Not applicable.
This invention relates to lasers and, more particularly, to a method and an apparatus for increasing workpiece machining throughput by alternately switching a single laser beam among two or more beam paths such that one of the beam paths is employed for machining one workpiece while another the beam path is positioned for machining another workpiece.
Lasers are widely employed in a variety of research, development, and industrial operations including inspecting, processing, and micromachining a variety of electronic materials and substrates. For example, to repair a dynamic random access memory (“DRAM”), laser pulses are used to sever electrically conductive links to disconnect faulty memory cells from a DRAM device and then to activate redundant memory cells to replace the faulty memory cells. Because faulty memory cells needing link removals are randomly located, the links that need to be severed are randomly located. Thus, during the laser link repairing process, the laser pulses are fired at random pulse intervals. In another words, the laser pulses are running at a wide variable range of pulse repetition frequencies (“PRFs”), rather than at a constant PRF. For industrial processes to achieve greater production throughput, the laser pulse is fired at the target link without stopping the laser beam scanning mechanism. This production technique is referred to in the industry as “on-the-fly” (“OTF”) link processing. Other common laser applications employ laser pulses that are fired only when they are needed at random times.
However, the laser energy per pulse typically decreases with increasing PRF while laser pulse width increases with increasing PRF, characteristics that are particularly true for Q-switched, solid-state lasers. While many laser applications require randomly time-displaced laser pulses on the demand, these applications also require that the laser energy per pulse and the pulse width be kept substantially constant. For link processing on memory or other IC chips, inadequate laser energy will result in incomplete link severing, while excessive laser energy will cause unacceptable damage to the passivation structure or the silicon substrate. The acceptable range of laser pulse energies is often referred to as a “process window.” For many practical IC devices, the process window requires that laser pulse energy vary by less than 5 percent from a selected pulse energy value.
Various approaches have been implemented to ensure operation within a process window or to expand the process window. For example, U.S. Pat. No. 5,590,141 for METHOD AND APPARATUS FOR GENERATING AND EMPLOYING A HIGH DENSITY OF EXCITED IONS IN A LASANT, which is assigned to the assignee of this patent application, describes solid-state lasers having lasants exhibiting a reduced pulse energy drop off as a function of increasing PRF and, therefore, a higher usable PRF. Such lasers are, therefore, capable of generating more stable pulse energy levels when operated below their maximum PRFs.
U.S. Pat. No. 5,265,114 for SYSTEM AND METHOD FOR SELECTIVELY LASER PROCESSING A TARGET STRUCTURE OF ONE OR MORE MATERIALS OF A MULTIMATERIAL, MULTILAYER DEVICE, which is also assigned to the assignee of this patent application, describes using a longer laser wavelength such as 1,320 nanometers (“nm”) to expand the link process window to permit a wider variation of the laser pulse energy during the process.
U.S. Pat. No. 5,226,051 for LASER PUMP CONTROL FOR OUTPUT POWER STABILIZATION describes a technique of equalizing the laser pulse energy by controlling the electrical current of the pumping diodes. The technique works well in practical applications employing a laser PRF below about 25 KHz or 30 KHz.
The above-described laser processing applications typically employ infrared (“IR”) lasers having wavelengths from 1,047 nm to 1,324 nm, running at PRFs not over about 25 to 30 KHz. However, production needs are demanding much higher throughput, so lasers should be capable of operating at PRFs much higher than about 25 KHz, such as 50 KHz to 60 KHz or higher. In addition, many laser processing applications are improved by employing ultraviolet (“UV”) energy wavelengths, which are typically less than about 400 nm. Such UV wavelengths may be generated by subjecting an IR laser to a harmonic generation process that stimulates the second, third, or fourth harmonics of the IR laser. Unfortunately, due to the nature of the harmonic generation, the pulse-to-pulse energy levels of such UV lasers are particularly sensitive to time variations in PRF and laser pulse interval.
U.S. Pat. No. 6,172,325 for LASER PROCESSING POWER OUTPUT STABILIZATION APPARATUS AND METHOD EMPLOYING PROCESSING POSITION FEEDBACK, which is also assigned to the assignee of this patent application, describes a technique of operating the laser at a constant high repetition rate in conjunction with a position feedback-controlled laser pulse picking or gating device to provide laser pulse picking on demand at a random time interval that is a multiple of the laser pulse interval. This technique affords good laser pulse energy stability and high throughput.
