This invention relates to low drop-out (LDO) DC voltage regulators.
A low drop-out DC voltage regulator is a regulator circuit that provides a controlled and stable DC voltage relative to a reference voltage. The operation of the circuit is based on feeding back an amplified error signal which is used to control output current flow of a pass device, such as a power field-effect transistor (‘FET’) driving a load. The drop-out voltage is the difference between the supply voltage and the output voltage below which regulation is lost. The minimum voltage drop required across the LDO regulator to maintain regulation is just the voltage across the pass device.
The low drop-out nature of the regulator makes it appropriate (over other types of regulators such as DC-DC converters and switching regulators) for use in many applications such as automotive, portable, and industrial applications. In the automotive industry, the low drop-out voltage is necessary for example during cold-crank conditions where an automobile's battery voltage can be below 6V. LDO voltage regulators are also widely used in mobile products with battery power supplies (such as cellular phones, personal digital assistants, cameras and laptop computers), where the LDO voltage regulator typically needs to regulate under low supply voltage conditions.
The main components of a simple LDO DC linear voltage regulator are a power amplifier such as an FET forming the pass device and a differential amplifier (error amplifier). One input of the differential amplifier monitors a percentage of the output, as determined for example by the ratio of a resistive voltage divider across the output. The second input to the differential amplifier is from a stable voltage reference (such as a bandgap reference voltage source). If the output voltage rises too high relative to the reference voltage, the drive to the power FET changes so as to maintain a constant output voltage. These elements constitute a DC regulation loop which provides voltage regulation.
In a typical LDO voltage regulator, the first stage (the error amplifier) presents a high impedance node. This high impedance node creates a frequency pole. The power amplifier, the output (including the load) and the first stage pole would give instability, which is avoided by using the output pole as the dominant pole to get stability. Generally this type of driver is still unstable when the load capacitance is 0. Accordingly, the output capacitance has to be specified, as does a minimum and maximum Equivalent Series Resistance (‘ESR’). As the load is part of the regulation loop, it is still possible for instability to be caused by such indeterminate factors as parasitic capacitance.
U.S. Pat. No. 6,373,233 describes a LDO voltage regulator including a capacitor connected in a compensation circuit element between control and output terminals of an output transistor. The voltage characteristics of the capacitor must be compatible with the usage specification and for a high voltage application, such as a 40 volt maximum output voltage, for example, the capacitor cannot be integrated in the manufacturing process of the voltage regulator using some metal-oxide-Silicon manufacturing techniques.
Transient load regulation is another important parameter of a LDO voltage regulator but U.S. Pat. No. 6,373,233 gives no information on how adequate performance in this respect could be achieved.
The present invention provides a low drop-out DC voltage regulator as described in the accompanying claims.
It will be understood that the use in the intermediate buffer stage of device T5 alone produces the plot shown in full and chain-dotted lines in
where gm7 is the transconductance of the pass device T7 itself, rDS7 is the output resistance presented by the pass device T7 with the voltage divider R1-R2 and (rDS7//RL) is the resistance presented by the parallel combination of the resistances rDS7 and RL.
The frequency of the pole of the output stage is given by:
and also varies as a function of output current since:
It follows that an increase in the load current results in the pole frequencies of the output and buffer stages increasing faster with output current than the gain diminishes, resulting in more gain at higher frequencies before reaching the cut-off frequency of the regulator.
The output pass device T7 is a PMOS FET, which allows a regulated low drop-out voltage to be obtained between supply and output voltages, but since the output is made with the drain of the PMOS device T7, the output is high impedance and the load and hence the load capacitor are part of the loop. Since the load capacitance CL appears in the main loop of the regulator, a strict specification is imposed on its value and on its ESR, which may still require the use of a large external bypass external capacitor in addition in order to ensure the stability of the loop.
The low drop-out DC voltage regulator 300 is powered by a voltage vsupply from a power supply (not shown) such as a battery, and which comprises a differential amplifier module 302, an intermediate buffer stage 304, and an output FET pass device 306. The differential amplifier module 302 receives a reference voltage vref at an input terminal 308 from a source (not shown) such as a bandgap circuit on one input and a feedback voltage on another input equal to the output voltage vO appearing at an output terminal 310. The load, shown as comprising a resistive component RL and a capacitive component CO, is connected between the output terminal 310 and ground. The differential amplifier module 302 and the intermediate buffer stage 304 form a feedback loop for providing to the output FET pass device 306 a control signal tending to correct error in the output voltage. A frequency and phase compensation module 312 between the differential amplifier input stage 302 and the intermediate buffer stage 304 provides gain and phase compensation as a function of frequency.
In more detail, the differential amplifier input stage 302 comprises pnp transistors 320 and 322 connected with common bases. The transistor 322 is arranged to have a current-carrying capacity substantially greater than the transistor 320. In this example, it is ten times greater than the transistor 320 but in other embodiments of the invention the current-carrying capacity of the transistor 322 is between five and fifteen times the current-carrying capacity of the transistor 320. The emitter of the transistor 320 is connected to receive the reference voltage vref from the input terminal 308 and its collector is connected to its base and through a current source 324 to ground. The emitter of the transistor 322 is connected to receive the feedback voltage vO from the output terminal 310 and its collector is connected through a current source 326 to ground and to a node 328 in the buffer stage 304.
