The technology of the disclosure relates generally to a radio frequency (RF) acoustic filter circuit.
Wireless devices have become increasingly common in current society. The prevalence of these wireless devices is driven in part by the many functions that are now enabled on such devices for supporting a variety of wireless communication technologies in a variety of radio frequency (RF) spectrums. In this regard, a wireless device can employ a large number of RF filters to selectively pass and/or reject a selected RF spectrum(s) associated with a selected wireless communication technology.
Acoustic resonators, such as surface acoustic wave (SAW) resonators and bulk acoustic wave (BAW) resonators, are used in many high-frequency communication applications. In particular, SAW resonators are often employed in filter networks that operate frequencies up to 1.8 GHz, and BAW resonators are often employed in filter networks that operate at frequencies above 1.5 GHz. Such filters need to have flat passbands, have steep filter skirts and squared shoulders at the upper and lower ends of the passband, and provide excellent rejection outside of the passband. SAW and BAW-based filters also have relatively low insertion loss, tend to decrease in size as the frequency of operation increases, and are relatively stable over wide temperature ranges.
As such, SAW and BAW-based filters are the filter of choice for many 3rd Generation (3G) and 4th Generation (4G) wireless devices and are destined to dominate filter applications for 5th Generation (5G) wireless devices. Most of these wireless devices support cellular, wireless fidelity (Wi-Fi), Bluetooth, and/or near field communications on the same wireless device and, as such, pose extremely challenging filtering demands. While these demands keep raising the complexity of wireless devices, there is a constant need to improve the performance of acoustic resonators and filters that are based thereon.
Aspects disclosed in the detailed description include a zero-output coupled resonator filter (ZO-CRF) and related radio frequency (RF) filter circuit. As the name suggests, a ZO-CRF differs from a conventional CRF in that the ZO-CRF does not have an output port. In this regard, in examples discussed herein, the ZO-CRF can be configured to function as a shunt resonator(s) in an RF filter circuit (e.g., a ladder filter circuit). The ZO-CRF includes a first resonator and a second resonator that are coupled to each other via a coupling layer. The first resonator and the second resonator receive a first voltage and a second voltage, respectively. The first voltage and the second voltage can be configured in a number of ways to cause the ZO-CRF to resonate at different resonance frequencies. As such, it may be possible to modify resonance frequency of the ZO-CRF in an RF filter circuit based on signal connection. As a result, it may be possible to reduce total inductance of the RF filter circuit, thus helping to reduce footprint of the RF filter circuit.
In one aspect, a ZO-CRF is provided. The ZO-CRF includes a first resonator comprising a first electrode, a second electrode, and a first piezoelectric plate disposed between the first electrode and the second electrode. The first resonator is configured to receive a first voltage between the first electrode and the second electrode. The ZO-CRF also includes a second resonator comprising a third electrode, a fourth electrode, and a second piezoelectric plate disposed between the third electrode and the fourth electrode. The second resonator is configured to receive a second voltage between the fourth electrode and the third electrode. The ZO-CRF also includes a coupling layer disposed between the second electrode and the third electrode. The first voltage and the second voltage are configured to cause the ZO-CRF to resonate at a selected resonance frequency.
In another aspect, an RF filter circuit is provided. The RF filter circuit includes an input port configured to receive an RF signal. The RF filter circuit also includes an output port configured to output the RF signal. The RF filter circuit also includes a series resonator coupled between the input port and the output port and configured to resonate at a defined resonance frequency to pass the RF signal from the input port to the output port. The RF filter circuit also includes a ZO-CRF coupled between the series resonator and a ground. The ZO-CRF includes a first resonator comprising a first electrode, a second electrode, and a first piezoelectric plate disposed between the first electrode and the second electrode. The first resonator is configured to receive a first voltage between the first electrode and the second electrode. The ZO-CRF also includes a second resonator comprising a third electrode, a fourth electrode, and a second piezoelectric plate disposed between the third electrode and the fourth electrode. The second resonator is configured to receive a second voltage between the fourth electrode and the third electrode. The ZO-CRF also includes a coupling layer disposed between the second electrode and the third electrode. The first voltage and the second voltage are configured to cause the ZO-CRF to resonate at a selected resonance frequency to shunt the RF signal to the ground.
Those skilled in the art will appreciate the scope of the disclosure and realize additional aspects thereof after reading the following detailed description in association with the accompanying drawings.
The accompanying drawings incorporated in and forming a part of this specification illustrate several aspects of the disclosure and, together with the description, serve to explain the principles of the disclosure.
The embodiments set forth below represent the necessary information to enable those skilled in the art to practice the embodiments and illustrate the best mode of practicing the embodiments. Upon reading the following description in light of the accompanying drawing figures, those skilled in the art will understand the concepts of the disclosure and will recognize applications of these concepts not particularly addressed herein. It should be understood that these concepts and applications fall within the scope of the disclosure and the accompanying claims.