A typical laser pulse picking or gating device is an acousto-optic modulator (“AOM”) or electro-optic modulator (“EOM”, also referred to as a Pockels cell). Typical EOM material such as KD*P or KDP suffers from relatively strong absorption at the UV wavelengths, which results in a lower damage threshold of the material at the wavelength used and local heating along the laser beam path within the device, causing changes of the half wave-plate voltage of the device. Another disadvantage of the EOM is its questionable ability to perform well at a repetition rate over 50 KHz.
AOM material is, on the other hand, quite transparent to UV light of 250 nm up to IR light of 2,000 nm, which allows the AOM to perform well throughout typical laser wavelengths within the range. An AOM can also easily accommodate the desirable gating of pulses at a repetition rate of up to a few hundred KHz. One disadvantage of the AOM is its limited diffraction efficiency of about 75-90 percent.
Referring to
When first order beam 20 is used as the working beam, the energy of the working laser pulses can be dynamically controlled from 100 percent of its maximum value down to substantially zero, as the power of RF pulses 15 changes from their maximum power to substantially zero, respectively. Because the practical limited diffraction efficiency of an AOM under an allowed maximum RF power load is about 75 percent to 90 percent, the maximum energy value of the working laser pulses is about 75 percent to 90 percent of the energy value in laser pulses 14. However, when zero order beam 16 is used as the working beam, the energy of the working laser pulses can be dynamically controlled from 100 percent of the maximum energy in laser pulses 14 down to 15 percent to 20 percent of the maximum value, as the power of RF pulses 15 changes from substantially zero to its maximum power, respectively. For memory link processing, for example, when no working laser pulse is demanded, no leakage of system laser pulse energy is permitted, i.e., the working laser pulse energy should be zero, so first order laser beam 20 is preferably used as the working beam.
With reference again to
Test results on an AOM device, such as a Model N23080-2-1.06-LTD, made by NEOS Technologies, Melbourne, Fla., showed that with only two watts of RF power, the laser beam pointing accuracy can deviate as much as one milliradian when the RF is applied on and off randomly to the AOM. This deviation is a few hundred times greater than the maximum deviation allowed for the typical memory link processing system. Laser beam quality distortion resulting from the random thermal loading on the AOM 10 will also deteriorate the focusability of the laser beam, resulting in a larger laser beam spot size at the focusing point. For applications such as the memory link processing that require the laser beam spot size to be as small as possible, this distortion is very undesirable.
What is needed, therefore, is an apparatus and a method for randomly picking working laser pulses from a high repetition rate laser pulse train without causing distortion of the laser beam and adversely affecting positioning accuracy caused by random thermal loading variation on the AOM. What is also needed is an apparatus and a method of generating working laser pulses having constant laser energy per pulse and constant pulse width on demand and/or on-the-fly at a high PRF and with high accuracy at different pulse time intervals for variety of laser applications such as laser link processing on memory chips. Moreover, what is needed is an efficient, high-throughput apparatus and method for utilizing the working laser pulses.
An object of this invention is, therefore, to provide an apparatus and a method for picking laser pulses on demand from a high repetition rate pulsed laser.
The following are several of the advantages of the invention. Embodiments of this invention perform such pulse picking with minimal thermal loading variation on the AOM to minimize distortion of the laser beam and positioning accuracy. They include an apparatus and a method for generating system on demand laser pulses having stable pulse energies and stable pulse widths at selected wavelengths from the UV to near IR and at high PRFs for high-accuracy laser processing applications, such as memory link severing. The embodiments of this invention provide an efficient, high-throughput apparatus and method for utilizing the working laser pulses.
A workpiece processing system of this invention employs a laser coupled to a beam switching device that causes a laser beam or laser pulses to switch between first and second beam positioning heads such that when the first beam positioning head directs the laser beam to process a first workpiece, the second beam positioning head moves to a next target location on a second workpiece or a second set of locations on the first workpiece. When the first beam positioning head completes processing of the first workpiece and the second beam positioning head reaches its target position, the beam switching device causes the beam to switch to the second beam positioning head and then the second beam positioning head directs the laser beam to target locations on the second workpiece while the first beam positioning head moves to its next target position.
An advantage of the present laser beam switching system is that the first and second workpieces receive almost the full power of the laser beam for processing. The total time utilization of the laser beam is increased by almost a factor of two, depending on the processing-to-moving time ratio. This greatly increases system throughput without significantly increasing system cost.
