Claims
- 1. A solid-state light detector comprising:a) a solid-state substrate comprising a low-impedence material; b) a resistive layer deposited on top of the substrate; c) an n-p diode formed on said resistive layer, wherein said n-p diode is formed by n+ electrodes buried in a p-type epitaxial layer; and d) a first electrical contact in communication with the solid-state substrate, and a second electrical contact in communication with the diode wherein said first and second electrical contacts operate to collect an electrical signal.
- 2. The light detector of claim 1, wherein the low-impedance material is silicon.
- 3. The solid-state detector of claim 2, wherein the resistive layer comprises amorphous silicon.
- 4. The solid-state detector of claim 2, wherein the resistive layer comprises silicon oxygen compounds.
- 5. The light detector of claim 1, further comprising:a) a means for processing the electrical signal; and b) a means for generating an output.
- 6. The light detector of claim 5, wherein the output is an estimate of a physiological characteristic of an object.
- 7. The light detector of claim 5, wherein the output is an estimate of a physical characteristic of an object.
- 8. The light detector of claim 5, wherein the means for processing of the electrical signal includes an amplifier.
- 9. The light detector of claim 8, wherein the means for processing of the electrical signal digitizes the signal.
Parent Case Info
This is a continuation of application Ser. No. 08/771,207, filed Dec. 20, 1996, now issued as U.S. Pat. No. 5,844,291.
US Referenced Citations (7)
Non-Patent Literature Citations (1)
Entry |
Bisello et al., “Metal-Resistive layer-Silicon (MRS) avalanche detectors with negarive feedback,” Nuclear Instruments and Methods in Phsyics Research A 360 (1995) 83-86, 1995. |
Continuations (1)
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Number |
Date |
Country |
Parent |
08/771207 |
Dec 1996 |
US |
Child |
09/201541 |
|
US |