It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present disclosure. As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items.
It will be understood that when an element such as a layer, region, or substrate is referred to as being “on” or extending “onto” another element, it can be directly on or extend directly onto the other element or intervening elements may also be present. In contrast, when an element is referred to as being “directly on” or extending “directly onto” another element, there are no intervening elements present. Likewise, it will be understood that when an element such as a layer, region, or substrate is referred to as being “over” or extending “over” another element, it can be directly over or extend directly over the other element or intervening elements may also be present. In contrast, when an element is referred to as being “directly over” or extending “directly over” another element, there are no intervening elements present. It will also be understood that when an element is referred to as being “connected” or “coupled” to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being “directly connected” or “directly coupled” to another element, there are no intervening elements present.
Relative terms such as “below” or “above” or “upper” or “lower” or “horizontal” or “vertical” may be used herein to describe a relationship of one element, layer, or region to another element, layer, or region as illustrated in the Figures. It will be understood that these terms and those discussed above are intended to encompass different orientations of the device in addition to the orientation depicted in the Figures.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. As used herein, the singular forms “a,” “an,” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “comprises,” “comprising,” “includes,” and/or “including” when used herein specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It will be further understood that terms used herein should be interpreted as having a meaning that is consistent with their meaning in the context of this specification and the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
Aspects disclosed in the detailed description include a zero-output coupled resonator filter (ZO-CRF) and related radio frequency (RF) filter circuit. As the name suggests, a ZO-CRF differs from a conventional CRF in that the ZO-CRF does not have an output port. In this regard, in examples discussed herein, the ZO-CRF can be configured to function as a shunt resonator(s) in an RF filter circuit (e.g., a ladder filter circuit). The ZO-CRF includes a first resonator and a second resonator that are coupled to each other via a coupling layer. The first resonator and the second resonator receive a first voltage and a second voltage, respectively. The first voltage and the second voltage can be configured in a number of ways to cause the ZO-CRF to resonate at different resonance frequencies. As such, it may be possible to modify resonance frequency of the ZO-CRF in an RF filter circuit based on signal connection. As a result, it may be possible to reduce total inductance of the RF filter circuit, thus helping to reduce footprint of the RF filter circuit.
Before discussing a ZO-CRF and a related RF filter circuit incorporating the ZO-CRF of the present disclosure, a brief discussion of a bulk acoustic wave (BAW) resonator is first provided with reference to
In this regard,
When a voltage VIN is applied between the input port 22 and the output port 24, an acoustic wave 26 is excited and resonates at a resonance frequency fC between the top surface 16 and the bottom surface 20 of the piezoelectric layer 12. The resonance frequency fC may be determined by a thickness of the piezoelectric layer 12 as well as a mass of the top metal electrode 14 and the bottom metal electrode 18.
The BAW resonator 10 may be configured to expand the piezoelectric layer 12 when a positive voltage VIN is applied between the input port 22 and the output port 24 and compress the piezoelectric layer 12 when a negative voltage VIN is applied between the input port 22 and the output port 24. As such, the BAW resonator 10 in which the piezoelectric layer 12 expands and compresses respectively in response to the positive voltage VIN and the negative voltage VIN is also known as a polarized BAW resonator.
Alternatively, the BAW resonator 10 may be configured to compress the piezoelectric layer 12 when the positive voltage VIN is applied between the input port 22 and the output port 24 and expand the piezoelectric layer 12 when the negative voltage VIN is applied between input port 22 and the output port 24. As such, the BAW resonator 10 in which the piezoelectric layer 12 compresses and expands respectively in response to the positive voltage VIN and the negative voltage VIN is also known as a polarized inverted BAW resonator.
The first resonator 30 includes a first top electrode 36T, a first bottom electrode 36B, and a first piezoelectric plate 38 provided in between the first top electrode 36T and the first bottom electrode 36B. The second resonator 32 includes a second top electrode 40T, a second bottom electrode 40B, and a second piezoelectric plate 42 provided in between the second top electrode 40T and the second bottom electrode 40B. The coupling layer 34 is provided between the first bottom electrode 36B and the second top electrode 40T. Both the first bottom electrode 36B and the second top electrode 40T are coupled to a ground (GND).
The first top electrode 36T is coupled to an input port 44 and the second bottom electrode 40B is coupled to an output port 46. The conventional CRF 28 may be configured to pass an RF signal 48 within a defined resonance frequency bandwidth, while rejecting an unwanted signal(s) outside the defined resonance frequency bandwidth (not shown). In this regard, the conventional CRF 28 can be referred to as a single-input, single-output (SISO) CRF.
