Claims
- 1. In a process for reducing the water content of an HCl gas stream, the improvement comprising reducing the water content to less than 1 ppm by contacting the gas stream with a chloride of silicon or a chloride of a metal having a valence of at least four that is immobilized on a solid support.
- 2. The process of claim 1 wherein the chloride of silicon is SiCl.sub.4 and the support is alumina.
Parent Case Info
This application is a continuation of application Ser. No. 07/008,683 filed Jan. 29, 1987, now abandoned. Ser. No. 07/008,683 is a continuation-in-part of Ser. No. 06/841,440 filed Mar. 19, 1986, now abandoned.
US Referenced Citations (6)
Foreign Referenced Citations (2)
| Number |
Date |
Country |
| 0150736 |
Sep 1981 |
DDX |
| 0783221 |
Nov 1980 |
SUX |
Non-Patent Literature Citations (3)
| Entry |
| "Reactions of Titanium Tetrachloride with Silica Gel Surfaces", Ellestad et al., Journal of Molecular Catalysis, 33, (1985), pp. 275-287. |
| Ghandhi, VLSI Fabrication Principles, John Wiley & Sons, 1983, pp. 248-249, 251-257. |
| Gas Purification, 3rd Ed., Kohl & Riesenfeld, Gulf Publishing Co., 1979, p. 580. |
Continuations (1)
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Number |
Date |
Country |
| Parent |
8683 |
Jan 1987 |
|
Continuation in Parts (1)
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Number |
Date |
Country |
| Parent |
841440 |
Mar 1986 |
|