Claims
- 1. The method of fabricating a zener diode structure comprising the steps of forming an anode region of a first conductivity type material in a semiconductor body, forming a cathode region of a second conductivity type material in said semiconductor body, and forming a third region comprising a shallow layer of ion implanted doping material of said first conductivity type contiguous with both said anode region and said cathode region.
- 2. The method of fabricating a zener diode structure as claimed in claim 1 including the step of controlling the depth and the height of said third region and the amount of doping by controlling the beam of ions used for the ion implantation.
Parent Case Info
This is a division of application Ser. No. 377,610 filed July 19, 1973 now U.S. Pat. No. 4,079,402.
US Referenced Citations (7)
Divisions (1)
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Number |
Date |
Country |
Parent |
377610 |
Jul 1973 |
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