The conventional CRF 28 may be modeled by a CRF equivalent electrical model. In this regard,
In the CRF equivalent circuit 50, each of the first resonator 30 and the second resonator 32 is an inductor-capacitor (LC) circuit that includes an inductor Lm, a capacitor Cm coupled in series with the inductor Lm, and a second capacitor C0 coupled to the GND. In addition, the coupling layer 34 is modeled by an impedance inverter Ka.
In a non-limiting example, the equivalent inductor network 52 includes a first inductor 54 and a second inductor 56 coupled in series between the input port 44 and the output port 46. The equivalent inductor network 52 also includes a third inductor 58 coupled in between a coupling node 60 and the GND.
When a load impedance Z is connected between the output port 46 and the GND, a source impedance Z1 as seen between the input port 44 and the GND would be equal to Ka2/Z. Accordingly, a relationship between a first voltage V1, a first current I1, a second voltage V2, and a second current I2 can be expressed in equation (Eq. 1) below.
In the equation (Eq. 1) above, w represents a pulsation of the coupling layer 34 and L represents a respective inductance of the first inductor 54, the second inductor 56, and the third inductor 58. Accordingly, the impedance inverter Ka can be determined based on equation (Eq. 2) below.
V1=+j*w*L*I2
V2=+j*w*L*I1=−Z*I2
V1/I1=Zinv=+(L*w)/Z
Ka=L*w (Eq. 2)
The equivalent inductor network 52 can be used to model the impedance inverter Ka in the CRF equivalent circuit 50 of
It may be assumed that the second capacitor C0 in the CRF equivalent circuit 50 is small or can be considered as part of the source impedance Z1 and/or the load impedance Z. As such, it may be possible to eliminate the second capacitor C0 from the CRF equivalent electrical circuit 62 to help simplify the analysis.
A number of equations can be developed based on the CRF equivalent electrical circuit 62 in conjunction with equations (Eq. 1 and Eq. 2).
V1=j*(Lm−L)*w*I1−j/(Cm*w)*I1+j*L*w*(I1+I2)
V3=j*(Lm−L)*w*I3−j/(Cm*w)*I2+j*L*w*(I1+I2)
V2=[j*Lm*w−j/(Cm*w)]*I2+j*L*w*I1
I2=(V2−j*L*w*I1)/(j*Lm*w−j/(Cm*w))
V1=(j*Lm*w−j/(Cm*w))*I1+j*L*w/(j*Lm*w−j/(Cm*w))*(V2−j*L*w*I1)
V1=I1*[j*Lm*w−j/(Cm*w)+L2*w2/(j*Lm*w−j/(Cm*w))]+V2*j*L*w/(j*Lm*w−j/(Cm*w))
I1=[V1−V2*j*L*w/(j*Lm*w−j/(Cm*w))]/[j*Lm*w−j/(Cm*w)+L2*w2/(j*Lm*w−j/(Cm*w))]
I1=(j*Lm*w−j/(Cm*w))*[V1−V2*j*L*w/(j*Lm*w−j/(Cm*w))]/[L2*w2−(Lm*w−1/(Cm*w))2]
Accordingly, the first current I1 and the second current I2 can be expressed in equation (Eq. 3.1) and equation (Eq. 3.2), respectively.
I1=j*[(Lm*w−1/(Cm*w))*V1−L*w*V2]/[L2*w2−(Lm*w−1/(Cm*w))2] (Eq. 3.1)
I2=j*[(Lm*w−1/(Cm*w))*V2−L*w*V1]/[L2*w2−(Lm*w−1/(Cm*w))2] (Eq. 3.2)
By assuming that V2=(1−α)*V1, wherein α represents a tuning factor, and replacing V2 accordingly in the equation (Eq. 3.1), the following equations can be created.
I1=j*[Lm*w−1/(Cm*w)−(1−α)*L*w]/[L2*w2−(Lm*w−1/(Cm*w))2]*V1
I1=j*[Lm*w−1/(Cm*w)−L*w]/[L2*w2−(Lm*w−1/(Cm*w))2]*V1+j*α*L*w/[L2*w2−(Lm*w−1/(Cm*w))2]*V1
I1=−j*V1/[(Lm+L)*w−1/(Cm*w)]+j*α*L*w/[L2*w2−(Lm*w−1/(Cm*w))2]*V1
I1=−j*V1/[(Lm+L)*w−1/(Cm*w)]+j*α*L*w/[(L*w−Lm*w+1/(Cm*w))*(L*w+Lm*w−1/(Cm*w))]*V1
I1=−j*V1/[(Lm+L)*w−1/(Cm*w)]−j*α*L*w*V1/[((Lm+L)*w−1/(Cm*w))*((Lm−L)*w−1/(Cm*w))]
I1=−j*V1/[(Lm+L)*w−1/(Cm*w)]*[1+α*L*w/((Lm−L)*w−1/(Cm*w))]
Accordingly, the source impedance Z1, which equals V1/I1, can be expressed in equations (Eq. 4.1 and Eq. 4.2) on the next page.
