ACORN SEMI, LLC

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PALO ALTO, CA, US

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Patents Grantslast 30 patents

Information Patent Grant
Nanowire transistor with source and drain induced by electrical con...
- Patent number 12,034,078
- Issue date Jul 9, 2024
- ACORN SEMI, LLC
- Paul A. Clifton
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Strained semiconductor using elastic edge relaxation of a stressor...
- Patent number 11,978,800
- Issue date May 7, 2024
- ACORN SEMI, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MIS contact structure with metal oxide conductor
- Patent number 11,843,040
- Issue date Dec 12, 2023
- ACORN SEMI, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal contacts to group IV semiconductors by inserting interfacial...
- Patent number 11,804,533
- Issue date Oct 31, 2023
- ACORN SEMI, LLC
- Walter A. Harrison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Relating to SOI wafers and devices with buried stressors
- Patent number 11,791,411
- Issue date Oct 17, 2023
- ACORN SEMI, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tensile strained semiconductor photon emission and detection device...
- Patent number 11,728,624
- Issue date Aug 15, 2023
- Acorn Semi, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal contacts to group IV semiconductors by inserting interfacial...
- Patent number 11,610,974
- Issue date Mar 21, 2023
- ACORN SEMI, LLC
- Walter A. Harrison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained semiconductor using elastic edge relaxation of a stressor...
- Patent number 11,476,364
- Issue date Oct 18, 2022
- ACORN SEMI, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire transistor with source and drain induced by electrical con...
- Patent number 11,462,643
- Issue date Oct 4, 2022
- ACORN SEMI, LLC
- Paul A. Clifton
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for depinning the Fermi level of a semiconductor at an elect...
- Patent number 11,355,613
- Issue date Jun 7, 2022
- ACORN SEMI, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI wafers and devices with buried stressor
- Patent number 11,322,615
- Issue date May 3, 2022
- ACORN SEMI, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tensile strained semiconductor photon emission and detection device...
- Patent number 11,271,370
- Issue date Mar 8, 2022
- ACORN SEMI, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depinning the fermi level of a semiconductor at an elect...
- Patent number 11,056,569
- Issue date Jul 6, 2021
- ACORN SEMI, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate field effect transistor having passivated schottky b...
- Patent number 11,043,571
- Issue date Jun 22, 2021
- ACORN SEMI, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depinning the fermi level of a semiconductor at an elect...
- Patent number 11,018,237
- Issue date May 25, 2021
- ACORN SEMI, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depinning the Fermi level of a semiconductor at an elect...
- Patent number 10,950,707
- Issue date Mar 16, 2021
- ACORN SEMI, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained semiconductor using elastic edge relaxation of a stressor...
- Patent number 10,950,727
- Issue date Mar 16, 2021
- ACORN SEMI, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for depinning the Fermi level of a semiconductor at an elect...
- Patent number 10,937,880
- Issue date Mar 2, 2021
- ACORN SEMI, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal contacts to group IV semiconductors by inserting interfacial...
- Patent number 10,879,366
- Issue date Dec 29, 2020
- ACORN SEMI, LLC
- Walter A. Harrison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MIS contact structure with metal oxide conductor
- Patent number 10,872,964
- Issue date Dec 22, 2020
- ACORN SEMI, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI wafers and devices with buried stressor
- Patent number 10,833,194
- Issue date Nov 10, 2020
- ACORN SEMI, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire transistor with source and drain induced by electrical con...
- Patent number 10,833,199
- Issue date Nov 10, 2020
- ACORN SEMI, LLC
- Paul A. Clifton
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Tensile strained semiconductor photon emission and detection device...
- Patent number 10,727,647
- Issue date Jul 28, 2020
- ACORN SEMI, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained semiconductor using elastic edge relaxation of a stressor...
- Patent number 10,580,896
- Issue date Mar 3, 2020
- ACORN SEMI, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MIS contact structure with metal oxide conductor
- Patent number 10,553,695
- Issue date Feb 4, 2020
- ACORN SEMI, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire transistor with source and drain induced by electrical con...
- Patent number 10,505,047
- Issue date Dec 10, 2019
- ACORN SEMI, LLC
- Paul A. Clifton
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Metal contacts to group IV semiconductors by inserting interfacial...
- Patent number 10,505,005
- Issue date Dec 10, 2019
- ACORN SEMI, LLC