The output pass device 306 is a p-type power FET, which has its source connected to receive the voltage vsupply from the power supply and its drain connected to the output terminal 310. The only significant capacitive element CM presented by the regulator 300 at the output terminal 310 is constituted by the intrinsic gate-drain capacitance CGD of the FET 306 itself. No external capacitance is utilised and would be unnecessary for the stable functioning of the regulator.
The buffer stage 312 comprises an n-type FET 340, whose source is connected to the node 328, whose gate is connected to the reference terminal 308 and whose drain is connected to the gate of the output pass FET 306. Pole tracking is provided by a p-type FET 342, whose source is connected to receive the voltage Vsupply from the power supply through a resistor RG, whose drain is connected to the drain of the FET 340 and whose gate is connected to the gate of the output pass FET 306 and to the drain of the FET 340.
The frequency and phase compensation module 312 comprises a p-type FET 344 whose source is connected to the node 328, whose drain is connected to ground and whose gate is connected through a capacitor Clf to the node 328 and through a resistor Rlf to a node 346. The node 346 is connected to the collector of a pnp transistor 348, whose emitter is connected to the output terminal 310 and which has its base connected in common with the transistors 318 and 320. The node 346 is also connected through a current source 350 to ground and to the drain and gate of a p-type FET 352, whose source is connected to the output terminal 310.
In operation, ignoring initially the effect of the frequency and phase compensation module 312, the transistor 320 establishes across the current source 324 a voltage equal to reference voltage vref diminished by a small voltage drop between the emitter and collector of the transistor 320 and applies the same voltage to the base of the transistor 322. The transistor 322 establishes across the current source 326 an error voltage vi proportional to output voltage vO diminished by a voltage drop between the emitter and collector of the transistor 322 and applies the same voltage to the node 328, the voltage drop across the emitter and collector path of the transistor 322 being a function of the difference between the output voltage vO and the voltage at the collector of the transistor 320. Normally, the output voltage vO applied to the emitter of the transistor 322 (and the emitter of the transistor 348 when the frequency and phase compensation module 312 is added) will be slightly less than the reference voltage vref and the gate-source voltage applied to the FET 340 by the terminal 308 and the node 328 will cause the FETs 340 and 342 of the buffer stage to conduct a current im1 that is a function of the difference between the output voltage vO and the reference voltage vref and of the resistor RG, with a transconductance of the buffer stage of gm1. The corresponding voltage applied to the gate of the pass FET 306 is a control signal tending to cause the FET 306 to correct error in the output voltage vO with a transconductance of gm2.
The differential module 302 (with the transistor 348), and hence the output 310 present low impedances to the feedback current ifb, whose values in this embodiment of the invention are of the order of 260 ohms for a bias current of 100 μA, for example, and the low impedance of this emitter-follower stage is in parallel with the drain of the FET 306. The differential module 302 presents the widest bandwidth of the modules of the regulator and the differential module 302 presents a frequency pole that is higher than the cut-off frequency of the regulator because the frequency pole of the differential module 302 is inversely proportional only to the parasitic capacitance at this stage. In a specific implementation of the regulator of
where vi is the voltage at the node 328. This gain is higher the lower the resistance rL and the capacitance CM presented to the output terminal 310 by the regulator. In this embodiment of the invention, the capacitance CM is reduced to the intrinsic gate-drain capacitance CGD of the FET 306 itself.
The DC gain is vO/vi=gm1RGgm2(RL//rL) and the difference between the DC gains at high load impedance and at low (25 ohm) load impedance is only 15 dB in the implementation example referred to above.
which is 20 MHz in this implementation.
An effect of the addition of the frequency and phase compensation module 312 is illustrated by comparison with
Analysis shows that the LDO regulator 300 is stable whatever the values of the load resistance and capacitance, as measured by the phase margin, that is to say the margin from a phase shift in the regulator loop of 180° at which the feedback would be positive instead of negative and oscillation would occur. When the load capacitance CO is large, for example 100 μF, the dominant pole is given by CO and the phase margin for the implementation referred to above is 85°, so that the regulator is stable.
As shown in
Analysis shows that, for the implementation referred to above, the worst case occurs for a value of the load capacitance CO of 100 nF, which is shown in
Analysis also shows that, in the absence of the capacitor Clf of the intermediate module, the regulator would be unstable, with a negative phase margin for load capacitances of the order of 1 μF to 10 μF.
For both configurations 300 and 800, at time 0 shown at point 504 where the load is open-circuit, the load current iO is 0 mAs and the offset between the output voltage vO and the reference voltage vref is zero. The feedback current ifb from the node 310 to the modules 302 and 312 is 100 μAs and flows through the transistor 322 and the current source 326 to ground.
When the load assumes its finite value, the load current iO rises to its maximum value, in this example 200 mAs, and the offset between the output voltage vO and the reference voltage vref rises to 60 mV, as shown at point 906 in
In the case of the configuration 300 of
Filing Document | Filing Date | Country | Kind | 371c Date |
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PCT/IB2008/051769 | 2/4/2008 | WO | 00 | 7/20/2010 |
Publishing Document | Publishing Date | Country | Kind |
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WO2009/098545 | 8/13/2009 | WO | A |
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20100295524 A1 | Nov 2010 | US |