This application is based upon and claims the benefit of priority from Japanese Patent Application No. 2018-011930, filed Jan. 26, 2018, the entire contents of which are incorporated herein by reference.
Embodiments described herein relate generally to a voltage-current conversion circuit.
In a voltage-current conversion circuit, a signal-to-noise ratio (SN ratio) is limited by a thermal noise current which is generated by a resistor performing a voltage-current conversion.
Therefore, there is a need of a circuit configuration which can improve the SN ratio in the voltage-current conversion circuit.
In general, according to one embodiment, a voltage-current conversion circuit includes: an amplifier including a first input which is one of a non-inverting input and an inverting input, and second and third inputs which are another one of the non-inverting input and the inverting input, wherein an input voltage is applied to the first input; a transistor including a first terminal, a second terminal, and a control terminal electrically connected to an output of the amplifier; and a serial connection comprising resistors connected in series between the first terminal of the transistor and an ac ground, wherein a predetermined connecting point, among a first connecting point between the first terminal of the transistor and the serial connection, a second connecting point between the ac ground and the serial connection, and one or more third connecting points between the resistors, is connected to the second input of the amplifier, and one of the connecting points other than the predetermined connecting point is connected to the third input of the amplifier.
Hereinafter, embodiments will be described with reference to the drawings.
The amplifier A1 includes a first input 1, a second input 2, and a third input 3. The first input 1 is a non-inverting input (+ input), and the second input 2 and the third input 3 are inverting inputs (− input). An input voltage signal is input to the first input 1 through the capacitor Cdc.
The transistor M1 is an N-type MOS transistor, and includes a gate terminal (control terminal), a source terminal (first terminal), and a drain terminal (second terminal). The gate terminal is connected to the output of the amplifier A1.
The resistors R1 and R2 are connected in series between the source terminal of the transistor and an ac ground AC-GND. A connecting point between the ac ground AC-GND and the resistor R2 is connected to the second input 2 of the amplifier A1. A connecting point between the source terminal of the transistor and the resistor R1 is connected to the third input 3 of the amplifier A1.
The current source Ib1 is used to supply a bias current to the transistor M1, and is connected between the source terminal of the transistor M1 and a power source Vss.
The capacitor Cdc is used to pass only the AC component of an input signal voltage Vin to supply the AC component to the first input 1 of the amplifier A1 so as to cut the DC component.
The resistor Rb is used to apply a bias voltage of the ac ground AC-GND to the first input 1 of the amplifier A1.
With the voltage-current conversion circuit illustrated in
Further, in the example illustrated in
Herein, Inoise1 represents a thermal noise current caused by the resistor R1+the resistor R2. gm represents the transconductance of the transistor M1. In other words, the following relation is established.
Inoise1={4 kTB/(2Ro)}1/2 (1)
Here, k is Boltzmann constant, T is an absolute temperature, and B is a frequency band width.
In
(Vin−Vout/2)Agm=Vout/(2Ro)+Inoise (2)
Iout=(Vin−Vout/2)Agm (3)
Since the gain A of the amplifier is large, the following relations are approximately obtained.
Vout=2Vin (4)
Iout=Vin/Ro+Inoise1=Vin/Ro+{4 kTB/(2Ro)}1/2 (5)
From the above Equation (4), Vout becomes two times Vin. At this time, Vout is applied to a resistor 2Ro, and the voltage-current conversion is performed. Therefore, a signal current becomes Vin/Ro by Equation (5), and the voltage-current conversion coefficient becomes 1/Ro. The noise current becomes {4 kTB/(2Ro)}1/2, and is reduced to (½)1/2 of the related art.
In this exemplary configuration, the second input 2 of the amplifier A1 is connected to a connecting point between the resistor R1 and the resistor R2. In this exemplary configuration, the voltage-current conversion coefficient is set to 1/Ro, R1=4Ro/3 and R2=2Ro/3 are satisfied, a gain from the first input 1 of the amplifier A1 to the output is set to +A, a gain from the second input 2 to the output is set to −3A/4, and a gain from the third input 3 to the output is set to −A/4.
