The present invention contains subject matter related to Japanese Patent Application JP 2006-172822 filed in the Japanese Patent Office on Jun. 22, 2006, the entire contents of which being incorporated herein by reference.
1. Field of the Invention
The present invention relates to a wavelength conversion device including a fundamental wave light source and an external resonator, and a wavelength conversion method.
2. Description of the Related Art
A wavelength conversion device including a fundamental wave light source and an external resonator having a nonlinear optical crystal is generally used as a laser light source that oscillates light of a short wavelength laser such as an ultraviolet laser.
Impedance matching is performed as a main method to determine a reflectance (transmittance) of the input coupling element 121 of the related art. In this method, an internal loss of the external resonator is first figured out, and a loss of the input coupling element is determined in order to match with the obtained internal loss. In this case, wavelength conversion efficiency is maximized by selecting a reflectance of the input coupling element so that impedance is matched with the internal loss.
By contrast, U.S. Pat. No. 5,027,361 discloses a method of determining a reflectance of an input coupling element by not only performing impedance matching but also taking a nonlinear loss into consideration.
When using light having a relatively short wavelength obtained by the aforementioned wavelength conversion device, an intensity noise of a laser may have to be reduced. When laser scanning is performed to obtain an image, for example, an intensity noise of a laser causes deterioration in image quality. For example, when laser light in an ultraviolet region is used for an apparatus of inspecting a defect on a wafer, inspection accuracy is affected if an intensity noise is generated merely in a short time. In such a wafer inspection apparatus, a wafer is scanned with laser light at a speed of about 100 km/h or more to detect a defect on the wafer based on a reflected light intensity. At this point, an irradiation time per spot is about 0.3 μs. Accordingly, when an output is decreased in a fraction of a second due to an intensity noise, reflected light may be dark at a width of 0.3 μs and a black spot is formed in the scanned place. Properties of the inspection apparatus may be significantly impaired due to a black spot regarded as a defect.
According to an embodiment of the present invention, reducing a noise of wavelength converted light may be achieved.
According to an embodiment of the present invention, there is provided a wavelength conversion device including at least a fundamental wave light source and an external resonator. In the wavelength conversion device, a reflectance Rin of an input coupling element that inputs light from the fundamental wave light source to the external resonator is selected as represented by the equations 1 and 2, when a frequency jitter of the fundamental wave light source is Δfjitter, a resonator length of the external resonator is Lcav, a frequency line width of the external resonator is Δνcav, a total internal loss of the external resonator is δ, and a speed of light is c.
According to another embodiment of the present invention, there is provided a wavelength conversion method including the step of inputting light emitted from a fundamental wave light source to an external resonator to perform wavelength conversion. In the wavelength conversion method, a reflectance Rin of an input coupling element that inputs light from the fundamental wave light source to the external resonator is selected as represented by the equations 1 and 2, when a frequency jitter of the fundamental wave light source is Δfjitter, a resonator length of the external resonator is Lcav, a frequency line width of the external resonator is Δνcav, a total internal loss of the external resonator is δ, and a speed of light is c.
As described above, in a wavelength conversion device or a wavelength conversion method according to an embodiment of the present invention, a reflectance Rin of an input coupling element in an external resonator is selected as represented by the equations 1 and 2.
In the related art, a reflectance of an input coupling element in an external resonator is selected to be almost equal to an internal loss of the external resonator in order to perform impedance matching.
In contrast, according to an embodiment of the present invention, a frequency jitter of a fundamental wave light source that is a noise source for wavelength converted light may be reduced. Further, according to an embodiment of the present invention, in view of a frequency line width of a resonator Δνcav, a noise appearing in wavelength converted light may be reduced by selecting a reflectance of an input coupling element Rin according to properties of a fundamental wave light source, so that the frequency line width Δνcav is more significant than a frequency jitter of the fundamental wave light source fjitter as represented by the equation 2.
Thus, according to an embodiment of the present invention, a noise of wavelength converted light caused by such a frequency jitter of a fundamental wave light source may be reliably reduced. In the related art, a semiconductor laser such as a distributed feedback semiconductor laser or a external resonator diode laser may be difficult to use as a fundamental wave light source in a wavelength conversion device, because a frequency jitter is relatively high. However, such a relatively inexpensive and small fundamental wave light source may be used in a configuration according to an embodiment of the present invention.
