Claims
- 1. A method for fabricating a quantum-well sensing array, comprising:
fabricating quantum-well layers over a substrate; forming a patterned PMMA layer over the quantum-well layers; performing reactive ion etching to the quantum-well layers through the patterned PMMA layer to form an array of pyramid-shaped voids in the quantum-well layers with boundary planes differ from semiconductor crystallographic planes; and filling the pyramid-shaped voids with a non-radiation-sensing insulator material.
- 2. The method as in claim 1, further comprising making each side surface of each pyramid-shaped void to be about 45 degrees with respect to the quantum-well layers.
- 3. The device as in claim 1, further comprising making the quantum-well layers to have two different quantum-well structures stacking together to absorb light of at least two different wavelengths.
- 4. A method, comprising accepting incident radiation passing along an axis which is substantially perpendicular to an axis of a chip holding a radiation sensitive elements;
reflecting said incident radiation along a reflected radiation axis which is substantially parallel with an axis of said radiation sensitive element, and detecting said radiation along said axis of said radiation sensitive element.
- 5. A method as in claim 4, further comprising reflecting said radiation which has passed along said reflected radiation axis in a direction substantially towards said incident radiation as not absorbed reflected radiation.
- 6. A method as in claim 4, wherein said detecting comprises using a plurality of quantum well layers which are formed in parallel to one another to detect said radiation.
- 7. A method as in claim 4, wherein each of said plurality of quantum well layers is sensitive to a specified type of light.
- 8. A method, comprising:
forming a plurality of reflectors with at least a number of different reflecting wavelengths, such that at least some of said reflectors are sensitive to and preferentially reflect wavelengths of light which are different than those reflected by others of said reflectors; forming a plurality of radiation sensitive elements, which are sensitive two different wavelengths of radiation; using said plurality of reflectors to reflect incident radiation to a direction along an axis that is substantially perpendicular to an axis of the chip holding said plurality of radiation sensitive elements.
- 9. A method as in claim 8, further comprising reflecting the incident radiation that is not absorbed as not absorbed reflected radiation.
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a divisional application of and claims priority to U.S. application Ser. No. 09/443,925, filed Nov. 19, 1999, which claims the benefit of U.S. provisional application serial No. 60/109,330, filed Nov. 20, 1998.
ORIGIN
[0002] The devices and techniques described herein were made in the performance of work under a NASA contract, and are subject to the provisions of Public Law 96-517 (35 U.S.C. §202) in which the Contractor has elected to retain title.
Provisional Applications (1)
|
Number |
Date |
Country |
|
60109330 |
Nov 1998 |
US |
Divisions (1)
|
Number |
Date |
Country |
Parent |
09443925 |
Nov 1999 |
US |
Child |
10409866 |
Apr 2003 |
US |