The present application is related to wire grid polarizers.
A wire grid polarizer can divide light into two different polarization states. One polarization state can primarily pass through the wire grid polarizer. The other polarization state can be primarily absorbed or reflected. The effectiveness or performance of wire grid polarizers is based on (a) high transmission of a predominantly transmitted polarization (sometimes called Tp) and (b) minimal transmission of an opposite polarization (sometimes called Ts).
It can be beneficial to have high contrast (Tp/Ts). Contrast can be improved by increasing transmission of the predominantly transmitted polarization (e.g. increasing Tp) and by decreasing, transmission of the opposite polarization (e.g. decreasing Ts).
If the reflected light beam will be used, it can be helpful to have high reflectance of the opposite polarization (e.g. high Rs). For a reflective wire grid polarizer, efficiency (Tp*Rs) is a useful indicator of wire grid polarizer performance. If the reflected light beam is not used, and if reflected light will interfere with the optical system, it can be helpful to have low reflectance of the opposite polarization (e.g. low Rs). Thus, the percent reflection of the opposite polarization (Rs) can also be a useful indicator of polarizer performance.
Definitions. The following definitions, including plurals of the same, apply throughout this patent application.
As used herein, the term “conformal layer” means a continuous thin film that conforms to the contours of feature topology. For example, a minimum thickness across the entire conformal layer can be greater than 1 nm and a maximum thickness across the entire conformal layer can be ≤20 nm. As another example, a maximum thickness across the entire conformal layer divided by a minimum thickness across the entire conformal layer can be ≤2, ≤3, ≤5, ≤10, or ≤20.
As used herein, the terms “on”, “located on”, “located at”, and “located over” mean located directly on or located over with some other solid material between. The terms “located directly on”, “adjoin”, “adjoins”, and “adjoining” mean direct and immediate contact.
As used herein, the term “nm” means nanometer(s).
Ribs or wires of wire grid polarizers, especially for polarization of visible or ultraviolet light, can be small and delicate with nanometer-sized pitch, wire-width, and wire-height. Wire grid polarizers are used in systems (e.g. computer projectors, semiconductor inspection tools, etc.) that require high performance. Corroded wires can degrade system performance. Wire oxidation can reduce contrast. Therefore, it can be useful to protect the wires from corrosion and oxidation.
Wire grid polarizers have traditionally been made with a protective chemical in a conformal layer. See for example patents U.S. Pat. Nos. 6,785,050, 9,995,864, and 10,054,717. However, material of the protective chemical can degrade polarizer performance. Wire grid polarizer manufacturers have reluctantly accepted this reduced performance because of a greater need to protect the wires from corrosion and oxidation. Thus, there has been a tradeoff between higher performance and protection of the wires.
The present invention provides wire grid polarizers 10, 20, 30, and 40, and methods of making wire grid polarizers, without this tradeoff. Thus, the present invention provides protection for wires 12 of wire grid polarizers 10, 20, 30, and 40 without any, or with less, performance degradation.
As illustrated in
Each wire 12 can have a proximal-end PE closer to the substrate 11, a distal-end DE farther from the substrate 11, and a sidewall SW on each of two opposite sides of each wire 12. Each sidewall SW can extend from the proximal-end PE to the distal-end DE. Each sidewall SW can face a channel 13.
The wire grid polarizers 10, 20, 30, and 40 can include protective-layers PL to protect the wires 12 from corrosion, oxidation, or both. Material of the protective-layers PL at the distal-end DE can degrade polarizer performance. The protective-layers PL can be mostly or solely on sidewalls SW of the wires 12. The protective-layers PL on sidewalls SW does not cause performance degradation like protective material on the distal-end DE. But the protective-layers PL on sidewalls SW do protect the wires 12.
A protective-layer PL can be located on each sidewall SW. Each protective-layer PL can adjoin the sidewall SW of the wire 12. The wire 12 can be sandwiched between a pair of the protective-layers PL.
Each protective-layer PL can have a minimum thickness TP of at least 0.1 nm, 0.5 nm, or 1 nm. A thicker protective-layer PL provides better corrosion and oxidation protection. Each protective-layer PL can have a maximum thickness TP of less than or equal to 4 nm, 5 nm, 10 nm, or 20 nm on the sidewall SW. A thicker protective-layer PL is more expensive. The thickness TP is measured perpendicular to the sidewall SW at the location of measurement.
The pair of protective-layers PL can be separated from each other by a region on the distal-end DE that is free of the protective-layer PL. The distal-end DE can be free of the protective-layer PL.
A region on the substrate 11 in the channel 13 can be free of the protective-layer PL. The substrate 11 in the channel 13 can be free of the protective-layer PL. Thus, each protective-layer PL can be separate from the protective-layer PL on an adjacent wire 12.
Alternatively, as illustrated in
For example, a thickness TP of the protective-layer PL on the sidewalls SW can be at least 5 times greater, 25 times greater, or 100 times greater than a maximum thickness TS of the protective-layer PL on the substrate 11 in the channels 13. As another example, a thickness TP of the protective-layer PL on the sidewalls SW can be at least 5 times greater, 25 times greater, or 100 times greater than a maximum thickness TD of the protective-layer PL on the distal-end DE. The protective-layer PL of wire grid polarizer 40 can be combined with the features of any other wire grid polarizer described herein, including the wire grid polarizers in
The protective-layers PL are particularly useful for a wire grid polarizer with a multi-layer stack, and with a layer needing protection that is lower in the stack. For example, each wire 12 of wire grid polarizer 10 can include a lower-layer LL closer to the proximal-end PE and an upper-layer UL closer to the distal-end DE. The substrate 11, the pair of protective-layers PL, and the upper-layer UL can encircle the lower-layer LL. The upper-layer UL can be more resistant to corrosion in water, more resistant to oxidation, or both than the lower-layer LL. The upper-layer UL can be exposed to air and water, but is protected because it is more inert than the lower-layer LL.