According to a wavelength conversion device or a wavelength conversion method according to an embodiment of the present invention, a noise of wavelength converted light may be reduced.
A best mode for carrying out the present invention will be described below; however, the present invention is not limited to the following examples.
In such a configuration, fundamental wave light emitted from the fundamental wave light source 11 is collected on the input coupling element 21 by the capacitor lens 13 through the phase modulator 12. Laser light incident to the external resonator 20 from the input coupling element 21 is amplified through multiple interference in the resonator, and output light wavelength converted by the nonlinear optical element 17 is output outside from a half mirror 22, for example. Light reflected by the input coupling element 21 is detected in the photodetector 14. A position of an electromagnetic actuator 16 is controlled by the control circuit 15 using a detection signal generated by the photodetector 14 to oscillate incident light, so that harmonic light may be efficiently obtained from the nonlinear optical element 17.
In this wavelength conversion device, a distributed feedback (DFB) fiber may be used as the fundamental wave light source as shown in
Excitation light output from the excitation laser 34 reciprocates between the wavelength division multiplexing elements 31 and 33 to excite the DFB fiber 32. Excited light is output the outside through the wavelength division multiplexing element 33 as indicated by an arrow Lf.
Light having a narrow spectral width, specifically, light in a single longitudinal mode may be obtained using such a DFB fiber laser.
According to embodiments of the present invention, the relatively high noise was focused on when proceeding with the following discussion.
As described above, in a wavelength conversion device of the related art, a transmittance of an input coupling element in an external resonator Tin (=1−Rin) is selected to be almost equal to a total internal loss in order to perform impedance matching for the external resonator. U.S. Pat. No. 5,027,361 discloses an example of selecting such a transmittance of an input coupling element taking into consideration wavelength conversion efficiency of a nonlinear optical element placed in an external resonator, in addition to such an internal loss.
In contrast, as described above, the present inventors have found that there is a more important factor for reducing a noise.
A typical noise source is an intensity noise of an excitation laser of a fundamental wave light source and disturbance, and the noise Nc shown in
On the other hand, a noise is caused by a frequency jitter of an excitation laser of a fundamental wave light source. That is, an unsteady noise indicated by Ns in
Accordingly, a physical model is proposed as shown in
In contrast, when the width of a frequency acceptance B2 is increased by reducing a finesse intentionally as shown in
Here, a change in output of wavelength converted light in the wavelength conversion device having a configuration shown in
In a method of the related art, as described above, a transmittance of the input coupling element 21 is designed to satisfy the expression (1):
Tin≈δ (1)
where Tin represents a transmittance and δ represents a total internal loss.
In an embodiment of the present invention, a reflectance of the input coupling element Rin is selected based on the expression 1 to determine a frequency line width of the external resonator, so that a maximum frequency jitter of an excitation laser Δfjitter satisfies the expression (2):
Δνcav≧Δfjitter (2)
as represented by the expression (2).
For example, when the aforementioned DFB semiconductor laser as shown in
In contrast, a transmittance selected by a method of an embodiment of the present invention obtained falls in a range indicated by a region A3, and a frequency line width Δνcav is relatively large and is about 4 MHz as in the example shown in
When an NPRO (non-planar ring oscillator) type laser is used as the fundamental wave light source, for example, the laser has a frequency line width of about 1 kHz to several kHz. Accordingly, a noise scarcely appears in wavelength converted light even in a configuration the same as that of the related art.
On the other hand, when using, as the fundamental wave light source, a laser apparatus having a frequency line width of more than 100 kHz, specifically, a laser apparatus having a frequency line width represented by the expression:
Δνcav>100 kHz (3)
The fundamental wave light source according to an embodiment of the present invention may preferably be used to select a reflectance of the input coupling element in the external resonator according to the expression (2) and the expression (1).
