As the number of electronic devices wirelessly communicating with devices connected to the Internet and each other continues to increase, the need to improve mechanisms for long-range, high-data-rate wireless communication similarly increases. Areas for improvement of existing technologies include, for example, the cost of transmitters and receivers, the power used, the range of communications, the size of the transmitters and receivers, the ability to reduce interference between transmitters and receivers, etc.
Accordingly, new circuits and methods for wireless transmitters are provided.
Circuits and methods for wireless transmitters are provided. In some embodiments, circuits for a transmitter are provided, the circuits comprising: a digital-to-amplitude converter (DAC) having an input and an output, comprising: a plurality of binary weighted switching transistors, each having a gate coupled to one of a plurality of amplitude control bits, a drain, and a source, and wherein the drain of each of the plurality of binary weighted switching transistors are connected together and wherein the source of each of the plurality of binary weighted switching transistors are connected together; a first transistor having a gate coupled to an input signal and a first bias voltage, a source coupled to the drains of the plurality of binary weighted switching transistors, and a drain; a second transistor having a gate coupled to a second bias voltage, a source coupled to the drain of the first transistor, and a drain; a third transistor having a gate coupled to a third bias voltage, a source coupled to the drain of the second transistor, and a drain; a fourth transistor having a gate coupled to a fourth bias voltage, a source coupled to the drain of the third transistor, and a drain; and an inverter having an input coupled to another amplitude control bit and having an output coupled to the output of the DAC and the drain of the fourth transistor; and an antenna coupled to the output of the DAC.
In accordance with some embodiments, circuits and methods for wireless transmitters are provided.
Turning to
In some embodiments, any suitable modulation technique can be used with transmitter(s) 100. For example, in some embodiments, QAM64 modulation can be used.
As illustrated, transmitter 100 includes a local oscillator reference input 102, a frequency multiplier 104, a quadrature hybrid 106, a resistor 108, a phase modulator 110, a digital interface 112, an array driver 114, digital polar transmitter elements 116, 118, 120, and 122, transmitter outputs 124, 126, 128, and 130, serial digital inputs 132, a global biasing circuit 170, and an ESD circuit 172.
A local oscillator reference signal is received by transmitter 100 at input 102. Any suitable local oscillator reference signal having any suitable frequency can be used. For example, in some embodiments, local oscillator reference signal can have a frequency of 30 GHz.
The local oscillator reference signal is received by frequency multiplier 104 and multiplied to a higher frequency. Any suitable frequency multiplier can be used (e.g., a frequency multiplier as described below in connection with
The output of frequency multiplier 104 can be received by quadrature hybrid 106. The quadrature hybrid can be any suitable quadrature hybrid in accordance with some embodiments. As illustrated, resistor 108 can be connected from one of the inputs of the quadrature hybrid to ground to provide a reference impedance. Any suitable resistor can be used in some embodiments. For example, a 50 ohm resistor can be used.
In-phase and quadrature components of the multiplied local oscillator reference signal can be output by hybrid 106 to phase modulator 110. The phase modulator can be any suitable phase modulator, such as the phase modulator/shifter described below in connection with
Array driver 114 can receive the output of phase modulator 110 and provide a drive signal to digital polar transmitter elements 116, 118, 120, and 122 that is split evenly among the digital polar transmitter elements. Any suitable array driver can be used in some embodiments. For example, in some embodiments, the array driver described below in connection with
Digital polar transmitter elements 116, 118, 120, and 122 can drive transmitter outputs 124, 126, 128, and 130 in response to the drive signal from array driver 114 and amplitude control outputs [A0-A7] of digital interface 112. Each of transmitter outputs 124, 126, 128, and 130 can be connected to a suitable antenna. For example, in some embodiments, the antenna(s) can be phased array antennas, on-printed-circuit-board antennas, and/or any other suitable type of antenna. Any suitable number of digital polar transmitter elements can be used in some embodiments. For example, in some embodiments, four digital polar transmitter elements can be used to drive a 2×2 array of four antennas.
As further shown in
The drive signal from array driver 114 can be provided to quadrature hybrid 142. The quadrature hybrid can be any suitable quadrature hybrid in accordance with some embodiments. As illustrated, resistor 140 can be connected from one of the inputs of the quadrature hybrid to ground to provide a reference impedance. Any suitable resistor can be used in some embodiments. For example, a 50 ohm resistor can be used.