Z1=j*[(Lm+L)*w−1/(Cm*w)]/[1+α*L*w/((Lm−L)*w−1/(Cm*w))] (Eq. 4.1)
Z1=j*[(Lm+L)*w−1/(Cm*w)]*[(Lm−L)*w−1/(Cm*w)]/[(Lm−(1−α)*L)*w−1/(Cm*w)] (Eq. 4.2)
Similarly, the load impedance Z, which equals V2/I2, can be expressed in equations (Eq. 4.3 and Eq. 4.4) below.
Z=j*[(Lm+L)*w−1/(Cm*w)]*(1−α)/[1−α*(Lm*w−1/(Cm*w))/((Lm−L)*w−1/(Cm*w))] (Eq. 4.3)
Z=j*[(Lm+L)*w−1/(Cm*w)]*[(Lm−L)*w−1/(Cm*w)]/[(Lm−L/(1−α))*w−1/(Cm*w)] (Eq. 4.4)
Some observations can be made from the equations above. First, the source impedance Z1 and/or the load impedance Z can be configured to resonate at a selected resonance frequency based on the first voltage V1 and the second voltage V2. Second, the second voltage V2 can be related to the first voltage V1 by the tuning factor α. As discussed in detail below, it may be possible to configure a CRF to resonate at a selected resonance frequency by controlling the first voltage V1 and the second voltage V2.
In this regard,
The ZO-CRF 64 includes a first resonator 70 and a second resonator 72 that are coupled to each other by a coupling layer 74. The first resonator 70 includes a first electrode 76, a second electrode 78, and a first piezoelectric plate 80 sandwiched between the first electrode 76 and the second electrode 78. The second resonator 72 includes a third electrode 82, a fourth electrode 84, and a second piezoelectric plate 86 sandwiched between the third electrode 82 and the fourth electrode 84. The coupling layer 74 is provided between the second electrode 78 and the third electrode 82. In one non-limiting example, the first resonator 70 and the second resonator 72 can be configured to resonate in an identical resonance frequency. In this regard, the first piezoelectric plate 80 and the second piezoelectric plate 86 may have identical thickness. In another non-limiting example, the first resonator 70 and the second resonator 72 can be configured to resonate in different resonance frequencies. In this regard, the first piezoelectric plate 80 and the second piezoelectric plate 86 may have different thicknesses.
In a non-limiting example, the first electrode 76 and the fourth electrode 84 are coupled to the input port 68, which is configured to receive an input voltage VIN. In the same non-limiting example, the second electrode 78 and the third electrode 82 are coupled to the GND. Accordingly, the first resonator 70 is configured to receive a first voltage V1 between the first electrode 76 and the second electrode 78, and the second resonator 72 is configured to receive a second voltage V2 between the fourth electrode 84 and the third electrode 82.
A tuning element 88 may be used to generate the first voltage V1 and the second voltage V2 based on the input voltage VIN. In a non-limiting example, the tuning element 88 can include a first tuner 90 corresponding to a first tuning factor α1 and a second tuner 92 corresponding to a second tuning factor α2. Notably, the first tuning factor α1 and the second tuning factor α2 can be any finite number. In examples discussed herein, each of the first tuning factor α1 and the second tuning factor α2 can be any of the integers 0, 1, or 2. Accordingly, the first voltage V1 and the second voltage V2 are equal to (1−α1)*VIN and (1−α2)*VIN, respectively. In this regard, the second voltage V2 can be determined based on the first voltage V1 as follows.
V2=(1−α)*V1, wherein α=(α2−α1)/(1−α1)
As discussed in
Z1=j*[(Lm+L)*w−1/(Cm*w)] (Eq. 5.1)
Z=j*[(Lm+L)*w−1/(Cm*w)] (Eq. 5.2)
Accordingly, the source impedance Z1 and the load impedance Z each has a single series resonance frequency at 1/((Lm+L)*Cm).
Z1=j*[(Lm+L)*w−1/(Cm*w)]*[(Lm−L)*w−1/(Cm*w)]/[Lm*w−1/(Cm*w)] (Eq. 6)
Accordingly, the source impedance Z1 has a lower series resonance frequency at 1/((Lm+L)*Cm) and an upper series resonance frequency at 1/((Lm−L)*Cm). In addition, the source impedance Z1 also has a parallel resonance frequency at 1/(Lm*Cm).
Z=j*[(Lm+L)*w−1/(Cm*w)]*[(Lm−L)*w−1/(Cm*w)]/[Lm*w−1/(Cm*w)] (Eq. 7)
Accordingly, the load impedance Z has a lower series resonance frequency at 1/((Lm+L)*Cm) and an upper series resonance frequency at 1/((Lm-L)*Cm). In addition, the load impedance Z also has a parallel resonance frequency at 1/(Lm*Cm).