A preferred beam switching device includes first and second AOMs that are positioned adjacent to each other so that the laser beam (or laser pulses) normally pass undeflected through the AOMs and terminate on a beam blocker. When RF energy is applied to the first AOM, about 90 percent of the laser beam is diffracted as a first laser beam and 10 percent remains as a residual laser beam that terminates in the beam blocker. Likewise, when RF energy is applied to the second AOM, about 90 percent of the laser beam is diffracted as a second laser beam and 10 percent remains as a residual laser beam that terminates in the beam blocker. In this embodiment, the laser generating the laser beam is constantly running at its desired pulse repetition rate.
Employing the beam switching device is advantageous because constant operation of the laser eliminates thermal drifting of the laser output. Moreover, by operating the first and second AOMs with pulse picking methods of this invention, thermal loading variations in the AOMs will be minimized, thereby increasing laser beam positioning accuracy.
Another advantage of employing the first and second AOMs as a beam switching device is that they can operate as a laser power control device, eliminating a need for a separate laser power controller in a typical laser-based workpiece processing system. Power control is possible because the response times of the AOMs are sufficiently fast for programming laser pulse amplitudes of the switched laser beam during processing of individual target locations on the workpieces. A typical laser processing application is blind via formation in etched-circuit boards, in which it is often necessary to reduce the laser pulse energy when the laser beam reaches the bottom of the via being formed.
Additional aspects and advantages of this invention will be apparent from the following detailed description of preferred embodiments, which proceeds with reference to the accompanying drawings.
Thermal loading variations in AOMs, such as prior art AOM 10, can be mitigated by employing pulse picking and laser power control methods shown with reference to
Whenever one of working laser outputs 40 is demanded to impinge on a target such as an electrically conductive link, one of RF pulses 38 is applied to AOM 10 in coincidence with one of laser outputs 24 such that it is transmitted through AOM 10 and becomes the demanded one of working laser outputs 40.
In
The noncoincident RF pulses 38 are preferably offset from the initiations of respective laser outputs 24 by time offsets 44 that are longer than about 0.5 microsecond. Skilled persons will appreciate that while time offsets 44 are shown to follow laser outputs 24, time offsets 44 could alternatively precede laser outputs 24 by a sufficient time to prevent targeting of laser working outputs 40. Thus, RF pulse intervals 43 surrounding one of noncoincident RF pulses 38 may be shorter (such as RF pulse intervals 43b and 43h) than the overall average RF pulse interval 43 (such as 43c, 43d, 43f, 43g, and 43j) or longer (such as RF pulse intervals 43a, 43e, and 43i) than the average RF pulse intervals 43.
With reference again to
Skilled persons will appreciate that even though working laser outputs 40 are preferably first order beam 20 for most applications, such as link processing, working laser outputs 40 may be zero order beam 16 where leakage is tolerable and higher working laser output power is desirable.
In a preferred embodiment, the coincident and noncoincident RF pulses 38 not only employ about the same RF energy, which is the product of an RF power value and an RF duration, but also employ about the same RF power value and about the same RF duration.
RF pulse duration 42′ is preferably selected from about one microsecond to about one-half of laser output interval 41, more preferably shorter than 30 percent of laser output interval 41. For example, if the laser repetition rate is 50 KHz and laser output interval 41 is 20 microseconds, RF pulse duration 42′ can be anywhere between one microsecond and ten microseconds. The minimum RF pulse duration 42 or 42′ is determined by the laser pulse jittering time and the response time of AOM 10. It is preferable to initiate corresponding ones of RF pulses 38 and 38′ surrounding the midpoints of laser outputs 24. Likewise, it is preferable for RF pulses 38 and 38′ to be delayed or offset about half of the minimum RF pulse duration from the initiation of corresponding laser outputs 24.
It will be appreciated that the RF power of RF pulses 38 applied to AOM 10 can be adjusted to control the energy of working laser outputs 40 and 40′ to meet target processing needs, while RF pulse durations 42 and 42′ of RF pulses 38 and 38′ can be controlled accordingly to maintain a substantially constant RF energy or arithmetic product of the RF powers and durations of RF pulses 38 and 38′.
