The present invention relates generally to electric power conversion, and more particularly, to a voltage to current converter system.
Various circuit structures exist that map a monitored voltage to a current magnitude. These circuits often utilize some form of emitter-follower arrangement using bipolar, J-FET or MOSFET devices that exhibit voltage offsets that marginalize the transfer function accuracy. Operational amplifiers (op-amps) are often incorporated into the feedback paths of these devices in an attempt to correct these offset errors and improve precision. However, the use of op-amps reduces operating bandwidth and increases settling times. Moreover, these devices typically require input voltage levels limited to the supply voltage range of the circuit.
These limitations are problematic as many applications (for example, switched mode power conversion) require voltage to current conversion at voltage levels that are orders of magnitude greater than the circuit supply levels. And while voltage dividers may be used to lower input voltage levels between circuit supply levels, such arrangements introduce paths for noise in addition to decreasing the signal bandwidth. Moreover, digital low voltage supplies often require voltage level monitoring at fractions of the bias supply. Further still, in switched mode power converters, voltage to current transduction is required to monitor transient events, thereby requiring both wide bandwidth and fast transient response.
Alternative voltage to current converter arrangements are desired.
A voltage to current converting circuit according to an embodiment of the present invention comprises a composite amplifier arrangement which separates op-amp offset voltage correction from the wide-bandwidth signal path used for voltage to current conversion. A voltage to current converter according to an aspect of the invention does not unduly limit bandwidth or response time in order to achieve precision, and can accurately provide a current proportional to voltage at levels that are above its supply levels as well as voltage levels extending below its supply levels down to zero.
A single common-base transistor is provided for basic voltage to current conversion. The transistor maintains high speed response, wide-bandwidth operation, and functionality at voltage levels above and below the supply levels of the system. A dc-stable path is operatively connected to the emitter of the common-base transistor and includes an operation amplifier. The op-amp is configured to correct for bias supply level fluctuations and transistor temperature drift. This arrangement maintains a consistent transfer function independent of the input voltage level.
Reference will now be made in detail to the present exemplary embodiments of the invention, examples of which are illustrated in the accompanying drawings.
With reference to
Still referring to
A common-base transistor circuit 101 is provided for the basic voltage to current conversion. The common-base transistor circuit 101 comprises a conventional PNP bipolar junction transistor (BJT) Q46 with its emitter terminal connected to an input voltage source Vin and base terminal connected to a bias supply source Vbias. The output current Ic is provided at the collector terminal. The bias supply Vbias comprises a conventional voltage source which enables forward drive of current through the transistor Q46 on a continuing basis according to Vin. This arrangement provides high-speed, wide bandwidth voltage to current conversion at voltage levels both above and below the supply levels.
In an ideal circuit, the current supplied to the emitter terminal Ie is a function of only the input voltage Vin and resistor 214. However, as noted above with respect to the prior art, changes in both the temperature of transistor Q46 as well as in bias supply levels Vbias vary the output collector current Ic. The circuit arrangement embodied in
An op-amp circuit 30 provides a means for this offset compensation. The non-inverting input terminal 32 of op-amp 31 is connected between the emitter terminal of transistor Q46 and resistor R214. The non-inverting input 32 is provided with an offset voltage consisting of the base-emitter voltage Vbe and the supply voltage Vbias, which correspond to temperature and supply voltage variations in transistor Q46 respectively. The op-amp 31 functions in a traditional fashion, attempting to keep the inverting input 33 equal to this offset voltage applied to the non-inverting input 32. By setting an appropriate closed loop gain of the op-amp such that the output Vcomp is slightly above the offset level (Vbias+Vbe), the amount of current provided through resistor R134 (and applied to the emitter terminal of Q46) will compensate for the offset voltage. The following describes resistor ratios of the op-amp feedback resistors R135 and R217, as well as resistors R214 and R134 that achieve this correction.