Inoise1={4 kTB/(4Ro/3)}1/2 (6)
Inoise2={4 kTB/(2Ro/3)}1/2 (7)
In
[A{Vin−(3Vf+Vout)/4}−Vout]gm=Iout (8)
[A{Vin−(3Vf+Vout)/4}−Vout]gm=3(Vout−Vf)/(4Ro)+Inoise1 (9)
3(Vout−Vf)/(4Ro)+Inoise1=3Vf/(2Ro)+Inoise2 (10)
Since the gain A of the amplifier is large, and Inoise1 and Inoise2 are noises having no correlation, the following relations are approximately obtained.
Vout=2Vin (11)
Iout=Vin/Ro+{3 kTB/(Ro)}1/2 (12)
From the above Equation (11), Vout becomes two times Vin. At this time, since Vout is applied to the resistor 2Ro and a voltage-current conversion is performed, the signal current becomes Vin/Ro as Equation (12), and the voltage-current conversion coefficient becomes 1/Ro. The noise current becomes {3 kTB/(Ro)}1/2, and is reduced to (¾)1/2 of the related art.
As describe above, according to this embodiment, it is possible to reduce noises caused by the resistor for the voltage-current conversion in the voltage-current conversion circuit, so that an SN ratio can be improved.
The voltage-current conversion circuit illustrated in
The amplifier A1 includes a first input 1, a second input 2, and a third input 3. The first input is an inverting input (− input), and the second input 2 and the third input 3 are non-inverting inputs (+ input). An input voltage signal is input to the first input through the capacitor Cdc.
The transistor M1 is a P-type MOS transistor, and includes a gate terminal (control terminal), a drain terminal (first terminal), and a source terminal (second terminal). The gate terminal is connected to the output of the amplifier A1. The source terminal is connected to a power source Vdd.
The transistor M2 is a P-type MOS transistor, and includes a gate terminal, a drain terminal, and a source terminal. The gate terminal is connected to the output of the amplifier A1. The source terminal is connected to the power source Vdd. In addition, the size of the transistor M2 is the same as that of the transistor M1.
The resistors R1 and R2 are connected in series between the drain terminal of the transistor M1 and the ac ground AC-GND. A connecting point between the ac ground AC-GND and the resistor R2 is connected to the second input 2 of the amplifier A1. A connecting point between the drain terminal of the transistor M1 and the resistor R1 is connected to the third input 3 of the amplifier A1.
The current source Ib1 is used to supply a bias current to the transistor M1, and is connected between the drain terminal of the transistor M1 and the power source Vss.
The capacitor Cdc is used to pass only the AC component of an input signal voltage Vin to supply the AC component to the first input 1 of the amplifier A1 so as to cut the DC component.
The resistor Rb is used to apply a bias voltage of the ac ground AC-GND to the first input 1 of the amplifier A1.
With the voltage-current conversion circuit illustrated in
Since the size of the transistor M2 is the same as that of the transistor M1, the current flowing to the transistor M2 is equal to the current flowing to the transistor M1. In other words, the current flowing to the transistor M1 is output as the current flowing to the transistor M2.
Further, in the example illustrated in
Similarly to the first exemplary configuration of the first embodiment, if the thermal noise current caused by the resistor R1+the resistor R2 is set to Inoise, the following relation is established.
Inoise={4 kTB/(2Ro)}1/2 (13)
In addition, since the gain of the amplifier A1 is large, the following relations are approximately obtained.
Vout=2Vin (14)
Iout=Vin/Ro+Inoise=Vin/Ro+{4 kTB/(2Ro)}1/2 (15)
From the above Equation (14), Vout becomes two times Vin. At this time, Vout is applied to the resistor R1+the resistor R2 (resistance=2Ro), and the voltage-current conversion is performed. Therefore, as shown Equation (15), the signal current flowing in the transistor M2 becomes Vin/Ro, and the voltage-current conversion coefficient becomes 1/Ro. The noise current becomes {4 kTB/(2Ro)}1/2, and is reduced to (½)1/2 of the related art.
Further, in the first exemplary configuration of the first embodiment, the resistors R1 and R2 which convert the input signal voltage into a current are connected to the source terminal of the transistor. Therefore, an operating-point voltage of the drain terminal from which the signal current is taken out is necessarily set higher than the bias voltage by an overdrive voltage Vov_M1 such that the transistor M1 operates in a saturation region. With this regard, in this embodiment, the voltage of the drain terminal of the transistor M2 from which the signal current is taken out may be a voltage lower than a power source voltage Vdd by the overdrive voltage Vov_M2 such that the transistor M2 operates in the saturation region. Therefore, in this embodiment, it is possible to widen an operating voltage range more than the first embodiment.