Z1=j*[(Lm−L)*w−1/(Cm*w)] (Eq. 8.1)
Z=j*[(Lm−L)*w−1/(Cm*w)] (Eq. 8.2)
Accordingly, the source impedance Z1 and the load impedance Z each has a single series resonance frequency at 1/((Lm−L)*Cm).
Z1=Z1=j*[(Lm−L)*w−1/(Cm*w)] (Eq. 9)
Accordingly, the source impedance Z1 has a single series resonance frequency at 1/((Lm−L)*Cm).
The ZO-CRF 64 of
The RF filter circuit 94 includes an input port 96 and an output port 98 configured to receive and output an RF signal 100, respectively. The RF filter circuit 94 includes a series resonator 102 coupled between the input port 96 and the output port 98. The series resonator 102 is configured to resonate at a defined resonance frequency to pass the RF signal 100 from the input port 96 to the output port 98.
The RF filter circuit 94 includes a ZO-CRF 64X, which can be any of the ZO-CRF 64 of
The ladder RF filter circuit 104 includes at least one second ZO-CRF 64Y, which can be any of the ZO-CRF 64 of
It should be appreciated that the ladder RF filter circuit 104 can be configured to include additional series resonators that are coupled in series with the series resonator 102 and the second series resonator 106 between the input port 96 and the output port 98. Accordingly, the ladder RF filter circuit 104 can be configured to include additional ZO-CRFs provided in parallel to the ZO-CRF 64X and the second ZO-CRF 64Y.
Notably, the ZO-CRF 64X and the second ZO-CRF 64Y can be provided in the ladder RF filter circuit 104 based on an identical configuration. For example, the ZO-CRF 64X and the second ZO-CRF 64Y can be configured according to the ZO-CRF 64A of
In this regard,
Those skilled in the art will recognize improvements and modifications to the embodiments of the present disclosure. All such improvements and modifications are considered within the scope of the concepts disclosed herein and the claims that follow.
This application is a continuation-in-part of U.S. patent application Ser. No. 15/883,933, filed on Jan. 30, 2018 and published as U.S. Patent Application Publication No. 2018/0219530, which claims the benefit of U.S. provisional patent application Ser. No. 62/451,915, filed on Jan. 30, 2017, the disclosures of which are incorporated herein by reference in their entireties.
Number | Name | Date | Kind |
---|---|---|---|
3731230 | Cerny, Jr. | May 1973 | A |
3875533 | Irwin et al. | Apr 1975 | A |
4442434 | Baekgaard | Apr 1984 | A |
4577168 | Hartmann | Mar 1986 | A |
5291159 | Vale | Mar 1994 | A |
6067391 | Land | May 2000 | A |
6670866 | Ellaet et al. | Dec 2003 | B2 |
6714099 | Hikita et al. | Mar 2004 | B2 |
6720844 | Lakin | Apr 2004 | B1 |
6927649 | Metzger et al. | Aug 2005 | B2 |
6927651 | Larson, III et al. | Aug 2005 | B2 |
6975183 | Aigner et al. | Dec 2005 | B2 |
7057478 | Korden et al. | Jun 2006 | B2 |
7173504 | Larson, III et al. | Feb 2007 | B2 |
7239067 | Komuro et al. | Jul 2007 | B2 |
7321183 | Ebuchi et al. | Jan 2008 | B2 |
7342351 | Kubo et al. | Mar 2008 | B2 |
7367095 | Larson, III et al. | May 2008 | B2 |
7391285 | Larson, III et al. | Jun 2008 | B2 |
7436269 | Wang et al. | Oct 2008 | B2 |
7515018 | Handtmann et al. | Apr 2009 | B2 |
7804374 | Brown et al. | Sep 2010 | B1 |
7825749 | Thalhammer et al. | Nov 2010 | B2 |
7855618 | Frank et al. | Dec 2010 | B2 |
7889024 | Bradley et al. | Feb 2011 | B2 |
7898493 | Rojas et al. | Mar 2011 | B1 |
7956705 | Meister et al. | Jun 2011 | B2 |
7973620 | Shirakawa et al. | Jul 2011 | B2 |
8248185 | Choy et al. | Aug 2012 | B2 |
8508315 | Jamneala et al. | Aug 2013 | B2 |
8575820 | Shirakawa et al. | Nov 2013 | B2 |
8576024 | Erb et al. | Nov 2013 | B2 |
