1. Field of the Invention
The present invention relates to a white light-emitting diode package structure and a method for making the same, and particularly relates to a white light-emitting diode package structure for simplifying package process and a method for making the same.
2. Description of Related Art
Referring to
The step S100 is: referring to
The step S102 is: referring to
The step S104 is: referring to
The step S106 is: referring to
The step S108 is: referring to
Hence, light beams L1 generated by the LED die 1 pass through the phosphor layer 2 to generate white light beams L2, and the white light beams L2 pass through the focusing lens 4 to generate focusing white light beams L3.
However, the light beams L1 can pass through the phosphor layer 2 after passing through the transparent package body T, so that the light beams L1 are refracted easily when passing though the transparent package body T. Therefore, the light-emitting efficiency is reduced by using the transparent package body T.
One particular aspect of the present invention is to provide a white light-emitting diode package structure for simplifying package process and a method for making the same. A phosphor layer is formed on an LED die directly and at least two openings pass through the phosphor layer to expose a positive conductive side and a negative conductive side of the LED die. Hence, light beams generated by the LED die can pass through the phosphor layer directly to generate white light beams without passing through a transparent package body. Therefore, the light-emitting efficiency of the present invention is increased by omitting the transparent package body.
In order to achieve the above-mentioned aspects, the present invention provides a white light-emitting diode package structure for simplifying package process, including: a substrate unit, a light-emitting unit, a phosphor unit and a conductive unit. The light-emitting unit is disposed on the substrate. The light-emitting unit has a light-emitting body, a positive conductive layer and a negative conductive layer formed on the light-emitting body, an insulative layer formed between the positive conductive layer and the negative conductive layer, and a light-emitting area formed in the light-emitting body. The phosphor unit has a phosphor layer formed on the light-emitting unit and at least two openings for respectively exposing one partial surface of the positive electrode layer and one partial surface of the negative electrode layer. The conductive unit has at least two conductive wires respectively passing through the two openings in order to electrically connect the positive electrode layer with the substrate unit and electrically connect the negative electrode layer with the substrate unit.
In order to achieve the above-mentioned aspects, the present invention provides a white light-emitting diode package structure for simplifying package process, including: a substrate unit, a light-emitting unit, a phosphor unit and a conductive unit. The light-emitting unit is disposed on the substrate, and the light-emitting unit has a positive conductive layer and a negative conductive layer. The phosphor unit has a phosphor layer formed on the light-emitting unit and at least two openings for respectively exposing one partial surface of the positive electrode layer and one partial surface of the negative electrode layer. The conductive unit has at least two conductive wires respectively passing through the two openings in order to electrically connect the positive electrode layer with the substrate unit and electrically connect the negative electrode layer with the substrate unit.
In order to achieve the above-mentioned aspects, the present invention provides a method for making a white light-emitting diode package structure for simplifying package process, including: providing a wafer having a plurality of light-emitting units, and each light-emitting unit having a light-emitting body, a positive conductive layer and a negative conductive layer formed on the light-emitting body, an insulative layer formed between the positive conductive layer and the negative conductive layer, and a light-emitting area formed in the light-emitting body; forming a phosphor layer on the light-emitting unit; forming at least two openings on the phosphor layer in order to respectively expose one partial surface of the positive electrode layer and one partial surface of the negative electrode layer; cutting the wafer to form a plurality of single light-emitting units separated from each other; respectively arranging the light-emitting units on a plurality of substrate units; and electrically connecting the positive electrode layer of each light-emitting unit with each substrate unit and electrically connecting the negative electrode layer of each light-emitting unit with each substrate unit by at least two conductive wires respectively passing through the two openings.
Hence, light beams generated by the LED die can pass through the phosphor layer directly to generate white light beams without passing through a transparent package body. Therefore, the light-emitting efficiency of the present invention is increased by omitting the transparent package body.
In order to further understand the techniques, means and effects the present invention takes for achieving the prescribed objectives, the following detailed descriptions and appended drawings are hereby referred, such that, through which, the purposes, features and aspects of the present invention can be thoroughly and concretely appreciated; however, the appended drawings are merely provided for reference and illustration, without any intention to be used for limiting the present invention.
Referring to
The step S200 is: referring to
Moreover, the light-emitting body 10a has an Al2O3 substrate 100a, a negative GaN conductive layer 101a formed on the Al2O3 substrate 100a, and a positive GaN conductive layer 102a formed on the negative GaN conductive layer 101a. The positive conductive layer Pa is formed on the positive GaN conductive layer 102a, the negative conductive layer Na is formed on the negative GaN conductive layer 101a, and the insulative layer 11a is formed on the negative GaN conductive layer 101a and disposed between the positive conductive layer Pa, the negative conductive layer Na and the positive GaN conductive layer 102a. In addition, the positive conductive layer Pa has a positive conductive area P1a formed on its top surface, the negative conductive layer Na has a negative conductive area N1a formed on its top surface, and one part of the positive conductive area P1a and one part of the negative conductive area N1a are covered by the insulative layer 11a.
