AP Memory Corp, USA

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Beaverton, OR, US

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Patents Grantslast 30 patents

Information Patent Grant
Method of manufacture and/or operation of ferroelectric memory array
- Patent number 10,885,980
- Issue date Jan 5, 2021
- AP Memory Corp., USA
- Wenliang Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric memory device
- Patent number 10,622,070
- Issue date Apr 14, 2020
- AP Memory Corp, USA
- Wenliang Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric memory device
- Patent number 10,109,350
- Issue date Oct 23, 2018
- AP Memory Corp., USA
- Wenliang Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell
- Patent number 8,890,227
- Issue date Nov 18, 2014
- AP Memory Corp, USA
- Wenliang Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FERROELECTRIC MEMORY DEVICE
- Publication number 20190147951
- Publication date May 16, 2019
- AP Memory Corp, USA
- Wenliang Chen
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC MEMORY DEVICE
- Publication number 20190035465
- Publication date Jan 31, 2019
- AP Memory Corp, USA
- Wenliang Chen
- G11 - INFORMATION STORAGE

Trademarklast 30 trademarks