The above-described techniques for employing an AOM in a workpiece processing application address beam steering accuracy and process window requirements, but do not address workpiece processing throughput and efficiency concerns. Employing a single laser for workpiece processing is time-inefficient because significant time and laser power is wasted while moving the laser output and workpiece target location relative to one another. Using a laser beam for an application, such as etched-circuit board via formation, typically results in only 50 percent laser beam utilization time because of the time needed to move the beam between target locations. Beam splitting does not correct this low time utilization problem. Prior workers have employed multiple laser beams to improve processing throughput, but the additional cost and wasted laser power is still a concern.
This invention provides apparatus and methods for improving the throughput and efficiency of a single laser workpiece processing system. In this invention, AOMs employing pulse picking techniques are used in combination with a laser beam switching, or multiplexing, technique to improve workpiece processing and efficiency.
An advantage of laser beam switching system 50 is that first and second workpieces 64 and 66 alternately receive almost the full power of laser pulses 54 for processing. The total time utilization of laser pulses 54 is increased by almost a factor of two, depending on the processing-to-moving time ratio. This greatly increases system throughput without significantly increasing system cost.
When employing beam switching device 70, no shutter or Q-switch is needed if time intervals are required when switching between laser beams 76B and 76C because it is necessary only to shut off the RF signals applied to both first and second AOMs 72 and 74, thereby dumping all of laser beam 76 on beam blocker 78.
Beam switching device 70 is advantageous because constant operation of the laser eliminates thermal drifting of the laser output. Moreover, by operating AOMs 72 and 74 with the pulse picking methods described with reference to
Another advantage of beam switching device 70 is that it can operate as a laser power control device, eliminating a need for a separate laser power controller in a typical laser-based workpiece processing system. Power control is possible because the response times of AOMs 72 and 74 are sufficiently fast for programming laser pulse amplitudes of laser beams 76B and 76C during processing of single target locations in workpieces. A typical laser processing application is blind via formation in etched-circuit boards, in which it is often necessary to reduce the laser pulse energy when the laser beam reaches the bottom of the via being formed.
Beam expander 124 sets the shape of laser beams 76B and 76C in the form of a Gaussian spatial distribution of light energy. Imaged optics assembly 122 shapes the Gaussian spatial distribution of lasers 76B and 76C to form output beams of uniform spatial distribution for delivery to XY scanners 98 and 104. A preferred imaged optics assembly is of a diffractive beam shaper type such as that described in U.S. Pat. No. 5,864,430.
Each of workpiece processing systems 120 and 120′ is advantageous because only one set of expensive beam imaging optics is required. Moreover, for workpiece processing system 120, employing beam switching device 70 permits implementation with smaller optical components because switching is accomplished with a smaller beam width than that which would be found with downstream switching components.
A disadvantage of workpiece processing system 140 is that current practical EOMs are limited in laser pulse repetition rates and are unable to withstand high amounts of ultraviolet laser beam power. Another limitation is that dumping unneeded laser beam energy requires shuttering or turning off laser 92, such as by a Q-switch positioned inside the cavity of laser 92.
On the other hand, workpiece processing system 140 is advantageous because it is simpler than the dual AOM beam switching device 70 described with reference to
FSM 216 may be a two-axis device that could further provide switching of laser beam 214 to more than two positions. For example, laser beam 214 could be directed to a beam blocker during long moves as described with reference to
Laser beam switching system 210 allows implementing a single laser workpiece processing system having the same workpiece processing throughput as a two laser system, provided the move times are over 3 ms and the workpiece processing time and laser beam switching time are less than 1.0 ms.
Laser beam switching system 210 is advantageous because the use of a single laser and associated optics reduces cost by 20 percent to 40 percent, depending on the type of laser required, as compared with a two laser system.
Skilled workers will recognize that portions of this invention may be implemented differently from the implementations described above for preferred embodiments. For example, galvonometer and rotating mirror devices may also be used as laser beam switching devices; IR, visible, and UV lasers may be employed; target locations may be on single or multiple workpieces; laser beam switching may be effected to more than two or three beam paths; multiple lasers may be employed and each of their respective laser outputs switched among multiple paths; AOMs may be switched by single or multiple RF sources; and the scanning heads employed may further include galvanometers, FSMs, and other than XY coordinate positioning techniques.
It will be obvious to skilled workers that many other changes may be made to the details of the above-described embodiments without departing from the underlying principles of the invention. The scope of the present invention should, therefore, be determined only by the following claims.