8923794 | Aigner | Dec 2014 | B2 |
8981627 | Sakuma et al. | Mar 2015 | B2 |
8991022 | Satoh et al. | Mar 2015 | B2 |
9054671 | Adkisson et al. | Jun 2015 | B2 |
9054674 | Inoue et al. | Jun 2015 | B2 |
9197189 | Miyake | Nov 2015 | B2 |
9243316 | Larson, III et al. | Jan 2016 | B2 |
9484883 | Nishizawa et al. | Nov 2016 | B2 |
9698756 | Khlat et al. | Jul 2017 | B2 |
9837984 | Khlat et al. | Dec 2017 | B2 |
9847769 | Khlat et al. | Dec 2017 | B2 |
9887686 | Kuwahara | Feb 2018 | B2 |
9929716 | Lee et al. | Mar 2018 | B2 |
10009001 | Jiang et al. | Jun 2018 | B2 |
10141644 | Khlat et al. | Nov 2018 | B2 |
20020109564 | Tsai et al. | Aug 2002 | A1 |
20040100342 | Nishihara et al. | May 2004 | A1 |
20050057117 | Nakatsuka et al. | Mar 2005 | A1 |
20050093648 | Inoue | May 2005 | A1 |
20050206476 | Ella et al. | Sep 2005 | A1 |
20060091978 | Wang et al. | May 2006 | A1 |
20080007369 | Barber et al. | Jan 2008 | A1 |
20080169884 | Matsumoto | Jul 2008 | A1 |
20080297278 | Handtmann et al. | Dec 2008 | A1 |
20090096549 | Thalhammer et al. | Apr 2009 | A1 |
20090096550 | Handtmann et al. | Apr 2009 | A1 |
20100277237 | Sinha et al. | Nov 2010 | A1 |
20110115334 | Konishi et al. | May 2011 | A1 |
20110121689 | Grannen et al. | May 2011 | A1 |
20110204995 | Jamneala et al. | Aug 2011 | A1 |
20110210787 | Lee et al. | Sep 2011 | A1 |
20120007696 | Pang et al. | Jan 2012 | A1 |
20120187799 | Nakahashi | Jul 2012 | A1 |
20120313725 | Ueda et al. | Dec 2012 | A1 |
20130033150 | Bardong et al. | Feb 2013 | A1 |
20130113576 | Inoue et al. | May 2013 | A1 |
20130193808 | Feng et al. | Aug 2013 | A1 |
20140132117 | Larson, III | May 2014 | A1 |
20140145557 | Tanaka | May 2014 | A1 |
20140167565 | Iwamoto | Jun 2014 | A1 |
20150222246 | Nosaka | Aug 2015 | A1 |
20150280100 | Burak et al. | Oct 2015 | A1 |
20150369153 | Tsunooka et al. | Dec 2015 | A1 |
20160028364 | Takeuchi | Jan 2016 | A1 |
20160056789 | Otsubo et al. | Feb 2016 | A1 |
20160191012 | Khlat et al. | Jun 2016 | A1 |
20160191014 | Khlat et al. | Jun 2016 | A1 |
20160191016 | Khlat et al. | Jun 2016 | A1 |
20160261235 | Ortiz | Sep 2016 | A1 |
20160268998 | Xu et al. | Sep 2016 | A1 |
20160308576 | Khlat et al. | Oct 2016 | A1 |
20160359468 | Taniguchi et al. | Dec 2016 | A1 |
20170093369 | Khlat et al. | Mar 2017 | A1 |
20170093370 | Khlat et al. | Mar 2017 | A1 |
20170141757 | Schmidhammer | May 2017 | A1 |
20170201233 | Khlat | Jul 2017 | A1 |
20170301992 | Khlat et al. | Oct 2017 | A1 |
20170324159 | Khlat | Nov 2017 | A1 |
20170338795 | Nakagawa et al. | Nov 2017 | A1 |
20180013402 | Kirkpatrick et al. | Jan 2018 | A1 |
20180041191 | Park | Feb 2018 | A1 |
20180076793 | Khlat et al. | Mar 2018 | A1 |
20180076794 | Khlat et al. | Mar 2018 | A1 |
20180109236 | Konoma | Apr 2018 | A1 |
20180109237 | Wasilik et al. | Apr 2018 | A1 |
20180145658 | Saji | May 2018 | A1 |
20180219530 | Khlat et al. | Aug 2018 | A1 |
20180241418 | Takamine et al. | Aug 2018 | A1 |
20180358947 | Mateu et al. | Dec 2018 | A1 |
20190140618 | Takamine | May 2019 | A1 |
20190181835 | Timme | Jun 2019 | A1 |
20190199320 | Morita et al. | Jun 2019 | A1 |
20190207583 | Miura et al. | Jul 2019 | A1 |
20190288664 | Saji | Sep 2019 | A1 |
20190305752 | Sadhu et al. | Oct 2019 | A1 |
Number | Date | Country |
---|---|---|
2012257050 | Dec 2012 | JP |
Entry |
---|
Ibrahim, A. et al., “Compact Size Microstrip Coupled Resonator Band Pass Filter Loaded with Lumped Capacitors,” 2013 Second International Japan-Egypt Conference on Electronics, Communications and Computers (JEC-ECC), Dec. 17-19, 2013, Egypt, IEEE, 4 pages. |