In-phase and quadrature components of the drive signal from array driver 114 can be output by hybrid 142 to phase shifter 144. The phase shifter can be any suitable phase shifter, such as the phase modulator/shifter described below in connection with
Controller can include any suitable hardware processor (e.g., a microprocessor, microcontroller, dedicated control logic, a digital signal processor, etc.), a scan chain, registers, memory, interfaces, inputs, outputs, etc. and can perform any suitable functions, such as controlling phase shifters 144, controlling bias functions, performing specialized processing for phased arrays, compensating for various implementation non-idealities that result in beam pointing error, etc.
The outputs of phase shifter 144 can be provided to limiting amplifier 146. The limiting amplifier can be any suitable limiting amplifier, such as the limiting amplifier described below in connection with
The output of limiting amplifier 146 can be provided to hybrid power DAC 148. Hybrid power DAC 148 can be any suitable hybrid power DAC in some embodiments. For example, hybrid power DAC 148 can be implemented using the hybrid power DAC described below in connection with
As shown in
Global biasing circuitry 170 can be provided, as known in the art, to generate biasing voltages in circuit 100 in accordance with some embodiments.
ESD circuitry 172 can be provided, as known in the art, to protect circuit 100 from electrostatic discharge and over-voltage conditions in accordance with some embodiments.
Turning to
As shown in
The gates of these transistors are connected to inputs b0, b1, b2, . . . , b7. These bits can be provided by phase control bits [P0,I-P7,I], [P0,Q-P7,Q], ϕ1, ϕ2, ϕ3, ϕ4 shown in
Turning to
Turning to
In some embodiments, hybrid power DAC 700 includes inputs 702 and 704, outputs 706 and 708, inverters 710, switching transistors 712, 714, and 716, stacked transistors 717, 718, 720, and 722, DC feed inductors (implemented as transmission lines) 724, gate bias inputs 726, 728, 730, and 732, two-stack drivers 734, and match blocks 736.
As shown in
As suggested by the use of N in
The binary value that is provided to inputs b0, b1, b2, . . . , bN determines the amount of amplification provided by the hybrid power DAC. These bits can be provided by amplitude control bits [A0-A7] shown in
The manner in which this amplification is achieved is further illustrated in connection with
As stated above, whether the output of the stack is at ground or 2n VDD depends on the input at the gate of transistor M11002. Referring back to
An example 800 of a two-stack driver that can be used for two-stack driver 734 in accordance with some embodiments is shown in
As shown in
As also shown in
As illustrated in
Resistors Rbig can have any suitable values sufficiently large compared to the gate impedance (of the gates connected to the corresponding bias voltage) to have suitable performance but not too large so as to affect modulation speed. In some embodiments, Rbig can be a 1 kΩ resistor.
In some embodiments, transistor 910 can be implemented as a bank of parallel binary weighted transistors (e.g., like the binary weighted transistors described above in connection with
Although specific components having specific properties (e.g., resistances, capacitance, sizes, relative sizes, voltages, etc.) are shown in
The provision of the examples described herein (as well as clauses phrased as “such as,” “e.g.,” “including,” and the like) should not be interpreted as limiting the claimed subject matter to the specific examples; rather, the examples are intended to illustrate only some of many possible aspects.
Although the invention has been described and illustrated in the foregoing illustrative embodiments, it is understood that the present disclosure has been made only by way of example, and the numerous changes in the details of implementation of the invention can be made without departing from the spirit and scope of the invention, which is only limited by the claims which follow. Features of the disclosed embodiments can be combined and rearranged in various ways.
This application is a continuation of U.S. patent application Ser. No. 14/873,177, filed Oct. 1, 2015, which claims the benefit of United States Provisional Patent Application No. 62/058,603, filed Oct. 1, 2014, each of which is hereby incorporated by reference herein in its entirety.
This invention was made with government support under contract FA8650-10-1-7042 awarded by Defense Advanced Research Projects Agency. The government has certain rights in the invention.
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Number | Date | Country | |
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20170317684 A1 | Nov 2017 | US |
Number | Date | Country | |
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62058603 | Oct 2014 | US |
Number | Date | Country | |
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Parent | 14873177 | Oct 2015 | US |
Child | 15401547 | US |