Claims
- 1. A method of manufacturing an optical waveguide comprising the steps of:(a) shaping a substrate consisting essentially of organic material only; applying at least one intermediate layer by a first vacuum coating process onto the substrate; and (c) applying a waveguide layer by means of a second vacuum coating process onto the intermediate layer; (d) said at least one intermediate layer being applied so that only a negligible part of light energy reaches an interface surface between said intermediate layer and said substrate.
- 2. The method of claim 1, said first and second vacuum coating processes being same processes.
- 3. The method of claim 1, wherein said second process is one of a plasma-enhanced CVD process, a CVD process, a reactive PVD process.
- 4. The method of claim 1, wherein said second process is one of reactive vapor deposition, reactive sputtering and ion plating.
- 5. The method of claim 1, wherein said first process is one of a plasma-enhanced CVD process, a CVD process, a reactive PVD process, plasma polymerization.
- 6. The method of claim 1, wherein said first process is one of reactive vapor deposition, reactive sputtering and ion plating.
- 7. The method of claim 1, wherein the shaping operation comprises embossing, deepdrawing or injection molding of the substrate.
- 8. The method of claim 1, wherein said substrate is of a polymer material.
- 9. The method of claim 1, wherein said substrate material is a polycarbonate.
- 10. The method of claim 1, wherein said shaping is performed one of before and of after performing said step of applying said at least one intermediate layer.
- 11. The process of claim 1, wherein said step of applying said at least one intermediate layer comprises applying at least one intermediate layer of an is organic material.
- 12. The method of claim 11, wherein said inorganic material comprises at least one of SiO2 and Si3N4.
- 13. The method of claim 1, wherein the step of applying said at least one intermediate layer and the step of applying said waveguide layer are performed at the maximum substrate temperature of 100° C.
- 14. The method of claim 13, wherein said temperature is 60° C. maximum.
- 15. The method of claim 1, wherein said waveguide layer bears directly onto the intermediate layer, the index of refraction of the material of said intermediate layer being smaller than the index of refraction of the material of said waveguide layer.
- 16. The method of claim 1, wherein an intermediate layer, which bears against said waveguide layer and is located between said waveguide layer and said substrate has a substantially lower level of propagation attenuation than said substrate.
- 17. The method of claim 1, wherein material of said waveguide layer is selected from one of the groups (a) or (b) consisting essentially of:(a) TiO2, TaO5, ZrO2, Al2O3, SiO2—TiO2, HfO2, Y2O3, Nb2O5, silicon nitride, oxynitride SiOxNy, HfOxNy, AlOxNy, TiOxNy, TaOxNy and MgF2, CaF2, (b) silicone, SiOx, Ge, GaAs, GaAlAs.
- 18. The method of claim 17, wherein the material of group (a) is selected as waveguide layer material for guiding light with a wavelength of between 400 nm and 1000 nm.
- 19. The method of claim 17, wherein the material of said waveguide layer is selected from group (b) for guiding light with a wavelength larger than 1000 nm.
- 20. The method of claim 1, wherein said at least one intermediate layer is applied containing at least one of SiO2 and of a mixture of SiO2 and TiO2 and of Si3N4.
- 21. The method of claim 1, wherein said at least one intermediate layer is of one of SiO2 and of Si3N4.
- 22. The method of claim 1, wherein said at least one intermediate layer is applied with a thickness of at least 5 nm.
- 23. The method of claim 1, wherein said at least one intermediate layer is applied with a thickness of at least 10 nm.
- 24. The method of claim 1, wherein at least one of applying said at least one intermediate and of applying said waveguide layer is performed by sputtering with a DC plasma discharge supplied by a DC generator, thereby comprising the step of cyclically separating said generator from the plasma discharge and simultaneously short-circuiting said plasma discharge.
- 25. The method of claim 1, wherein said at least one intermediate layer is deposited with a predetermined course of index of refraction along the thickness of said layer.
- 26. The method of claim 25, wherein the course of, index of fraction across said at least one intermediate layer starts at a position adjacent said subs rate with a value corresponding to the value of the refractive index of said substrate.
- 27. The method of claim 1, further comprising the step of simulating an intermediate substrate of glass between said substrate of organic material and said waveguide layer by applying said at least one intermediate layer.
- 28. The method of claim 1, including reducing propagation loss in said optical waveguide by a factor of at least 3 by means of applying said at least one intermediate layer compared with a propagation loss of the optical waveguide without said intermediate layer.
- 29. The method of claim 1, wherein at least one of said first and second processes comprises magnetron sputtering.
Priority Claims (1)
Number |
Date |
Country |
Kind |
2255/93 |
Jul 1993 |
CH |
|
CROSS-REFERENCE TO RELATED APPLICATIONS
This is a division of application Ser. No. 08/751,369, filed Nov. 19, 1996, now U.S. Pat. No. 6,610,222 which is a continuation of Ser. No. 08/278,271 filed Jul. 21, 1994, now abandoned which claimed priority on Swiss application 02 255/93-5, filed Jul. 26, 1993, which priority claim is repeated here.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
4749245 |
Kawatsuki et al. |
Jun 1988 |
A |
5170461 |
Yoon et al. |
Dec 1992 |
A |
Continuations (1)
|
Number |
Date |
Country |
Parent |
08/278271 |
Jul 1994 |
US |
Child |
08/751369 |
|
US |