An example material for the upper-layer UL is silicon. Example materials for the lower-layer LL include germanium, aluminum, or both.
The lower-layer LL and the upper-layer UL of wire grid polarizer 10 can be combined with the features of any other wire grid polarizer described herein, including the wire grid polarizers in
The protective-layer PL can include material(s) to protect the wires 12 from oxidation, corrosion, or both. For example, the protective-layer PL can include an amino phosphonate, a metal oxide, a metalloid oxide, or combinations thereof. The protective-layer PL can include a transition metal oxide. The protective-layer PL can include a post-transition metal oxide.
The protective-layer PL can include an actinide oxide. The protective-layer PL can include rare earth oxide(s), such as for example, oxides of scandium, yttrium, lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, or combinations thereof.
The protective-layer PL can include aluminum oxide, silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, hafnium oxide, zirconium oxide, or combinations thereof.
The protective-layer PL can include an oxygen-barrier and a moisture-barrier. The oxygen-barrier can be sandwiched between the moisture-barrier and the sidewall SW. The oxygen-barrier can include aluminum oxide, silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, or combinations thereof. The oxygen-barrier can protect the wire 12 from oxidation. The moisture-barrier can include hafnium oxide, zirconium oxide, or combinations thereof. The moisture-barrier can protect the wire 12 from corrosion.
The protective-layer PL can be distinct from the sidewall SW, meaning (1) there can be a boundary line or layer between the sidewall SW and the protective-layer PL; or (2) there can be some difference of material of the sidewall SW relative to a material of the protective-layer PL. For example, a native aluminum oxide can form at the sidewall SW of an aluminum wire 12. A layer of aluminum oxide (protective-layer PL) can then be applied on the wires 12 as the oxygen-barrier.
This added layer of aluminum oxide can be useful, because a thickness and density of the native aluminum oxide can be insufficient for protecting a core of the wires 12 from oxidizing. In this example, although the protective-layer PL (Al2O3) might have the same chemical formula as a surface (Al2O3) of the wires 12, the protective-layer PL can still be distinct due to (1) a boundary layer between the protective-layer PL and the wires 12 and/or (2) a difference in material properties (e.g. increased density of the protective-layer PL).
As illustrated in
Example chemistry of the hydrophobic-layer HL includes chemical formula (1), chemical formula (2), or both:
where r is a positive integer, each R1 independently is a hydrophobic group, X is a bond to the ribs, and each R3 is independently a chemical element or a group.
Each R3 can be a silane-reactive-group, —H, R1, R6, or X. Each silane-reactive-group can be —Cl, —OR6, —OCOR6, —N(R6)2, or —OH. Each R6 can be an alkyl group, an aryl group, or combinations thereof.
Each hydrophobic group can include Cf3(CF2)n or CF3(CF2)n(CH2)m. n and m are integers. Example lower boundaries for n include 1≤n, 2≤n, or 3≤n. Example upper boundaries for n include n≤3, n≤4, n≤5, n≤6, n≤8, or n≤20. Example lower boundaries for m include 1≤m or 2≤m. Example upper boundaries for in include m≤2, m≤3, m≤4, m≤5, m≤8, or m≤20.
The hydrophobic-layer HL of wire grid polarizers 20 or 30 can be combined with the features of any other wire grid polarizer described herein, including the wire grid polarizers in
For all wire grid polarizers described herein, the wires 12 can be parallel and elongated. As used herein, the term “elongated” means that wire 12 length (into the sheet of the figures) is substantially greater than wire width W12 and wire thickness T12 (see
As an alternative to the wire grid polarizer of the prior paragraph, the wires can extend in multiple different directions, can have multiple different thicknesses T12, can have multiple different widths W12, can have multiple different lengths, or combinations thereof. The wire grid polarizers described herein can be metamaterial polarizers.
A method of making a wire grid polarizer can include some or all of the following steps. These steps can be performed in the following order or other order if so specified. The wire grid polarizer, and components of the wire grid polarizer, can have properties as described above. Any additional description of properties of the wire grid polarizer in the method below, not described above, are applicable to the above described wire grid polarizers.
Steps in the method include—
In step (A), the wires 12 can be on a substrate 11. Each wire 12 can have a proximal-end PE closer to the substrate 11, a distal-end DE farther from the substrate 11, and a sidewall SW on each of two opposite sides. Each sidewall SW can face a channel 13 and can extend from the proximal-end PE to the distal-end DE.
Step (B) can include etching the protective chemical 51 anisotropically to remove the protective chemical 51 from the distal-end DE of each wire 12 and leaving the protective chemical 51 as a protective-layer PL on each sidewall SW.
Step (B) can include etching the protective chemical 51 anisotropically to remove the protective chemical 51 from the substrate 11 in the channels 13 and leaving the protective chemical 51 as a protective-layer PL on each sidewall SW.
Note that due to the direction of the anisotropic etch, it can remove most or all of the protective chemical 51 from the distal-end DE and from the substrate 11 in the channels 13, but leave the protective chemical 51 as a protective-layer PL on each sidewall SW.
Step (B) can include applying the protective chemical 51 by atomic layer deposition. Step (C) can include applying the hydrophobic-layer HL by chemical vapor deposition.
This application claims priority to US Provisional Patent Application Number US 63/160,047, filed on Mar. 12, 2021, which is incorporated herein by reference.
Number | Date | Country | |
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63160047 | Mar 2021 | US |