Claims
- 1. A silicon nitride sintered member, consisting essentially of:
- a silicon nitride sintered body; and
- a heat insulating layer formed on a surface of said silicon nitride sintered body, said layer consisting essentially of zirconia and having a thickness of not greater than 100 microns;
- wherein said heat insulating layer reduces the thermal conductivity of said silicon nitride sintered member.
- 2. The silicon nitride sintered member according to claim 1, wherein said thickness is not greater than 70 microns.
- 3. The silicon nitride sintered member according to claim 1, further comprising an intermediate layer formed between said silicon nitride sintered body and said heat insulating layer, wherein said intermediate layer has a thermal expansion coefficient between that of the silicon nitride sintered body and that of the heat insulating layer.
- 4. The silicon nitride sintered member according to claim 1, wherein said silicon nitride sintered body further comprises additives selected from the group consisting of MgO, Al.sub.2 O.sub.3, Y.sub.2 O.sub.3, SrO, CeO.sub.2 and ZrO.sub.2.
- 5. The silicon nitride sintered member according to claim 1, wherein said zirconia is stabilized with at least one additive selected from the group consisting of Y.sub.2 O.sub.3, MgO and CaO.
- 6. The silicon nitride sintered member according to claim 1, wherein said zirconia is partially stabilized with at least one additive selected from the group consisting of Y.sub.2 O.sub.3, MgO and CaO.
- 7. The silicon nitride sintered member according to claim 1, further comprising a thermal conductivity of not greater than 0.04 Bcal/cm.sec..degree.C.
- 8. A silicon nitride sintered member, consisting essentially of:
- a silicon nitride sintered body; and
- a heat insulating layer formed on a roughened or activated surface of said silicon nitride body by plasma spraying, said layer consisting essentially of zirconia and having a thickness of not greater than 100 microns;
- wherein said heat insulating layer is rigidly adhered to said body, such that said layer reduces the thermal conductivity of said silicon nitride sintered member.
- 9. The silicon nitride sintered member according to claim 8, wherein said thickness is not greater than 70 microns.
- 10. The silicon nitride sintered member of claim 8, further comprising an intermediate layer formed between said silicon nitride sintered body and said heat insulating layer, wherein said intermediate layer has a thermal expansion coefficient between that of the silicon nitride sintered body and that of the heat insulating layer.
- 11. The silicon nitride sintered member according to claim 8, wherein said silicon nitride sintered body further comprises additives selected from the group consisting of MgO, Al.sub.2 O.sub.3, Y.sub.2 O.sub.3, SrO, CeO.sub.2 and ZrO.sub.2.
- 12. The silicon nitride sintered member according to claim 8, wherein said zirconia is stabilized with at least one additive selected from the group consisting of Yhd 2O.sub.3, MgO and CaO.
- 13. The silicon nitride sintered member according to claim 8, wherein said zirconia is partially stabilized with at least one additive selective from the group consisting of Y.sub.2 O.sub.3, MgO and CaO.
- 14. The silicon nitride sintered member according to claim 8, further comprising a thermal conductivity of not greater than 0.04 cal/cm.sec..degree.C.
Priority Claims (2)
Number |
Date |
Country |
Kind |
60-169792 |
Aug 1985 |
JPX |
|
60-213493 |
Sep 1985 |
JPX |
|
Parent Case Info
This is a continuation of application Ser. No. 887,654, filed July 21, 1986, now abandoned.
US Referenced Citations (15)
Foreign Referenced Citations (5)
Number |
Date |
Country |
1058422 |
Nov 1957 |
DEX |
57515178 |
Jun 1977 |
JPX |
56-155080 |
Aug 1980 |
JPX |
60-224783 |
Nov 1985 |
JPX |
1560793 |
May 1976 |
GBX |
Non-Patent Literature Citations (1)
Entry |
Hawley, Condensed Chemical Dictionary, 9th ed., p. 945. |
Continuations (1)
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Number |
Date |
Country |
Parent |
887654 |
Jul 1986 |
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