Moreover, the light-emitting unit 1a has a reflective layer 12a disposed on a bottom side of the light-emitting body 10a, so that light beams L1a generated from the light-emitting area Aa are reflected by the reflective layer 12a to form upward light beams L2a.
The step S202 is: referring to
The step S204 is: referring to
The step S206 is: referring to
The step S208 is: referring to
The step S210 is: referring to
The step S212 is: referring to
Referring to FIGS. 2D1, 2D2 and 2E, the first embodiment of the present invention provides a white light-emitting diode package structure for simplifying package process, including: a substrate unit 3a, a light-emitting unit 1a, a phosphor unit 2a′ and a conductive unit Ca.
The substrate unit 3a has a substrate body 30a, a positive conductive pad 3Pa disposed on the top surface of the substrate body 30a, and a negative conductive pad 3Na disposed on the top surface of the substrate body 30a.
The light-emitting unit 1a is disposed on the substrate unit 3a. The light-emitting unit 1a has a light-emitting body 10a, a positive conductive layer Pa and a negative conductive layer Na formed on the light-emitting body 10a, an insulative layer 11a formed between the positive conductive layer Pa and the negative conductive layer Na, and a light-emitting area Aa formed in the light-emitting body 10a. In addition, the insulative layers 11a can be polymer layers or ceramic layers.
The light-emitting body 10a has an Al2O3 substrate 100a, a negative GaN conductive layer 101a formed on the Al2O3 substrate 100a, and a positive GaN conductive layer 102a formed on the negative GaN conductive layer 101a. The positive conductive layer Pa is formed on the positive GaN conductive layer 102a, the negative conductive layer Na is formed on the negative GaN conductive layer 101a, and the insulative layer 11a is formed on the negative GaN conductive layer 101a and disposed between the positive conductive layer Pa, the negative conductive layer Na and the positive GaN conductive layer 102a. In addition, the positive conductive layer Pa has a positive conductive area P1a formed on its top surface, the negative conductive layer Na has a negative conductive area N1a formed on its top surface, and one part of the positive conductive area P1a and one part of the negative conductive area N1a are covered by the insulative layer 11a.
The phosphor unit 2a′ has a phosphor layer 20a′ formed on the light-emitting unit 1a and at least two openings 21a for respectively exposing one partial surface of the positive electrode layer Pa and one partial surface of the negative electrode layer Na.
The conductive unit Ca has at least two conductive wires C1a respectively passing through the two openings 21a in order to electrically connect the positive electrode layer Pa of the light-emitting unit 1a with the positive conductive pad 3Pa of the substrate unit 3a and electrically connect the negative electrode layer Na of the light-emitting unit 1a with the negative conductive pad 3Na of the substrate unit 3a.
Furthermore, the light-emitting unit 1a has a reflective layer 12a disposed on a bottom side of the light-emitting body 10a, so that light beams L1a generated from the light-emitting area Aa are reflected by the reflective layer 12a to form upward light beams L2a, and the upward light beams L2a pass through the phosphor layer 20a′ in order to generate white light beams L3a.
The first embodiment further includes a focusing lens 4a disposed on the substrate unit 3a for covering each light-emitting unit 1a, the phosphor unit 2a′ and the conductive unit Ca. Hence, the white light beams L3a pass through the focusing lens 4a to generate focusing white light beams L4a.
Referring to
The light-emitting unit 1b is disposed on the substrate unit 3b. The light-emitting unit 1b has a positive conductive layer Pb and a negative conductive layer Nb. The phosphor unit 2b has a phosphor layer 20b formed on the light-emitting unit 1b and at least two openings 21b for respectively exposing one partial surface of the positive electrode layer Pb and one partial surface of the negative electrode layer Nb. The conductive unit Cb has at least two conductive wires C1b respectively passing through the two openings 21b in order to electrically connect the positive electrode layer Pb with the substrate unit 3b and electrically connect the negative electrode layer Nb with the substrate unit 3b. Furthermore, the second embodiment further includes a focusing lens 4b disposed on each substrate unit 3b for covering the light-emitting unit 1b, the phosphor unit 2b and the conductive unit Cb.
In conclusion, the phosphor layer is formed on an LED die (the light-emitting unit) directly and the two openings pass through the phosphor layer to expose a positive conductive side and a negative conductive side of the LED die. Hence, light beams generated by the LED die can pass through the phosphor layer directly to generate white light beams without passing through a transparent package body. Therefore, the light-emitting efficiency of the present invention is increased by omitting the transparent package body.
The above-mentioned descriptions represent merely the preferred embodiment of the present invention, without any intention to limit the scope of the present invention thereto. Various equivalent changes, alternations or modifications based on the claims of present invention are all consequently viewed as being embraced by the scope of the present invention.