The current through the resistor R214 is a factor of the difference between the input voltage and the offset voltage (reflected in Vbias and Vbe) and resistor R214 such that:
[Vin−(Vbias+Vbe)]/R214
Op-amp 31 amplifies this offset voltage with a gain G determined by the feedback loop (resistors R135 and R217) connected to the inverting input 33. Specifically the gain may be represented as:
G=(R135+R217)/R217
The current provided to the emitter of transistor Q46 thus comprises both the current through resistor R214 and the offset compensation current through resistor R134:
Ie={(Vin−[Vbias+Vbe])/R214}+{(Vcomp−[Vbias+Vbe])/R134}
Simplifying the offset voltage as follows:
Vbias+Vbe=Vx
And defining Vcomp as the offset voltage multiplied by the op-amp 31 gain G:
Vcomp=G(Vx)
The current Ie supplied to the emitter of transistor Q46 is reduced to:
Ie=(Vin/R214)+Vx{[(G−1)/R134]−(1/R214)})
As the ideal current through the emitter terminal should be set only by the input voltage Vin and resistor R214 (Ie=Vin/R214), the Vx term in the above equation should be zeroed in order to achieve ideal offset correction.
Accordingly, the resistors should be chosen as follows: Setting the gain G to an arbitrary number, for example 1.1, yields:
Vx{[(G−1)/R134]−(1/R214)}=Vx{[(0.1)/R134]−(R214)}
Setting the contents of { }=to 0 yields:
R214/R134=10 and R135/R217=0.1
Resistance values for resistors R214, R134, R135 and R217 are chosen according to these relationships. With proper values in place, the circuit 30 provides the function of auto-correcting for variations in Vbias as well as temperature effects and associated amplitudes reflected in Vbe. In this way, precise voltage to current conversion is achieved without introducing op-amp based corrective loops into the wide-band signal path.
While the above-described embodiment of the present invention is implemented with a PNP bipolar junction transistor, other types of transistors which produce offset voltages may be used, for example, a PFET, without departing from the scope of the present invention.
While the foregoing describes exemplary embodiments and implementations, it will be apparent to those skilled in the art that various modifications and variations can be made to the present invention without departing from the spirit and scope of the invention.
Number | Name | Date | Kind |
---|---|---|---|
4709323 | Lien | Nov 1987 | A |
5530335 | Decker et al. | Jun 1996 | A |
5646518 | Lakshmikumar et al. | Jul 1997 | A |
5648731 | Decker et al. | Jul 1997 | A |
5880610 | Nishizono et al. | Mar 1999 | A |
6118676 | Divan et al. | Sep 2000 | A |
6369618 | Bloodworth et al. | Apr 2002 | B1 |
6587356 | Zhu et al. | Jul 2003 | B2 |
6788033 | Vinciarelli | Sep 2004 | B2 |
7023187 | Shearon et al. | Apr 2006 | B2 |
7154250 | Vinciarelli | Dec 2006 | B2 |
7248098 | Teo | Jul 2007 | B1 |
7382114 | Groom | Jun 2008 | B2 |
7560909 | Coleman | Jul 2009 | B2 |
7596006 | Granat | Sep 2009 | B1 |
7619323 | Tan et al. | Nov 2009 | B2 |
7656141 | Granat | Feb 2010 | B1 |
7714547 | Fogg et al. | May 2010 | B2 |
7777459 | Williams | Aug 2010 | B2 |
7782027 | Williams | Aug 2010 | B2 |
7786712 | Williams | Aug 2010 | B2 |
7821238 | Li | Oct 2010 | B1 |
7889524 | Lee et al. | Feb 2011 | B2 |
20100013304 | Heineman | Jan 2010 | A1 |
20100013305 | Heineman | Jan 2010 | A1 |
20100013306 | Heineman et al. | Jan 2010 | A1 |
20100013307 | Heineman et al. | Jan 2010 | A1 |
20100283322 | Wibben | Nov 2010 | A1 |
20110006743 | Fabbro | Jan 2011 | A1 |
20110043172 | Dearn | Feb 2011 | A1 |
Number | Date | Country | |
---|---|---|---|
20110267111 A1 | Nov 2011 | US |