Tsai, H. et al., “Tunable Filter by FBAR Using Coupling Capacitors,” Proceedings of the 2018 Asia-Pacific Microwave Conference (APMC), Nov. 6-9, 2018, Kyoto, Japan, IEICE, pp. 609-611. |
Zhu, L. et al., “Adjustable Bandwidth Filter Design Based on Interdigital Capacitors,” IEEE Microwave and Wireless Components Letters, vol. 18, No. 1, Jan. 2008, IEEE, pp. 16-18. |
Notice of Allowance and Examiner-Initiated Interview Summary for U.S. Appl. No. 16/003,417, dated Aug. 5, 2020, 9 pages. |
Final Office Action for U.S. Appl. No. 16/290,175, dated Sep. 17, 2020, 13 pages. |
Final Office Action for U.S. Appl. No. 15/883,933, dated Oct. 23, 2020, 15 pages. |
Non-Final Office Action for U.S. Appl. No. 14/757,587, dated Sep. 13, 2016, 12 pages. |
Notice of Allowance for U.S. Appl. No. 14/757,587, dated Mar. 9, 2017, 8 pages. |
Non-Final Office Action for U.S. Appl. No. 15/004,084, dated Jun. 12, 2017, 9 pages. |
Non-Final Office Action for U.S. Appl. No. 14/757,651, dated Jun. 9, 2017, 11 pages. |
Non-Final Office Action for U.S. Appl. No. 15/275,957, dated Jun. 14, 2017, 9 pages. |
Ex Parte Quayle Action for U.S. Appl. No. 15/347,452, mailed Jun. 15, 2017, 7 pages. |
Final Office Action for U.S. Appl. No. 15/275,957, dated Jan. 2, 2018, 7 pages. |
Author Unknown, “SAW Filters—SAW Resonators: Surface Acoustic Wave SAW Components,” Product Specification, 2010, Token Electronics Industry Co., Ltd., 37 pages. |
Fattinger, Gernot et al., “Miniaturization of BAW Devices and the Impact of Wafer Level Packaging Technology,” Joint UFFC, EFTF and PFM Symposium, Jul. 21-25, 2013, Prague, Czech Republic, IEEE, pp. 228-231. |
Kwa, Tom, “Wafer-Level Packaged Accelerometer With Solderable SMT Terminals,” IEEE Sensors, Oct. 22-25, 2006, Daegu, South Korea, IEEE, pp. 1361-1364. |
Lakin, K. M., “Coupled Resonator Filters,” 2002 IEEE Ultrasonics Symposium, Oct. 8-11, 2002, Munich, Germany, 8 pages. |
Ló, Edén Corrales, “Analysis and Design of Bulk Acoustic Wave Filters Based on Acoustically Coupled Resonators,” PhD Thesis, Department of Telecommunications and Systems Engineering, Autonomous University of Barcelona, May 2011, 202 pages. |
Potter, Bob R. et al., “Embedded Inductors Incorporated in the Design of SAW Module SMT Packaging,” Proceedings of the 2002 Ultrasonics Symposium, Oct. 8-11, 2002, IEEE, pp. 397-400. |
Schneider, Robert, “High-Q AIN Contour Mode Resonators with Unattached, Voltage-Actuated Electrodes,” Thesis, Technical Report No. UCB/EECS-2015-247, Dec. 17, 2015, Electrical Engineering and Computer Sciences, University of California at Berkeley, http://www.eecs.berkeley.edu/Pubs/TechRpts/2015/EECS-2015-247.html, Robert Anthony Schneider, 222 pages. |
Shirakawa, A. A., et al., “Bulk Acoustic Wave-Coupled Resonator Filters: Concept, Design, and Application,” International Journal of RF and Microwave Computer-Aided Engineering, vol. 21, No. 5, Sep. 2011, 9 pages. |
Corrales, Eden, et al., “Design of Three-Pole Bulk Acoustic Wave Coupled Resonator Filters,” 38th European Microwave Conference, Oct. 2008, Amsterdam, Netherlands, EuMA, pp. 357-360. |
De Paco, Pedro, et al., “Equivalent Circuit Modeling of Coupled Resonator Filters,” Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, vol. 55, Issue 9, Sep. 2008, IEEE, pp. 2030-2037. |
Lakin, K. M., “Bulk Acoustic Wave Coupled Resonator Filters,” International Frequency Control Symposium, 2002, IEEE, pp. 8-14. |
Shirakawa, A. A., et al., “Bulk Acoustic Wave Coupled Resonator Filters Synthesis Methodology,” European Microwave Conference, Oct. 4-6, 2005, Paris, France, IEEE, 4 pages. |
Tosic, Dejan, et al., “Symbolic analysis of immitance inverters,” 14th Telecommunications Forum, Nov. 21-23, 2006, Belgrade, Serbia, pp. 584-487. |
