Claims
- 1. A ZnO based compound semiconductor light emitting device comprising:a silicon substrate; a silicon nitride film formed on the surface of said silicon substrate; and a semiconductor layer lamination in which layers are laminated to form a light emitting layer, said layers having at least an n-type layer and a p-type layer which are formed on said silicon nitride film and also which are made of a ZnO based compound semiconductor.
- 2. The semiconductor light emitting device of claim 1, wherein the surface of said silicon nitride film is not made amorphous but is formed to be flat face.
- 3. The semiconductor light emitting device of claim 1, wherein said silicon nitride film is formed to a thickness of 10 nm or less.
- 4. The semiconductor light emitting device of claim 1, wherein said semiconductor layer lamination has a double-hetero construction in which an active layer made of CdxZn1−xO (0≦x<1) is sandwiched by clad layers which are made of MgyZn1−yO (0≦y<1) and also which have a band gap energy larger than that of said active layer.
- 5. A ZnO based compound semiconductor light emitting device comprising:a sapphire substrate having a main face that is perpendicular to a C-face thereof; and a semiconductor layer lamination in which layers are laminated to form a light emitting layer, said layers having at least an n-type layer and a p-type layer which are made of a ZnO based compound semiconductor grown epitaxially on said main face of said sapphire substrate.
- 6. The semiconductor light emitting device of claim 5, wherein said main face of said sapphire substrate is an A-face.
- 7. The semiconductor light emitting device of claim 5, wherein said semiconductor layer lamination has a double-hetero construction in which an active layer made of CdxZn1−xO (0≦x<1) is sandwiched by clad layers which are made of MgyZn1−yO (0≦y<±1) and also which has a band gap energy larger than that of said active layer.
Priority Claims (2)
Number |
Date |
Country |
Kind |
11/211222 |
Jul 1999 |
JP |
|
11/211223 |
Jul 1999 |
JP |
|
CROSS-REFERENCE TO RELATED APPLICATION
This application is a National Stage entry of International Application No. PCT/JP00/04998, filed Jul. 26, 2000, the entire specification claims and drawings of which are incorporated herewith by reference.
PCT Information
Filing Document |
Filing Date |
Country |
Kind |
PCT/JP00/04998 |
|
WO |
00 |
Publishing Document |
Publishing Date |
Country |
Kind |
WO01/08229 |
2/1/2001 |
WO |
A |
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Entry |
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