- Walter A. Harrison
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NANOWIRE TRANSISTOR WITH SOURCE AND DRAIN INDUCED BY ELECTRICAL CON...
- Publication number 20240347641
- Publication date Oct 17, 2024
- Acorn Semi, LLC
- Paul A. Clifton
- B82 - NANO-TECHNOLOGY
Information Patent Application
STRAINED SEMICONDUCTOR USING ELASTIC EDGE RELAXATION OF A STRESSOR...
- Publication number 20240250172
- Publication date Jul 25, 2024
- Acorn Semi, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIS CONTACT STRUCTURE WITH METAL OXIDE CONDUCTOR
- Publication number 20240072150
- Publication date Feb 29, 2024
- Acorn Semi, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL CONTACTS TO GROUP IV SEMICONDUCTORS BY INSERTING INTERFACIAL...
- Publication number 20240030306
- Publication date Jan 25, 2024
- Acorn Semi, LLC
- Walter A. Harrison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI WAFERS AND DEVICES WITH BURIED STRESSORS
- Publication number 20240006532
- Publication date Jan 4, 2024
- Acorn Semi, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICE...
- Publication number 20230344200
- Publication date Oct 26, 2023
- Acorn Semi, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIS CONTACT STRUCTURE WITH METAL OXIDE CONDUCTOR
- Publication number 20230317814
- Publication date Oct 5, 2023
- Acorn Semi, LLC
- Paul A. Clifton
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
METAL CONTACTS TO GROUP IV SEMICONDUCTORS BY INSERTING INTERFACIAL...
- Publication number 20230207657
- Publication date Jun 29, 2023
- Acorn Semi, LLC
- Walter A. Harrison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-FINGER RF nFET HAVING BURIED STRESSOR LAYER AND ISOLATION TRE...
- Publication number 20230093111
- Publication date Mar 23, 2023
- Acorn Semi, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED SEMICONDUCTOR USING ELASTIC EDGE RELAXATION OF A STRESSOR...
- Publication number 20230020403
- Publication date Jan 19, 2023
- Acorn Semi, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE TRANSISTOR WITH SOURCE AND DRAIN INDUCED BY ELECTRICAL CON...
- Publication number 20230006066
- Publication date Jan 5, 2023
- Acorn Semi, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RELATING TO SOI WAFERS AND DEVICES WITH BURIED STRESSORS
- Publication number 20220223735
- Publication date Jul 14, 2022
- Acorn Semi, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICE...
- Publication number 20220173575
- Publication date Jun 2, 2022
- Acorn Semi, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...
- Publication number 20210305392
- Publication date Sep 30, 2021
- Acorn Semi, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED SEMICONDUCTOR USING ELASTIC EDGE RELAXATION OF A STRESSOR...
- Publication number 20210202741
- Publication date Jul 1, 2021
- Acorn Semi, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIS CONTACT STRUCTURE WITH METAL OXIDE CONDUCTOR
- Publication number 20210126981
- Publication date Apr 29, 2021
- Acorn Semi, LLC
- Paul A. Clifton
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
METAL CONTACTS TO GROUP IV SEMICONDUCTORS BY INSERTING INTERFACIAL...
- Publication number 20210119009
- Publication date Apr 22, 2021
- Acorn Semi, LLC
- Walter A. Harrison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE TRANSISTOR WITH SOURCE AND DRAIN INDUCED BY ELECTRICAL CON...
- Publication number 20210083123
- Publication date Mar 18, 2021
- Acorn Semi, LLC
- Paul A. Clifton
- B82 - NANO-TECHNOLOGY
Information Patent Application
SOI WAFERS AND DEVICES WITH BURIED STRESSOR
- Publication number 20210050450
- Publication date Feb 18, 2021
- Acorn Semi, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICE...
- Publication number 20200335945
- Publication date Oct 22, 2020
- Acorn Semi, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...
- Publication number 20200273961
- Publication date Aug 27, 2020
- Acorn Semi, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...
- Publication number 20200273960
- Publication date Aug 27, 2020
- Acorn Semi, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...
- Publication number 20200243662
- Publication date Jul 30, 2020
- Acorn Semi, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED SEMICONDUCTOR USING ELASTIC EDGE RELAXATION OF A STRESSOR...
- Publication number 20200176602
- Publication date Jun 4, 2020
- Acorn Semi, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIS CONTACT STRUCTURE WITH METAL OXIDE CONDUCTOR
- Publication number 20200152758
- Publication date May 14, 2020
- Acorn Semi, LLC
- Paul A. Clifton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL CONTACTS TO GROUP IV SEMICONDUCTORS BY INSERTING INTERFACIAL...
- Publication number 20200111883
- Publication date Apr 9, 2020
- Acorn Semi, LLC
- Walter A. Harrison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE TRANSISTOR WITH SOURCE AND DRAIN INDUCED BY ELECTRICAL CON...
- Publication number 20200091347
- Publication date Mar 19, 2020
- Acorn Semi, LLC
- Paul A. Clifton
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...
- Publication number 20190334006
- Publication date Oct 31, 2019
- Acorn Semi, LLC
- Daniel E. Grupp
- H01 - BASIC ELECTRIC ELEMENTS