Non-Final Office Action for U.S. Appl. No. 14/757,651, dated May 8, 2018, 8 pages. |
Notice of Allowance for U.S. Appl. No. 15/347,428, dated Jul. 12, 2018, 9 pages. |
Notice of Allowance for U.S. Appl. No. 15/490,381, dated May 23, 2018, 8 pages. |
Final Office Action for U.S. Appl. No. 14/757,651, dated Sep. 19, 2018, 7 pages. |
Non-Final Office Action for U.S. Appl. No. 15/701,759, dated Oct. 4, 2018, 10 pages. |
Notice of Allowance for U.S. Appl. No. 15/727,117, dated Mar. 13, 2019, 9 pages. |
Non-Final Office Action for U.S. Appl. No. 15/586,374, dated Feb. 26, 2019, 16 pages. |
Notice of Allowance for U.S. Appl. No. 15/720,706, dated Mar. 15, 2019, 9 pages. |
Non-Final Office Action for U.S. Appl. No. 15/697,658, dated May 1, 2019, 13 pages. |
Larson, John, et al., “Characterization of Reversed c-axis AIN Thin Films,” International Ultrasonics Symposium Proceedings, 2010, IEEE, pp. 1054-1059. |
Notice of Allowance for U.S. Appl. No. 15/586,374, dated Oct. 4, 2019, 7 pages. |
Notice of Allowance for U.S. Appl. No. 15/644,922, dated Oct. 21, 2019, 10 pages. |
Non-Final Office Action for U.S. Appl. No. 15/883,933, dated Oct. 25, 2019, 19 pages. |
Final Office Action for U.S. Appl. No. 15/697,658, dated Oct. 22, 2019, 9 pages. |
Capilla, Jose et al., “High-Acoustic-Impedence Tantalum Oxide Layers for Insulating Acoustic Reflectors,” IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, vol. 59, No. 3, Mar. 2012, IEEE, pp. 366-372. |
Fattinger, Gernot et al., ““Single-to-balanced Filters for Mobile Phones using Coupled Resonator BAW Technology,”” 2004 IEEE International Ultrasonics, Ferroelectrics,and Frequency Control Joint 50th Anniversary Conference, Aug. 23-27, 2004, IEEE, pp. 416-419. |
Lakin, K. M. et al., “High Performance Stacked Crystal Filters for GPS and Wide Bandwidth Applications,” 2001 IEEE Ultrasonics Symposium, Oct. 7-10, 2001, IEEE, pp. 833-838. |
Roy, Ambarish et al., “Spurious Modes Suppression in Stacked Crystal Filter,” 2010 IEEE Long Island Systems, Applications and Technology Conference, May 7, 2010, 6 pages. |
Non-Final Office Action for U.S. Appl. No. 16/003,417, dated Apr. 3, 2020, 9 pages. |
Non-Final Office Action for U.S. Appl. No. 16/290,175, dated Apr. 14, 2020, 29 pages. |
Non-Final Office Action for U.S. Appl. No. 16/283,044, dated Nov. 12, 2020, 9 pages. |
Notice of Allowance for U.S. Appl. No. 15/697,658, dated Nov. 17, 2020, 7 pages. |
Advisory Action for U.S. Appl. No. 15/883,933, dated Dec. 31, 2020, 3 pages. |
Non-Final Office Action for U.S. Appl. No. 16/290,175, dated Jan. 6, 2021, 14 pages. |
Non-Final Office Action for U.S. Appl. No. 15/883,933, dated Mar. 29, 2021, 11 pages. |
Non-Final Office Action for U.S. Appl. No. 16/740,667, dated Mar. 4, 2021, 10 pages. |
Non-Final Office Action for U.S. Appl. No. 16/776,738, dated Mar. 4, 2021, 7 pages. |
Non-Final Office Action for U.S. Appl. No. 16/806,166, dated Mar. 18, 2021, 6 pages. |
Notice of Allowance for U.S. Appl. No. 16/290,175, dated Jun. 14, 2021, 7 pages. |
Corrected Notice of Allowability for U.S. Appl. No. 16/290,175, dated Jun. 23, 2021,4 pages. |
Notice of Allowance for U.S. Appl. No. 16/740,667, dated Jun. 11, 2021, 7 pages. |
Notice of Allowance for U.S. Appl. No. 16/776,738, dated Jun. 11, 2021, 7 pages. |
Notice of Allowance for U.S. Appl. No. 16/806,166, dated Jun. 18, 2021, 7 pages. |
Number | Date | Country | |
---|---|---|---|
20190222197 A1 | Jul 2019 | US |
Number | Date | Country | |
---|---|---|---|
62451915 | Jan 2017 | US |
Number | Date | Country | |
---|---|---|---|
Parent | 15883933 | Jan 2018 | US |
Child | 16358823 | US |