Norman G. Einspruch et al., "VLSI Electronics Microstructure Science," vol. 15, VLSI Metallization, Academic Press, Inc. 1987, pp. 274-305. |
Simon S. Cohen et al., "VLSI Electronics Microstructure Science," vol. 13, Metal-Semiconductor Contacts and Devices, Academic Press, Inc., 1986, pp. 254-261. |
Y. Pauleau, "Interconnect Materials for VLSI Circuits," Solid State Technology, vol. 30, No. 4, Apr. 1987, pp. 155-162. |
Mansfeld et al., Development of "Stainless Aluminum", Electrochem. Soc. vol. 138, No. 12 (Dec. 1981). |
Chiang et al., Oxide-Nitride-Oxide Antifuse Reliability, (1990) IEEE, I.R.P. Symp. 186. |
Herndon et al., Multilevel Interconnect Planarization by Voltage and Laser Programmable Links Using Ion Implantation, (1989), IEEE VLSI Conf. |
Kikkawa et al., Comparison of Refractory Metal and Silicide Capping Effects on Aluminum Metallizations, VMIC Conf. 463 (1989). |
Hamdy et al., Dielectric Based Antifuse For Logic and Memory ICs, 88 IEEE Int'l. Electronic Device Meeting 786 (1988). |
Brown et al., Reduction of Hillock Growth on Aluminum Alloys, Proc. Fourth Int'l. IEEE VLSI Conf. 426 (1987). |
El-Ayat et al., A CMOS Electrically Configurable Gate Array, vol. 24, No. 3, Solid-State Circuites, pp. 752-762 (1989). |
Brian Cook et al., "Amorphous Silicon Antifuse Technology for Bipolar PROMS," Bipolar Circuits and Technology Meeting, IEEE, pp. 99-100 (1986). |
Shen et al., A Highly Reliable Aluminum Metallization For Micron and Submicron VLSI Applications, (Jun. 9-10, 1986) V-MIC Conf. 191. |
Gardner et al., Layered and Homooeneous Films of Aluminum and Aluminum/Silicon with Titanium Zirconium, and Tungsten for Multilevel Intercon. |
Stopper et al., Session XVIII: Modeling and Technology, 1985, IEEE Int'l Solid-State Circuits Conf. 268. |