As described above, according to this embodiment, it is possible to reduce noises caused by the resistor for the voltage-current conversion in the voltage-current conversion circuit, so that the SN ratio can be improved.
The voltage-current conversion circuit illustrated in
The first inputs 1 of the amplifiers A1 and A2 are non-inverting inputs (+ input), and the second inputs 2 and the third inputs 3 are inverting inputs (− input). An input signal voltage Vin-P is input to the first input 1 of the amplifier A1, and an input signal voltage Vin-M is input to the first input 1 of the amplifier A2.
The transistors M1 and M2 each are a P-type MOS transistor. The transistors M1 and M2 each include the gate terminal (control terminal), the source terminal (first terminal), and the drain terminal (second terminal). The gate terminal of the transistor M1 is connected to the output of the amplifier A1, and the gate terminal of the transistor M2 is connected to the output to the amplifier A2.
The resistors R1 and R2 are connected in series between the source terminal of the transistor M1 and the source terminal of the transistor M2. The connecting point between the resistor R1 and the resistor R2 is connected to the second input 2 of the amplifier A1 and the second input 2 of the amplifier A2. The connecting point between the source terminal of the transistor M1 and the resistor R1 is connected to the third input 3 of the amplifier A1, and the connecting point between the source terminal of the transistor M2 and the resistor R2 is connected to the third input 3 of the amplifier A2.
The current source Ib1 is used to supply a bias current to the transistor M1, and the current source Ib2 is used to supply a bias current to the transistor M2.
With the voltage-current conversion circuit illustrated in
Further, in the example illustrated in
Similarly to the first exemplary configuration of the first embodiment, if the thermal noise current caused by the resistor R1+the resistor R2 is set to Inoise, the following relation is established.
Inoise={4 kTB/(2Ro)}1/2 (16)
In addition, since the gains of the amplifiers A1 and A2 are large, the following relations are approximately obtained.
Vout-P=2Vin-P (17)
Vout-M=2Vin-M (18)
Vout-P−Vout-M=2(Vin-P−Vin-M) (19)
Iout-M=−(Vin-P−Vin-M)/Ro−Inoise=−Vin/Ro−{4kTR/(2Ro)}1/2 (20)
Iout-P=(Vin-P−Vin-M)/Ro+Inoise=Vin/Ro+{4 kTB/(2Ro)}1/2 (21)
From the above Equations (17) and (18), Vout-P and Vout-M become two times Vin-P and Vin-M respectively. At this time, (Vout-P)−(Vout-M) is applied to the resistor R1+the resistor R2 (resistance=2Ro) to perform the voltage-current conversion. Therefore, the signal current flowing in the transistor M1 as shown in Equation (20) becomes (−(Vin-P−Vin-M)/Ro), and the voltage-current conversion coefficient becomes 1/Ro. The noise current becomes−{4 kTB/(2Ro)}1/2, and is reduced to (½)1/2 of the related art. In addition, the signal current flowing in the transistor M2 as shown in Equation (21) becomes ((Vin-P−Vin-M)/Ro), and the voltage-current conversion coefficient becomes 1/Ro. The noise current becomes {4 kTB/(2Ro)}1/2, and is reduced to (½)1/2 of the related art.
In the first exemplary configuration described above, the input signal voltage has been described to be converted into a current by the resistors R1 and R2. However, in this exemplary configuration, the resistors R3 and R4 are connected instead of the current sources Ib1 and Ib2, and the input signal voltage is converted into a current by a resistor which is connected in parallel with the resistors R1+R2 and the resistors R3+R4. In this exemplary configuration, the resistance of the parallel connection of the resistors R1+R2 and the resistors R3+R4 is set to be 2Ro. Therefore, it is possible to reduce noises generated by the current sources Ib1 and Ib2 of the first exemplary configuration.
The voltage-current conversion circuit illustrated in
The first inputs of the amplifiers A1 and A2 each are a non-inverting input (+ input), and the second input 2 and the third input 3 each are an inverting input (− input). An input signal voltage Vin-P is input to the first input 1 of the amplifier A1, and an input signal voltage Vin-M is input to the first input 1 of the amplifier A2.
The transistors M1 and M2 each are a P-type MOS transistor. The transistors M1 and M2 each include the gate terminal (control terminal), the source terminal (first terminal), and the drain terminal (second terminal). The gate terminal of the transistor M1 is connected to the output of the amplifier A1, and the gate terminal of the transistor M2 is connected to the output of the amplifier A2.