ACORN SEMI, LLC

Organization

Patents Grantslast 30 patents

Nanowire transistor with source and drain induced by electrical con...

Strained semiconductor using elastic edge relaxation of a stressor...

MIS contact structure with metal oxide conductor

Metal contacts to group IV semiconductors by inserting interfacial...

Relating to SOI wafers and devices with buried stressors

Tensile strained semiconductor photon emission and detection device...

Metal contacts to group IV semiconductors by inserting interfacial...

Strained semiconductor using elastic edge relaxation of a stressor...

Nanowire transistor with source and drain induced by electrical con...

Method for depinning the Fermi level of a semiconductor at an elect...

SOI wafers and devices with buried stressor

Tensile strained semiconductor photon emission and detection device...

Method for depinning the fermi level of a semiconductor at an elect...

Insulated gate field effect transistor having passivated schottky b...

Method for depinning the fermi level of a semiconductor at an elect...

Method for depinning the Fermi level of a semiconductor at an elect...

Strained semiconductor using elastic edge relaxation of a stressor...

Method for depinning the Fermi level of a semiconductor at an elect...

Metal contacts to group IV semiconductors by inserting interfacial...

MIS contact structure with metal oxide conductor

SOI wafers and devices with buried stressor

Nanowire transistor with source and drain induced by electrical con...

Tensile strained semiconductor photon emission and detection device...

Strained semiconductor using elastic edge relaxation of a stressor...

MIS contact structure with metal oxide conductor

Nanowire transistor with source and drain induced by electrical con...

Metal contacts to group IV semiconductors by inserting interfacial...

Patents Applicationslast 30 patents

NANOWIRE TRANSISTOR WITH SOURCE AND DRAIN INDUCED BY ELECTRICAL CON...

STRAINED SEMICONDUCTOR USING ELASTIC EDGE RELAXATION OF A STRESSOR...

MIS CONTACT STRUCTURE WITH METAL OXIDE CONDUCTOR

METAL CONTACTS TO GROUP IV SEMICONDUCTORS BY INSERTING INTERFACIAL...

SOI WAFERS AND DEVICES WITH BURIED STRESSORS

TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICE...

MIS CONTACT STRUCTURE WITH METAL OXIDE CONDUCTOR

METAL CONTACTS TO GROUP IV SEMICONDUCTORS BY INSERTING INTERFACIAL...

MULTI-FINGER RF nFET HAVING BURIED STRESSOR LAYER AND ISOLATION TRE...

STRAINED SEMICONDUCTOR USING ELASTIC EDGE RELAXATION OF A STRESSOR...

NANOWIRE TRANSISTOR WITH SOURCE AND DRAIN INDUCED BY ELECTRICAL CON...

RELATING TO SOI WAFERS AND DEVICES WITH BURIED STRESSORS

TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICE...

METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...

STRAINED SEMICONDUCTOR USING ELASTIC EDGE RELAXATION OF A STRESSOR...

MIS CONTACT STRUCTURE WITH METAL OXIDE CONDUCTOR

METAL CONTACTS TO GROUP IV SEMICONDUCTORS BY INSERTING INTERFACIAL...

NANOWIRE TRANSISTOR WITH SOURCE AND DRAIN INDUCED BY ELECTRICAL CON...

SOI WAFERS AND DEVICES WITH BURIED STRESSOR

TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICE...

METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...

METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...

METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...

STRAINED SEMICONDUCTOR USING ELASTIC EDGE RELAXATION OF A STRESSOR...

MIS CONTACT STRUCTURE WITH METAL OXIDE CONDUCTOR

METAL CONTACTS TO GROUP IV SEMICONDUCTORS BY INSERTING INTERFACIAL...

NANOWIRE TRANSISTOR WITH SOURCE AND DRAIN INDUCED BY ELECTRICAL CON...

METHOD FOR DEPINNING THE FERMI LEVEL OF A SEMICONDUCTOR AT AN ELECT...

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