust the negative resistance. For instance, when the parasitic resistance of the resonant circuit. (32) is increased, the feedback gain of the cross-coupled pair of transistors Q in the core (31) can be increased to maintain efficient VCO performance. Similarly, when the parasitic resistance of the resonant circuit decreases, the feedback gain can be appropriately decreased so as to maintain efficient VCO performance.
This can be illustrated by Equ. 7 above, where the fixed degeneration capacitor Ce can be replaced with the variable degeneration capacitance, Ce(var), such that XEE is variable with changes in the degeneration capacitance. In particular, an increase in the degeneration capacitance causes XEE to increase, which results in an increase in the feedback gain. On the other hand, a decrease in the degeneration capacitance causes XEE to decrease, which results in a decrease in the feedback gain.
In this regard, variable capacitive degeneration can be used to dynamically adjust the gain of the feedback circuit to minimize the amount of negative feedback needed under current operating conditions at a given time. Moreover, the ability to dynamically adjust the feedback gain via variable capacitive degeneration effectively enables control of the output power of the oscillator, e.g., increasing the gain of the feedback loop under high loss conditions. This is to be contrasted with conventional VCO designs with fixed capacitive degeneration (as in
It is to be further appreciated that variable capacitive degeneration provides a mechanism for reducing VCO phase noise and thus improving VCO performance. For example, as noted above, the degeneration varactors (35) can be tuned to increase the output amplitude of the VCO (30) under high loss bias conditions. According to Leeson's prediction, the phase noise in the 1/f2 region at an offset frequency Δw from an oscillation frequency wOSC is given by:
where k is Bolztmanns Constant, T is the absolute temperature, R is the VCO tank resistance (parasitic resistance Rp), Vo is the oscillation amplitude, F is the noise factor, and Q is the tank quality. According to Equ. 9, an increase in the parasitic resistance R can be offset by an increase in the oscillation amplitude Vo to thereby minimize the phase noise. Therefore, under high loss bias conditions, the degeneration varactors (35) can be tuned to increase the output amplitude of the VCO (30).
Moreover, with the exemplary VCO framework of
It is to be understood that
Although exemplary embodiments have been described herein with reference to the accompanying drawings, it is to be understood that the present invention is not limited to those exemplary embodiments, and that various other changes and modifications may be affected therein by one skilled in the art without departing from the scope or spirit of the invention. All such changes and modifications are intended to be included within the scope of the invention as defined by the appended claims.