Specifically, SHG of a DFB fiber laser having an oscillation wavelength of 532 nm, for example, is used as the fundamental wave light source, BBO is used as the nonlinear optical crystal of the external resonator, and an internal loss is 0.2%. In this case, a wavelength converted light intensity is measured for a comparative example in which a transmittance of the input coupling element in the external resonator Tin (that is, a reflectance Rin) is selected by a method of the related art and for an embodiment of the present invention in which a reflectance Rin is selected based on the expression 1 and the expression (2). The results are shown in
As a frequency line width Δνcav is increased, a frequency acceptance increases, so that an effect by a frequency noise may be reduced. However, when Δνcav exceeds 200 MHz, a finesse is 2 or less. Accordingly, an advantage of using a resonator, that is, an amplification effect by multiple interference may not be achieved and an output may be decreased. Therefore, in a wavelength conversion device or a wavelength conversion method according to an embodiment of the present invention, a reflectance of an input coupling element in an external resonator is preferably selected so that a frequency line width Δνcav is less than 200 MHz. In practice, a frequency line width Δνcav is preferably about 2 MHz to several tens MHz.
In the above-described example, a DFB semiconductor laser is used as a fundamental wave light source; however, an embodiment of the present invention is used in cases where various other lasers are used such as semiconductor lasers having a relatively high frequency jitter. For example, an embodiment of the present invention is also used in a case where an external resonator diode laser (ECDL) shown in
As described above, according to a wavelength conversion device according to an embodiment of the present invention, an intensity noise of wavelength converted light may be remarkably reduced. In particular, in a case where a light source having a high frequency jitter such as a DFB fiber laser, ECDL, or DFG semiconductor laser is used as a fundamental wave light source, an intensity noise of wavelength converted light may be reliably reduced. That is, a relatively inexpensive laser light source such as a DFB fiber laser may be used as a fundamental wave light source, a cost may be reduced, and a device may be simplified and reduced in size.
A noise of wavelength converted light may be reduced according to an embodiment of the present invention. Therefore, when an embodiment of the present invention is used in an illumination light source used for the aforementioned inspection apparatus for a semiconductor apparatus, a semiconductor wafer, or the like (wavelength: 190 to 900 nm, for example), excellent inspection may be performed without impairing inspection accuracy.
Further, when a wavelength conversion device or a wavelength conversion method according to an embodiment of the present invention is used in an illumination light source for a projector as an imaging apparatus (wavelength: 400 to 600 nm, for example), a noise of the illumination light may be reduced and an excellent image may be displayed. Moreover, wavelength converted light output from a wavelength conversion device according to an embodiment of the present invention may be used as an illumination light source for a dark field microscope by which high-speed scanning is preferably performed. A noise may be reduced also in this case, and therefore excellent microscopic observation may be performed. In addition, when an embodiment of the present invention is used for light source devices in which various kinds of wavelength conversion are performed such as a laser for PDT (photodynamic therapy) (wavelength: 500 to 700 nm, for example), a laser for a disc cutter (wavelength: 190 to 400 nm, for example), a light source for a laser show (wavelength: 450 to 680 nm, for example), and a fluorescent material excitation laser (wavelength: 190 to 400 nm, for example), a noise may be reduced, a cost may be reduced, and a device may be simplified and reduced in size.
A wavelength conversion device according to an embodiment of the present invention may have the aforementioned configuration as shown in
Further, as shown in
As described above, an embodiment of the present invention may also be used in a case where a fundamental wave light source includes a wavelength conversion section, for example, an external resonator-type wavelength conversion section that outputs SHG light. In this case, a fundamental wave light source includes an external resonator and a reflectance of an input coupling element is selected according to the expressions 1 and 2, so that a noise may be reduced.
In a case where a fundamental wave light source includes two or more external resonators, when a reflectance of an input coupling element in at least one of the external resonators is selected as represented by the expressions 1 and 2, a noise may be reduced as compared with a case of the related art.
An embodiment of the present invention is not limited to a wavelength conversion device having a configuration shown in each of the aforementioned embodiments. Various transformations and modifications are possible without departing from the scope of the present invention, where a fundamental wave light source is connected to an external resonator through a fiber or the like, for example.
It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and alterations may occur depending on design requirements and other factors insofar as they are within the scope of the appended claims or the equivalents thereof.
Number | Date | Country | Kind |
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2006-172822 | Jun 2006 | JP | national |
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Number | Date | Country | |
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20090046351 A1 | Feb 2009 | US |