The resistors R1 and R2 are connected in series between the source terminal of the transistor M1 and the source terminal of the transistor M2. The connecting point between the source terminal of the transistor M1 and the resistor R1 is connected to the third input 3 of the amplifier A1 and the second input 2 of the amplifier A2. The connecting point between the source terminal of the transistor M2 and the resistor R2 is connected to the third input 3 of the amplifier A2 and the second input 2 of the amplifier A1.
The current source Ib1 is used to supply a bias current to the transistor M1, and the current source Ib2 is used to supply a bias current to the transistor M2.
With the voltage-current conversion circuit illustrated in
Further, in the example illustrated in
Similarly to the first exemplary configuration of the first embodiment, if the thermal noise current caused by the resistor R1+the resistor R2 is set to Inoise, the following relation is established.
Inoise={4 kTB/(2Ro)}1/2 (22)
In addition, the gains of the amplifiers A1 and A2 are large, the following relations are approximately obtained.
Vout-P=2Vin-P (23)
Vout-M=2Vin-M (24)
Vout-P−Vout-M=2(Vin-P−Vin-M) (25)
Iout-M=−(Vin-P−Vin-M)/Ro−Inoise=−Vin/Ro−{4 kTB/(2Ro)}1/2 (26)
Iout-P=(Vin-P−Vin-M)/Ro+Inoise=Vin/Ro+{4 kTB/(2Ro)}1/2 (27)
From the above Equations (23) and (24), Vout-P and Vout-M become two times Vin-P and Vin-M respectively. At this time, (Vout-P)−(Vout-M) is applied to the resistor R1+the resistor R2 (resistance=2Ro) to perform the voltage-current conversion. Therefore, the signal current flowing in the transistor M1 as shown in Equation (26) becomes (−(Vin-P−Vin-M)/Ro), and the voltage-current conversion coefficient becomes 1/Ro. The noise current becomes−{4 kTB/(2Ro)}1/2, and is reduced to (½)1/2 of the related art. In addition, the signal current flowing in the transistor M2 as shown in Equation (27) becomes ((Vin-P−Vin-M)/Ro), and the voltage-current conversion coefficient becomes 1/Ro. The noise current becomes {4 kTB/(2Ro)}1/2, and is reduced to (½)1/2 of the related art.
As described above, according to this embodiment, it is possible to reduce noises caused by the resistor for the voltage-current conversion in the voltage-current conversion circuit, so that the SN ratio can be improved.
The voltage-current conversion circuit illustrated in
The first inputs 1 of the amplifiers A1 and A2 each are an inverting input (− input), and the second input 2 and the third input 3 each are a non-inverting input (+ input). An input signal voltage Vin-P is input to the first input 1 of the amplifier A1, and an input signal voltage Vin-M is input to the first input 1 of the amplifier A2.
The transistors M1, M2, M3, and M4 each are an N-type MOS transistor. The transistors M1, M2, M3, and M4 each include the gate terminal (control terminal), the drain terminal (first terminal), and the source terminal (second terminal). The gate terminals of the transistors M1 and M3 each are connected to the output of the amplifier A1, and the gate terminals of the transistors M2 and M4 each are connected to the output of the amplifier A2.
The resistors R1 and R2 are connected in series between the drain terminal of the transistor M1 and the drain terminal of the transistor M2. The connecting point between the resistor R1 and the resistor R2 is connected to the second input 2 of the amplifier A1 and the second input 2 of the amplifier A2. The connecting point between the drain terminal of the transistor M1 and the resistor R1 is connected to the third input 3 of the amplifier A1, and the connecting point between the drain terminal of the transistor M2 and the resistor R2 is connected to the third input 3 of the amplifier A2.
The resistor R3 is connected between the source terminal of the transistor M1 and the power source Vss, the resistor R4 is connected between the source terminal of the transistor M2 and the power source Vss, the resistor R5 is connected between the source terminal of the transistor M3 and the power source Vss, and the resistor R6 is connected between the source terminal of the transistor M4 and the power source Vss.
The current source Ib1 is used to supply a bias current to the transistor M1, and the current source Ib2 is used to supply a bias current to the transistor M2.
With the voltage-current conversion circuit illustrated in
Further, for the sake of simplicity in the description, the transistors M1, M2, M3, and M4 are equal in size, and the resistors R3, R4, R5, and R6 have the same resistance. With such a configuration, the currents flowing to the transistors M3 and M4 are equal to those flowing to the transistors M1 and M2 respectively. In other words, the current flowing to the transistor M1 is output as a drain current of the transistor M3, and the current flowing to the transistor M2 is output as a drain current of the transistor M4. Further, in the example illustrated in
Similarly to the first exemplary configuration of the first embodiment, if the thermal noise current caused by the resistor R1+the resistor R2 is set to Inoise, the following relation is established.
Inoise={4 kTB/(2Ro)}1/2 (28)
In addition, since the gains of the amplifiers A1 and A2 are large, the following relations are approximately obtained.
Vout-P=2Vin-P (29)
Vout-M=2Vin-M (30)
Vout-P−Vout-M=2(Vin-P−Vin-M) (31)
Iout-M=−(Vin-P−Vin-M)/Ro−Inoise=−Vin/Ro−{4 kTB/(2Ro)}1/2 (32)
Iout-P=(Vin-P−Vin-M)/Ro+Inoise=Vin/Ro+{4 kTB/(2Ro)}1/2 (33)
From the above Equations (29) and (30), Vout-P and Vout-M become two times Vin-P and Vin-M respectively. At this time, (Vout-P)−(Vout-M) is applied to the resistor R1+the resistor R2 (resistance=2Ro) to perform the voltage-current conversion. Therefore, the signal current flowing in the transistors M1 and M3 as shown in Equation (32) becomes (−(Vin-P−Vin-M)/Ro), and the voltage-current conversion coefficient becomes 1/Ro. The noise current becomes −{4 kTB/(2Ro)}1/2, and is reduced to (½)1/2 of the related art. In addition, the signal current flowing in the transistors M2 and M4 as shown in Equation (33) becomes (Vin-P−Vin-M)/Ro), and the voltage-current conversion coefficient becomes 1/Ro. The noise current becomes {4 kTB/(2Ro)}1/2, and is reduced to (½)1/2 of the related art.
As described above, according to this embodiment, it is possible to reduce noises caused by the resistor for the voltage-current conversion in the voltage-current conversion circuit, so that an SN ratio can be improved.
This embodiment will describe a specific example of the amplifier which is used in
The amplifier illustrated in
The transistor Ms1 and the transistor Ms3 are set to have the same size, and the transistor Ms2 and the transistor Ms4 are set to have the same size.
The current supplied from the current source Ib10 flows to the transistors Ms1 to Ms4 in proportion to the size of the transistor. gm_s1 to gm_s4 each are the transconductance of the transistors Ms1 to Ms4. gm_s1=gm_s3 and gm_s2=gm_s4 are satisfied.
For example, in the case of the amplifier of
In addition, in the case of the amplifier of
In this embodiment, the matters described in the first to fifth embodiments will be generalized. In other words, the above embodiments have been described about an example in which the signal voltage (two times the input signal voltage) is applied to the resistor for the current conversion. However, the signal voltage (G times the input signal voltage) may be generalized to be applied to the resistor for the current conversion.
For example, in the first embodiment, any two connecting points in the resistors R1 to RN connected in series may be fed back to the second input 2 and the third input 3 of the amplifier A1 as illustrated in
(1−α)b+αa=1/G (34)
In the case of
Further, if Equation (34) is almost satisfied, the effect of noise reduction is not changed. For example, even in a case where a=1, b=0.1, α=½ are set in
Hitherto, the description has been described about the first to sixth embodiments. However, the matters described in the above embodiments may be variously changed and applied.
For example, in the configuration of
In addition, for example, in the configuration of
In addition, the above description has been made using a field effect transistor (FET) as the transistor. However, the gate terminal is replaced to a base terminal, the source terminal to an emitter terminal, and the drain terminal to a collector terminal, so that the similar configuration may be realized even using a bipolar transistor.
In addition, the above-described voltage-current conversion circuit may be applied particularly to a sensor (an angular velocity sensor, an accelerator sensor, etc.) which handles a minute signal, so that a vhigh-accuracy sensor can be obtained.
While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the inventions. Indeed, the novel embodiments described herein may be embodied in a variety of other forms; furthermore, various omissions, substitutions and changes in the form of the embodiments described herein may be made without departing from the spirit of the inventions. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the inventions.
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